Review on property regulation of semiconducting materials in flexible electronics

Wang Zhou-Heng; Chen Ying; Zheng Kun-Wei; Li Hai-Cheng; Ma Yin-Ji; Feng Xue

doi:10.7498/aps.70.20210095

Abstract

Flexible electronics technology plays an important role in regulating the properties of semiconducting materials, leading to the breakthrough in traditional strain engineering that is limited by the rigid and brittle inorganic materials and the fixed strain values. Thereby, the relevant research not only provides a new clue for strain regulation of semiconductor materials or other functional materials, but also lays a theoretical foundation for the performance evaluation of stretchable and flexible electronic devices based on inorganic functional materials in large-deformation environments. In this paper, the research progress of flexible inorganic electronics and strain effects on band structures, especially the property regulation of semiconducting materials in flexible electronics, is reviewed. Firstly, the nano-diamond particles based thinning process and the transfer printing are emphatically expounded with their influence on the properties of semiconducting electronics explored. In addition, the development and application of strain effect on band structure in recent years are introduced. In particular, the strain control based on buckling GaAs nanoribbon and buckling quantum well structure are studied to demonstrate the superior advantage of flexible electronics technology in the property regulation of semiconducting materials. The application and developing trend of strain engineering in the future are prospected finally.

Keywords:

stretchable and flexible electronics /
property regulation of semiconducting materials /
strain effects on band structures /
bulking

Authors and contacts

1.
Ministry of Education Key Laboratory of Applied Mechanics, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
2.
Center for Flexible Electronics Technology, Tsinghua University, Beijing 100084, China
3.
Institute of Flexible Electronics Technology of Tsinghua University, Zhejiang, Jiaxing 314000, China
4.
Qiantang Science and Technology Innovation Center, Hangzhou 310016, China

Corresponding author: Feng Xue, fengxue@tsinghua.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11625207, 11902292) and Zhejiang Province Key Research and Development Project, China (Grant Nos. 2020C05004, 2019C05002)

FullText HTML : translate this paragraph

References

[1]	Nathan A, Ahnood A, Cole M T, Lee S, Suzuki Y, Hiralal P, Bonaccorso F, Hasan T, Garcia-Gancedo L, Dyadyusha A, Haque S, Andrew P, Hofmann S, Moultrie J, Chu D, Flewitt A J, Ferrari A C, Kelly M J, Robertson J, Amaratunga G A J, Milne W I 2012 Proc. IEEE 100 1486 Google Scholar
[2]	Kim D H, Ghaffari R, Lu N, Rogers J A 2012 Annu. Rev. Biomed. Eng. 14 113 Google Scholar
[3]	Ma Y, Zhang Y, Cai S, Han Z, Liu X, Wang F, Cao Y, Wang Z, Li H, Chen Y, Feng X 2020 Adv. Mater. 32 1902062 Google Scholar
[4]	侯星宇, 郭传飞 2020 物理学报 69 178102 Google Scholar Hou X Y, Guo C F 2020 Acta Phys. Sin. 69 178102 Google Scholar
[5]	Khang D Y, Jiang H, Huang Y, Rogers J A 2006 Science 311 208 Google Scholar
[6]	Qi J, Qian X, Qi L, Feng J, Shi D, Li J 2012 Nano Lett. 12 1224 Google Scholar
[7]	Wang S D, Song J Z, Kim D H, Huang Y G, Rogers J A 2008 Appl. Phys. Lett. 93 023126 Google Scholar
[8]	Gassenq A, Guilloy K, Dias G O, Pauc N, Rouchon D, Hartmann J M, Widiez J, Tardif S, Rieutord F, Escalante J, Duchemin I, Niquet Y M, Geiger R, Zabel T, Sigg H, Faist J, Chelnokov A, Reboud V, Calvo V 2015 Appl. Phys. Lett. 107 191904 Google Scholar
[9]	Cai S, Zhang C, Li H, Lu S, Li Y, Hwang K C, Feng X 2017 AIP Adv. 7 035221 Google Scholar
[10]	Feng X, Yang B D, Liu Y M, Wang Y, Dagdeviren C, Liu Z J, Carlson A, Li J Y, Huang Y G, Rogers J A 2011 ACS Nano 5 3326 Google Scholar
[11]	江海波, 熊玲, 朱梦楠, 邓刚, 王小强 2015 半导体光电 36 930 Jiang H B, Xiong L, Zhu M N, Deng G, Wang X Q 2015 Semicond. Optoelectron. 36 930
[12]	Chen C C A, Shu L S, Lee S R 2003 J. Mater. Process. Technol. 140 373 Google Scholar
[13]	Gurnett K, Adams T 2006 III-Vs Review 19 38
[14]	唐晓琦, 淮璞 2014 半导体技术 39 442 Tang X Q, H P 2014 Semicond. Technol. 39 442
[15]	Li H, Xu Y, Li X, Chen Y, Jiang Y, Zhang C, Lu B, Wang J, Ma Y, Chen Y, Huang Y, Ding M, Su H, Song G, Luo Y, Feng X 2017 Adv. Healthcare Mater. 6 1601013 Google Scholar
[16]	Li H, Ma Y, Liang Z, Wang Z, Cao Y, Xu Y, Zhou H, Lu B, Chen Y, Han Z, Cai S, Feng X 2020 Natl. Sci. Rev 7 849 Google Scholar
[17]	Sun Y, Kumar V, Adesida I, Rogers J A 2006 Adv. Mater. 18 2857 Google Scholar
[18]	Choi W M, Song J Z, Khang D Y, Jiang H Q, Huang Y Y, Rogers J A 2007 Nano Lett. 7 1655 Google Scholar
[19]	Moon M W, Lee S H, Sun J Y, Oh K H, Vaziri A, Hutchinson J W 2007 PANS 104 1130 Google Scholar
[20]	Sun Y, Choi W M, Jiang H, Huang Y Y, Rogers J A 2006 Nat. Nanotechnol. 1 201 Google Scholar
[21]	Jiang H Q, Sun Y G, Rogers J A, Huang Y G 2008 Int. J. Solids Struct. 45 2014 Google Scholar
[22]	Kim D H, Song J Z, Choi W M, Kim H S, Kim R H, Liu Z J, Huang Y Y, Hwang K C, Zhang Y W, Rogers J A 2008 PANS 105 18675 Google Scholar
[23]	Kim D H, Xiao J L, Song J Z, Huang Y G, Rogers J A 2010 Adv. Mater. 22 2108 Google Scholar
[24]	Ko H C, Stoykovich M P, Song J, Malyarchuk V, Choi W M, Yu C J, Geddes Iii J B, Xiao J, Wang S, Huang Y, Rogers J A 2008 Nature 454 748 Google Scholar
[25]	Park S I, Xiong Y J, Kim R H, Elvikis P, Meitl M, Kim D H, Wu J, Yoon J, Yu C J, Liu Z J, Huang Y G, Hwang K, Ferreira P, Li X L, Choquette K, Rogers J A 2009 Science 325 977 Google Scholar
[26]	Zhang Y H, Fu H R, Su Y W, Xu S, Cheng H Y, Fan J A, Hwang K C, Rogers J A, Huang Y G 2013 Acta Mater. 61 7816 Google Scholar
[27]	Xu S, Zhang Y H, Cho J, Lee J, Huang X, Jia L, Fan J A, Su Y W, Su J, Zhang H G, Cheng H Y, Lu B W, Yu C J, Chuang C, Kim T I, Song T, Shigeta K, Kang S, Dagdeviren C, Petrov I, Braun P V, Huang Y G, Paik U, Rogers J A 2013 Nat. Commun. 4 1543 Google Scholar
[28]	Carlson A, Bowen A M, Huang Y, Nuzzo R G, Rogers J A 2012 Adv. Mater. 24 5284 Google Scholar
[29]	Meitl M A, Zhu Z T, Kumar V, Lee K J, Feng X, Huang Y Y, Adesida I, Nuzzo R G, Rogers J A 2006 Nat. Mater. 5 33 Google Scholar
[30]	Kim-Lee H J, Carlson A, Grierson D S, Rogers J A, Turner K T 2014 J. Appl. Phys. 115 143513 Google Scholar
[31]	黄银, 李海成, 陈颖, 蔡世生, 张迎超, 陆炳卫, 冯雪 2016 中国科学: 物理学力学天文学 46 044607 Huang Y, Li H C, Chen Y, Cai S S, Zhang Y C, Lu B W, Feng X 2016 Sci. China-Phys. Mech. Astron. 46 044607
[32]	Feng X, Meitl M A, Bowen A M, Huang Y, Nuzzo R G, Rogers J A 2007 Langmuir 23 12555 Google Scholar
[33]	Chen H, Feng X, Huang Y, Huang Y, Rogers J A 2013 J. Mech. Phys. Solids 61 1737 Google Scholar
[34]	Kim S, Wu J, Carlson A, Jin S H, Kovalsky A, Glass P, Liu Z, Ahmed N, Elgan S L, Chen W, Ferreira P M, Sitti M, Huang Y, Rogers J A 2010 PANS 107 17095 Google Scholar
[35]	Eisenhaure J D, Rhee S I, Al-Okaily A M, Carlson A, Ferreira P M, Kim S 2014 J. Microelectromech. Syst. 23 1012 Google Scholar
[36]	Huang Y, Zheng N, Cheng Z, Chen Y, Lu B, Xie T, Feng X 2016 ACS Appl. Mater. Interfaces 8 35628 Google Scholar
[37]	Sim K, Chen S, Li Y, Kammoun M, Peng Y, Xu M, Gao Y, Song J, Zhang Y, Ardebili H, Yu C 2015 Sci. Rep. 5 16133 Google Scholar
[38]	Linghu C, Wang C, Cen N, Wu J, Lai Z, Song J 2019 Soft Matter 15 30 Google Scholar
[39]	Li H, Wang Z, Cao Y, Chen Y, Feng X 2021 ACS Appl. Mater. Interfaces 13 1612 Google Scholar
[40]	Lee J, Wu J, Shi M, Yoon J, Park S I, Li M, Liu Z, Huang Y, Rogers J A 2011 Adv. Mater. 23 986 Google Scholar
[41]	Song Y M, Xie Y, Malyarchuk V, Xiao J, Jung I, Choi K J, Liu Z, Park H, Lu C, Kim R H, Li R, Crozier K B, Huang Y, Rogers J A 2013 Nature 497 95 Google Scholar
[42]	Yan Z, Pan T, Xue M, Chen C, Cui Y, Yao G, Huang L, Liao F, Jing W, Zhang H, Gao M, Guo D, Xia Y, Lin Y 2017 Adv. Sci. 4 1700251 Google Scholar
[43]	罗鸿羽, 令狐昌鸿, 宋吉舟 2018 中国科学: 物理学力学天文学 48 094610 Luo H Y, Linghu C H, Song J Z 2018 Sci. China-Phys. Mech. Astron. 48 094610
[44]	Li H, Cao Y, Wang Z, Feng X 2019 Opt. Mater. Express 9 4023 Google Scholar
[45]	Chen Y, Zhang Y, Liang Z, Cao Y, Han Z, Feng X 2020 npj Flexible Electron. 4 2 Google Scholar
[46]	冯雪, 陆炳卫, 吴坚, 林媛, 宋吉舟, 宋国锋, 黄永刚 2014 物理学报 63 014201 Google Scholar Feng X, Lu B W, Wu J, Lin Y, Song J Z, Song G F, Huang Y G 2014 Acta Phys. Sin. 63 014201 Google Scholar
[47]	Li K, Chen L, Zhu F, Huang Y 2020 J. Appl. Mech. 88 021011
[48]	Ning S, Chu D, Yang F, Jiang H, Liu Z, Zhuang Z 2021 J. Appl. Mech. 88 051001 Google Scholar
[49]	Chen Y, Lu S, Zhang S, Li Y, Qu Z, Chen Y, Lu B, Wang X, Feng X 2017 Sci. Adv. 3 1701629 Google Scholar
[50]	Cao Y, Zhang G, Zhang Y, Yue M, Chen Y, Cai S, Xie T, Feng X 2018 Adv. Funct. Mater. 28 1804604 Google Scholar
[51]	Han Z, Cheng Z, Chen Y, Li B, Liang Z, Li H, Ma Y, Feng X 2019 Nanoscale 11 5942 Google Scholar
[52]	Chen Y, Lu B, Chen Y, Feng X 2016 IEEE Electron Device Lett. 37 496 Google Scholar
[53]	Zhang Y, Zheng N, Cao Y, Wang F, Wang P, Ma Y, Lu B, Hou G, Fang Z, Liang Z, Yue M, Li Y, Chen Y, Fu J, Wu J, Xie T, Feng X 2019 Sci. Adv. 5 1066 Google Scholar
[54]	Liang Z, Cheng J, Zhao Q, Zhao X, Han Z, Chen Y, Ma Y, Feng X 2019 Adv. Mater. Technol. 4 1900317 Google Scholar
[55]	Viventi J, Kim D H, Vigeland L, Frechette E S, Blanco J A, Kim Y S, Avrin A E, Tiruvadi V R, Hwang S W, Vanleer A C, Wulsin D F, Davis K, Gelber C E, Palmer L, van der Spiegel J, Wu J, Xiao J, Huang Y, Contreras D, Rogers J A, Litt B 2011 Nat. Neurosci. 14 1599 Google Scholar
[56]	Aberg I, Cait Ni C, Hoyt J L 2006 IEEE Trans. Electron Devices 53 1021 Google Scholar
[57]	Mazure C, Cayrefourcq I 2005 IEEE International SOI Conference Proceedings Honolulu, USA, October 3−6 2005 p1
[58]	Acosta T, Sood S 2006 IEEE Potentials 25 31
[59]	马建立 2012 博士学位论文 (西安: 西安电子科技大学) Ma J L 2012 Ph. D. Dissertation (Xian: Xidian University) (in Chinese)
[60]	Haeni J H, Irvin P, Chang W, Uecker R, Reiche P, Li Y L, Choudhury S, Tian W, Hawley M E, Craigo B, Tagantsev A K, Pan X Q, Streiffer S K, Chen L Q, Kirchoefer S W, Levy J, Schlom D G 2004 Nature 430 758 Google Scholar
[61]	Kim Y S, Choi J S, Kim J, Moon S J, Park B H, Yu J, Kwon J H, Kim M, Chung J S, Noh T W, Yoon J G 2010 Appl. Phys. Lett. 97 242907 Google Scholar
[62]	杨远俊 2013 博士学位论文 (合肥: 中国科学技术大学) Yang Y J 2013 Ph. D. Dissertation (Hefei: University of Science and Technology of China) (in Chinese)
[63]	Kim W J, Oh T, Song J, Ko E K, Li Y Y, Mun J, Kim B, Son J, Yang Z, Kohama Y, Kim M, Yang B J, Noh T W 2020 Sci. Adv. 6 1539
[64]	Xu R J, Huang J W, Barnard E S, Hong S S, Singh P, Wong E K, Jansen T, Harbola V, Xiao J, Wang B Y, Crossley S, Lu D, Liu S, Hwang H Y 2020 Nat. Commun. 11 3141 Google Scholar
[65]	傅德颐 2012 博士学位论文 (南京: 南京大学) Fu D Y 2012 Ph. D. Dissertation (Nanjing: Nanjing University) (in Chinese)
[66]	Khan M A, Yang J W, Simin G, Gaska R, Shur M S, Loye H C Z, Tamulaitis G, Zukauskas A, Smith D J, Chandrasekhar D, Bicknell-Tassius R 2000 Appl. Phys. Lett. 76 1161 Google Scholar
[67]	Schwarze M, Tress W, Beyer B, Gao F, Scholz R, Poelking C, Ortstein K, Günther A A, Kasemann D, Andrienko D, Leo K 2016 Science 352 1446 Google Scholar
[68]	Doi A, Shimano S, Inoue D, Kikitsu T, Hirai T, Hashizume D, Tokura Y, Taguchi Y 2019 APL Mater. 7 091107 Google Scholar
[69]	吴丰, 郭志伟, 吴家驹, 江海涛, 杜桂强 2020 物理学报 69 154205 Google Scholar Wu F, Guo Z W, Wu J J, Jiang H T, Du G Q 2020 Acta Phys. Sin. 69 154205 Google Scholar
[70]	Kuo C P, Vong S K, Cohen R M, Stringfellow G B 1985 J. Appl. Phys. 57 5428 Google Scholar
[71]	Danan G, Etienne B, Mollot F, Planel R, Jean-Louis A M, Alexandre F, Jusserand B, Le Roux G, Marzin J Y, Savary H, Sermage B 1987 Phys. Rev. B 35 6207 Google Scholar
[72]	Li H, Tsai C, Koh A L, Cai L L, Contryman A W, Fragapane A H, Zhao J H, Han H S, Manoharan H C, Abild-Pedersen F, Norskov J K, Zheng X L 2016 Nat. Mater. 15 48 Google Scholar
[73]	Akinwande D, Petrone N, Hone J 2014 Nat. Commun. 5 5678 Google Scholar
[74]	Li H, Contryman A W, Qian X F, Ardakani S M, Gong Y J, Wang X L, Weisse J M, Lee C H, Zhao J H, Ajayan P M, Li J, Manoharan H C, Zheng X L 2015 Nat. Commun. 6 7381 Google Scholar
[75]	Castellanos-Gomez A, Roldan R, Cappelluti E, Buscema M, Guinea F, van der Zant H S J, Steele G A 2013 Nano Lett. 13 5361 Google Scholar
[76]	Amorim B, Cortijo A, de Juan F, Grushine A G, Guinea F, Gutierrez-Rubio A, Ochoa H, Parente V, Roldan R, San-Jose P, Schiefele J, Sturla M, Vozmediano M A H 2016 Phys. Rep. 617 1 Google Scholar
[77]	Wei B, Zheng K, Ji Y, Zhang Y, Zhang Z, Han X 2012 Nano Lett. 12 4595 Google Scholar
[78]	Signorello G, Karg S, Björk M T, Gotsmann B, Riel H 2013 Nano Lett. 13 917 Google Scholar
[79]	Conley H J, Wang B, Ziegler J I, Haglund R F, Pantelides S T, Bolotin K I 2013 Nano Lett. 13 3626 Google Scholar
[80]	Lloyd D, Liu X, Christopher J W, Cantley L, Wadehra A, Kim B L, Goldberg B B, Swan A K, Bunch J S 2016 Nano Lett. 16 5836 Google Scholar
[81]	Boztug C, Sanchez-Perez J R, Cavallo F, Lagally M G, Paiella R 2014 ACS Nano 8 3136 Google Scholar
[82]	Petykiewicz J, Nam D, Sukhdeo D S, Gupta S, Buckley S, Piggott A Y, Vuckovic J, Saraswat K C 2016 Nano Lett. 16 2168 Google Scholar
[83]	Pilon F T A, Lyasota A, Niquet Y M, Reboud V, Calvo V, Pauc N, Widiez J, Bonzon C, Hartmann J M, Chelnokov A, Faist J, Sigg H 2019 Nat. Commun. 10 2724 Google Scholar
[84]	Sukhdeo D S, Nam D, Kang J H, Brongersma M L, Saraswat K C 2014 Photonics Res. 2 8 Google Scholar
[85]	江佳霖 2019 博士学位论文 (武汉: 华中科技大学) Jiang J L 2019 Ph. D. Dissertation (Wuhan: Huazhong University of Science and Technology)(in Chinese)
[86]	Sánchez-Pérez J R, Boztug C, Chen F, Sudradjat F F, Paskiewicz D M, Jacobson R B, Lagally M G, Paiella R 2011 PANS 108 18893 Google Scholar
[87]	Süess M J, Geiger R, Minamisawa R A, Schiefler G, Frigerio J, Chrastina D, Isella G, Spolenak R, Faist J, Sigg H 2013 Nat. Photonics 7 466 Google Scholar
[88]	Bao S, Kim D, Onwukaeme C, Gupta S, Saraswat K, Lee K H, Kim Y, Min D, Jung Y, Qiu H D, Wang H, Fitzgerald E A, Tan C S, Nam D 2017 Nat. Commun. 8 1845 Google Scholar
[89]	Wang Y, Chen Y, Li H, Li X, Chen H, Su H, Lin Y, Xu Y, Song G, Feng X 2016 ACS Nano 10 8199 Google Scholar
[90]	Jiang H, Khang D Y, Song J, Sun Y, Huang Y, Rogers J A 2007 PANS 104 15607 Google Scholar
[91]	Song J, Jiang H, Huang Y, Rogers J A 2009 J. Vac. Sci. Technol. A 27 1107 Google Scholar
[92]	Zhang J, Xu Y, Jiang Y, Bai L, Chen H, Li J, Wang L, Wu W, Song G 2018 Nanoscale 10 12657 Google Scholar

Cited By

图 1 柔性无机电子技术与半导体材料性能调控相结合, 设计优化半导体器件^[6-10]

Figure 1. Combine flexible inorganic electronics with the property regulation of semiconducting materials to design and optimize semiconductor devices^[6-10].

DownLoad: Full-Size Img PowerPoint

图 2 芯片减薄表征及性能测试　(a) 发光二极管(红光, 砷化镓)及光电探测器(硅)减薄后厚度方向和功能层表面SEM图片; 超薄半导体光电器件性能测试: 发光器件(红外光及红光LED)的电致发光(electro luminescence, EL)光谱, 以及光电探测器的绝对光谱响应(absolute specular reflectance, ASR)^[15,16]. (b) MOS管减薄后光镜图; 减薄前后转移特性曲线及输出特性曲线对比

Figure 2. Characterization and properties of the thin-film semiconductors fabricated by thinning process: (a) SEM images show the thickness of the ultrathin red light LED and photodetector. Insets is the microstructure of the chips after thinning via the nano-diamond thinning process. Electroluminescence (electro luminescence, EL) spectra of light-emitting elements (infrared light and red light) and the absolute spectral responsibility (absolute specular reflectance, ASR) of photodetector used in the skin-like device^[15,16]; (b) optical image of the MOSFET after thinning process. The comparison of transfer characteristics at V_d = 3 V and output characteristics at V_g = 3 V of MOSFET between thin-film and original semiconductors.

DownLoad: Full-Size Img PowerPoint

图 3 可延展柔性结构设计　(a) 单晶硅条带在PDMS基体上形成波浪结构的扫描电子显微镜照片^[5]; (b) 砷化镓纳米条带在PDMS基体部分粘合形成波浪结构的扫描电子显微镜照片^[20]; (c) 硅纳米薄膜在PDMS基体上的岛桥结构扫描电子显微镜照片^[22,23]; (d) 蛇形导线岛桥结构互连的可拉伸CMOS反相器阵列的扫描电子显微镜照片^[22,23]

Figure 3. Designs of the flexible and stretchable structure: (a) SEM images of wavy, single-crystal Si ribbons^[5]; (b) SEM images of an array of gallium arsenide nanoribbons in buckled shapes where bonding to the PDMS substrate occurs only at the positions of the troughs, as illustrated in the top inset^[20]; (c) SEM image of a silicon nanomembrane in a buckled, mesh layout on PDMS^[22,23]; (d) SEM images of an array of stretchable CMOS inverters with noncoplanar bridges that have serpentine layouts^[22,23].

DownLoad: Full-Size Img PowerPoint

图 4 转印技术　(a) 基于率相关印章的转印技术^[32]; (b) 基于磁控的转印技术^[38]; (c) 基于液滴的转印技术^[39]

Figure 4. Transfer printing techniques: (a) Kinetically controlled transfer printing^[32]; (b) magnetically actuated transfer printing^[38]; (c) transfer printing using droplet stamps^[39].

DownLoad: Full-Size Img PowerPoint

图 5 可延展柔性传感器在健康医疗中的应用　(a) 用于神经电刺激与电信号采集的螺旋电极^[53]; (b) 与假手集成的柔性触觉传感器^[54]; (c) 可延展柔性血氧及血压监测系统^[16]

Figure 5. Applications of stretchable and flexible electronics: (a) Climbing-inspired twining electrodes using shape memory for peripheral nerve stimulation and recording^[53]; (b) flexible tactile sensor integrated with a soft prosthetic hand^[54]; (c) wearable skin-like optoelectronic systems for cuff-less continuous blood pressure monitor^[16].

DownLoad: Full-Size Img PowerPoint

图 6 低维材料中的应变-能带结构耦合关系　(a) 单轴拉伸调控氧化锌纳米线^[77]; (b) 单轴拉压调控GaAs/Al_0.3Ga_0.7As/GaAs核壳结构纳米线^[78]; (c) 双轴应变调控单层二硫化钼薄膜^[80]

Figure 6. Applications of strain effects on band structures to low-dimensional materials: (a) The shifts of the near-band-edge (NBE) peak for the 100 nm nano-wire (NW) by tension and the photon energy versus strain curves for ZnO NWs with different diameters^[77]; (b) schematic of a GaAs-Al_0.3Ga_0.7As-GaAs core-shell nanowire and photoluminescence (PL) spectra measured for different values of applied uniaxial stress^[78]; (c) the monolayer MoS₂ bulged up or down depending on whether Δp is positive or negative and in situ measurements of PL spectra for a monolayer device^[80].

DownLoad: Full-Size Img PowerPoint

图 7 锗材料中的应变-能带结构耦合关系　(a) 双轴应变调控锗纳米薄膜^[86]; (b) 锗微桥应变结构及光致发光谱(室温)^[87]; (c) 单轴拉应变锗DBR激光器及不同泵浦光功率下的光致发光谱(80 K)^[88]

Figure 7. Applications of strain effects on band structures to Ge material: (a) Ge nanomembranes(NMs) and schematic sample mount and PL spectra of a 40 nm thick Ge NM at different levels of biaxial tensile strain^[86]; (b) differential interference contrast light-microscopy image of a Ge/SOI structure and μPL spectra taken from structures with increasing longitudinal strain up to 3.1% and excitation in the center of the constriction^[87]; (c) Schematic illustration of a typical Ge nanowire laser consisting of a strained nanowire surrounded by a pair of distributed Bragg reflectors (DBRs) on the stressing pads and power-dependent photoluminescence spectra of a 1.6% strained Ge nanowire with DBRs showing a gradual transition from broad spontaneous emission to multimode lasing oscillation (threshold, 3.0 kW/cm²)^[88].

DownLoad: Full-Size Img PowerPoint

图 8 功能纳米条带屈曲图及能隙与形貌叠加图^[89]　(a) GaAs纳米条带屈曲制备流程示意图; (b) 屈曲条带光镜图及3D形貌图; (c) 单个周期内GaAs的能隙变化与形貌变化叠加图

Figure 8. Buckling-based method for measuring the strain-photonic coupling effect of GaAs nanoribbons^[89]: (a) Schematic procedures of fabricating the Al_xGa_1–_xAs wavy geometry on PDMS; (b) optical microscope image, 3D microstructure, and profile details of a single ribbon for three samples; (c) band gap mapping by PL scanning within one period in the wavy ribbon.

DownLoad: Full-Size Img PowerPoint

图 9 半导体量子阱结构的应变调控^[92]　(a) Al_0.3Ga_0.7As/GaAs/Al_0.3Ga_0.7As量子阱结构屈曲制备流程示意图; (b) 量子阱结构屈曲条带的能隙分布; (c) 量子阱结构实现能隙调控优化示意图

Figure 9. Strain engineering in quantum well embedded in wavy nanoribbons^[92]: (a) Schematic procedures of fabricating the wavy quantum well nanoribbons (QWNRs) on PDMS; (b) strain effect on the photonic property of the wavy QWNR; (c) band gap variation of a single QWNR as a function of wave intensity A/λ and the location of QW r/d within the fracture limit of the nanoribbon.

DownLoad: Full-Size Img PowerPoint

[1]	Nathan A, Ahnood A, Cole M T, Lee S, Suzuki Y, Hiralal P, Bonaccorso F, Hasan T, Garcia-Gancedo L, Dyadyusha A, Haque S, Andrew P, Hofmann S, Moultrie J, Chu D, Flewitt A J, Ferrari A C, Kelly M J, Robertson J, Amaratunga G A J, Milne W I 2012 Proc. IEEE 100 1486 Google Scholar
[2]	Kim D H, Ghaffari R, Lu N, Rogers J A 2012 Annu. Rev. Biomed. Eng. 14 113 Google Scholar
[3]	Ma Y, Zhang Y, Cai S, Han Z, Liu X, Wang F, Cao Y, Wang Z, Li H, Chen Y, Feng X 2020 Adv. Mater. 32 1902062 Google Scholar
[4]	侯星宇, 郭传飞 2020 物理学报 69 178102 Google Scholar Hou X Y, Guo C F 2020 Acta Phys. Sin. 69 178102 Google Scholar
[5]	Khang D Y, Jiang H, Huang Y, Rogers J A 2006 Science 311 208 Google Scholar
[6]	Qi J, Qian X, Qi L, Feng J, Shi D, Li J 2012 Nano Lett. 12 1224 Google Scholar
[7]	Wang S D, Song J Z, Kim D H, Huang Y G, Rogers J A 2008 Appl. Phys. Lett. 93 023126 Google Scholar
[8]	Gassenq A, Guilloy K, Dias G O, Pauc N, Rouchon D, Hartmann J M, Widiez J, Tardif S, Rieutord F, Escalante J, Duchemin I, Niquet Y M, Geiger R, Zabel T, Sigg H, Faist J, Chelnokov A, Reboud V, Calvo V 2015 Appl. Phys. Lett. 107 191904 Google Scholar
[9]	Cai S, Zhang C, Li H, Lu S, Li Y, Hwang K C, Feng X 2017 AIP Adv. 7 035221 Google Scholar
[10]	Feng X, Yang B D, Liu Y M, Wang Y, Dagdeviren C, Liu Z J, Carlson A, Li J Y, Huang Y G, Rogers J A 2011 ACS Nano 5 3326 Google Scholar
[11]	江海波, 熊玲, 朱梦楠, 邓刚, 王小强 2015 半导体光电 36 930 Jiang H B, Xiong L, Zhu M N, Deng G, Wang X Q 2015 Semicond. Optoelectron. 36 930
[12]	Chen C C A, Shu L S, Lee S R 2003 J. Mater. Process. Technol. 140 373 Google Scholar
[13]	Gurnett K, Adams T 2006 III-Vs Review 19 38
[14]	唐晓琦, 淮璞 2014 半导体技术 39 442 Tang X Q, H P 2014 Semicond. Technol. 39 442
[15]	Li H, Xu Y, Li X, Chen Y, Jiang Y, Zhang C, Lu B, Wang J, Ma Y, Chen Y, Huang Y, Ding M, Su H, Song G, Luo Y, Feng X 2017 Adv. Healthcare Mater. 6 1601013 Google Scholar
[16]	Li H, Ma Y, Liang Z, Wang Z, Cao Y, Xu Y, Zhou H, Lu B, Chen Y, Han Z, Cai S, Feng X 2020 Natl. Sci. Rev 7 849 Google Scholar
[17]	Sun Y, Kumar V, Adesida I, Rogers J A 2006 Adv. Mater. 18 2857 Google Scholar
[18]	Choi W M, Song J Z, Khang D Y, Jiang H Q, Huang Y Y, Rogers J A 2007 Nano Lett. 7 1655 Google Scholar
[19]	Moon M W, Lee S H, Sun J Y, Oh K H, Vaziri A, Hutchinson J W 2007 PANS 104 1130 Google Scholar
[20]	Sun Y, Choi W M, Jiang H, Huang Y Y, Rogers J A 2006 Nat. Nanotechnol. 1 201 Google Scholar
[21]	Jiang H Q, Sun Y G, Rogers J A, Huang Y G 2008 Int. J. Solids Struct. 45 2014 Google Scholar
[22]	Kim D H, Song J Z, Choi W M, Kim H S, Kim R H, Liu Z J, Huang Y Y, Hwang K C, Zhang Y W, Rogers J A 2008 PANS 105 18675 Google Scholar
[23]	Kim D H, Xiao J L, Song J Z, Huang Y G, Rogers J A 2010 Adv. Mater. 22 2108 Google Scholar
[24]	Ko H C, Stoykovich M P, Song J, Malyarchuk V, Choi W M, Yu C J, Geddes Iii J B, Xiao J, Wang S, Huang Y, Rogers J A 2008 Nature 454 748 Google Scholar
[25]	Park S I, Xiong Y J, Kim R H, Elvikis P, Meitl M, Kim D H, Wu J, Yoon J, Yu C J, Liu Z J, Huang Y G, Hwang K, Ferreira P, Li X L, Choquette K, Rogers J A 2009 Science 325 977 Google Scholar
[26]	Zhang Y H, Fu H R, Su Y W, Xu S, Cheng H Y, Fan J A, Hwang K C, Rogers J A, Huang Y G 2013 Acta Mater. 61 7816 Google Scholar
[27]	Xu S, Zhang Y H, Cho J, Lee J, Huang X, Jia L, Fan J A, Su Y W, Su J, Zhang H G, Cheng H Y, Lu B W, Yu C J, Chuang C, Kim T I, Song T, Shigeta K, Kang S, Dagdeviren C, Petrov I, Braun P V, Huang Y G, Paik U, Rogers J A 2013 Nat. Commun. 4 1543 Google Scholar
[28]	Carlson A, Bowen A M, Huang Y, Nuzzo R G, Rogers J A 2012 Adv. Mater. 24 5284 Google Scholar
[29]	Meitl M A, Zhu Z T, Kumar V, Lee K J, Feng X, Huang Y Y, Adesida I, Nuzzo R G, Rogers J A 2006 Nat. Mater. 5 33 Google Scholar
[30]	Kim-Lee H J, Carlson A, Grierson D S, Rogers J A, Turner K T 2014 J. Appl. Phys. 115 143513 Google Scholar
[31]	黄银, 李海成, 陈颖, 蔡世生, 张迎超, 陆炳卫, 冯雪 2016 中国科学: 物理学力学天文学 46 044607 Huang Y, Li H C, Chen Y, Cai S S, Zhang Y C, Lu B W, Feng X 2016 Sci. China-Phys. Mech. Astron. 46 044607
[32]	Feng X, Meitl M A, Bowen A M, Huang Y, Nuzzo R G, Rogers J A 2007 Langmuir 23 12555 Google Scholar
[33]	Chen H, Feng X, Huang Y, Huang Y, Rogers J A 2013 J. Mech. Phys. Solids 61 1737 Google Scholar
[34]	Kim S, Wu J, Carlson A, Jin S H, Kovalsky A, Glass P, Liu Z, Ahmed N, Elgan S L, Chen W, Ferreira P M, Sitti M, Huang Y, Rogers J A 2010 PANS 107 17095 Google Scholar
[35]	Eisenhaure J D, Rhee S I, Al-Okaily A M, Carlson A, Ferreira P M, Kim S 2014 J. Microelectromech. Syst. 23 1012 Google Scholar
[36]	Huang Y, Zheng N, Cheng Z, Chen Y, Lu B, Xie T, Feng X 2016 ACS Appl. Mater. Interfaces 8 35628 Google Scholar
[37]	Sim K, Chen S, Li Y, Kammoun M, Peng Y, Xu M, Gao Y, Song J, Zhang Y, Ardebili H, Yu C 2015 Sci. Rep. 5 16133 Google Scholar
[38]	Linghu C, Wang C, Cen N, Wu J, Lai Z, Song J 2019 Soft Matter 15 30 Google Scholar
[39]	Li H, Wang Z, Cao Y, Chen Y, Feng X 2021 ACS Appl. Mater. Interfaces 13 1612 Google Scholar
[40]	Lee J, Wu J, Shi M, Yoon J, Park S I, Li M, Liu Z, Huang Y, Rogers J A 2011 Adv. Mater. 23 986 Google Scholar
[41]	Song Y M, Xie Y, Malyarchuk V, Xiao J, Jung I, Choi K J, Liu Z, Park H, Lu C, Kim R H, Li R, Crozier K B, Huang Y, Rogers J A 2013 Nature 497 95 Google Scholar
[42]	Yan Z, Pan T, Xue M, Chen C, Cui Y, Yao G, Huang L, Liao F, Jing W, Zhang H, Gao M, Guo D, Xia Y, Lin Y 2017 Adv. Sci. 4 1700251 Google Scholar
[43]	罗鸿羽, 令狐昌鸿, 宋吉舟 2018 中国科学: 物理学力学天文学 48 094610 Luo H Y, Linghu C H, Song J Z 2018 Sci. China-Phys. Mech. Astron. 48 094610
[44]	Li H, Cao Y, Wang Z, Feng X 2019 Opt. Mater. Express 9 4023 Google Scholar
[45]	Chen Y, Zhang Y, Liang Z, Cao Y, Han Z, Feng X 2020 npj Flexible Electron. 4 2 Google Scholar
[46]	冯雪, 陆炳卫, 吴坚, 林媛, 宋吉舟, 宋国锋, 黄永刚 2014 物理学报 63 014201 Google Scholar Feng X, Lu B W, Wu J, Lin Y, Song J Z, Song G F, Huang Y G 2014 Acta Phys. Sin. 63 014201 Google Scholar
[47]	Li K, Chen L, Zhu F, Huang Y 2020 J. Appl. Mech. 88 021011
[48]	Ning S, Chu D, Yang F, Jiang H, Liu Z, Zhuang Z 2021 J. Appl. Mech. 88 051001 Google Scholar
[49]	Chen Y, Lu S, Zhang S, Li Y, Qu Z, Chen Y, Lu B, Wang X, Feng X 2017 Sci. Adv. 3 1701629 Google Scholar
[50]	Cao Y, Zhang G, Zhang Y, Yue M, Chen Y, Cai S, Xie T, Feng X 2018 Adv. Funct. Mater. 28 1804604 Google Scholar
[51]	Han Z, Cheng Z, Chen Y, Li B, Liang Z, Li H, Ma Y, Feng X 2019 Nanoscale 11 5942 Google Scholar
[52]	Chen Y, Lu B, Chen Y, Feng X 2016 IEEE Electron Device Lett. 37 496 Google Scholar
[53]	Zhang Y, Zheng N, Cao Y, Wang F, Wang P, Ma Y, Lu B, Hou G, Fang Z, Liang Z, Yue M, Li Y, Chen Y, Fu J, Wu J, Xie T, Feng X 2019 Sci. Adv. 5 1066 Google Scholar
[54]	Liang Z, Cheng J, Zhao Q, Zhao X, Han Z, Chen Y, Ma Y, Feng X 2019 Adv. Mater. Technol. 4 1900317 Google Scholar
[55]	Viventi J, Kim D H, Vigeland L, Frechette E S, Blanco J A, Kim Y S, Avrin A E, Tiruvadi V R, Hwang S W, Vanleer A C, Wulsin D F, Davis K, Gelber C E, Palmer L, van der Spiegel J, Wu J, Xiao J, Huang Y, Contreras D, Rogers J A, Litt B 2011 Nat. Neurosci. 14 1599 Google Scholar
[56]	Aberg I, Cait Ni C, Hoyt J L 2006 IEEE Trans. Electron Devices 53 1021 Google Scholar
[57]	Mazure C, Cayrefourcq I 2005 IEEE International SOI Conference Proceedings Honolulu, USA, October 3−6 2005 p1
[58]	Acosta T, Sood S 2006 IEEE Potentials 25 31
[59]	马建立 2012 博士学位论文 (西安: 西安电子科技大学) Ma J L 2012 Ph. D. Dissertation (Xian: Xidian University) (in Chinese)
[60]	Haeni J H, Irvin P, Chang W, Uecker R, Reiche P, Li Y L, Choudhury S, Tian W, Hawley M E, Craigo B, Tagantsev A K, Pan X Q, Streiffer S K, Chen L Q, Kirchoefer S W, Levy J, Schlom D G 2004 Nature 430 758 Google Scholar
[61]	Kim Y S, Choi J S, Kim J, Moon S J, Park B H, Yu J, Kwon J H, Kim M, Chung J S, Noh T W, Yoon J G 2010 Appl. Phys. Lett. 97 242907 Google Scholar
[62]	杨远俊 2013 博士学位论文 (合肥: 中国科学技术大学) Yang Y J 2013 Ph. D. Dissertation (Hefei: University of Science and Technology of China) (in Chinese)
[63]	Kim W J, Oh T, Song J, Ko E K, Li Y Y, Mun J, Kim B, Son J, Yang Z, Kohama Y, Kim M, Yang B J, Noh T W 2020 Sci. Adv. 6 1539
[64]	Xu R J, Huang J W, Barnard E S, Hong S S, Singh P, Wong E K, Jansen T, Harbola V, Xiao J, Wang B Y, Crossley S, Lu D, Liu S, Hwang H Y 2020 Nat. Commun. 11 3141 Google Scholar
[65]	傅德颐 2012 博士学位论文 (南京: 南京大学) Fu D Y 2012 Ph. D. Dissertation (Nanjing: Nanjing University) (in Chinese)
[66]	Khan M A, Yang J W, Simin G, Gaska R, Shur M S, Loye H C Z, Tamulaitis G, Zukauskas A, Smith D J, Chandrasekhar D, Bicknell-Tassius R 2000 Appl. Phys. Lett. 76 1161 Google Scholar
[67]	Schwarze M, Tress W, Beyer B, Gao F, Scholz R, Poelking C, Ortstein K, Günther A A, Kasemann D, Andrienko D, Leo K 2016 Science 352 1446 Google Scholar
[68]	Doi A, Shimano S, Inoue D, Kikitsu T, Hirai T, Hashizume D, Tokura Y, Taguchi Y 2019 APL Mater. 7 091107 Google Scholar
[69]	吴丰, 郭志伟, 吴家驹, 江海涛, 杜桂强 2020 物理学报 69 154205 Google Scholar Wu F, Guo Z W, Wu J J, Jiang H T, Du G Q 2020 Acta Phys. Sin. 69 154205 Google Scholar
[70]	Kuo C P, Vong S K, Cohen R M, Stringfellow G B 1985 J. Appl. Phys. 57 5428 Google Scholar
[71]	Danan G, Etienne B, Mollot F, Planel R, Jean-Louis A M, Alexandre F, Jusserand B, Le Roux G, Marzin J Y, Savary H, Sermage B 1987 Phys. Rev. B 35 6207 Google Scholar
[72]	Li H, Tsai C, Koh A L, Cai L L, Contryman A W, Fragapane A H, Zhao J H, Han H S, Manoharan H C, Abild-Pedersen F, Norskov J K, Zheng X L 2016 Nat. Mater. 15 48 Google Scholar
[73]	Akinwande D, Petrone N, Hone J 2014 Nat. Commun. 5 5678 Google Scholar
[74]	Li H, Contryman A W, Qian X F, Ardakani S M, Gong Y J, Wang X L, Weisse J M, Lee C H, Zhao J H, Ajayan P M, Li J, Manoharan H C, Zheng X L 2015 Nat. Commun. 6 7381 Google Scholar
[75]	Castellanos-Gomez A, Roldan R, Cappelluti E, Buscema M, Guinea F, van der Zant H S J, Steele G A 2013 Nano Lett. 13 5361 Google Scholar
[76]	Amorim B, Cortijo A, de Juan F, Grushine A G, Guinea F, Gutierrez-Rubio A, Ochoa H, Parente V, Roldan R, San-Jose P, Schiefele J, Sturla M, Vozmediano M A H 2016 Phys. Rep. 617 1 Google Scholar
[77]	Wei B, Zheng K, Ji Y, Zhang Y, Zhang Z, Han X 2012 Nano Lett. 12 4595 Google Scholar
[78]	Signorello G, Karg S, Björk M T, Gotsmann B, Riel H 2013 Nano Lett. 13 917 Google Scholar
[79]	Conley H J, Wang B, Ziegler J I, Haglund R F, Pantelides S T, Bolotin K I 2013 Nano Lett. 13 3626 Google Scholar
[80]	Lloyd D, Liu X, Christopher J W, Cantley L, Wadehra A, Kim B L, Goldberg B B, Swan A K, Bunch J S 2016 Nano Lett. 16 5836 Google Scholar
[81]	Boztug C, Sanchez-Perez J R, Cavallo F, Lagally M G, Paiella R 2014 ACS Nano 8 3136 Google Scholar
[82]	Petykiewicz J, Nam D, Sukhdeo D S, Gupta S, Buckley S, Piggott A Y, Vuckovic J, Saraswat K C 2016 Nano Lett. 16 2168 Google Scholar
[83]	Pilon F T A, Lyasota A, Niquet Y M, Reboud V, Calvo V, Pauc N, Widiez J, Bonzon C, Hartmann J M, Chelnokov A, Faist J, Sigg H 2019 Nat. Commun. 10 2724 Google Scholar
[84]	Sukhdeo D S, Nam D, Kang J H, Brongersma M L, Saraswat K C 2014 Photonics Res. 2 8 Google Scholar
[85]	江佳霖 2019 博士学位论文 (武汉: 华中科技大学) Jiang J L 2019 Ph. D. Dissertation (Wuhan: Huazhong University of Science and Technology)(in Chinese)
[86]	Sánchez-Pérez J R, Boztug C, Chen F, Sudradjat F F, Paskiewicz D M, Jacobson R B, Lagally M G, Paiella R 2011 PANS 108 18893 Google Scholar
[87]	Süess M J, Geiger R, Minamisawa R A, Schiefler G, Frigerio J, Chrastina D, Isella G, Spolenak R, Faist J, Sigg H 2013 Nat. Photonics 7 466 Google Scholar
[88]	Bao S, Kim D, Onwukaeme C, Gupta S, Saraswat K, Lee K H, Kim Y, Min D, Jung Y, Qiu H D, Wang H, Fitzgerald E A, Tan C S, Nam D 2017 Nat. Commun. 8 1845 Google Scholar
[89]	Wang Y, Chen Y, Li H, Li X, Chen H, Su H, Lin Y, Xu Y, Song G, Feng X 2016 ACS Nano 10 8199 Google Scholar
[90]	Jiang H, Khang D Y, Song J, Sun Y, Huang Y, Rogers J A 2007 PANS 104 15607 Google Scholar
[91]	Song J, Jiang H, Huang Y, Rogers J A 2009 J. Vac. Sci. Technol. A 27 1107 Google Scholar
[92]	Zhang J, Xu Y, Jiang Y, Bai L, Chen H, Li J, Wang L, Wu W, Song G 2018 Nanoscale 10 12657 Google Scholar

[1]	Shang Shuai-Peng, Lu Yong-Jun, Wang Feng-Hui. Surface effects on buckling of nanowire electrode. Acta Physica Sinica, 2022, 71(3): 033101. doi: 10.7498/aps.71.20211864
[2]	Liao Jian-Hong, Zeng Qun, Yuan Mao-Hui. Competition between different nonlinear optical effects of GaN-based thin-film semiconductors. Acta Physica Sinica, 2018, 67(23): 236101. doi: 10.7498/aps.67.20181347
[3]	Cao Xing-Zhong, Song Li-Gang, Jin Shuo-Xue, Zhang Ren-Gang, Wang Bao-Yi, Wei Long. Advances in applications of positron annihilation spectroscopy to investigating semiconductor microstructures. Acta Physica Sinica, 2017, 66(2): 027801. doi: 10.7498/aps.66.027801
[4]	Wu Zhi-Zheng, Yu Kun, Guo Zhi-Wei, Li Yun-Hui, Jiang Hai-Tao. Electronic Tamm states of metamaterial-like semiconductor composite structures. Acta Physica Sinica, 2015, 64(10): 107302. doi: 10.7498/aps.64.107302
[5]	Sun Zheng, Chen Shao-Ping, Yang Jiang-Feng, Meng Qing-Sen, Cui Jiao-Lin. Thermoelectric properties of chalcopyrite Cu3Ga5Te9 with Sb non-isoelectronic substitution for Cu and Te. Acta Physica Sinica, 2014, 63(5): 057201. doi: 10.7498/aps.63.057201
[6]	Feng Xue, Lu Bing-Wei, Wu Jian, Lin Yuan, Song Ji-Zhou, Song Guo-Feng, Huang Yong-Gang. Review on stretchable and flexible inorganic electronics. Acta Physica Sinica, 2014, 63(1): 014201. doi: 10.7498/aps.63.014201
[7]	Xie Jian-Feng, Cao Jue-Xian. Modulation of the band structure of layered BN film with stain. Acta Physica Sinica, 2013, 62(1): 017302. doi: 10.7498/aps.62.017302
[8]	Chen Dong, Xiao He-Yang, Jia Wei, Chen Hong, Zhou He-Gen, Li Yi, Ding Kai-Ning, Zhang Yong-Fan. Electronic structures and optical properties of AAl2C4 (A=Zn, Cd, Hg; C=S, Se) semiconductors. Acta Physica Sinica, 2012, 61(12): 127103. doi: 10.7498/aps.61.127103
[9]	Dong Quan-Li, Zhang Jie, Yang Jie, Jiang Zhao-Tan. Electronic energy band structures of carbon nanotubeswith spin-orbit coupling interaction. Acta Physica Sinica, 2011, 60(7): 075202. doi: 10.7498/aps.60.075202
[10]	Ma Jian-Li, Zhang He-Ming, Song Jian-Jun, Wang Guan-Yu, Wang Xiao-Yan. Energy band structure of uniaxial-strained silicon material on the (001) surface arbitrary orientation. Acta Physica Sinica, 2011, 60(2): 027101. doi: 10.7498/aps.60.027101
[11]	Liu Pei-Sheng. Analyses of buckling failure mode for porous materials under compression. Acta Physica Sinica, 2010, 59(12): 8801-8806. doi: 10.7498/aps.59.8801
[12]	Wang Ru-Zhi, Yuan Rui-Yang, Song Xue-Mei, Wei Jin-Sheng, Yan Hui. Magnetic-electric controllable spin transport in semiconductors superlattic. Acta Physica Sinica, 2009, 58(5): 3437-3442. doi: 10.7498/aps.58.3437
[13]	Yao Xiao-Hu, Han Qiang. Torsional buckling of a double-walled carbon nanotube under the action of coupled thermo-mechanical load. Acta Physica Sinica, 2008, 57(8): 5056-5062. doi: 10.7498/aps.57.5056
[14]	Xin Hao, Han Qiang, Yao Xiao-Hu. Influences of atom vacancies on buckling properties of armchair single-walled carbon nanotubes shown by molecular dynamics simulation. Acta Physica Sinica, 2008, 57(7): 4391-4396. doi: 10.7498/aps.57.4391
[15]	Yao Fei, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. Band gap Narrowing in heavily B doped Si1－xGex strained layers. Acta Physica Sinica, 2007, 56(11): 6654-6659. doi: 10.7498/aps.56.6654
[16]	Wang Lei, Zhang Hong-Wu, Wang Jin-Bao. Influence of van der Waals force on the buckling of double-walled carbon nanotubes. Acta Physica Sinica, 2007, 56(3): 1506-1513. doi: 10.7498/aps.56.1506
[17]	Zhou Wang－Min, Wang Chong－Yu. The strain distribution of lowdimensional semiconductor materials. Acta Physica Sinica, 2004, 53(12): 4308-4313. doi: 10.7498/aps.53.4308
[18]	Wang Yu, Wang Xiu-Xi, Ni Xiang-Gui, Wu Heng-An. Buckling behavior of carbon nanotube under compression. Acta Physica Sinica, 2003, 52(12): 3120-3124. doi: 10.7498/aps.52.3120
[19]	XU ZHI-ZHONG. THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATES. Acta Physica Sinica, 1996, 45(1): 126-132. doi: 10.7498/aps.45.126
[20]	Xu Zhi-Zhong. . Acta Physica Sinica, 1995, 44(7): 1141-1147. doi: 10.7498/aps.44.1141

Catalog

Vol. 70, Issue 16 - 2021-08-20

Metrics

Abstract views: 10051
PDF Downloads: 302
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板