搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

ZnS型薄膜电致发光器件输运过程的解析能带模拟

赵 辉 何大伟 王永生 徐叙瑢

引用本文:
Citation:

ZnS型薄膜电致发光器件输运过程的解析能带模拟

赵 辉, 何大伟, 王永生, 徐叙瑢

ANALYTICAL BAND SIMULATION OF ELECTRIC TRANSPORT IN ZnS THIN FILM ELECTROLUMINES CENT DEVICES

ZHAO HUI, HE DA-WEI, WANG YONG-SHENG, XU XU-RONG
PDF
导出引用
  • 采用解析能带模型对ZnS型薄膜电致发光器件的输运过程进行了Monte Carlo模拟.利用分段的多项式拟合了ZnS的实际导带结构,计算了能态密度和散射速率.以这些结果为基础,模拟了ZnS中的电子输运过程.通过比较,这一模型既具有非抛物多能谷能带模型运算速度快、使 用方便的优势,又具有与采用全导带模型相近的计算精度.进而,讨论了能带模型对模拟结 果的影响,发现色散关系与能态密度均对模拟结果有较大影响.
    The band structure of ZnS calculated from empirical pseudopotential method is fitted by use of polynomials. The density of state and scattering rates are also calculated from these polynomials. Based on these results, electric transport process in ZnS-type thin film electroluminescent devices is simulated through Monte Carlo method. By comparison with other methods, the calculation based on this m odel is as fast as nonparabolic model and as accurate as full band model. Furthe rmore, the influence of band model on simulation result is also investigated. We show that the dispersion relations and density of state are all important in si mulation.
    • 基金项目: 国家自然科学基金(批准号:59982001)资助的课题.
计量
  • 文章访问数:  3509
  • PDF下载量:  202
  • 被引次数: 0
出版历程
  • 收稿日期:  1999-10-31
  • 修回日期:  2000-03-06
  • 刊出日期:  2000-09-20

/

返回文章
返回