Design and application of gas cluster accelerator for surface smoothing and nanostructures formation

Zeng Xiao-Mei; Vasiliy Pelenovich; Rakhim Rakhimov; Zuo Wen-Bin; Xing Bin; Luo Jin-Bao; Zhang Xiang-Yu; Fu De-Jun

doi:10.7498/aps.69.20191990

Abstract

A custom-built gas cluster ion source with energy up to 50 keV is constructed, and Ar, CO₂, N₂, and O₂ are used as the working gases. The clusters are formed by a metal supersonic conical nozzle with critical diameter in a range of 65–135 μm and a cone angle of 14°. The nozzle is powered in the pulsed mode, which improves the pumping conditions, and also makes it possible to increase the gas pressure in the stagnation zone to 15 atm and thereby obtain larger clusters. Based on the principle of ultrasonic expansion, gas cluster ions with an average size of 3000 atoms are obtained. The cluster beam current of 50 μA is obtained. The Ar cluster beam, which is less reactive, is used for treating surface, namely, surface smoothing and formation of self-assembled nanostructures. The Ar cluster bombardment perpendicular to the surface of the substrate is used to demonstrate the smoothing of the surface of Si wafers, Ti coating, and Au film. For the initial Si wafer, its root-mean-square (RMS) roughness of 1.92 nm decreases down to 0.5 nm after cluster beam treatment. The cleaning effect of the cluster beam is also observed very well. The one-dimensional (1D) isotropic power spectral density of the Si surface topography before and after smoothing are also discussed. The off-normal irradiation Ar cluster beam is also used to form self-assembled surface nanoripple arrays on the surface of flat ZnO single crystal substrates. The ripple formation is observed when the incident angle of the cluster beam is in a range of 30°–60°. The process of nanoripple fabrication is significantly governed by the cluster beam incident angle, energy and dose. The nano-ripples formed on the flat substrates remain eolian sand ripples and their formation starts at the incident angle of 30°. The most developed nanoripples are observed at the incident angle within a range of 45°–60°. The surface morphology and characteristic distribution of the nano-structures on the flat ZnO substrate are also analyzed by the two-dimensional (2D) power spectral density function. Next, Ar cluster beam is used for irradiating the ZnO nanorod arrays grown on the Si substrate. Due to various angles between the nanorod’s axis and the substrate normal, the conditions of the ripple formation on the nanorod facets are also realized. The dependence of wavelength on the accelerating voltage of the cluster ions and the dose are studied. Similar dependence of wavelength on accelerating voltage and dose are found for nanorods. Comparing with the flat ZnO surface, nanoripples on the ZnO nanorod faces at high irradiation doses demonstrate an ordering effect, and morphology of the ripples resembles that of more parallel steps rather than eolian ripples.

Keywords:

Authors and contacts

1.
School of Physical Science and Technology, Wuhan University, Wuhan 430072, China
2.
School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China

Corresponding author: Zeng Xiao-Mei, 1714399588@qq.com ; Vasiliy Pelenovich, pelenovich@mail.ru ; Fu De-Jun, djfu@whu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11875210)and the Science and Technology Planning Project of Guangdong Province, China(Grant No. 2018A050506082)

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References

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[5]	Yamada I, Matsuo J, Insepov Z, Takeuchi D, Akizuki M, Toyoda N 1996 J. Vac. Sci. Technol., A 14 781 Google Scholar
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[35]	Sumie K, Toyoda N, Yamada I 2013 Nucl. Instrum. Methods B 307 290 Google Scholar
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[38]	Tilakaratne B P, Chen Q Y, Chu W K 2017 Materials 10 1056 Google Scholar
[39]	Pelenovich V, Zeng X M, Rakhimov R, Zuo W B, Tian C X, Fu D J, Yang B 2020 Mater. Lett. 264 127356 Google Scholar

Cited By

图 1 GCIB装置实物图

Figure 1. Image of the GCIB accelerator.

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图 2 气体团簇离子加速器工作原理结构图

Figure 2. Working principle and structure diagram of gas cluster ion accelerator.

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图 3 单晶硅片AFM表面形貌图　(a) 清洁前; (b) 化学法清洗后; (c) 团簇清洁后

Figure 3. AFM surface topography of single crystal silicon wafer: (a) Before cleaning; (b) after chemical cleaning; (c) after cluster cleaning.

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图 4 单晶硅片清洁前后AFM图像对应的一维PSD曲线

Figure 4. One dimensional PSD curves of AFM images of single crystal silicon wafer.

DownLoad: Full-Size Img PowerPoint

图 5 在不同入射角下Ar GCIB辐照前后单晶ZnO基片的AFM图像(能量, 10 keV; 剂量, 4 × 10¹⁶ ions/cm²; 箭头表示离子束轰击方向)　(a) 团簇辐照前; (b) 30°; (c) 45°; (d) 60°

Figure 5. AFM images of single crystal ZnO substrates before and after Ar GCIB irradiation at different incident angles (energy, 10 keV; dose, 4 × 10¹⁶ ions/cm²; arrows indicate the direction of ion beam bombardment): (a) Before cluster irradiation; (b) 30°; (c) 45°; (d) 60°

DownLoad: Full-Size Img PowerPoint

图 6 在不同入射角下Ar GCIB辐照单晶ZnO基片的二维PSD图像(能量, 10 keV; 剂量, 4 × 10¹⁶ ions/cm²; 箭头表示离子束轰击方向)　(a) 团簇辐照前; (b) 30°; (c) 45°; (d) 60°

Figure 6. Two-dimensional PSD images of single crystal ZnO substrates before and after Ar GCIB irradiation at different incident angles (energy, 10 keV; dose, 4 × 10¹⁶ ions/cm²; arrows indicate the direction of ion beam bombardment): (a) Before cluster irradiation; (b) 30°; (c) 45°; (d) 60°.

DownLoad: Full-Size Img PowerPoint

图 7 经不同团簇能量、剂量改性前后ZnO纳米棒的SEM图像　(a) 团簇辐照前; (b) 5 keV, 4 × 10¹⁶ ions/cm²; (c) 10 keV, 2 × 10¹⁶ ions/cm²; (d) 10 keV, 4 × 10¹⁶ ions/cm²

Figure 7. SEM images of ZnO nanorods before and after Ar GCIB irradiation at different cluster energy and dose: (a) Before cluster irradiation; (b) 5 keV, 4 × 10¹⁶ ions/cm²; (c) 10 keV, 2 × 10¹⁶ ions/cm²; (d) 10 keV, 4 × 10¹⁶ ions/cm².

DownLoad: Full-Size Img PowerPoint

表 1 根据二维PSD计算的纳米波纹波长和数量

Table 1. Wavelength and number of nanowaves calculated from two-dimensional PSD.

入射角
30° 45° 60°
y 轴 y 轴 x 轴 y 轴

最强频率/μm^–1 2 6 2 4
波纹波长λ/μm 0.5 0.167 0.5 0.25
平均波纹数量N 10 30 10 20

DownLoad: CSV

[1]	Yamada I, Matsuo J, Toyoda N, Kirkpatrick A 2001 Mater. Sci. Eng., R 34 231 Google Scholar
[2]	郭尔夫, 韩纪锋, 李永青, 杨朝文, 周荣 2014 物理学报 63 103601 Google Scholar Guo E F, Han J F, Li Y Q, Yang C W, Zhou R 2014 Acta Phys. Sin. 63 103601 Google Scholar
[3]	Becker E W, Bier K, Henkes W 1956 Z. Phys. 146 333 Google Scholar
[4]	Matsuo J, Abe H, Takaoka G H, Yamada I 1995 Nucl. Instrum. Meth. B 99 244 Google Scholar
[5]	Yamada I, Matsuo J, Insepov Z, Takeuchi D, Akizuki M, Toyoda N 1996 J. Vac. Sci. Technol., A 14 781 Google Scholar
[6]	Yamada I, Matsuo J 1998 Mater. Sci. Semicond. Process. 1 27 Google Scholar
[7]	Song J H, Kwon S N, Choi D K, Choi W K 2001 Nucl. Instrum. Meth. B 179 568 Google Scholar
[8]	Andreev A A, Chernysh V S, Ermakov Yu A, Ieshkin A E 2013 Vacuum 91 47 Google Scholar
[9]	Kirkpatrick A, Greer J 1999 AIP Conf. Proc. 475 405
[10]	Qin W, Howson R P, Akizuki M, Matsuo J, Takaoka G, Yamada I 1998 Mater. Chem. Phys. 54 258 Google Scholar
[11]	Nose T, Inoue S, Toyoda N, Mochiji K, Mitamura T, Yamada I 2005 Nucl. Instrum. Meth. B 241 626 Google Scholar
[12]	Greer J A, Fenner D B, Hautala J, Allen L P, DiFilippo V, Toyoda N, Yamada I, Matsuo J, Minami E, Katsumata H 2000 Surf. Coat. Technol. 133 273 Google Scholar
[13]	Toyoda N, Yamada I 2008 Nucl. Instrum. Methods B 266 2529 Google Scholar
[14]	Lozano O, Chen Q Y, Tilakaratne B P, Seo H W, Wang X M, Wadekar P V, Chinta P V, Tu LW, Ho N J, Wijesundera D, Chu W K 2013 AIP Adv. 3 062107 Google Scholar
[15]	Saleem I, Tilakaratne B P, Li Y, Bao J, Wijesundera D N, Chu W K 2016 Nucl. Instrum. Methods B 380 20 Google Scholar
[16]	Bradley R M, Harper J M E 1988 J. Vac. Sci. Technol., A 6 2390 Google Scholar
[17]	Motta F C, Shipman P D, Bradley R M 2012 J. Phys. D: Appl. Phys. 45 122001 Google Scholar
[18]	Chao L C, Li Y K, Chang W C 2011 Mater. Lett. 65 1615 Google Scholar
[19]	Babonneau D, Camelio S, Simonot L, Pailloux F, Guerin P, Lamongie B, Lyon O 2011 EPL 93 26005 Google Scholar
[20]	Gkogkou D, Schreiber B, Shaykhutdinov T, Ly H K, Kuhlmann U, Gernert U, Facsko S, Hildebrandt P, Esser N, Hinrichs K, Weidinger I M, Oates T W H 2016 ACS Sens. 1 318 Google Scholar
[21]	Arranz M A, Colino J M, Palomares F J 2014 J. Appl. Phys. 115 183906 Google Scholar
[22]	Zhang K, Uhrmacher M, Hofsäss H, Krauser J 2008 J. Appl. Phys. 103 083507 Google Scholar
[23]	Zeng X M, Pelenovich V, Liu C S, Fu D J 2017 Chin. Phys. C 41 087003 Google Scholar
[24]	Zeng X M, Pelenovich V, Wang Z S, Zuo W B, Belykh S, Tolstogouzov A, Fu D J, Xiao X H 2019 Beilstein J. Nanotechnol. 10 135 Google Scholar
[25]	瓦西里·帕里诺维奇, 曾晓梅, 付德君 2017 ZL 2017 1 0664910.3 Pelenovich V, Zeng X M, Fu D J 2017 ZL2017 1 0664910.3 (in Chinese)
[26]	Pelenovich V, Zeng X M, Ieshkin A, Zuo W B, Chernysh V S, Tolstogouzov A B, Yang B, Fu D J 2019 Nucl. Instrum. Methods B 450 131 Google Scholar
[27]	Pelenovich V O, Zeng X M, Ieshkin A E, Chernysh V S, Tolstogouzov A B, Yang B, Fu D J 2019 J. Surf. Invest. 13 344 Google Scholar
[28]	Korobeishchikov N G, Nikolaev I V, Roenko M A 2019 Nucl. Instrum. Methods B 438 1 Google Scholar
[29]	Ieshkin A, Kireev D, Chernysh V, Molchanov A, Serebryakov A, Chirkin M 2019 Surf. Topogr. Metrol. Prop. 7 025016 Google Scholar
[30]	Insepov Z, Yamada I 1999 Nucl. Instrum. Methods B 148 121 Google Scholar
[31]	Toyoda N, Hagiwara N, Matsuo J, Yamada I 2000 Nucl. Instrum. Methods B 161 980 Google Scholar
[32]	Wang L, Kang Y, Liu X, Zhang S, Huang W, Wang S 2012 Sens. Actuators, B 162 237 Google Scholar
[33]	Shinde S D, Patil G E, Kajale D D, Gaikwad V B, Jain G H 2012 J. Alloys Compd. 528 109 Google Scholar
[34]	Inoue S, Toyoda N, Tsubakino H, Yamada I 2005 Nucl. Instrum. Methods B 237 449 Google Scholar
[35]	Sumie K, Toyoda N, Yamada I 2013 Nucl. Instrum. Methods B 307 290 Google Scholar
[36]	Insepov Z, Yamada I 1999 Nucl. Instrum. Methods B 153 199 Google Scholar
[37]	Moseler M, Rattunde O, Nordiek J, Haberland H 2000 Nucl. Instrum. Methods B 164 522 Google Scholar
[38]	Tilakaratne B P, Chen Q Y, Chu W K 2017 Materials 10 1056 Google Scholar
[39]	Pelenovich V, Zeng X M, Rakhimov R, Zuo W B, Tian C X, Fu D J, Yang B 2020 Mater. Lett. 264 127356 Google Scholar

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