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A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET

Qin Shan-Shan Zhang He-Ming Hu Hui-Yong Qu Jiang-Tao Wang Guan-Yu Xiao Qing Shu Yu

A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET

Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu
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  • Received Date:  20 July 2010
  • Accepted Date:  17 August 2010
  • Published Online:  15 May 2011

A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET

  • 1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University, Xi'an 710071, China

Abstract: An analytical model for the subthreshold current of fully depleted strained -SOI MOSFET was developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification was carried out using the 2D device simulator ISE. Good agreement was obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained Si layer strain, thickness and doping was studied. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.

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