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BaO半导体薄膜在外加垂直表面电场作用下的近紫外光吸收增强现象研究

张琦锋 侯士敏 邵庆益 刘 盛 刘惟敏 薛增泉 吴锦雷

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BaO半导体薄膜在外加垂直表面电场作用下的近紫外光吸收增强现象研究

张琦锋, 侯士敏, 邵庆益, 刘 盛, 刘惟敏, 薛增泉, 吴锦雷

STUDY OF ENHANCED PHOTOABSORPTION OF BaO THIN FILMS IN THE NEAR-ULTRAVIOLET BAND WITH APPLIED VERTICAL ELECTRIC FIELD ON THE SURFACE

ZHANG QI-FENG, HOU SHI-MIN, SHAO QING-YI, LIU SHENG, LIU WEI-MIN, XUE ZENG-QUAN, WU JIN-LEI
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  • 通过对真空蒸发沉积制备的BaO半导体薄膜在外加垂直表面电场作用下光吸收特性的测试, 实验上观察到BaO薄膜在近紫外波段的光吸收随电场强度的增加而明显增强.理论分析表明, BaO半导体薄膜在外加垂直表面电场作用下发生能带倾斜,价带电子隧穿带间位垒而在带隙 中出现的概率增加,近紫外波段光吸收增强是光子协助隧道穿越的结果.不同能量光子激发 下电场作用引起的BaO薄膜光吸收增强现象是夫兰茨-凯尔迪什(Franz-Keldysh)效应和斯塔 克(Stark)效应在金属氧化物半导体材料上的体现.
    The optical absorption properties of BaO semiconductor thin films deposited by v acuum evaporation were measured when a vertical electric field was applied on th e surface of the thin films.Enhanced absorption in the near-ultraviolet band was observed.The absorption was increased with the increased intensity of applied e lectric field.Theoretical analysis indicates that the energy-band edges of BaO s emiconductor become bent on the application of electric field,and there is an in creased probability for electrons in the valence band to tunnel through the forb idden gap according to the quantum-mechanics.As a result,it becomes possible for the photons with energy less than Eg to be absorbed by the electrons ,and which leads to the enhanced photoabsorption of BaO thin films in the near-u ltraviolet band.Franz-Keldysh effect and Stark effect were used to explain the e lectroabsorption spectrum when metal oxide semiconductor was excited by the phot ons with energy less or more than Eg.
    • 基金项目: 国家自然科学基金(批准号:69681001)和北京市自然科学基金(批准号:2992019)资助的课题.
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  • 文章访问数:  4250
  • PDF下载量:  726
  • 被引次数: 0
出版历程
  • 收稿日期:  2000-01-06
  • 修回日期:  2000-03-07
  • 刊出日期:  2000-05-05

BaO半导体薄膜在外加垂直表面电场作用下的近紫外光吸收增强现象研究

  • 1. 北京大学电子学系,北京 100871
    基金项目: 

    国家自然科学基金(批准号:69681001)和北京市自然科学基金(批准号:2992019)资助的课题.

摘要: 通过对真空蒸发沉积制备的BaO半导体薄膜在外加垂直表面电场作用下光吸收特性的测试, 实验上观察到BaO薄膜在近紫外波段的光吸收随电场强度的增加而明显增强.理论分析表明, BaO半导体薄膜在外加垂直表面电场作用下发生能带倾斜,价带电子隧穿带间位垒而在带隙 中出现的概率增加,近紫外波段光吸收增强是光子协助隧道穿越的结果.不同能量光子激发 下电场作用引起的BaO薄膜光吸收增强现象是夫兰茨-凯尔迪什(Franz-Keldysh)效应和斯塔 克(Stark)效应在金属氧化物半导体材料上的体现.

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