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在这篇文章中,我们用一维晶格模型讨论了杂质中心中电声子耦合强度的问题。用场论方法严格地解得了含杂质晶格之运动方程的本征函数。由此得到了电声子耦合强度的解析表示式,它是用声子的波数k、表示相互作用范围的参量λ以及杂质参量P=γ′/γ解析地表示出来的。其中γ′和γ分别为杂质与近邻之间和一般近邻之间的力常数。对结果的分析表明,只改变质量的杂质不影响电声子耦合;导致力常数变化的杂质对电声子耦合有显著的影响。当有奇的局域模出现时,在离子晶体中它对带宽的贡献可以比带内模的贡献大很多。尤其是在离子晶体中有可能出现所谓“临界散射”,这时带内模的贡献可能变得很小,而主要的贡献几乎全来自于局域模。相反地,在非极化晶体中,局域模的贡献一般是很小的。文中最后讨论了由一维模型得到的结论对于三维晶体可能有的意义。In this paper, the effect of electron-phonon coupling on the bandwidth of impurity absorption has been considered with a one-dimensional model of crystal lattices. The eigenfunctions of lattice vibrations in the presence of an impurity have been seriously treated by using a field theoretic method. The strength of electron-phonon coupling was obtained in analytical form as a function of the wave number k of the phonon, the range of interaction λ, and the parameter P = r′/r. Here r′ and r are respectively the force constant between an impurity and its neighbours and that between the normal neighbouring atoms. The results show that an impurity which causes the force costant to change has a considerable effect on the electron-phonon coupling. Under certain conditions the contribution of an antisymmetric localized mode in an ionic crystal may be much larger than the total contributions of intra-band modes. Especially, it is possible for the so called "critical scattering" to appear in ion crystals. In that case the contribution of intra-band modes may become very small and contribution comes almost entirely from the localized mode. Conversely, in a nonpolar crystal the contribution of the localized mode is generally negligible. The possible meaning of the above result in the problem of three-dimensional crystals was discussed in the final part of this article.
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