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物理学报. 2009, 58(10): 7108-7113.
doi: 10.7498/aps.58.7108.
Ti离子注入和退火对ZnS薄膜结构和光学性质的影响
- 收稿日期: 2008-06-23
- 修回日期: 2009-02-11
- 刊出日期: 2009-10-20
English Abstract
Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films
- Received Date:
23 June 2008
- Accepted Date:
11 February 2009
- Published Online:
20 October 2009
Abstract: Ti ions were implanted into ZnS films at a dose of 1×1017ions/cm2 and energy of 80 keV by vacuum evaporation. After ion implantation， the as-implanted sample was annealed in argon ambient at different temperatures from 500 ℃ to 700 ℃. The effects of ion implantation and post-thermal annealing on the structural and optical properties of ZnS films were investigated by x-ray diffraction （XRD）， photoluminescence （PL） and optical absorption. The results showed that the diffraction peak intensity was recovered by annealing at 500 ℃. The optical absorption in the visible region increased after Ti ion implantation and the absorption edge blueshifted with the increasing annealing temperature. The PL emission intensity increased with the increasing annealing temperature.
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Keywords:
- ZnS thin films /
- ion implantation /
- x-ray diffraction /
- photoluminescence
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