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Ni全硅化金属栅功函数调节技术研究

周华杰 徐秋霞

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Ni全硅化金属栅功函数调节技术研究

周华杰, 徐秋霞

Ni-FUSI metal gate work function modulation technology

Zhou Hua-Jie, Xu Qiu-Xia
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  • 通过制备栅内不同掺杂条件的Ni全硅化金属栅电容并分析其C-V和Vfb-EOT特性发现,Ga和Yb较常规的杂质而言具有更好的栅功函数调节能力,能够分别将Ni全硅化金属栅电极功函数调节到价带顶和导带底附近,满足高性能体硅平面互补金属氧化物半导体(CMOS)器件对栅电极功函数的要求. 同时根据电偶极子(Dipole)理论分析了Ga和Yb具有较强栅功函数调节能力的原因. 另外,研究发现栅内掺入Ga或Yb杂质后的Ni全硅化金属栅电容的电容值变大、栅极泄漏电流反而变小,通过对C-V和栅极泄漏电流特性进行分析,对这一现象进行了解释.
    Through fabricating Ni-FUSI metal gate capacitors and analyzing their C-V and Vfb-EOT characteristics, it is found that Ga or Yb has more favorable modulation ability than conventional dopants. The work function of Ni-FUSI metal gate is modulated close to the top of valince band and the bottom of conduction band, which meets the requirement of high performance CMOS devices. The high modulation abilities of Ga and Yb are explained by dipole theory. Moreover, it is found that the capacitance value of Ni-FUSI metal gate capacitor increases after incorporating Ga or Yb into Ni-FUSI metal gate, but the gate leakage current decreases. And the detailed explanation for the above phenomena is also included in this article by analyzing C-V and gate leakage current characteristics.
    • 基金项目: 国家02科技重大专项项目(批准号:2009ZX02035-06)资助的课题.
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  • [1]

    Yagishita A, Saito T, Nakajima K, Inumiya S, Akasaka Y, Ozawa Y, Hieda K, Tsunashima Y, Suguro K, Arikado T, Okumura K 2000 IEEE Transactions on electron devices 47 1028

    [2]

    Lu Q, Yee Chia Yeo, Ranade P, Takeuchi H, Tsu-Jae King, Hu C M, Song S C, Luan H F, Dim-Lee Kwong 2000 Symposium on VLSl Technology p72

    [3]
    [4]
    [5]

    Polishchuk I, Ranade P, King T J, Hu C M 2002 IEEE electron device letters 23 200

    [6]

    Ha D, Takeuchi H, Choi Y K, King T J 2004 IEEE transactions on electron devices 51 1989

    [7]
    [8]

    Tavel B, Skotnicki T, Pares G, Carriere N, Rivoire M, Leverd F, Julien C, Torres J, Pantel R 2001 International Electron Devices Meeting 825

    [9]
    [10]

    Mayuzumi S, Yamakawa S, Tateshita Y, Hirano T, Nakata M, Yamaguchi S, Tai K, Wakabayashi H, Tsukamoto M, Nagashima N 2009 IEEE Trans. Electron Devices 56 620

    [11]
    [12]
    [13]

    Chen Y, Chen K, Yeh W, Yuan J, Yeh F 2010 IEEE Transactions on Device and Materials Reliability Issue: 99 1

    [14]

    Zhou H J, Xu Q X 2007 Chinese Journal of Semiconductors 28 1532

    [15]
    [16]

    Shan X N, Huang R, Li Y, Cai Y M 2007 Acta Physica Sinica 56 4943 (in Chinese) [单晓楠、 黄 如、 李 炎、 蔡一茂 2007 物理学报 56 4943]

    [17]
    [18]
    [19]

    Veloso A, Yu H Y, Lauwers A, Chang S Z, Adelmann C, Onsia B, Demand M, Brus S, Vrancken C, Singanamalla R, Lehnen P, Kittl J, Kauerauf T, Vos R, O'Sullivan B J, Van Elshocht S, Mitsuhashi R, Whittemore G, Yin K M, Niwa M, Hoffmann T, Absil P, Jurczak M, Biesemans S 2007 Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European Munich 1113 Sept. 2007 p195

    [20]
    [21]

    Kedzierski J, Nowak E, Kanarsky T, Zhang Y, Boyd D, Carruthers R, Cabral C, Amos R, Lavoie C, Roy R, Newbury J, Sullivan E, Benedict J, Saunders P, Wong K, Canaperi D, Krishnan M, Lee K-L, Rainey B A, Fried D, Cottrell P, Wong H S P, leong M, Haensch W 2002 International Electron Devices Meeting p247

    [22]
    [23]

    Maszara W P 2005 J. Electrochem. Soc. 152 550

    [24]

    Qin M, Poon V M C, Ho S C H 2001 J. Electrochem. Soc. 148 271

    [25]
    [26]
    [27]

    Cabral C, Jr, Kedzierski J, Linder B, Zafar S, Narayanan Y, Fang S, Steegen A, Kozlowski P, Carruthers R, Jammy R 2004 Symposium on VLSI 184

    [28]
    [29]

    Xuan P Q, Bokor J 2003 IEEE Electron Device Letters 24 634

    [30]

    Sim J H, Wen H C, Lu lP, Kwong D L 2003 IEEE Electron Device Letters 24 631

    [31]
    [32]
    [33]

    Yu D S, Wu C H, Huang C H, Chin A, ChenW J, Zhu C X, Li M F, Kwong D L 2003 IEEE Electron Device Lett. 24 739

    [34]

    Kedzierski J, Boyd D, Ronsheim P, Zafar S, Newbury J, Ott J, Cabral C J, leong M, Haensch W 2003 International Electron Devices Meeting p315

    [35]
    [36]
    [37]

    Krivokapic Z, Maszara W, Achutan K, King P, Gray l, Sidorow M, Zhao E, Zhang J, Chan J, Marathe A, Lin M R 2002 International Electron Devices Meeting p271

    [38]
    [39]

    Yu H Y, Chen J D, Li M F, Lee S J, Kwong D L, van Dal M, Kittl JA, Lauwers A, Augendre E, Kubicek S, Zhao C, Bender H, Brijs B, Geenen L, Benedetti A, Absil P, Jurczak M, Biesemans S 2005 International Electron Devices Meeting p630

    [40]
    [41]

    Lin C T, Ramin M, Pas M, Wise R, Fang Y K, Hsu C H, Huang Y T, Cheng L W, Ma M 2007 IEEE Electron Device Letters 28 831

    [42]

    Tsuchiya Y, Yoshiki M, Koyama M, Kinoshita A, Koga J 2005 International Electron Devices Meeting p622

    [43]
    [44]
    [45]

    Pourtois G, Lauwers A, Kittl J, Pantisano L, Sore B, De Gendt S, Magnus W, Heyns M, Maex K 2005 Microelectronic Engineering 80 272

    [46]
    [47]

    Eu-Jin Lim A, Fang W W, Liu F Y, Lee R T P, Samudra G S, Kwong D L, Yeo Y C 2007 International Semiconductor Device Research Symposium p1

    [48]

    Sivasubramani P, Boscke T S, Huang J, Young C D, Kirsch P D, Krishnan S A, Quevedo-Lopez M A, Govindarajan S, Ju B S, Harris H R, Lichtenwalner D J, Jur J S, Kingon A I, Kim J, Gnade B E, Wallace R M, Bersuker G, Lee B H, Jammy R 2007 IEEE Symposium on VLSI Technology p68

    [49]
    [50]
    [51]

    Lim A E J, Lee R T P, Samudra G S, Kwong DL, Yeo Y C 2008 IEEE Transactions on Electron Devices 55 2370

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出版历程
  • 收稿日期:  2010-12-17
  • 修回日期:  2011-01-10
  • 刊出日期:  2011-05-05

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