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异质界面对Ca(Mg1/3Nb2/3)O3/CaTiO3叠层薄膜结构和介电性能的影响

周静 刘存金 李儒 陈文

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异质界面对Ca(Mg1/3Nb2/3)O3/CaTiO3叠层薄膜结构和介电性能的影响

周静, 刘存金, 李儒, 陈文

Effects of heterogeneous interfaces on microstructure and dielectric properties of Ca(Mg1/3Nb2/3)O3/CaTiO3 multilayered thin films

Zhou Jing, Liu Cun-Jin, Li Ru, Chen Wen
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  • 采用异质叠层方式制备出一定厚度的Ca(Mg1/3Nb2/3)O3/CaTiO3(CMN/CT)叠层薄膜,研究了异质界面对薄膜结构、微观形貌及介电性能的影响及其规律.根据实验测试结果,提出CMN/CT叠层薄膜的模拟等效电路,建立介电常数和介电损耗的理论计算公式.结果表明:CMN/CT异质叠层薄膜具有完全正交钙钛矿结构,结构致密,厚度均匀,薄膜中存在独立的CMN和CT相.异质界面处存在过渡层,随着薄膜中异质界面个数增加,介电常数增大,介电损耗减小.减小界面过渡层的厚度,有利于提高CMN/CT叠层薄膜的介电性能.
    The effects of heterogeneous interfaces on the microstructure, the morphology and the dielectric properties of Ca(Mg1/3Nb2/3)O3/CaTiO3(CMN/CT) multilayered(ML) thin film prepared in the layer-by-layer mode with a certain thickness are investigated. According to the experimental results, an equivalent circuit of CMN/CT ML thin film is simulated, and the theoretical formulae of the dielectric constant and loss of thin film are established. The results indicate that CMN/CT ML thin film, in which CT and CMN phases can exist independently, possesses a pure orthorhombic perovskite structure, dense smooth surfaces and intermediate layers at the heterogeneous interfaces, and that the dielectric constant increases and the dielectric loss decreases with the increase in the number of heterogeneous interfaces, and reducing the thickness of the interfacial transition layer is useful to improve the dielectric properties of CMN/CT multilayered thin film.
      通信作者: 陈文, chenw@whut.edu.cn
    • 基金项目: 国家自然科学基金重点项目(批准号: 50932004)、 国家自然科学基金(批准号: 51072148)、 教育部科学技术研究重大项目(批准号: 109111)、 教育部新世纪优秀人才支持计划(批准号: NCET-09-0628)和中央高校基本科研业务费专项资金 (批准号: 2010-II-009)资助的课题.
      Corresponding author: Chen Wen, chenw@whut.edu.cn
    • Funds: Project supported by the Key Program of the Natural Science Foundation of China (Grant No. 50932004), the National Natural Science Foun-dation of China (Grant No. 51072148), the Foundation for Key Program of Ministry of Education, China (Grant No. 109111), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-09-0628), amd the Fundamental Research Funds for the Central Universities of Ministry of Education of China ( Grant No. 2010-II-009).
    [1]

    Kanno I, Hayashi S, Takayama R, Hirao T 1996 Appl. Phys. Lett. 68 328

    [2]
    [3]

    Zhou J P, He H C, Shi Z, Nan C W 2006 Appl. Phys. Lett. 88 013111-1

    [4]

    Qu B D, Evstigneev M, Johnson D J, Prince R H 1998 Appl. Phys. Lett. 72 1394

    [5]
    [6]

    ONeill D, Bowman R M, Gregg J M 2000 Appl. Phys. Lett. 77 1520

    [7]
    [8]

    Schmidt R, Eerenstein W, Winiecki T, Morrison F D, Midgley P A 2007 Phys. Rev. B 75 245111-1

    [9]
    [10]

    Zheng F G, Chen J P, Li X W 2006 Acta Phys. Sin. 55 3069 (in Chinese) [郑分刚, 陈建平, 李新婉 2006 物理学报 55 3069]

    [11]
    [12]

    Erbil A, Kim Y, Gerhardt R A 1996 Phys. Rev. Lett. 77 1629

    [13]
    [14]
    [15]

    Tabata H, Tanka H, Kawai T 1994 Appl. Phys. Lett. 65 1971

    [16]

    Zheng F G, Chen J P, Li X W, Shen M R 2006 Mater. Lett. 60 2735

    [17]
    [18]

    Shen J, Zhou J, Lei Q, Ou G, Chen W 2010 J. Chin. Ceram. Soc. 38 10 (in Chinese) [沈杰, 周静, 雷琼, 欧刚, 陈文 2010 硅酸盐学报 38 10]

    [19]
    [20]
    [21]

    Dube D C, Baborowski J, Muralt P, Setter N 1999 Appl. Phys. Lett. 74 3547

    [22]

    Zhu J, Zhou J, Xu L S, Shen J, Yang X Y, Chen W 2008 Synth. React. Inorg. M. 38 168

    [23]
    [24]

    Wang S Q, Ye H Q 2006 Curr. Opin. Solid State Mater. Sci. 10 27

    [25]
    [26]

    Yoon S O, Kim D M, Shim S H, Park J K, Kang K S 2006 J. Eur. Ceram. Soc. 26 2025

    [27]
    [28]
    [29]

    Chen Y S 2005 Physics (1st Ed.) (Tianjin: Tianjin University Press) pp337339 (in Chinese) [陈宜生 2005 物理学 (第一版) (天津: 天津大学出版社) 第337---339页]

    [30]
    [31]

    Stengel M, Spaldin N A 2006 Nature 443 679

    [32]

    Campbell D S, Hayes J A 1994 Capacitive and Resistive Elec-tronic Components (Gordon and Breach, Yverdon) p122

    [33]
    [34]

    Cheng L H, Zheng L Y, Li G R, Zeng J T, Yin Q G 2008 Physica B 403 2588

    [35]
  • [1]

    Kanno I, Hayashi S, Takayama R, Hirao T 1996 Appl. Phys. Lett. 68 328

    [2]
    [3]

    Zhou J P, He H C, Shi Z, Nan C W 2006 Appl. Phys. Lett. 88 013111-1

    [4]

    Qu B D, Evstigneev M, Johnson D J, Prince R H 1998 Appl. Phys. Lett. 72 1394

    [5]
    [6]

    ONeill D, Bowman R M, Gregg J M 2000 Appl. Phys. Lett. 77 1520

    [7]
    [8]

    Schmidt R, Eerenstein W, Winiecki T, Morrison F D, Midgley P A 2007 Phys. Rev. B 75 245111-1

    [9]
    [10]

    Zheng F G, Chen J P, Li X W 2006 Acta Phys. Sin. 55 3069 (in Chinese) [郑分刚, 陈建平, 李新婉 2006 物理学报 55 3069]

    [11]
    [12]

    Erbil A, Kim Y, Gerhardt R A 1996 Phys. Rev. Lett. 77 1629

    [13]
    [14]
    [15]

    Tabata H, Tanka H, Kawai T 1994 Appl. Phys. Lett. 65 1971

    [16]

    Zheng F G, Chen J P, Li X W, Shen M R 2006 Mater. Lett. 60 2735

    [17]
    [18]

    Shen J, Zhou J, Lei Q, Ou G, Chen W 2010 J. Chin. Ceram. Soc. 38 10 (in Chinese) [沈杰, 周静, 雷琼, 欧刚, 陈文 2010 硅酸盐学报 38 10]

    [19]
    [20]
    [21]

    Dube D C, Baborowski J, Muralt P, Setter N 1999 Appl. Phys. Lett. 74 3547

    [22]

    Zhu J, Zhou J, Xu L S, Shen J, Yang X Y, Chen W 2008 Synth. React. Inorg. M. 38 168

    [23]
    [24]

    Wang S Q, Ye H Q 2006 Curr. Opin. Solid State Mater. Sci. 10 27

    [25]
    [26]

    Yoon S O, Kim D M, Shim S H, Park J K, Kang K S 2006 J. Eur. Ceram. Soc. 26 2025

    [27]
    [28]
    [29]

    Chen Y S 2005 Physics (1st Ed.) (Tianjin: Tianjin University Press) pp337339 (in Chinese) [陈宜生 2005 物理学 (第一版) (天津: 天津大学出版社) 第337---339页]

    [30]
    [31]

    Stengel M, Spaldin N A 2006 Nature 443 679

    [32]

    Campbell D S, Hayes J A 1994 Capacitive and Resistive Elec-tronic Components (Gordon and Breach, Yverdon) p122

    [33]
    [34]

    Cheng L H, Zheng L Y, Li G R, Zeng J T, Yin Q G 2008 Physica B 403 2588

    [35]
计量
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  • PDF下载量:  855
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出版历程
  • 收稿日期:  2011-05-07
  • 修回日期:  2011-07-31
  • 刊出日期:  2012-03-05

异质界面对Ca(Mg1/3Nb2/3)O3/CaTiO3叠层薄膜结构和介电性能的影响

  • 1. 武汉理工大学材料复合新技术国家重点实验室, 材料科学与工程学院, 武汉 430070
  • 通信作者: 陈文, chenw@whut.edu.cn
    基金项目: 国家自然科学基金重点项目(批准号: 50932004)、 国家自然科学基金(批准号: 51072148)、 教育部科学技术研究重大项目(批准号: 109111)、 教育部新世纪优秀人才支持计划(批准号: NCET-09-0628)和中央高校基本科研业务费专项资金 (批准号: 2010-II-009)资助的课题.

摘要: 采用异质叠层方式制备出一定厚度的Ca(Mg1/3Nb2/3)O3/CaTiO3(CMN/CT)叠层薄膜,研究了异质界面对薄膜结构、微观形貌及介电性能的影响及其规律.根据实验测试结果,提出CMN/CT叠层薄膜的模拟等效电路,建立介电常数和介电损耗的理论计算公式.结果表明:CMN/CT异质叠层薄膜具有完全正交钙钛矿结构,结构致密,厚度均匀,薄膜中存在独立的CMN和CT相.异质界面处存在过渡层,随着薄膜中异质界面个数增加,介电常数增大,介电损耗减小.减小界面过渡层的厚度,有利于提高CMN/CT叠层薄膜的介电性能.

English Abstract

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