带状注速调管多间隙扩展互作用输出腔等效电路的研究

陈姝媛; 阮存军; 王勇

doi:10.7498/aps.63.028402

摘要

带状注扩展互作用速调管（SBEIK）结合了带状注速调管与扩展互作用速调管的优势，在微波和毫米波真空电子器件中具有显著的技术潜力. 本文提出了应用于SBEIK的五间隙哑铃型扩展互作用耦合腔输出回路的等效电路模型，获得了建立复杂多间隙扩展互作用腔的等效电路理论的方法.通过推导出的理论，快速确定了五间隙扩展互作用耦合腔的工作模式、谐振频率及间隙阻抗矩阵，由间隙阻抗的频率特性曲线快速估算出各模式对应的带宽，分析研究了耦合系数k以及Qe对于多间隙腔模式频率间隔及带宽的影响. 此外，利用三维PIC 仿真软件对相应的SBEIK 五间隙输出腔高频特性进行了粒子模拟，结果表明，三维仿真获得的工作模式带宽特性与等效电路法计算结果基本一致，证明了本文所建立的等效电路方法的准确性和有效性.

关键词:

Abstract

Sheet beam extended interaction klystron, which has both the advantages of sheet beam klystron and extended-interaction klystron (EIK), has become a key technique for developing high power microwave and millimeter-wave vacuum electron devices. An equivalent circuit of the five-gap output cavity for sheet beam EIK is proposed in this paper. The mode, resonant frequency, and the cavity impedance can be calculated by using the method of equivalent circuit efficiently. The bandwidth could be estimated by the curve of cavity impedance versus frequency. The influences of coupling coefficient (k) and external Q (Qe) on mode frequency interval and bandwidth are discussed. In order to test and verify the method of equivalent circuit, the 3D-PIC simulation of output cavity is conducted. The bandwidths under different values of external Q are calculated in two ways. The results accord well with each other. It is confirmed that the method of equivalent circuit for sheet beam EIK is accurate and credible. This is useful for the design of the whole tube.

Keywords:

作者及机构信息

1.
中国科学院电子学研究所, 中国科学院高功率微波源与技术重点实验室, 北京 100190;

2.
中国科学院大学, 北京 100049

基金项目: 国家自然科学基金（批准号：61222110，60971073，61172015）资助的课题.

Authors and contacts

1.
Key Laboratory of High Power Micriwave Sources and Technology, Institute of Electronics Chinese Academy of Sciences, Beijing 100190, China;

2.
University of Chinese Academy of Sciences, Beijing 100049, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61222110, 60971073, 61172015).

参考文献

[1]	Zhang X F, Ruan C J, Luo J R, Ruan W, Zhao D 2011 Acta Phys. Sin. 60 068402 (in Chinese) [张小锋, 阮存军, 罗积润, 阮望, 赵鼎 2011 物理学报 60 068402]
[2]	Ruan C J, Wang S Z, Han Y, Li Q S 2011 Acta Phys. Sin. 60 084105 (in Chinese) [阮存军, 王树忠, 韩莹, 李庆生 2011 物理学报 60 084105]
[3]	Zhang K C, Wu Z H, Liu S G 2008 Chin. Phys. B 17 3402
[4]	Shin Y M, Barnett L R, Luhmann N C 2009 IEEE Trans. Electron Dev. 56 3196
[5]	Shin Y M, Wang J X, Barnett L R, Luhmann N C 2011 IEEE Trans. Electron Dev. 58 251
[6]	Nguyen K T, Pershing D, Wright E L, Pasour J, Calame J, Ludeking L, Rodgers J, Petillo J 2007 Proceedings of IEEE International Vacuum Electronics Conference Kitakyushu, Japan, May 15–17, 2007 p1
[7]	Nguyen K T, Pasour J, Wright E L, Pershing D, Levush B 2009 Proceedings of IEEE International Vacuum Electronics Conference Rome, Italy, April 28–30, 2009 p298
[8]	Pasour J, Nguyen K T, Wright E L, Balkcum A, Atkinson J, Cusick M, Levush B 2011 IEEE Trans. Electron Dev. 58 1791
[9]	Pasour J, Wright E, Nguyen K, Balkcum A, Pershing D, Levush B 2013 Proceedings of IEEE International Vacuum Electronics Conference Paris, France, May 21–23, 2013 p1
[10]	Wang S Z, Ma J, Wang Y, QuanY M 2010 J. Infrared Millim. Waves 29 105 (in Chinese) [王树忠, 马菁, 王勇, 全亚民 2010 红外与毫米波学报 29 105]
[11]	Zhong Y, Ding H B, Wang S Z, Ruan C J, Liang Y, Liu W X 2011 High Power Laser and Particle Beams 23 3055 (in Chinese) [钟勇, 丁海兵, 王树忠, 阮存军, 梁源, 刘文鑫 2011 强激光与粒子束 23 3055]
[12]	Chen S Y, Ruan C J, Ruan W, Wang Y, Zhang X F 2012 J. Infrared Millim. Waves 31 360 (in Chinese) [陈姝媛, 阮存军, 阮望, 王勇, 张小峰 2012 红外与毫米波学报 31 360]
[13]	Ding Y G, Lu X H 1982 J. Electron. 4 174 (in Chinese) [丁耀根, 陆校厚 1982 电子学通信 4 174]
[14]	Lin F M, Ding Y G, Zhang Z Q, Huang Y P 2004 J. Electron. Inform. Technol. 26 1480 (in Chinese) [林福民, 丁耀根, 张志强, 黄云平 2004 电子与信息学报 26 1480]

施引文献

[1]	Zhang X F, Ruan C J, Luo J R, Ruan W, Zhao D 2011 Acta Phys. Sin. 60 068402 (in Chinese) [张小锋, 阮存军, 罗积润, 阮望, 赵鼎 2011 物理学报 60 068402]
[2]	Ruan C J, Wang S Z, Han Y, Li Q S 2011 Acta Phys. Sin. 60 084105 (in Chinese) [阮存军, 王树忠, 韩莹, 李庆生 2011 物理学报 60 084105]
[3]	Zhang K C, Wu Z H, Liu S G 2008 Chin. Phys. B 17 3402
[4]	Shin Y M, Barnett L R, Luhmann N C 2009 IEEE Trans. Electron Dev. 56 3196
[5]	Shin Y M, Wang J X, Barnett L R, Luhmann N C 2011 IEEE Trans. Electron Dev. 58 251
[6]	Nguyen K T, Pershing D, Wright E L, Pasour J, Calame J, Ludeking L, Rodgers J, Petillo J 2007 Proceedings of IEEE International Vacuum Electronics Conference Kitakyushu, Japan, May 15–17, 2007 p1
[7]	Nguyen K T, Pasour J, Wright E L, Pershing D, Levush B 2009 Proceedings of IEEE International Vacuum Electronics Conference Rome, Italy, April 28–30, 2009 p298
[8]	Pasour J, Nguyen K T, Wright E L, Balkcum A, Atkinson J, Cusick M, Levush B 2011 IEEE Trans. Electron Dev. 58 1791
[9]	Pasour J, Wright E, Nguyen K, Balkcum A, Pershing D, Levush B 2013 Proceedings of IEEE International Vacuum Electronics Conference Paris, France, May 21–23, 2013 p1
[10]	Wang S Z, Ma J, Wang Y, QuanY M 2010 J. Infrared Millim. Waves 29 105 (in Chinese) [王树忠, 马菁, 王勇, 全亚民 2010 红外与毫米波学报 29 105]
[11]	Zhong Y, Ding H B, Wang S Z, Ruan C J, Liang Y, Liu W X 2011 High Power Laser and Particle Beams 23 3055 (in Chinese) [钟勇, 丁海兵, 王树忠, 阮存军, 梁源, 刘文鑫 2011 强激光与粒子束 23 3055]
[12]	Chen S Y, Ruan C J, Ruan W, Wang Y, Zhang X F 2012 J. Infrared Millim. Waves 31 360 (in Chinese) [陈姝媛, 阮存军, 阮望, 王勇, 张小峰 2012 红外与毫米波学报 31 360]
[13]	Ding Y G, Lu X H 1982 J. Electron. 4 174 (in Chinese) [丁耀根, 陆校厚 1982 电子学通信 4 174]
[14]	Lin F M, Ding Y G, Zhang Z Q, Huang Y P 2004 J. Electron. Inform. Technol. 26 1480 (in Chinese) [林福民, 丁耀根, 张志强, 黄云平 2004 电子与信息学报 26 1480]

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