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注氮GaAs中的深能级及其对自由载流子的补偿

陈开茅 金泗轩 贾勇强 邱素娟 吕云安 何梅芬 刘鸿飞

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注氮GaAs中的深能级及其对自由载流子的补偿

陈开茅, 金泗轩, 贾勇强, 邱素娟, 吕云安, 何梅芬, 刘鸿飞

DEEP LEVELS AND FREE-CARRIER COMPENSATION IN NITROGEN-IMPLANTED GaAs

CHEN KAI-MAO, JIN SI-XUAN, JIA YONG-QIANG, QIU SU-JUAN, LU YU-NAN, HE MEI-FEN, LIU HONG-FEI
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  • 详细研究了注氮n型GaAs中深的和浅的杂质缺陷的电学性质。深能级瞬态谱(DLTS)技术测量表明,能量为140keV和剂量为1×1013cm-2的氮离子注入并经800℃退火30min的GaAs中存在四个电子陷阱,E1(0.111),E2(0.234),E3(0.415),E4(0.669)和一个空穴陷阱H(0.545),而在能量为20keV和剂量为5×1014
    This work presents a detailed study of deep and shallow level defects in nitrogen implanted n-type GaAs. Deep-level transient spectroscopy (DLTS) measurements show four electron traps and one hole trap in 140 keV nitrogen implanted GaAs after a dose of 1×1013cm-2 and a thermal annealing at 800℃ for 30 min: E1(0.111) ,E2(0.234) ,E3(0.415) ,E4(0.669) ,and H(0.545). Meanwhile,only E4 and H(0.545) defects are observed in 10 keV nitrogen-implanted GaAs after a dose of 5×1014cm-2 and the same annealing treatment. It oncluded that E2 and E3 correspond to the damages due to the high-energy implantation, E4 may be complex of intrinsic defect and implantation damage, H(0.545)is a nitrogen-related deep-level and may contribute to the free-carrier compensation in the nitrogen-implanted n-type GaAs.
    • 基金项目: 国家自然科学基金
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  • 文章访问数:  5812
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  • 被引次数: 0
出版历程
  • 收稿日期:  1994-12-08
  • 刊出日期:  1996-03-20

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