Recent progress of superconducting electronics in China

Li Chun-Guang; Wang Jia; Wu Yun; Wang Xu; Sun Liang; Dong Hui; Gao Bo; Li Hao; You Li-Xing; Lin Zhi-Rong; Ren Jie; Li Jing; Zhang Wen; He Qing; Wang Yi-Wen; Wei Lian-Fu; Sun Han-Cong; Wang Hua-Bing; Li Jin-Jin; Qu Ji-Feng

doi:10.7498/aps.70.20202121

Abstract

It has been nearly 110 years since the discovery of superconductors, and more than 30 years since the discovery of high temperature superconductors (HTS). Great progress has been made in the application of superconducting electronics in the last two decades. HTS microwave devices have shown much higher perfomance than the traditional ones and have found their ways to the industry applications in mobile communication, radar, and special communication applications. Owing to the ultrahigh sensitivity to magnetic fields and currents, superconducting quantum interference devices (SQUIDs) have been used as the irresplacible sensors in geological surveying, magnetic resonanc imaging, biomagnetic imaging, and other areas. The sensitivity of superconducting radiation detectors such as superconducting SIS mixer, superconducting hot electron bolometer, superconducting transition edge sensor, superconducting nanowire single photon detector, and superconducting microwave kinetic inductance detector are near the quantum limitation. They are now key technology in geophysics, astrophysics, quantum information science, biomedicine, and so on. Superconducting Josephson parametric amplifier has become a key element for superconducting quantum computing. Superconducting integrated circuit has been included in the international roadmap for devices and systems, and shows that having the potential to become one of the mainstreams for post-Moore information processing technology. In metrology, superconducting Josephson effect and Josephson junction array devices have been widely used in the redefinition of quantum voltage reference and basic units of the International system of Units. Superconducting electronics plays an important role in the current quantum information technology boom, which in turn promotes the development of superconducting electronics. This review will brief introduce the research and application of superconducting electronics in China in recent years.

Keywords:

Authors and contacts

1.
State Key Laboratory of Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2.
CAS Center for Excellence in Superconducting Electronics, Shanghai 200050, China
3.
Songshan Lake Materials Laboratory, Dongguan 523808, China
4.
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
5.
Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210023, China
6.
School of Information Science and Technology, Southwest Jiaotong University, Chengdu 610031, China
7.
School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China
8.
College of Science, Donghua University, Shanghai 210031, China
9.
Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210046, China
10.
Purple Mountain Laboratories, Nanjing 211111, China
11.
National Institute of Metrology, Beijing 100029, China

Corresponding author: Sun Liang, sunliang@iphy.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51972012, 61971415, 61601456, 61971408, 61671438, 61827823, 11673073, U1831202, 11974290, 61871333, 11653004, 61727805, 11961141002), Key Research and Development plan of the Ministry of Science and Technology, China(Grant Nos. 2017YFA0304000, 2017YFA0304003), the National Basic Research Program of China(Grant No. 2010CB923104), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No.XDA18000000) and the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2017009)

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Cited By

图 1 YBCO薄膜与铜的微波表面电阻的频率特性^[9]

Figure 1. Frequency dependence of the microwave surface resistance of YBCO film and copper^[9].

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图 2 物理所研发的通带频率为0.8−2.7 GHz的超宽带超导滤波器^[43]

Figure 2. HTS UWB filter with frequency band of 0.8− 2.7 GHz developed by Institute of Physics, Chinese Academy of Sciences^[43].

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图 3 华东交通大学任保平等^[50]研制的双通带平衡滤波器

Figure 3. HTS differential bandpass filter developed by East China Jiaotong University^[50].

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图 4 (a) 100 GHz频段超导接收机系统; (b) 赵忠贤院士和史生才研究员在已安装我国首台毫米波超导接收机系统的13.7米毫米波望远镜前的合影

Figure 4. (a) The first superconducting SIS receiver in China; (b) photo of professor Zhao Zhongxian and Shi Shengcai standing next to the astronomical telescope with superconducting SIS receiver inside.

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图 5 高集成度外差接收机　(a) 腔体里面集成了超导HEB混频器、QCL、抛物镜和Mylar分光膜; (b) 集成接收机光路图

Figure 5. Highly-integrated receiver based on superconducting HEB and QCL: (a) Superconducting HEB mixer, QCL, parabolic mirror and Mylar beamsplitter are integrated in the receiver block; (b) coupling of THz radiation from the QCL to the superconducting HEB.

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图 6 (a) 紫金山天文台研制的双缝天线耦合的TES功率计; (b) 上海微系统所研制的MoAu-TES微量能器

Figure 6. (a) TES with planar twin-slot antenna developed by Purple Mountain Observatory, Chinese Academy of Sciences; (b) MoAu-TES developed by Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences.

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图 7 单元MIKD实现1550 nm波段光子数可分辨的单光子探测^[164]　(a) 器件S21参数的复频面脉冲响应; (b) 可分辨7个光子的光子数分辨探测; (c) 集总型MKID, 红色表示光子吸收部位(高动态电感区); (d) 用于MKID光子计数实验的IQ-mixer零拍测量系统

Figure 7. Photon number resolution detection with one-pixel MKID at 1550 nm^[164]: (a) Pulse response in the complex S21 plane; (b) 7-photon resolution detection, and the averaged frequency and dissipation pulse responses in the time domain; (c) A MKID, the red regime (high kinetic inductance) for photon absorption; (d) IQ-mixer Homodyne detection for photon counting

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图 8 三种谐振腔模式参量放大器　(a) SQUID阵列谐振器腔的参量放大器^[188]; (b) 磁通驱动参量放大器^[189]; (c) 约瑟夫森参量转换器^[190]

Figure 8. Three resonance-type Josephson parametric amplifiers: (a)Josephson parametric amplifier based on a SQUID array resonator^[188]; (b) flux-driven Josephson parametric amplifier^[189]; (c) Josephson parametric converter^[190].

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图 9 SIMIT Nb03工艺下　(a) 电路TEM剖面图; (b) Nb/Al-AlO_x/Nb约瑟夫森结TEM剖面图

Figure 9. In SIMIT Nb03 process: (a) Sectional view of the TEM image of superconducting IC; (b) sectional view of the TEM image of Nb/Al-AlO_xx/Nb JJ.

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