Ping Yun-Xia, Wang Man-Le, Meng Xiao-Ran, Hou Chun-Lei, Yu Wen-Jie, Xue Zhong-Ying, Wei Xing, Zhang Miao, Di Zeng-Feng, Zhang Bo. Mechanism of NiSi0.7Ge0.3 epitaxial growth by Al interlayer mediation at 700 ℃J. Acta Physica Sinica, 2016, 65(3): 036801. DOI: 10.7498/aps.65.036801
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Citation:
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Ping Yun-Xia, Wang Man-Le, Meng Xiao-Ran, Hou Chun-Lei, Yu Wen-Jie, Xue Zhong-Ying, Wei Xing, Zhang Miao, Di Zeng-Feng, Zhang Bo. Mechanism of NiSi0.7Ge0.3 epitaxial growth by Al interlayer mediation at 700 ℃J. Acta Physica Sinica, 2016, 65(3): 036801. DOI: 10.7498/aps.65.036801
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Ping Yun-Xia, Wang Man-Le, Meng Xiao-Ran, Hou Chun-Lei, Yu Wen-Jie, Xue Zhong-Ying, Wei Xing, Zhang Miao, Di Zeng-Feng, Zhang Bo. Mechanism of NiSi0.7Ge0.3 epitaxial growth by Al interlayer mediation at 700 ℃J. Acta Physica Sinica, 2016, 65(3): 036801. DOI: 10.7498/aps.65.036801
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Citation:
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Ping Yun-Xia, Wang Man-Le, Meng Xiao-Ran, Hou Chun-Lei, Yu Wen-Jie, Xue Zhong-Ying, Wei Xing, Zhang Miao, Di Zeng-Feng, Zhang Bo. Mechanism of NiSi0.7Ge0.3 epitaxial growth by Al interlayer mediation at 700 ℃J. Acta Physica Sinica, 2016, 65(3): 036801. DOI: 10.7498/aps.65.036801
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