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Hexagonal YMnO3 is a special kind of multiferroics which shows unique advantages in magneto-electric field due to its low permittivity and only c-axis polarization. However, its ferroelectric properties, especially domain structures, have not been intensively investigated. In this study, YMnO3 film about 270 nm in thickness is prepared on Si(100) substrate by sol-gel spin coating. Structure and morphology of the film are characterized by grazing incidence X-ray diffraction and atomic force microscopy. Domain structure and its reversal behavior on a nanoscale are examined by piezoresponse force microscopy (PFM). The leakage current and ferroelectric property are also investigated. The results show that the film displays a hexagonal perovskite structure with good crystallinity and has smooth surface with a root-mean-square roughness of 7.209 nm. PFM images and typical local piezoresponse loops reveal the good piezoelectric and ferroelectric properties of the YMnO3 film at room temperature. Meanwhile, the offsets of amplitude loop and phase loop are observed due to the internal electric field. Leakage current density of YMnO3 film is lower than 10-6 A·cm-2, so saturated hysteresis loop can be obtained.
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Keywords:
- YMnO3 /
- ferroelectricity /
- piezoresponse force microscopy
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[1] Wang K F, Liu J M, Wang Y 2008 Chin. Sci. Bull. 53 1098(in Chinese)[王克峰, 刘俊明, 王雨 2008 科学通报 53 1098]
[2] Cheong S W, Mostovoy M 2007 Nat. Mater. 6 13
[3] Martin L W, Chu Y H, Ramesh R 2010 Mater. Sci. Eng. R 68 89
[4] Zhong C G, Jiang Q, Fang J H, Ge C W 2009 Acta Phys. Sin. 58 3491(in Chinese)[仲崇贵, 蒋青, 方靖淮, 葛存旺 2009 物理学报 58 3491]
[5] Song Y Q, Zhou W P, Fang Y, Yang Y T, Wang L Y, Wang D H, Du Y W 2014 Chin. Phys. B 23 077505
[6] Zhang Y, Deng C Y, Ma J, Lin Y H, Nan C W 2008 Chin. Phys. B 17 3910
[7] Chen Q, Zhong C G, Yuan G Q, Dong Z C, Fang J H 2013 Acta Phys. Sin. 62 127502(in Chinese)[陈强, 仲崇贵, 袁国秋, 董正超, 方靖淮 2013 物理学报 62 127502]
[8] Yoo D C, Lee J Y, Kim I S, Kim Y T 2002 J. Cryst. Growth 234 454
[9] Smolenskii G A, Bokov V A 1964 J. Appl. Phys. 35 915
[10] Van-Aken B B, M Palstra T T, Filippetti A, Spaldin N A 2004 Nat. Mater. 3 164
[11] Kim S H, Lee S H, Kim T H, Zyung T, Jeong Y H, Jang M S 2000 Cryst. Res. Technol. 35 19
[12] Fujimura N, Sakata H, Ito D, Yoshimura T, Yokota T, Ito T 2003 Appl. Phys. 93 6990
[13] Kim K T, Kim C 2004 J. Euro. Ceram. Soc. 24 2613
[14] Kim J Y, Cho K C, Koo Y M, Hong K P, Shin N 2009 Appl. Phys. Lett. 95 132901
[15] Zhou L, Wang Y P, Liu Z G, Zou W Q, Du Y W 2004 Phys. Status Solidi(a) 201 497
[16] Choi T, Horibe Y, Yi H T, Choi Y J, Wu W, Cheong S W 2010 Nat. Mater. 9 253
[17] Wu W D, Horibe Y, Lee N, Cheong S W, Guest J R 2012 Phys. Rev. Lett. 108 077203
[18] Kalinin S V, Bonnell D A 2002 Phys. Rev. B 65 125408
[19] Fan F, Luo B C, Duan M M, Xing H, Jin K X, Cheng C L 2012 Appl. Surf. Sci. 258 7412
[20] Zeng H R, Yu H F, Tang X G, Chu R Q, Li G R, Yin Q R 2005 Mater. Sci. Eng. B 120 104
[21] Jungk T, Hoffmann A, Fiebig M, Soergel E 2010 Appl. Phys. Lett. 97 012904
[22] Li J, Yang H X, Tian H F, Ma C, Zhang S, Zhao Y G, Li J Q 2012 Appl. Phys. Lett. 100 152903
[23] Zhong W L, Wang Y X, Wang C L 2001 Ferroelectrics 262 11
[24] Gruverman A, Rodriguez B J, Nemanich R J, Kingon A I 2002 J. Appl. Phys. 92 2734
[25] Yang Y C, Song C, Wang X H, Zeng F, Pan F 2008 Appl. Phys. Lett. 92 012907
[26] Parashar S, Raju A R, Rao C N R, Victor P, Krupanidhi S B 2003 J. Phys. D 36 2134
[27] Scott J F 2000 Ferroelectric Memories 3 79
[28] Wang J W, Zhang Y, Jiang P, Tang W H 2009 Acta Phys. Sin. 58 4199(in Chinese)[王君伟, 张勇, 姜平, 唐为华 2009 物理学报 58 4199]
[29] Wang X H, Deng X Y, Bai H L, Zhou H, Qu W G, Li L T, Chen I W 2006 J. Am. Ceram. Soc. 89 438
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