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We present a novel GeSi electro-absorption (EA) modulator design on a silicon-on-insulator platform. The GeSi EA modulator is constructed based on the Franz-Keldysh (FK) effect. The light is evanescent-coupled into the GeSi absorption layer from the rib Si waveguide. A contnet of 1.19% Si in SiGe absorption layer is chosen for C (1528–1560 nm) band operation. Simulation shows a high (3 dB) bandwidth of ～ 64 GHz and extinction ratio of 8.8 dB. Especially the insertion loss is as low as 2.7 dB.
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Keywords:
- GeSi /
- modulator /
- electro-optical integration
[1] Miller D 2000 Proc. IEEE 88 728
[2] Soref R 2006 IEEE J. Sel. Top. Quantum Electron. 12 1678
[3] Reed G, Mashanovich G, Gardes F, Thomson D 2010 Nature Photonics 4 518
[4] Xu Q, Schmidt B, Pradhan S, Lipson M 2005 Nature 435 325
[5] Xu Q, Manipatruni S, Schmidt B, Shakya J, Lipson M 2007 Optics Express 15 140
[6] Feng N, Liao S, Feng D, Dong P, Zheng D, Liang H, Shafiiha H, Li G, Cunningham J, Krishnamoorthy A, Asghari M 2010 Opt. Express 18 7994
[7] Liao L, Liu A, Rubin D, Basak J, Chetrit Y, Nguyen H, Cohen R, Izhaky N, Paniccia M 2007 Electronics Letters 43 (22)
[8] 陈少武, 余金中, 屠晓光 2006 物理 35 (04)
[9] 余金中, 孙飞 2005 物理 34 (01)
[10] Thomson D, Gardes F, Fedeli J, Zlatanovic S, Myslivets E, Radic S, Mashanovich G, Reed G 2012 Photonic Technology Letters 24 234
[11] Li Y, Hu W, Cheng B, Liu Z, Wang Q 2012 Chin. Phys. Lett. 29 (3)
[12] Liu J, Pan D, Jongthammanurak S, Wada K, Kimerling L, Michel J 2007 Optics Express 15 623
[13] Lim A, Liow T, Qing F, Duan N, Ding L, Yu M, Lo G, Kwong D 2011 Optics Express 19 5040
[14] Feng N, Feng D, Liao S, Wang X, Dong P, Liang H, Kung C, Qian W, Fong J, Shafiiha R, Luo Y, Cunningham J, Krishnamoorthy A, Asghari M 2011 Optics Express 19 7062
[15] Madelung O, Landolt-Börnstein 1982 Physics of Group IV Elements and III-V Compounds: Numerical Data and Functional Relationships in Science and Technology (Springer, Berlin) 17a pp449-454
[16] Levinshtein M, Rumyantsev S, Shur M 2001 Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe (Wiley, New York) Chap.6
[17] Pollak F, Cardona M 1968 Phys. Rev. 172 816
[18] Miller D A B 2012 Optics Express 20 A293
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[1] Miller D 2000 Proc. IEEE 88 728
[2] Soref R 2006 IEEE J. Sel. Top. Quantum Electron. 12 1678
[3] Reed G, Mashanovich G, Gardes F, Thomson D 2010 Nature Photonics 4 518
[4] Xu Q, Schmidt B, Pradhan S, Lipson M 2005 Nature 435 325
[5] Xu Q, Manipatruni S, Schmidt B, Shakya J, Lipson M 2007 Optics Express 15 140
[6] Feng N, Liao S, Feng D, Dong P, Zheng D, Liang H, Shafiiha H, Li G, Cunningham J, Krishnamoorthy A, Asghari M 2010 Opt. Express 18 7994
[7] Liao L, Liu A, Rubin D, Basak J, Chetrit Y, Nguyen H, Cohen R, Izhaky N, Paniccia M 2007 Electronics Letters 43 (22)
[8] 陈少武, 余金中, 屠晓光 2006 物理 35 (04)
[9] 余金中, 孙飞 2005 物理 34 (01)
[10] Thomson D, Gardes F, Fedeli J, Zlatanovic S, Myslivets E, Radic S, Mashanovich G, Reed G 2012 Photonic Technology Letters 24 234
[11] Li Y, Hu W, Cheng B, Liu Z, Wang Q 2012 Chin. Phys. Lett. 29 (3)
[12] Liu J, Pan D, Jongthammanurak S, Wada K, Kimerling L, Michel J 2007 Optics Express 15 623
[13] Lim A, Liow T, Qing F, Duan N, Ding L, Yu M, Lo G, Kwong D 2011 Optics Express 19 5040
[14] Feng N, Feng D, Liao S, Wang X, Dong P, Liang H, Kung C, Qian W, Fong J, Shafiiha R, Luo Y, Cunningham J, Krishnamoorthy A, Asghari M 2011 Optics Express 19 7062
[15] Madelung O, Landolt-Börnstein 1982 Physics of Group IV Elements and III-V Compounds: Numerical Data and Functional Relationships in Science and Technology (Springer, Berlin) 17a pp449-454
[16] Levinshtein M, Rumyantsev S, Shur M 2001 Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe (Wiley, New York) Chap.6
[17] Pollak F, Cardona M 1968 Phys. Rev. 172 816
[18] Miller D A B 2012 Optics Express 20 A293
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