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物理学报. 1993, 42(9): 1529-1531.
doi: 10.7498/aps.42.1529.
(110)取向的调制掺杂GaAs-AIGaAs单异质结的光致荧光谱
- 收稿日期: 1992-09-08
- 刊出日期: 2005-07-10
摘要: 测量了含碳量高低不同的(110)取向的调制掺杂GaAs-Al0.3Ga0.7As单异质结在4.2K下的光致荧光谱。在含碳量高的样品中,出现了强的沟道二维电子到受主的复合荧光峰;而在含碳量很低的样品的光致荧光中则只出现体GaAs的荧光峰。
English Abstract
PHOTOLUMINESCENCE OF (110) MODULATION-DOPED GaAs-AlGaAs HETEROSTRUCTURES
- Received Date:
08 September 1992
- Published Online:
10 July 2005
Abstract: The photoluminescence spectra of (110) modulation-doped GaAs-AlGaAs het-erostructures grown under high and low carbon background were measured at 4.2K. For high carbon specimen the luminescence peak from the recombination of 2D electrons in channel with holes bound to neutral acceptors was observed, while for low carbon specimen only lines related to bulk GaAs were observed.
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