Abnormal variation of optical properties of vanadium oxide thin film at semiconductor-metal transition

Yang Wei; Liang Ji-Ran; Liu Jian; Ji Yang

doi:10.7498/aps.63.107104

Abstract

The optical properties of vanadium oxide thin film are measured at semiconductor-metal transition, including reflectance and transmittance results at different wavelengths which show different trends during the phase transition. With a multi-level reflection-transmission model of incoherent light, we calculate the values of refractive index n and extinction coefficient k at different wavelengths, and show that the abnormal optical properties result not only from the dependences of n and k on the wavelength, but also from multiple reflections in the absorbing film.

Keywords:

vanadium oxide thin film /
semiconductor-metal transition /
multi-level reflection-transmission model

Authors and contacts

1.
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2.
School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China
Funds: Project supported by the State Key Development Program for Basic Research of China (Grant No. 2013CB922304), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61101055), and the Foundation of Key Laboratory of Polar Materials and Devices of Ministry of Education, China (Grant No. KFKT20130002).

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[5]	He Q, Xu X D, Wen Y J, Jiang Y D, Ao T H, Fan T J, Huang L, Ma C Q, Sun Z Q 2013 Acta Phys. Sin. 62 056802 (in Chinese)[何琼, 许向东, 温粤江, 蒋亚东, 敖天宏, 樊泰君, 黄龙, 马春前, 孙自强 2013 物理学报 62 056802]
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[9]	Sun D D, Chen Z, Wen Q Y, Qiu D H, Lai W E, Dong K, Zhao B H, Zhang H W 2013 Acta Phys. Sin. 62 017202 (in Chinese)[孙丹丹, 陈智, 文岐业, 邱东鸿, 赖伟恩, 董凯, 赵碧辉, 张怀武 2013 物理学报 62 017202]
[10]	Wen X Z, Chen X, Wu N J, Ignatiev A 2011 Chin. Phys. B 20 097703
[11]	Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W, Chen D M 2010 Chin. Phys. B 19 037304
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[14]	Li W W, Yu Q, Liang J R, Jiang K, Hu Z G, Liu J, Chen H D, Chu J H 2011 Appl. Phys. Lett. 99 241903
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[17]	Wang H F, Li Y, Yu X J, Zhu H Q, Huang Y Z, Zhang H, Zhang W, Zhou S 2010 Acta Opt. Sin. 30 152205 (in Chinese) [王海方, 李毅, 俞晓静, 朱慧群, 黄毅泽, 张虎, 张伟, 周晟 2010 光学学报 30 152205]
[18]	Kats M A, Sharma D, Lin J, Genevet P, Blanchard R, Yang Z, Qazilbash M M, Basov D N, Ramanathan S, Capasso F 2012 Appl. Phys. Lett. 101 221101
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Cited By

[1]	Morin F J 1959 Phys. Rev. Lett. 3 34
[2]	Song T T, He J, Lin L B, Chen J 2010 Acta Phys. Sin. 59 6480 (in Chinese)[宋婷婷, 何捷, 林理彬, 陈军 2010 物理学报 59 6480]
[3]	Lysenko S, Rua A J, Vikhnin V 2006 Appl. Surf. Sci. 252 5512
[4]	Chen T 2011 Ph. D. Dissertation (Tianjin: Tianjin University) (in Chinese) [陈涛 2011 博士学位论文 (天津: 天津大学)]
[5]	He Q, Xu X D, Wen Y J, Jiang Y D, Ao T H, Fan T J, Huang L, Ma C Q, Sun Z Q 2013 Acta Phys. Sin. 62 056802 (in Chinese)[何琼, 许向东, 温粤江, 蒋亚东, 敖天宏, 樊泰君, 黄龙, 马春前, 孙自强 2013 物理学报 62 056802]
[6]	Fang Z, Yu H Y, Chroboczek J A, Ghibaudo G, Buckley J, Salvo B D, Li X, Kwong D L 2012 IEEE Electr. Device Lett. 59 850
[7]	Clima S, Chen Y Y, Degraeve R, Mees M, Sankaran K, Govoreanu B, Jurczak M, Gendt S D, Pourtois G 2012 Appl. Phys. Lett. 100 133102
[8]	Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese)[邱东鸿, 文岐业, 杨青慧, 陈智, 荆玉兰, 张怀武 2013 物理学报 62 217201]
[9]	Sun D D, Chen Z, Wen Q Y, Qiu D H, Lai W E, Dong K, Zhao B H, Zhang H W 2013 Acta Phys. Sin. 62 017202 (in Chinese)[孙丹丹, 陈智, 文岐业, 邱东鸿, 赖伟恩, 董凯, 赵碧辉, 张怀武 2013 物理学报 62 017202]
[10]	Wen X Z, Chen X, Wu N J, Ignatiev A 2011 Chin. Phys. B 20 097703
[11]	Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W, Chen D M 2010 Chin. Phys. B 19 037304
[12]	Tao Z S, Han T T, Mahanti S D, Duxbury P M, Yuan F, Ruan C Y, Wang K, Wu J Q 2012 Phys. Rev. Lett. 109 166406
[13]	Liang J R, Hu M, Wang X D, Kan Q, Li G K, Chen H D 2010 J. Infrared Millim. Waves 29 457 (in Chinese) [梁继然, 胡明, 王晓东, 阚强, 李贵柯, 陈宏达 2010 红外与毫米波学报 29 457]
[14]	Li W W, Yu Q, Liang J R, Jiang K, Hu Z G, Liu J, Chen H D, Chu J H 2011 Appl. Phys. Lett. 99 241903
[15]	Lee K W, Kweon J J, Lee C E, Gedanken A, Ganesan R 2010 Appl. Phys. Lett. 96 243111
[16]	Lopez R, Feldman L C, Haglund R F 2004 Phys. Rev. Lett. 93 177403
[17]	Wang H F, Li Y, Yu X J, Zhu H Q, Huang Y Z, Zhang H, Zhang W, Zhou S 2010 Acta Opt. Sin. 30 152205 (in Chinese) [王海方, 李毅, 俞晓静, 朱慧群, 黄毅泽, 张虎, 张伟, 周晟 2010 光学学报 30 152205]
[18]	Kats M A, Sharma D, Lin J, Genevet P, Blanchard R, Yang Z, Qazilbash M M, Basov D N, Ramanathan S, Capasso F 2012 Appl. Phys. Lett. 101 221101
[19]	Kats M A, Blanchard R, Genevet P, Capasso F 2012 Nat. Mater. 12 20
[20]	Born M, Wolf E (translated by Yang J S) 2005 Principles of Optics (Vol. 1) (7th ed) (Beijing: Publishing House of Electronics Industry) pp55, 56 (in Chinese) [玻恩 M, 沃耳夫 E著 (杨葭荪译) 2005 光学原理 (上) (第七版) (北京:电子工业出版社) 第55, 56页]
[21]	Coath J A, Richardson M A 1999 Conference on Advances in Optical Interference Coatings (Washington: SPIE) p555

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Vol. 63, Issue 10 - 2014-05-20

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