Atomic layer deposition of AlGaN alloy and its application in quantum dot sensitized solar cells

Liu Heng; Li Ye; Du Meng-Chao; Qiu Peng; He Ying-Feng; Song Yi-Meng; Wei Hui-Yun; Zhu Xiao-Li; Tian Feng; Peng Ming-Zeng; Zheng Xin-He

doi:10.7498/aps.72.20230113

Abstract

The role of plasma-enhanced atomic layer deposition growth of AlGaN ternary alloys on c-planar sapphire substrates and the preparation of quantum dot-sensitized solar cells are explored in this work. The interface between the film and the substrate as well as the band gap of AlGaN ternary alloys during atomic layer deposition is dependent on Al component. At high Al fraction, there appears a good interface between the AlGaN alloy film and the substrate, however, the interface becomes rough when the Al fraction is reduced. The AlGaN alloy prepared by atomic layer deposition has a high band gap, which is related to the oxygen content within the film. Subsequently, CdSe/AlGaN/ZnS and CdSe/ZnS/AlGaN structured cells are prepared and analyzed for quantum dot solar cells from AlGaN films with an AlN/GaN cycle ratio of 1∶1. It is found that AlGaN can modify and passivate quantum dots and TiO₂, which can wrap and protect the structure of TiO₂ and CdSe quantum dot, thus avoiding the recombination of photo-generated carriers. This modification effect is also reflected in the improvement of open-circuit voltage, short-circuit current, filling factor and photovoltaic conversion efficiency of quantum dot solar cells. These factors are discussed in this work, trying to modify carrier transport characteristics of AlGaN films prepared by atomic layer deposition.

Keywords:

AlGaN /
plasma enhanced atomic layer deposition /
CdSe quantum dots /
solar cell

Authors and contacts

1.
Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
2.
School of Electronic Information and Electrical Engineering, Huizhou University, Huizhou 516007, China

Corresponding author: Zheng Xin-He, xinhezheng@ustb.edu.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFA0703700), the National Natural Science Foundation of China (Grant No. 52002021), and the Fundamental Research Funds for the Central Universities of China (Grant No. FRF-IDRY-20-037).

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References

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Cited By

图 1 (a) 一个完整的AlGaN-PEALD循环中AlN和GaN的生长过程; (b) 在蓝宝石上生长AlGaN的循环结构图

Figure 1. (a) Growth process of AlN and GaN in a complete AlGaN-PEALD cycle; (b) diagram of the cycle structure for growing AlGaN on sapphire.

DownLoad: Full-Size Img PowerPoint

图 2 A1G1的生长温度与薄膜厚度关系

Figure 2. Growth temperature versus film thickness for A1G1.

DownLoad: Full-Size Img PowerPoint

图 3 XRR测试图　(a) 200 ℃, 250 ℃和300 ℃下生长的A1G1; (b) 300 ℃下生长的A3G1, A1G1和A1G3

Figure 3. XRR test plots: (a) A1G1 grown at 200 ℃, 250 ℃ and 300 ℃; (b) A3G1, A1G1 and A1G3 grown at 300 ℃.

DownLoad: Full-Size Img PowerPoint

图 4 300 ℃下, 不同AlN/GaN循环比例的吸收谱图

Figure 4. Absorption spectra of different AlN/GaN cycle ratios at 300 ℃.

DownLoad: Full-Size Img PowerPoint

图 5 A3G1 (a)—(c), A1G1 (d)—(f), A1G3 (g)—(i)的XPS谱图　(a), (d), (g) Al 2p; (b), (e), (h) Ga 2p_3/2; (c), (f), (i) N 1s

Figure 5. XPS spectra of A3G1 (a)–(c), A1G1 (d)–(f), A1G3 (g)–(i): (a), (d), (g) Al 2p; (b), (e), (h) Ga 2p_3/2; (c), (f), (i) N 1s.

DownLoad: Full-Size Img PowerPoint

图 6 CdSe QDs的HRTEM (a)和稳态PL图(b)

Figure 6. HRTEM (a) and steady-state PL maps (b) of CdSe QDs.

DownLoad: Full-Size Img PowerPoint

图 7 量子点太阳能电池示意图　(a) AlGaN/ZnS; (b) ZnS/AlGaN

Figure 7. Schematic diagram of QDSCs: (a) AlGaN/ZnS; (b) ZnS/AlGaN.

DownLoad: Full-Size Img PowerPoint

图 8 两种结构下沉积不同周期AlGaN薄膜QDSCs的J-V曲线　(a) 5 cycles; (b) 20 cycles; (c) 30 cycles. (d) 5, 20, 30 cycles的Nyquist曲线

Figure 8. J-V curves of QDSCs of AlGaN thin films with different cycles deposited under two structures: (a) 5 cycles; (b) 20 cycles; (c) 30 cycles. (d) Nyquist curves for 5, 20 and 30 cycles.

DownLoad: Full-Size Img PowerPoint

表 1 不同循环比例生长的AlGaN薄膜的元素组成

Table 1. Elemental composition of AlGaN films grown with different cyclic ratios.

Samples	Al/%	Ga/%	N/%	O/%	C/%
A3G1	37.97	4.21	16.03	38.56	3.32
A1G1	31.89	7.28	20.83	35.18	4.82
A1G3	21.88	17.53	27.7	29.53	3.36

DownLoad: CSV

表 2 5, 20和30 cycles AlGaN薄膜不同结构J-V测试结果

Table 2. J-V test results for different structures of 5, 20 and 30 cycles AlGaN films.

Samples	J_sc/(mA·cm^–2)	V_oc/V	FF/%	PCE/%
5AlGaN/ZnS	9.3	0.56	60.28	3.13
ZnS/5AlGaN	7.71	0.53	60.49	2.5
20AlGaN/ZnS	8.36	0.56	62.69	2.91
ZnS/20AlGaN	7.9	0.54	56.87	2.44
30AlGaN/ZnS	6.02	0.51	65.92	2.01
ZnS/30AlGaN	5.39	0.49	58.81	1.57
RC	6.81	0.51	58.59	2.02

DownLoad: CSV

表 3 5, 20和30 cycles AlGaN QDSCs的电化学阻抗谱拟合结果

Table 3. Electrochemical impedance spectrum fitting results for 5, 20 and 30 cycles AlGaN QDSCs.

Samples cycles	5	20	30
${R_{ {\text{ct-Ti} }{{\text{O} }_{\text{2} } } }}/\Omega$	18.93	32.72	41.97

DownLoad: CSV

[1]	Parkhomenko R G, De Luca O, Kolodziejczyk L, Modin E, Rudolf P, Martínez D, Cunhad L, Knez M 2021 Dalton. Trans. 50 15062 Google Scholar
[2]	Zhang X L, Liu Q Y, Liu B D, Yang W J, Li J, Niu P J, Jiang X 2017 J. Mater. Chem. C 5 4319 Google Scholar
[3]	Zhang X L, Liu B D, Liu Q Y, Yang W J M, Xiong C, Li J, Jiang X 2017 Appl. Mater. Interfaces 9 2669 Google Scholar
[4]	Deminskyi P, Rouf P, Ivanov I G, Pedersen H 2019 J. Vac. Sci. Technol A 37 020926 Google Scholar
[5]	Iliopoulos E, Moustakas T D 2002 Appl. Phys. Lett. 81 295 Google Scholar
[6]	Moon Y T, Kim D J, Park J S, Oh J T, Lee J M, Ok Y W, Kim H, Park S J 2001 Appl. Phys. Lett. 79 599 Google Scholar
[7]	Wu J 2009 J. Appl. Phys. 106 5
[8]	Angerer H, Brunner D, Freudenberg F, Ambacher O, Stutzmann M, Höpler R, Körner H J 1997 Appl. Phys. Lett. 71 1504 Google Scholar
[9]	Jain S C, Willander M, Narayan J, Overstraeten R V 2000 J. Appl. Phys. 87 965 Google Scholar
[10]	Tonisch K, Buchheim C, Niebelschütz F, Schober A, Gobsch G, Cimalla V, Goldhahn R 2008 J. Appl. Phys. 104 084516 Google Scholar
[11]	Jebalin B K, Shobha R A, Prajoon P, Kumar N M, Nirmal D 2015 Microelectron. J. 46 1387 Google Scholar
[12]	Chakroun A, Jaouad A, Bouchilaoun M, Arenas O, Soltani A, Maher H 2017 Phys. Status Solidi A 214 1600836 Google Scholar
[13]	Ruterana P, De Saint Jores G, Laügt M, Omnes F, Bellet-Amalric E 2001 Appl. Phys. Lett. 78 344 Google Scholar
[14]	Yang W X, Zhao Y K, Wu Y Y, Li X F, Xing Z W, Bian L F, Lu S L, Luo M C 2019 J. Cryst. Growth 512 213 Google Scholar
[15]	Puurunen R L 2005 J. Appl. Phys. 97 9
[16]	Ozgit C, Donmez I, Alevli M, Biyikli N 2012 J. Vac. Sci. Technol. A 30 01A124 Google Scholar
[17]	Liu S J, Zhao G, He Y F, Wei H Y, Li Y, Qiu P, Zheng X H 2019 ACS Appl. Mater. Interfaces 11 35382 Google Scholar
[18]	Liu S J, He Y F, Wei H Y, Qiu P, Song Y M, An Y L, Zheng X H 2019 Chin. Phys. B 28 026801 Google Scholar
[19]	Liu S J, Peng M Z, Hou C X, He Y F, Li M L, Zheng X H 2017 Nanoscale Res. Lett. 12 1 Google Scholar
[20]	Qiu P, Wei H Y, An Y, Wu Q, Du W, Jiang Z, Zheng X H 2019 Ceram Int. 46 5765
[21]	He Y F, Li M L, Liu S J, Wei H Y, Ye H Y, Song Y M, Zheng X H 2019 Acta Metall. Sin. (English Letters) 32 1530 Google Scholar
[22]	He Y F, Li M L, Wei H Y, Song Y, Qiu P, Peng M, Zheng X H 2021 Appl. Surf. Sci. 566 150684 Google Scholar
[23]	Song Y, He Y F, Li Y, Wei H Y, Qiu P, Huang Q, Zheng X H 2021 Cryst. Growth Des. 21 1778 Google Scholar
[24]	Song Y M, Li Y F, He Y F, Wei H Y, Qiu P, Hu X T, Su Z L, Jiang Y, Peng M Z, Zheng X H 2022 ACS Appl. Mater. Interfaces 14 16866 Google Scholar
[25]	Liu S J, Zhao G, He Y F, Li Y F, Wei H Y, Qiu P, Wang X Y, Wang X X, Cheng J D, Peng M Z, Zaera F, Zheng X H 2020 Appl. Phys. Lett. 116 211601 Google Scholar
[26]	Nepal N, Anderson V R, Hite J K, Eddy C R 2015 Thin Solid Films 589 47 Google Scholar
[27]	Rouf P, Palisaitis J, Bakhit B, O’Brien N J, Pedersen H 2021 J. Mater. Chem. C 9 13077 Google Scholar
[28]	Choi S, Ansari A S, Yun H J, Kim H, Shong B, Choi B J 2020 J. Alloy. Compd. 854 157186
[29]	Ergen O, Gilbert S M, Pham T, Turner S J, Tan M T Z, Worsley M A, Zettl A 2017 Nat. Mater. 16 522 Google Scholar
[30]	Wei H Y, Wu J, Qiu P, Liu S, He Y F, Peng MZ, Li D, Meng Q, Zaera F, Zheng X H 2019 J. Mater. Chem. A 7 25347 Google Scholar
[31]	Wei H Y, Qiu P, Peng M Z, Wu Q, Liu S, An Y, He Y F, Song Y M, Zheng X H 2019 Appl. Surf. Sci. 476 608 Google Scholar
[32]	李晔, 王茜茜, 卫会云, 仇鹏, 何荧峰, 宋祎萌, 段彰, 申诚涛, 彭铭曾, 郑新和 2021 物理学报 70 187702 Google Scholar Li Y, Wang X X, Wei H Y, Qiu P, He Y F, Song Y M, Duan Z, Shen C T, Peng M Z, Zheng X H 2021 Acta Phys. Sin. 70 187702 Google Scholar
[33]	Zhang Q, Parimoo H, Martel E, Zhao S 2022 Ecs. J. Solid State Sc. 11 116002 Google Scholar
[34]	Portillo M C, Hernández S G, Bernal Y P, Velis I M, Cab J V, Alcántara S, Alvarado J 2020 Opt. Mater. 108 110206 Google Scholar
[35]	Koo A, Budde F, Ruck B, Trodahl H, Bittar A, Preston A, Zeinert A 2006 J. Appl. Phys. 99 034312 Google Scholar
[36]	Choi Y Y, Choi K H, Kim H K 2011 J. Electrochem. Soc. 158 J349 Google Scholar
[37]	Su L X, Chen S Y, Zhao L Q, Zuo Y Q, Xie J 2020 Appl. Phys. Lett. 117 211101 Google Scholar
[38]	Sun X J, Wu C, Wang Y C, Guo D Y 2022 J. Vacuum Sci. Technol. B 40 012204 Google Scholar
[39]	Zhang J, Li S L, Xiong H, Tian W, Li Y, Fang Y Y, Wu Z H, Dai J N, Xu J T, Li X Y, Chen C Q 2014 Nanoscale Res. Lett. 9 341 Google Scholar
[40]	梁琦, 杨孟骐, 张京阳, 王如志 2022 物理学报 71 097302 Google Scholar Liang Q, Yang M Q, Zhang J Y, Wang R Z 2022 Acta Phys. Sin. 71 097302 Google Scholar
[41]	冯嘉恒, 唐立丹, 刘邦武, 夏洋, 王冰 2013 物理学报 62 117302 Google Scholar Feng J H, Tang L D, Liu B W, Xia Y, Wang B 2013 Acta Phys. Sin. 62 117302 Google Scholar
[42]	Motamedi P, Cadien K 2014 Appl. Surf. Sci. 315 104 Google Scholar
[43]	Alevli M, Haider A, Kizir S, Leghari S A, Biyikli N 2016 J. Vac. Sci. Technol. A 34 01A137 Google Scholar
[44]	Wang Q, Cheng X H, Zheng L, Shen L Y, Li J L, Zhang D L, Qian R, Yu Y H 2017 RSC Adv. 7 11745 Google Scholar
[45]	Qu L H, Peng X G 2002 J. Am. Chem. Soc. 124 2049 Google Scholar
[46]	Ren F M, Li S J, He C L 2015 Sci. China Mater. 58 490 Google Scholar

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Vol. 72, Issue 13 - 2023-07-05

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