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中国物理学会期刊

一维扩展离子Hubbard模型的相图研究

CSTR: 32037.14.aps.64.107101

Phase diagram of the one-dimensional extended ionic Hubbard model

CSTR: 32037.14.aps.64.107101
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  • 应用密度矩阵重整化群方法, 研究了存在交错离子势Δ时一维半满扩展Hubbard模型的相图. 通过计算关联函数、结构因子、位置算符等方法, 描绘了从Mott绝缘体-键有序绝缘体-Band 绝缘体的特性并给出了精确的相边界. 研究发现: 中间的键有序绝缘体相在相图中占据了很小的一部分区域, 当存在离子势Δ的情况下, 这个区域将会有所增大; 而当相互作用足够强时, 这个中间相消失. 给出了离子Hubbard模型(最近邻电子-电子相互作用V=0)的相图.

     

    We use a density-matrix renormalization group method to study quantitatively the phase diagram of the half-filled one-dimensional (1D) extended Hubbard model in the presence of a staggered ionic potential Δ. An extensive finite-size scaling analysis is carried out on the relevant structure factors and localization operator to characterize the Mott-insulator (MI)-bond-ordered insulator (BOI)-band-insulator (BI) transitions. The intermediate BOI phase occupies a small region of the phase diagram, and this region is enlarged in the presence of Δ. In addition, the phase diagram of ionic Hubbard (the nearest-neighbor electron-electron interaction V=0) is also given.

     

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