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The monoclinic phase (M phase) VO2 film is prepared on quartz glass substrate by a model MSP-3200 three-target co-sputter coater with RF magnetron reactive sputtering. The optical properties in incident energy ranges of 0.5-3.5 eV (350-2500 nm) and 0.083-0.87 eV (1400-15000 nm) of VO2 film are investigated by spectroscopic ellipsometry with variable temperature attachment. The good results are determined point by point with the three Lorentz harmonic oscillator dispersion models in the range of 0.5-3.5 eV and four Gaussion harmonic oscillator dispersion models in the range of 0.083-0.87 eV in the state of semiconductor below the transition temperature, while adding seven Lorentz harmonic oscillator dispersion models in the high temperature metallic state film results in the characteristic absorption peaks. The results show that the refractive index of the semiconductor state of VO2 film is maintained at maximum 3.27 and extinction coefficient k is close to zero in the near infrared-mid infrared, which is due to the fact that the absorption of semiconductor thin film in the VIS-NIR range is derived from the free carrier absorption and d// orbital of the semiconductor film has less electron density. The refractive index n of high temperature metallic state VO2 film has an obviously increasing trend in the near infrared-the mid infrared which is larger than the refractive index of the semiconductor state when the incident light energy is 0.45 eV. Extinction coefficient k increases rapidly in the near infrared, which is because the density of free carrier increases in the range of 0.5-1.62 eV and electron transition absorption augments within the V3d band. When the incident energy less than 0.5 eV, k value changes gently in the film because free carrier concentration and flow rates are stable.
[1] Gao Y F, Luo H J, Zhang Z T 2012 Nano Energy 1 221
[2] Bugayev A A, Gupta M C 2003 Opt. Lett. 28 1463
[3] Sen Y L, Wei T S 2008 Surf. Coat. Tech. 202 5641
[4] Erominek H, Vincent D, Picard F 1993 Opt. Eng. 32 2092
[5] Shen T F R, Lai M H, Yang T C K 2012 J. Taiwan Inst. Chem. Eng. 43 95
[6] Dvorak O, Diers J 1992 Chem. Mater. 4 1074
[7] Zilberberg K, Trost S, Meyer J 2011 Adv. Funct. Mater. 21 4776
[8] Zhao Y, Chen C H, Pan X, Zhu Y H, Holtz M, Bernussi A, Fan Z Y 2013 J. Appl. Phys. 114 113509
[9] Soltani M, Chaker M, Haddad E, Kruzelesky R 2006 Meas. Sci. Technol. 17 1052
[10] Verleur H W, Barker A S, Berglund C N 1968 Phys. Rev. 172 788
[11] Okazaki K, Sugai S, Muraoka Y, Hiroi Z 2006 Phys. Rev. B 73 165116
[12] Kakiuchida H, Jin P, Nakao S, Tazawa M 2007 Jpn. J. Appl. Phys. 46 L113
[13] Paone A, Sanjines R, Jeanneret P, Schler As 2015 Sol. Energy 118 107
[14] Chen L Y, Qian Y H 1995 Physics 24 75 (in Chinese) [陈良尧，钱佑华 1995 物理 24 75]
[15] Liao N M, Li W, Jiang Y D 2008 Acta Phys. Sin. 57 1542 (in Chinese) [廖乃镘, 李伟, 蒋亚东 2008 物理学报 57 1542]
[16] Wang X D, Shen J, Wang S Z 2009 Acta Phys. Sin. 58 8027 (in Chinese) [王晓栋, 沈军, 王生钊 2009 物理学报 58 8027]
[17] Wang X, Cao Y Z, Zhang Y Z, Yan L, Li Y 2015 Appl. Surf. Sci. 344 230
[18] Zheng Y X, Chen L Y 2011 Modern Optics (Beijing: Electronic Industry Press) (in Chinese) [郑玉祥, 陈良尧 2011 近代光学 (北京: 电子工业出版社)]
[19] Li W 2013 M. S. Dissertation (Shanghai: Fudan University) (in Chinese) [李崴 2013 硕士论文(上海: 复旦大学)]
[20] Goodenough J B 1960 Phys. Rev. 117 1442
[21] Goodenough J B 1971 J. Solid State Chem. 3 490
[22] Goodenough J B 1971 Metallic Oxides, in: Progress in Solid State Chemistry (edited by Reiss H) (Oxford: Pergam on Press) pp145-399
[23] Shin S, Suga S, Taniguchi M, Fujisawa M, Kanzaki H, Fujimori A, Daimon H, Ueda Y, Kosuge K, Kachi S 1990 Phys. Rev. B 41 4993
[24] Shen X C 2002 Spectroscopy and Optical Properties of Semiconductor (Beijing: Science Press) (in Chinese) [沈学础 2002 半导体光谱和光学性质 (北京：科学出版社)第20页]
[25] Volker E 2002 Ann. Phys. (Leipzig) 11 9
[26] Blaauw C, Leenhouts F, Woude van der F, Sawatzky G A 1975 J. Phys. C: Solid State Phys. 8 459
[27] Bermudez V M, Williams R T, Long J P, Reed R K, Klein P H 1992 Phys. Rev. B 45 9266
[28] Goering E 1996 Ph. D. Dissertation (Augsburg: University of Augsburg)
[29] Goering E, Schramme M, Muller O, Paulin H, Lemm M K, denBoer M L, Horn S 1997 Physica B 230 996
[30] Goering E, Schramme M, Muller O, Barth R, Paulin H, Klemm M, denBoer M L, Horn S 1997 Phys. Rev. B 55 4225
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[1] Gao Y F, Luo H J, Zhang Z T 2012 Nano Energy 1 221
[2] Bugayev A A, Gupta M C 2003 Opt. Lett. 28 1463
[3] Sen Y L, Wei T S 2008 Surf. Coat. Tech. 202 5641
[4] Erominek H, Vincent D, Picard F 1993 Opt. Eng. 32 2092
[5] Shen T F R, Lai M H, Yang T C K 2012 J. Taiwan Inst. Chem. Eng. 43 95
[6] Dvorak O, Diers J 1992 Chem. Mater. 4 1074
[7] Zilberberg K, Trost S, Meyer J 2011 Adv. Funct. Mater. 21 4776
[8] Zhao Y, Chen C H, Pan X, Zhu Y H, Holtz M, Bernussi A, Fan Z Y 2013 J. Appl. Phys. 114 113509
[9] Soltani M, Chaker M, Haddad E, Kruzelesky R 2006 Meas. Sci. Technol. 17 1052
[10] Verleur H W, Barker A S, Berglund C N 1968 Phys. Rev. 172 788
[11] Okazaki K, Sugai S, Muraoka Y, Hiroi Z 2006 Phys. Rev. B 73 165116
[12] Kakiuchida H, Jin P, Nakao S, Tazawa M 2007 Jpn. J. Appl. Phys. 46 L113
[13] Paone A, Sanjines R, Jeanneret P, Schler As 2015 Sol. Energy 118 107
[14] Chen L Y, Qian Y H 1995 Physics 24 75 (in Chinese) [陈良尧，钱佑华 1995 物理 24 75]
[15] Liao N M, Li W, Jiang Y D 2008 Acta Phys. Sin. 57 1542 (in Chinese) [廖乃镘, 李伟, 蒋亚东 2008 物理学报 57 1542]
[16] Wang X D, Shen J, Wang S Z 2009 Acta Phys. Sin. 58 8027 (in Chinese) [王晓栋, 沈军, 王生钊 2009 物理学报 58 8027]
[17] Wang X, Cao Y Z, Zhang Y Z, Yan L, Li Y 2015 Appl. Surf. Sci. 344 230
[18] Zheng Y X, Chen L Y 2011 Modern Optics (Beijing: Electronic Industry Press) (in Chinese) [郑玉祥, 陈良尧 2011 近代光学 (北京: 电子工业出版社)]
[19] Li W 2013 M. S. Dissertation (Shanghai: Fudan University) (in Chinese) [李崴 2013 硕士论文(上海: 复旦大学)]
[20] Goodenough J B 1960 Phys. Rev. 117 1442
[21] Goodenough J B 1971 J. Solid State Chem. 3 490
[22] Goodenough J B 1971 Metallic Oxides, in: Progress in Solid State Chemistry (edited by Reiss H) (Oxford: Pergam on Press) pp145-399
[23] Shin S, Suga S, Taniguchi M, Fujisawa M, Kanzaki H, Fujimori A, Daimon H, Ueda Y, Kosuge K, Kachi S 1990 Phys. Rev. B 41 4993
[24] Shen X C 2002 Spectroscopy and Optical Properties of Semiconductor (Beijing: Science Press) (in Chinese) [沈学础 2002 半导体光谱和光学性质 (北京：科学出版社)第20页]
[25] Volker E 2002 Ann. Phys. (Leipzig) 11 9
[26] Blaauw C, Leenhouts F, Woude van der F, Sawatzky G A 1975 J. Phys. C: Solid State Phys. 8 459
[27] Bermudez V M, Williams R T, Long J P, Reed R K, Klein P H 1992 Phys. Rev. B 45 9266
[28] Goering E 1996 Ph. D. Dissertation (Augsburg: University of Augsburg)
[29] Goering E, Schramme M, Muller O, Paulin H, Lemm M K, denBoer M L, Horn S 1997 Physica B 230 996
[30] Goering E, Schramme M, Muller O, Barth R, Paulin H, Klemm M, denBoer M L, Horn S 1997 Phys. Rev. B 55 4225
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