Growth of 4H-SiC recombination-enhancing buffer layer with Ti and N co-doping and improvement of forward voltage stability of PiN diodes

Li Chuan-Gang; Ju Tao; Zhang Li-Guo; Li Yang; Zhang Xuan; Qin Juan; Zhang Bao-Shun; Zhang Ze-Hong

doi:10.7498/aps.70.20200921

Abstract

“Bipolar degradation” phenomenon has severely impeded the development of 4H-SiC bipolar devices. Their defect mechanism is the expansion of Shockley-type stacking faults from basal plane dislocations under the condition of electron-hole recombination. To suppress the “bipolar degradation” phenomenon, not only do the basal plane dislocations in the 4H-SiC drift layer need eliminating, but also a recombination-enhancing buffer layer is required to prevent the minority carriers of holes from reaching the epilayer/substrate interface where high-density basal plane dislocation segments exist. In this paper, Ti and N co-doped 4H-SiC buffer layers are grown to further shorten the minority carrier lifetime. Firstly, the dependence of Ti doping concentration on TiCl₄ flow rate in 4H-SiC epilayers is determined by using single-dilution gas line and double-dilution gas line. Then the p⁺ layer and p⁺⁺ layer in PiN diode are obtained by aluminum ion implantation at room temperature and 500 ℃ followed by high temperature activation annealing. Finally, 4H-SiC PiN diodes with a Ti, N co-doped buffer layer are fabricated and tested with a forward current density of 100 A/cm² for 10 min. Comparing with the PiN diodes without a buffer layer and with a buffer layer only doped with high concentration of nitrogen, the forward voltage drop stability of those diodes with a 2 μm-thick Ti, N co-doped buffer layer (Ti: 3.70 × 10¹⁵ cm^–3 and N: 1.01 × 10¹⁹ cm^–3) is greatly improved.

Keywords:

Authors and contacts

1.
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
2.
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Corresponding author: Qin Juan, juan_qin@staff.shu.edu.cn ; Zhang Bao-Shun, bszhang2006@sinano.ac.cn ;

Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61804166)

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References

[1]	Lendenmann H, Dahlquist F, Johansson N, Soderholm R, Nilsson P A, Bergman J P, Skytt P 2001 Mater. Sci. Forum. 353–356 727 Google Scholar
[2]	Skowronski M, Liu J Q, Vetter W M, Dudley M, Hallin C, Lendenmann H 2002 J. Appl. Phys. 92 4699 Google Scholar
[3]	Caldwell J D, Stahlbush R E, Ancona M G, Glembocki O J, Hobart K D 2010 J. Appl. Phys. 108 044503 Google Scholar
[4]	Maeda K, Hirano R, Sato Y, Tajima M 2012 Mater. Sci. Forum. 725 35 Google Scholar
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[12]	Tawara T, Miyazawa T, Ryo M, Miyazato M, Fujimoto T, Takenaka K, Matsunaga S, Miyajima M, Otsuki A, Yonezawa Y, Kato T, Okumura H, Kimoto T, Tsuchida H 2016 J. Appl. Phys. 120 115101 Google Scholar
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[15]	Murata K, Tawara T, Yang A, Takanashi R, Miyazawa T, Tsuchida H 2019 J. Appl. Phys. 126 045711 Google Scholar
[16]	Tawara T, Miyazawa T, Ryo M, Miyazato M, Fujimoto T, Takenaka K, Matsunaga S, Miyajima M, Otsuki A, Yonezawa Y, Kato T, Okumura H, Kimoto T, Tsuchida H 2017 Mater. Sci. Forum. 897 419 Google Scholar
[17]	Dalibor T, Pensl G, Matsunami H, Kimoto T, Choyke W J, Schoner A, Nordell N 1997 Phys. Status Solidi A 162 199 Google Scholar
[18]	Hobgood H M, Glass R C, Augustine G, Hopkins R H, Jenny J, Skowronski M, Mitchel W C, Roth M 1995 Appl. Phys. Lett. 66 1364 Google Scholar
[19]	Dalibor T, Pensl G, Nordell N, Schoner A 1997 Phys. Rev. B 55 13618 Google Scholar
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图 1 (a) 4H-SiC CVD外延设备示意图; Ti掺杂(b)单稀释和(c)双稀释管路示意图

Figure 1. Schematics of (a) the CVD reactor for 4H-SiC epitaxial growth, (b) single-dilution pipe and (c) double-dilution pipe of TiCl₄ gas delivery.

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图 2 (a) 含Ti, N共掺杂缓冲层结构的SiC PiN二极管结构示意图; (b) TRIM模拟的Al注入浓度箱型分布

Figure 2. (a) Schematic of the cross-sectional structure of a 4H-SiC PiN diode with Ti and N co-doped buffer layer; (b) box-profile of Al concentration by TRIM simulation.

DownLoad: Full-Size Img PowerPoint

图 3 Ti掺杂浓度随TiCl₄摩尔流量的变化

Figure 3. Relationship between Ti doping concentration and TiCl₄ mole flow rate.

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图 4 Ti, N共掺杂4H-SiC缓冲层表面形貌(N_d = 1.01 × 10¹⁹ cm^–3)　(a) Ti掺杂浓度为3.70 × 10¹⁵ cm^–3; (b) Ti掺杂浓度为3.71 × 10¹⁶ cm^–3

Figure 4. Optical microscope images of the Ti and N co-doped 4H-SiC buffer layer surface with Ti doping concentrations of (a) 3.70 × 10¹⁵ cm^–3 and (b) 3.71 × 10¹⁶ cm^–3. Both with N_d = 1.01 × 10¹⁹ cm^–3.

DownLoad: Full-Size Img PowerPoint

图 5 无缓冲层、仅含高浓度N掺杂缓冲层、含Ti和N共掺杂缓冲层的4H-SiC PiN二极管的正向特性　(a), (c), (e)在100 A/cm²电流密度下10 min, 正向压降随时间的变化; (b), (d), (f)正向偏置前后正向电流-电压曲线的对比

Figure 5. (a), (c), (e) Change of forward voltage drop vs. time and (b), (d), (f) comparison between the forward I-V characteristics before and after being biased for 10 min at a current density of 100 A/cm² for 4H-SiC PiN diodes without a buffer layer, with a highly N-doped buffer layer, and with a Ti and N co-doped buffer layer.

DownLoad: Full-Size Img PowerPoint

表 1 Ti掺杂实验参数

Table 1. Experimental parameters of Ti doping.

稀释管路	MFC1	MFC2	MFC3	TiCl₄掺杂摩尔流量
稀释管路	/sccm	/slm	/sccm	/(mol·min^–1)
单稀释	1.25	9.800	—	7.25 × 10^–7
	5	9.800	—	2.90 × 10^–6
	50	9.800	—	2.90 × 10^–5
双稀释	50	0.100	5	8.95 × 10^–7
	50	0.075	5	1.14 × 10^–6
	50	0.040	5	1.62 × 10^–6

DownLoad: CSV

[1]	Lendenmann H, Dahlquist F, Johansson N, Soderholm R, Nilsson P A, Bergman J P, Skytt P 2001 Mater. Sci. Forum. 353–356 727 Google Scholar
[2]	Skowronski M, Liu J Q, Vetter W M, Dudley M, Hallin C, Lendenmann H 2002 J. Appl. Phys. 92 4699 Google Scholar
[3]	Caldwell J D, Stahlbush R E, Ancona M G, Glembocki O J, Hobart K D 2010 J. Appl. Phys. 108 044503 Google Scholar
[4]	Maeda K, Hirano R, Sato Y, Tajima M 2012 Mater. Sci. Forum. 725 35 Google Scholar
[5]	Ha S, Mieszkowski P, Skowronski M, Rowland L B 2002 J. Cryst. Growth 244 257 Google Scholar
[6]	Tsuchida H, Kamata I, Miyazawa T, Ito M, Zhang X, Nagano M 2018 Mater. Sci. Semicond. Process. 78 2 Google Scholar
[7]	Tanaka A, Matsuhata H, Kawabata N, Mori D, Inoue K, Ryo M, Fujimoto T, Tawara T, Miyazato M, Miyajima M, Fukuda K, Ohtsuki A, Tomohisa T, Tsuchida H, Yonezawa Y, Kimoto T 2016 J. Appl. Phys. 119 095711 Google Scholar
[8]	Sumakeris J J, Bergman P, Das M K, Hallin C, Hull B A, Janzen E, Lendenmann H, O’Loughlin M J, Paisley M J, Ha S Y, Skowronski M, Palmour J W, Carter Jr C H 2006 Mater. Sci. Forum. 527-529 141 Google Scholar
[9]	Hori T, Danno K, Kimoto T 2007 J. Cryst. Growth. 306 297 Google Scholar
[10]	Stahlbush R E, VanMil B L, Myers Ward R L, Lew K K, Gaskill D K, Eddy Jr C R 2009 Appl. Phys. Lett. 94 041916 Google Scholar
[11]	Mahadik N A, Stahlbush R E, Ancona M G, Lmhoff E A, Hobart K D, Myers-Ward R L, Eddy Jr C R, Gaskill D K, Kub F J 2012 Appl. Phys. Lett. 100 042102 Google Scholar
[12]	Tawara T, Miyazawa T, Ryo M, Miyazato M, Fujimoto T, Takenaka K, Matsunaga S, Miyajima M, Otsuki A, Yonezawa Y, Kato T, Okumura H, Kimoto T, Tsuchida H 2016 J. Appl. Phys. 120 115101 Google Scholar
[13]	Miyazawa T, Tawara T, Tsuchida H 2017 Mater. Sci. Forum. 897 67 Google Scholar
[14]	Miyazawa T, Tawara T, Takanashi R, Tsuchida H 2016 Appl. Phys. Express 9 111301 Google Scholar
[15]	Murata K, Tawara T, Yang A, Takanashi R, Miyazawa T, Tsuchida H 2019 J. Appl. Phys. 126 045711 Google Scholar
[16]	Tawara T, Miyazawa T, Ryo M, Miyazato M, Fujimoto T, Takenaka K, Matsunaga S, Miyajima M, Otsuki A, Yonezawa Y, Kato T, Okumura H, Kimoto T, Tsuchida H 2017 Mater. Sci. Forum. 897 419 Google Scholar
[17]	Dalibor T, Pensl G, Matsunami H, Kimoto T, Choyke W J, Schoner A, Nordell N 1997 Phys. Status Solidi A 162 199 Google Scholar
[18]	Hobgood H M, Glass R C, Augustine G, Hopkins R H, Jenny J, Skowronski M, Mitchel W C, Roth M 1995 Appl. Phys. Lett. 66 1364 Google Scholar
[19]	Dalibor T, Pensl G, Nordell N, Schoner A 1997 Phys. Rev. B 55 13618 Google Scholar
[20]	Maier K, Muller H D, Schneider J 1992 Mater. Sci. Forum. 83–87 1183 Google Scholar

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