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用电子束蒸发的方法制备可变光学带隙薄膜硅材料, 给出了研究结果. 介绍了一种做透过率曲线切线确定薄膜光学带隙的简易方法, 给出了制备工艺和条件, 以及各种材料的隙态分布图. 实验发现, 材料的光学带隙宽度不但与量子尺度效应有关, 而且与缺陷形成的势垒高度和宽度以及有序短程(原子串)长度有关; 给出了常规硅材料的光学带隙与原子串长度的关系. 计算表明, 随着原子串长度的加大, 势阱中的电子液面升高, 载流子受缺陷势垒的散射减弱; 在原子串长度较低的情况下, 电子液面不总是随着原子串长度升高, 而是有较大的涨落, 形成锯齿状波动.计算还发现, 在势垒宽度与原子串长度之比不变的情况下, 电子液面还与势垒高度有关.A method of preparing film silicon with variable optical gap is introduced, and the relevant results are given. An easy way to determine the film optical gap by transmittivity curve tangent is shown, and the preparation craftwork and conditions are given. The gap state distribution maps of various materials are presented. In experiment, it is found that the optical gap width of material is related not only to the quantum size effect, but also to the height and width of the barrier formed by lacuna, and to the length of short range order (atom cluster length) as well. A relationship between optical gap of silicon film and atom cluster length is given. Computations show that electron liquid level lifts in potential well with atom cluster length increasing, and the scattering of carrier is weakened by defect barrier. When the atom cluster length is shorter, the electron liquid level does not always lift with atom cluster length increasing, but fluctuates heavily and forms an indention wave. The computations also show that in the case of a constant ratio of the barrier width to the length of the atomic string, the electronic liquid level is also related to the barrier height.
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Keywords:
- film silicon /
- variable optical gap /
- gap states distribution /
- electronic liquid level fluctuating
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[2] Liu W S, Wu H M, Tsao F H, Hsu T L, Chyi J I 2012 Sol. Energy Mater. Sol. Cells 105 237
[3] Mller J, Rech B, Springer J 2004 Sol. Energy 77 917
[4] Razykov T M, Ferekides C S, Morel D, Stefanakos E, Ullal H S, Upadhyaya H M 2011 Sol. Energy 85 1580
[5] Hegedus S S, McCandless B E 2005 Sol. Energy Mat. Sol. Cells 88 75
[6] Tvrdy K, Kamat P V 2010 Comprehensive Nanoscience and Technology 4 257
[7] Poulose A C, Veeranarayanan S, Varghese S H, Yoshida Y, Maekawa T, Kumar D S 2012 Chem. Phys. Lett. 539-540 197
[8] Dorfs D, Krahne R, Falqui A, Manna L, Giannini C, Zanchet D 2010 Comprehensive Nanoscience and Technology 1 219
[9] Shi G H, Shang Z B, Wang Y, Jin W J, Zhang T C 2008 Spectrochim. Acta Part A 70 247
[10] Shen Q, Sato T, Hashimoto M, Chenc C, Toyoda T 2006 Thin Solid Films 499 299
[11] Mora-SeróI, Dittrich T, Susha A S, Rogach A L, Bisquert J 2008 Thin Solid Films 516 6994
[12] Ramanathan K, Contreras M A, Perkins C L, Asher S, Hasoon F S, Keane J, Young D, Romero M, Metzger W, Noufi R, Ward J, Duda A 2003 Prog. Photovolt.: Res. Appl. 11 225
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[14] Schaller R D, Klimov V I 2004 Phys. Rev. Lett. 92 186601
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[16] Cao Y C 2011 Science 332 48
[17] Kulakci M, Serincan U, Turan R, Finstad T G 2008 Nanotechnology 45 455403
[18] Conibeer G, Green M, Corkish R, Cho Y, Cho E C, Jiang C W, Fangsuwannarak T, Pink E, Huang Y D, Puzzer T, Trupke T, Richards B, Shalav A, Lin K L 2006 Thin Solid Films 511-512 654
[19] Park S, Cho E, Song D Y, Conibeer G, Green M A 2009 Sol. Energy Mater. Sol. Cells 93 684
[20] Timmerman D, Izeddin I, Stallinga P, Yassievich I N, Gregorkiewicz T 2008 Nature Photon. 2 61
[21] Di D, Perez-Wurfl I, Conibeer G, Green M A 2010 Sol. Energy Mater. Sol. Cells 94 2238
[22] Wurfl P, Ma L, Lin D, Hao X, Green M A, Conibeer G 2012 Sol. Energy Mater. Sol. Cells 100 65
[23] Zhang Z G 2008 Acta Phys. Sin. (in Chinese) 57 5823 [张治国2008物理学报 57 5823]
[24] Ji Z G 2005 Physics of Semiconductor (Hangzhou: Zhejiang University Press) p130 (in Chinese) [季振国 2005 半导体物理学(杭州: 浙江大学出版社)第130页]
[25] Guo Y C, Wang Z X 1984 Amorphous Solid Physics (Beijing: Science Press) p246 (in Chinese) [郭贻诚, 王震西 1984非晶态物理学 (北京: 科学出版社) 第246页]
[26] Chen K J 1987 Amorphous Semiconductor Physics (Beijing: China Academic Press) p91 (in Chinese) [陈坤基 1987非晶态半导体物理引论 (北京: 中国学术出版社)第91页]
[27] Luo J S, Rong A L 1986 Amorphous Semiconductor (Xi'an: Xi'an Jiao Tong University Press) p101 (in Chinese) [罗晋生, 戎霭伦 1986非晶半导体 (西安: 西安交通大学出版社)第101]
[28] Ji Z G 2005 Physics of Semiconductor (Zhejiang: Zhejiang University Press) p139 (in Chinese) [季振国 2005半导体物理学 (浙江: 浙江大学出版社) 第139页]
[29] Zhang Z G 2011 Chin. Sci. Bull. 56 2133 (in Chinese) [张治国 2011科学通报 56 2133]
[30] Wu Z Q, Wang B 2001 Film Growing (Beijing: Science Press) p170 (in Chinise) [吴自勤, 王兵 2001薄膜生长 (北京: 科学出版社) 第170页]
[31] Zhang Z G 2012 Appl. Mech. Mater. 217-219 1038
[32] Zhang Z G 2010 Chin. Phys. B 19 127802
-
[1] Huynh W U, Dittmer J J, Alivisatos A P 2002 Science 295 2425
[2] Liu W S, Wu H M, Tsao F H, Hsu T L, Chyi J I 2012 Sol. Energy Mater. Sol. Cells 105 237
[3] Mller J, Rech B, Springer J 2004 Sol. Energy 77 917
[4] Razykov T M, Ferekides C S, Morel D, Stefanakos E, Ullal H S, Upadhyaya H M 2011 Sol. Energy 85 1580
[5] Hegedus S S, McCandless B E 2005 Sol. Energy Mat. Sol. Cells 88 75
[6] Tvrdy K, Kamat P V 2010 Comprehensive Nanoscience and Technology 4 257
[7] Poulose A C, Veeranarayanan S, Varghese S H, Yoshida Y, Maekawa T, Kumar D S 2012 Chem. Phys. Lett. 539-540 197
[8] Dorfs D, Krahne R, Falqui A, Manna L, Giannini C, Zanchet D 2010 Comprehensive Nanoscience and Technology 1 219
[9] Shi G H, Shang Z B, Wang Y, Jin W J, Zhang T C 2008 Spectrochim. Acta Part A 70 247
[10] Shen Q, Sato T, Hashimoto M, Chenc C, Toyoda T 2006 Thin Solid Films 499 299
[11] Mora-SeróI, Dittrich T, Susha A S, Rogach A L, Bisquert J 2008 Thin Solid Films 516 6994
[12] Ramanathan K, Contreras M A, Perkins C L, Asher S, Hasoon F S, Keane J, Young D, Romero M, Metzger W, Noufi R, Ward J, Duda A 2003 Prog. Photovolt.: Res. Appl. 11 225
[13] Baskoutas S, Terzis A F 2006 J. Appl. Phys. 99 013708
[14] Schaller R D, Klimov V I 2004 Phys. Rev. Lett. 92 186601
[15] Mocatta D, Cohen G, Schattner J, Millo O, Rabani E, Banin U 2011 Science 332 77
[16] Cao Y C 2011 Science 332 48
[17] Kulakci M, Serincan U, Turan R, Finstad T G 2008 Nanotechnology 45 455403
[18] Conibeer G, Green M, Corkish R, Cho Y, Cho E C, Jiang C W, Fangsuwannarak T, Pink E, Huang Y D, Puzzer T, Trupke T, Richards B, Shalav A, Lin K L 2006 Thin Solid Films 511-512 654
[19] Park S, Cho E, Song D Y, Conibeer G, Green M A 2009 Sol. Energy Mater. Sol. Cells 93 684
[20] Timmerman D, Izeddin I, Stallinga P, Yassievich I N, Gregorkiewicz T 2008 Nature Photon. 2 61
[21] Di D, Perez-Wurfl I, Conibeer G, Green M A 2010 Sol. Energy Mater. Sol. Cells 94 2238
[22] Wurfl P, Ma L, Lin D, Hao X, Green M A, Conibeer G 2012 Sol. Energy Mater. Sol. Cells 100 65
[23] Zhang Z G 2008 Acta Phys. Sin. (in Chinese) 57 5823 [张治国2008物理学报 57 5823]
[24] Ji Z G 2005 Physics of Semiconductor (Hangzhou: Zhejiang University Press) p130 (in Chinese) [季振国 2005 半导体物理学(杭州: 浙江大学出版社)第130页]
[25] Guo Y C, Wang Z X 1984 Amorphous Solid Physics (Beijing: Science Press) p246 (in Chinese) [郭贻诚, 王震西 1984非晶态物理学 (北京: 科学出版社) 第246页]
[26] Chen K J 1987 Amorphous Semiconductor Physics (Beijing: China Academic Press) p91 (in Chinese) [陈坤基 1987非晶态半导体物理引论 (北京: 中国学术出版社)第91页]
[27] Luo J S, Rong A L 1986 Amorphous Semiconductor (Xi'an: Xi'an Jiao Tong University Press) p101 (in Chinese) [罗晋生, 戎霭伦 1986非晶半导体 (西安: 西安交通大学出版社)第101]
[28] Ji Z G 2005 Physics of Semiconductor (Zhejiang: Zhejiang University Press) p139 (in Chinese) [季振国 2005半导体物理学 (浙江: 浙江大学出版社) 第139页]
[29] Zhang Z G 2011 Chin. Sci. Bull. 56 2133 (in Chinese) [张治国 2011科学通报 56 2133]
[30] Wu Z Q, Wang B 2001 Film Growing (Beijing: Science Press) p170 (in Chinise) [吴自勤, 王兵 2001薄膜生长 (北京: 科学出版社) 第170页]
[31] Zhang Z G 2012 Appl. Mech. Mater. 217-219 1038
[32] Zhang Z G 2010 Chin. Phys. B 19 127802
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