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A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET

Qin Shan-Shan Zhang He-Ming Hu Hui-Yong Qu Jiang-Tao Wang Guan-Yu Xiao Qing Shu Yu

A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET

Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu
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  • An analytical model for the subthreshold current of fully depleted strained -SOI MOSFET was developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification was carried out using the 2D device simulator ISE. Good agreement was obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained Si layer strain, thickness and doping was studied. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.
    • Funds:
    [1]

    Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A 2002 IEDM Tech. Dig. 20 23

    [2]

    Hu H Y, Zhang H M, Dai X Y, Lü Y 2004 Chin. Phys. 12 295

    [3]

    Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339

    [4]

    Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 物理学报 56 3504]

    [5]

    Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. on Electron Devices 52 2207

    [6]

    Lauer I, Langdo T A, Cheng Z Y, Fiorenza J G, Braithwaite G, Currie M T, Leitz C W, Lochtefeld A, Badawi H, Bulsara M T, Somerville M, Antoniadis D A 2004 IEEE EDL 25 83

    [7]

    Chen C L, Langdo T A, Chen C K, Fiorenza J G, Wyatt P W, Currie M T, Leitz C W, Braithwaite G, Fritze M, Lambert R, Yost D R, Cheng Z, Lochtefeld A, Keast C K 2003 IEDM Tech. Dig. 311

    [8]

    Haizhou Y, Hobart K D, Peterson R L, Kub F J, Shieh S R, Duffy T S, Sturm J C 2003 IEDM Tech. Dig. 321

    [9]

    Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志峰、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 物理学报 58 4948]

    [10]

    S. M. SZ, Kwok K. NG 2008 Physics of Semiconductor Devices (Third Editon) (Xi'an:Xi'an Jiong University Press) p240 (in Chinese) [施 敏、伍国珏著、耿莉、张瑞智译 2008 半导体器件物理(第三版)(西安:西安交通大学出版社)第240页]

    [11]

    Lim J S, Thompson S E, Fossum J G 2004 IEEE EDL 25 731

    [12]

    Zhang W, Fossum J G 2005 IEEE ED 52 263

    [13]

    Currie M T, Leitz C W, Langdo T A, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 J. Vac. Sci. Techno B 19 2268

  • [1]

    Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A 2002 IEDM Tech. Dig. 20 23

    [2]

    Hu H Y, Zhang H M, Dai X Y, Lü Y 2004 Chin. Phys. 12 295

    [3]

    Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339

    [4]

    Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 物理学报 56 3504]

    [5]

    Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. on Electron Devices 52 2207

    [6]

    Lauer I, Langdo T A, Cheng Z Y, Fiorenza J G, Braithwaite G, Currie M T, Leitz C W, Lochtefeld A, Badawi H, Bulsara M T, Somerville M, Antoniadis D A 2004 IEEE EDL 25 83

    [7]

    Chen C L, Langdo T A, Chen C K, Fiorenza J G, Wyatt P W, Currie M T, Leitz C W, Braithwaite G, Fritze M, Lambert R, Yost D R, Cheng Z, Lochtefeld A, Keast C K 2003 IEDM Tech. Dig. 311

    [8]

    Haizhou Y, Hobart K D, Peterson R L, Kub F J, Shieh S R, Duffy T S, Sturm J C 2003 IEDM Tech. Dig. 321

    [9]

    Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志峰、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 物理学报 58 4948]

    [10]

    S. M. SZ, Kwok K. NG 2008 Physics of Semiconductor Devices (Third Editon) (Xi'an:Xi'an Jiong University Press) p240 (in Chinese) [施 敏、伍国珏著、耿莉、张瑞智译 2008 半导体器件物理(第三版)(西安:西安交通大学出版社)第240页]

    [11]

    Lim J S, Thompson S E, Fossum J G 2004 IEEE EDL 25 731

    [12]

    Zhang W, Fossum J G 2005 IEEE ED 52 263

    [13]

    Currie M T, Leitz C W, Langdo T A, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 J. Vac. Sci. Techno B 19 2268

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    [7] Cao Lei, Liu Hong-Xia, Wang Guan-Yu. Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica, 2012, 61(1): 017105. doi: 10.7498/aps.61.017105
    [8] Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue. Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor. Acta Physica Sinica, 2010, 59(12): 8877-8882. doi: 10.7498/aps.59.8877
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    [10] Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi. Band structure of strained Si/(111)Si1-xGex: a first principles investigation. Acta Physica Sinica, 2008, 57(9): 5918-5922. doi: 10.7498/aps.57.5918
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  • Received Date:  20 July 2010
  • Accepted Date:  17 August 2010
  • Published Online:  15 May 2011

A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET

  • 1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University, Xi'an 710071, China

Abstract: An analytical model for the subthreshold current of fully depleted strained -SOI MOSFET was developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification was carried out using the 2D device simulator ISE. Good agreement was obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained Si layer strain, thickness and doping was studied. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.

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