60Co-γ射线辐照CMOS有源像素传感器诱发暗信号退化的机理研究

汪波; 李豫东; 郭旗; 刘昌举; 文林; 玛丽娅; 孙静; 王海娇; 丛忠超; 马武英

doi:10.7498/aps.63.056102

摘要

对某国产0.5 μm CMOS（Complementary Metal Oxide Semiconductor，互补金属氧化物半导体）N阱工艺CMOS有源像素传感器的电离总剂量效应进行了研究，通过60Co-γ 射线辐照试验，着重分析了对辐射最敏感的暗信号和暗信号非均匀性随总剂量退化的物理机理. 实验发现，随着辐照剂量的增加，暗信号和暗信号非均匀性显著退化，并且静态偏置条件下器件的辐射损伤最大. 暗信号退化的主要原因是光电二极管pn结和复位晶体管源端N+ /Psub结表面边界周围的SiO2产生了大量的界面态；暗信号非均匀性显著退化是由于光电二极管的暗信号增大引起. 上述工作可为深入研究CMOS有源像素传感器的抗辐射加固及其辐射损伤评估提供参考.

关键词:

Abstract

A study of ionizing radiation effects is presented for CMOS active pixel sensors manufactured in a 0.5-μm CMOS (complementary metal oxide semiconductor)by n-well technology. The basic mechanisms that may cause failure are also presented. After exposure in γ-rays, the most sensitive parts to radiation-dark signals and dark signal non-uniformity are discussed, i.e. the physical mechanism of the degradation by irradiation. One can see from the experiment that the mean dark signals are dramatically increased with total dose for both operated and static devices. Static device seems more affected by irradiation than operated device. We find that most part of the total dark signal in a pixel comes from the depletion of the photodiode edge at the surface and the rest part is caused by the leakage of the source region of the reset transistor. Dark signal non-uniformity follows the dark current evolution with total dose. Further study of photodiode and LOCOS (local oxidation of silicon) isolation behaviors under irradiation should be done so as to correctly use this qualification techniques on MOS sensors manufactured in CMOS n-well technology process.

Keywords:

作者及机构信息

1.
中国科学院新疆理化技术研究所, 乌鲁木齐 830011;

2.
中国科学院特殊环境功能材料与器件重点实验室, 乌鲁木齐 830011;

3.
新疆电子信息材料与器件重点实验室, 乌鲁木齐 830011;

4.
中国科学院大学, 北京 100049;

5.
重庆光电技术研究所, 重庆 400060

基金项目: 国家自然科学基金（批准号：11005152）资助的课题.

Authors and contacts

1.
Xinjiang Technical Institute of Physics and Chemistry, CAS., Urumqi 830011, China;

2.
Key Laboratory of Functional Materials and Devices under Special Environments, CAS., Urumqi 830011, China;

3.
Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumqi 830011, China;

4.
Graduate University of Chinese Academy of Sciences, Beijing 100049, China;

5.
Chongqing Optoelectronics Research Institute, Chongqing 400060, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11005152).

参考文献

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[2]	Robert C S, Bedabrata P, Thomas J C, Bruce R H, Guang Y, Julie B H, Christopher J W 2002 Proc. SPI E 4547 1
[3]	Stevanovic N, Hillegr, M, Hostica B J, Teuner A 2000 ISSCC Tech. Dig. 43 104
[4]	Graaf G, Wolffenbuttel R F 2004 Sensors and Actuators A 110 78
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[8]	Lv L, Zhang J C, Li L, Ma X H, Cao Y R, Hao Y 2012 Acta Phys. Sin. 61 057202 (in Chinese)[吕玲, 张进成, 李亮, 马晓华, 曹艳荣, 郝跃2012物理学报 61 057202]
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[11]	Zhang X F, Li Y D, Guo Q, Lu W 2013 Chinese Physics Letters 30 076102
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[14]	Goiffon V, Virmontois C, Magnan P, Girard S, Paillet P 2010 IEEE Trans. Nucl. Sci. 57 3087
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[16]	Gamal A E, Eltoukhy H 2005 IEEE Circuits and Devices Mag. 21 6
[17]	Goiffon V, Magnan P, Bernard F, Roll, G, Saint P O, Huger N, Corbiere F 2008 Proc. SPI E 6816 1
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[23]	Li M, Yu X F, Xue Y G, Lu J, Cui J W, Gao B 2012 Acta Phys. Sin. 61 106103 (in Chinese) [李明, 余学峰, 薛耀国, 卢健, 崔江维, 高博2012物理学报 61 106103]
[24]	Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, V Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1842
[25]	Torres A, Flament O 2002 IEEE Trans. Nucl. Sci. 49 1462
[26]	Gao B, Yu X F, Ren D Y, Cui J W, Lan B, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 068702 (in Chinese) [高博, 余学峰, 任迪远, 崔江维, 兰博, 李明, 王义元 2011 物理学报 60 068702]
[27]	Winokur P S, McGarrity J M, Boesch H E 1976 IEEE Trans. Nucl. Sci. 23 1580
[28]	Shang H C, Liu H X, Zhuo Q Q 2012 Acta Phys. Sin. 61 246101 (in Chinese) [商怀超, 刘红侠, 卓青青 2012 物理学报 61 246101]
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施引文献

[1]	Ogiers W, Uwaerts D, Dierickx B, Scheffer D, Meynants G, Truzzi C 1997 Second Round Table on Micro-Nano Technologies for Space Noordwijk, the Netherlands, October 15-17, 1997
[2]	Robert C S, Bedabrata P, Thomas J C, Bruce R H, Guang Y, Julie B H, Christopher J W 2002 Proc. SPI E 4547 1
[3]	Stevanovic N, Hillegr, M, Hostica B J, Teuner A 2000 ISSCC Tech. Dig. 43 104
[4]	Graaf G, Wolffenbuttel R F 2004 Sensors and Actuators A 110 78
[5]	Furuta M, Nishikawa Y, Inoue T, Kawahito S 2007 IEEE J. Solid State Circuits 42 766
[6]	Shoushun C, Boussaid F, Bermak A 2008 IEEE Sensors Journal 8 286
[7]	Claeys C, Simoen E (Translated by Liu Z L) 2008 Radiation Effects in Advanced Semiconductor Materials and Devices (Beijing: National Defence Industry Press) p20 (in Chinese) [Claeys C, Simoen E著, (刘忠立译)2008先进半导体材料及器件的辐射效应(北京:国防工业出版社)第20页]
[8]	Lv L, Zhang J C, Li L, Ma X H, Cao Y R, Hao Y 2012 Acta Phys. Sin. 61 057202 (in Chinese)[吕玲, 张进成, 李亮, 马晓华, 曹艳荣, 郝跃2012物理学报 61 057202]
[9]	Gao B, Liu G, Wang L X, Han Z S, Zhang Y F, Wang C L, Wen J C 2012 Acta Phys. Sin. 61 176107 (in Chinese) [高博, 刘刚, 王立新, 韩郑生, 张彦飞, 王春林, 温景超 2012物理学报 61 176107]
[10]	Zhang X F, Li Y D, Guo Q, Luo M C, He C F, Yu X, Shen Z H, Zhang X Y, Deng W, Wu Z X 2013 Acta Phys. Sin. 62 076106 (in Chinese) [张孝富, 李豫东, 郭旗, 罗木昌, 何承发, 于新, 申志辉, 张兴尧, 邓伟, 吴正新 2013物理学报 62 076106]
[11]	Zhang X F, Li Y D, Guo Q, Lu W 2013 Chinese Physics Letters 30 076102
[12]	Bogaerts J, Dierickx B, Mertens R 2002 IEEE Trans. Nucl. Sci. 49 1513
[13]	Cohen M, David J P 2000 IEEE Trans. Nucl. Sci. 47 2485
[14]	Goiffon V, Virmontois C, Magnan P, Girard S, Paillet P 2010 IEEE Trans. Nucl. Sci. 57 3087
[15]	Meng X T, Kang A G, Hang Q 2004 Atomic Energy Science and Technology 38 231 (in Chinese) [孟祥提, 康爱国, 黄强2004 原子能科学技术 38 231]
[16]	Gamal A E, Eltoukhy H 2005 IEEE Circuits and Devices Mag. 21 6
[17]	Goiffon V, Magnan P, Bernard F, Roll, G, Saint P O, Huger N, Corbiere F 2008 Proc. SPI E 6816 1
[18]	Loukianova N V, Folkerts H O, Maas J P V, Verbugt D W E, Mierop A J, Hoekstra W, Roks E, Theuwissen A J P 2003 IEEE Trans. Electron Devices 50 77
[19]	Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p57, 194 (in Chinese) [刘恩科, 朱秉升, 罗晋升 2003 半导体物理学 (北京: 电子工业出版社) 第57, 194页]
[20]	Hopkinson G R 1993 Radiation and its Effects on Components and Systems Saint-Malo, France, Sep13-16, 1993 p401
[21]	Hu H F 2008 Ph. D. Dissertation (Xi , an: Xidian University) (in Chinese) [陈海峰2008博士学位论文(西安: 西安电子科技大学)]
[22]	Guo W L 1989 Silicon-silicon dioxide interface physics (Beijing: National Defence Industry Press) p25 (in Chinese) [郭维廉1989硅-二氧化硅界面物理(北京: 国防工业出版社) 第25页]
[23]	Li M, Yu X F, Xue Y G, Lu J, Cui J W, Gao B 2012 Acta Phys. Sin. 61 106103 (in Chinese) [李明, 余学峰, 薛耀国, 卢健, 崔江维, 高博2012物理学报 61 106103]
[24]	Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, V Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1842
[25]	Torres A, Flament O 2002 IEEE Trans. Nucl. Sci. 49 1462
[26]	Gao B, Yu X F, Ren D Y, Cui J W, Lan B, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 068702 (in Chinese) [高博, 余学峰, 任迪远, 崔江维, 兰博, 李明, 王义元 2011 物理学报 60 068702]
[27]	Winokur P S, McGarrity J M, Boesch H E 1976 IEEE Trans. Nucl. Sci. 23 1580
[28]	Shang H C, Liu H X, Zhuo Q Q 2012 Acta Phys. Sin. 61 246101 (in Chinese) [商怀超, 刘红侠, 卓青青 2012 物理学报 61 246101]
[29]	Winokur P S, Boesch H E, McGarrity J M, McLean F B 1977 IEEE Trans. Nucl. Sci. 24 2113
[30]	McLean F B 1980 IEEE Trans. Nucl. Sci. 27 1651
[31]	Saks N S, Ancona M G, Modolo J A 1986 IEEE Trans. Nucl. Sci. 33 1185

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