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Mn掺杂对BaSn1-xMnxO3体系结构、光学和磁学性质的影响

张朋 刘亲壮 苏付海 刘强春 刘哲 宋文海 戴建明

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Mn掺杂对BaSn1-xMnxO3体系结构、光学和磁学性质的影响

张朋, 刘亲壮, 苏付海, 刘强春, 刘哲, 宋文海, 戴建明

Mn-doping effects on structural, optical and magnetic properties of BaSn1-xMnxO3

Zhang Peng, Liu Qin-Zhuang, Su Fu-Hai, Liu Qiang-Chun, Liu Zhe, Song Wen-Hai, Dai Jian-Ming
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  • 利用传统的固相反应法制备了BaSn1-xMnxO3 (x=0, 0.05, 0.10和0.13)多晶样品, 系统研究了不同Mn掺杂量对BaSnO3样品的结构、光学及磁学性质的影响. 通过X射线衍射分析表明此掺杂化合物形成了具有钙钛矿结构的单相, 在掺杂范围内没有观察到第二相出现. 漫反射光谱测试分析发现随着Mn掺杂浓度的增加, 其光学吸收边红移并逐渐平缓化, 拉曼光谱测试表明拉曼振动模式也发生了变化, 进一步证明Mn 离子取代了Sn位. 磁场下的光致发光谱测试表明样品在近红外区的发光可能与Sn离子有关. 磁学测量则显示样品在低温具有一定铁磁性, 其来源可用F心交换机制来解释.
    Polycrystalline bulk samples of BaSn1-xMnxO3 with x=0, 0.05, 0.10 and 0.13 are prepared by the conventional solid state reaction method. The effects of Mn concentration on crystal structural, optical and magnetic properties of BaSn1-xMnxO3 are investigated systematically. Powder X-ray diffraction (XRD) shows that each of these compounds presens a perovskite structure (with the space group Pm3m) without the secondary crystalline phase. The Mn ions take the Sn sites which is revealed by the XRD, diffusion reflectance spectrum (DRS) and Raman scattering. With the increase of doping level x, the optical absorption edge shifts towards higher wavelength and is smoothened gradually, meanwhile the Raman spectrum shows that Raman mode is also changed. The photoluminescence spectrum under magnetic field shows that near-infrared luminescence is probably related to Sn ions. The magnetization measurement demonstrates that Mn-doped BaSnO3 system exhibits ferromagnetism at low temperature, which can be explained by the F-center exchange (FCE) mechanism.
    • 基金项目: 国家自然科学基金青年科学基金(批准号: 11004071,11004199)资助的课题.
    • Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 11004071, 11004199).
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  • [1]

    Smith J, Welch A J E 1960 Acta Crystallogr. 13 653

    [2]
    [3]

    Cerd J, Arbiol J, Diaz R, Dezanneau G, Morante J R 2002 Mater. Lett. 56 131

    [4]
    [5]

    Shimizu Y, Fukuyama Y, Narikiyo T, Arai H, Seiyama T 1985 Chem. Lett. 9 377

    [6]

    Maekawa T, Kurosaki K, Yamanaka S 2006 J. Alloys Compd. 416 214

    [7]
    [8]

    Vivekanandan R, Kutty T R N 1988 Ceram. Int. 14 207

    [9]
    [10]
    [11]

    Moseley P T, Williams D E, Tofield B C 1988 Sens. Actuators. 14 79

    [12]
    [13]

    Shimizu Y, Shimabukuro M, Arai H, Seiyama T 1989 J. Electrochem. Soc. 136 1206

    [14]
    [15]

    Lumpe U, Gerblinger J, Meixner H 1995 Sens. Actuators B 24/25 657

    [16]

    Hodge I M, Ingram M D, West A R 1976 J. Electroanal. Chem. 74 125

    [17]
    [18]

    Wang H F, Liu Q Z, Chen F, Gao G Y, Wu W B, Chen X H 2007 J. Appl. Phys. 101 106105

    [19]
    [20]
    [21]

    Liu Q Z, Wang H F, Chen F, Wu W B 2008 J. Appl. Phys. 103 093709

    [22]
    [23]

    Liu Q Z, Dai J M , Liu Z L, Zhang X B, Zhu G P, Ding G H 2010 J. Phys. D: Appl. Phys. 43 455401

    [24]
    [25]

    Yuan Y P, Lv J, Jiang X J, Li Z S, Yu T, Zou Z G, Ye J H 2007 Appl. Phys. Lett. 91 094107

    [26]

    Borse P H, Joshi U A, Ji S M, Jang J S, Lee J S,Jeong E D, Kim H G 2007 Appl. Phys. Lett. 90 034103

    [27]
    [28]
    [29]

    Tan X Y, Chen C L, Jin K S 2011 Acta Phys. Sin. 60 107105 (in Chinese) [谭兴毅, 陈长乐, 金克新 2011 物理学报 60 107105]

    [30]

    Kuang A L, Liu X, Lu Z L, Ren S K, Liu C Y, Zhang F M,Du Y W 2005 Acta Phys. Sin. 54 2934(in Chinese) [匡安龙, 刘兴, 路忠林, 任尚坤, 刘存业, 张凤鸣, 都有为 2005 物理学报 54 2934]

    [31]
    [32]
    [33]

    Balamurugan K, E Senthil Kumar, Ramachandran B, Enkatesh S, Harish Kumar N 2012 J. Appl. Phys. 111 074107

    [34]

    Balamurugan K, Harish Kumar N, Ramachandrana B, Ramachandra Raoa M S, Arout Chelvane J, Santhosh P N 2009 Solid State Commun. 149 884

    [35]
    [36]

    Duan L B, Rao G H, Wang Y C, Yu J, Wang T 2008 J. Appl. Phys. 123 1

    [37]
    [38]

    Mizoguchi H, Woodward P M, Park C, Keszler D A 2004 J. Am. Chem. Soc. 126 9796

    [39]
    [40]

    Wiles D B,Young R A 1981 J. Appl. Crystallogr. 14 149

    [41]
    [42]

    Udawatte Ch P, Kakihana M, Yoshimura M 1998 Solid State Ionics. 108 23

    [43]
    [44]
    [45]

    Zhong W W, Liu F M, Cai L G, Ding P,Liu X Q, Li Y 2011 Acta Phys. Sin. 60 7105 (in Chinese) [钟文武, 刘发民, 蔡鲁刚, 丁芃, 柳学全, 李一 2011 物理学报 60 8102]

    [46]
    [47]

    Coey J M D, Douvalis A P, Fitzgerald C B, Venkatesan M 2004 Appl. Phys. Lett. 84 1332

计量
  • 文章访问数:  2417
  • PDF下载量:  630
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-07-23
  • 修回日期:  2012-08-15
  • 刊出日期:  2013-01-05

Mn掺杂对BaSn1-xMnxO3体系结构、光学和磁学性质的影响

  • 1. 淮北师范大学物理与电子信息学院, 淮北 235000;
  • 2. 中国科学院固体物理研究所, 材料物理重点实验室, 合肥 230031
    基金项目: 

    国家自然科学基金青年科学基金(批准号: 11004071,11004199)资助的课题.

摘要: 利用传统的固相反应法制备了BaSn1-xMnxO3 (x=0, 0.05, 0.10和0.13)多晶样品, 系统研究了不同Mn掺杂量对BaSnO3样品的结构、光学及磁学性质的影响. 通过X射线衍射分析表明此掺杂化合物形成了具有钙钛矿结构的单相, 在掺杂范围内没有观察到第二相出现. 漫反射光谱测试分析发现随着Mn掺杂浓度的增加, 其光学吸收边红移并逐渐平缓化, 拉曼光谱测试表明拉曼振动模式也发生了变化, 进一步证明Mn 离子取代了Sn位. 磁场下的光致发光谱测试表明样品在近红外区的发光可能与Sn离子有关. 磁学测量则显示样品在低温具有一定铁磁性, 其来源可用F心交换机制来解释.

English Abstract

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