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不同退火温度的Al2O3:C薄膜热释光和光释光性能

吴丽 王倩 李国栋 窦巧娅 吉旭

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不同退火温度的Al2O3:C薄膜热释光和光释光性能

吴丽, 王倩, 李国栋, 窦巧娅, 吉旭

Thermoluminescence and optically stimulated luminescence characteristics of Al2O3:C films annealed at different tempeartures

Wu Li, Wang Qian, Li Guo-Dong, Dou Qiao-Ya, Ji Xu
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  • -Al2O3:C晶体的热释光和光释光性能优越, 但其制备要求高, 需高温和高还原气氛. 与 -Al2O3:C晶体性能接近的 -Al2O3:C陶瓷, 热释光峰不单一. 本文采用两次阳极氧化法在0.5 mol/L的草酸溶液中5 ℃恒温制备高度均匀有序的多孔Al2O3:C薄膜, 主要研究不同退火温度对其热释光和光释光特性的影响. 结果表明, 经不同温度退火后的Al2O3:C薄膜均为非晶结构; 不同退火温度的Al2O3:C薄膜热释光的主发光峰约在310 ℃左右, 符合通用级动力学模型. 600 ℃退火后的Al2O3:C薄膜热释光灵敏度最强, 其热释光剂量曲线在110 Gy范围内具有很好的线性响应, 在剂量10120 Gy 范围内出现超线性响应; 在相同的辐照剂量下, 随着退火温度的升高( 600 ℃)光释光的初始发光强度逐渐增强. 不同退火温度的Al2O3:C薄膜光释光衰减曲线都呈典型的指数衰减且快衰减速率相比 -Al2O3:C晶体显著加快. 600 ℃退火后的Al2O3:C薄膜光释光灵敏度最强, 其光释光剂量响应曲线在1200 Gy整体上都具有很好的剂量线性关系. 与热释光相比, Al2O3:C薄膜的光释光具有更宽的线性剂量响应范围. 此研究为Al2O3:C薄膜作为光释光辐射剂量材料做出了有益的探索.
    -Al2O3:C crystal is a high sensitive luminescence dosemeter, and it possesses a high thermoluminescence (TL) sensitivity, approximately 40-60 times greater than LiF: Mg, Ti. However, the crystal growth requires sophisticated laboratories, high temperatures and highly reducing atmosphere. The fluorescence and TL characteristics of -Al2O3:C ceramic are similar to those of -Al2O3:C crystal, however, it shows three TL peaks. In this work, porous alumina membranes are prepared by two-step anodization in 0.5 M/L oxalic acid at 5 ℃. We investigate the influence of annealing temperature ( 600 ℃) on thermoluminescence (TL) and optically stimulated luminescence (OSL) characteristics of Al2O3:C films and discuss the influence mechanism. The scanning electron microscopy measurement reveals that Al2O3:C film possesses highly ordered nanopores with homogeneous dimensions arranged in a closed-packed hexagonal pattern. The energy dispersive X ray spectroscopy and the Fourier transform infrared spectroscopy results indicate that oxalic acid impurity is incorporated into the porous alumina membrane in the synthesis process, after the annealing treatment, the oxalic acid impurity decomposes and C2+ replaces Al3+, which leads to the formation of F+and the C content of samples increasing with elevated annealing temperature. The X-ray diffraction measurement reveals that Al2O3:C films annealed at different temperatures are amorphous. TL measurements show that the dominated peak of Al2O3:C film is centered at around 310 ℃, owing to the number of F+increasing with the annealed temperature increasing, under the same irradiation dose, the sample annealed at 600 ℃ has the greatest TL intensity. With the increase of the irradiation dose, the TL intensity increases and the dominated peak gradually shifts to high temperature, which is consistent with the general order kinetic model. The sample annealed at 600 ℃ has the greatest TL sensitivity and its TL response shows excellent linear characteristic in as dose range of 1-10 Gy, but shows super-linear behavior in a dose range of 10-120 Gy. The OSL measurements show that with the increases of the annealed temperature and the irradiation dose, the OSL initial intensity increases and each of all samples shows a typical exponential decay. Compared with the case of -Al2O3:C crystal, the fast attenuation rate of film is dramatically accelerated. In a dose range of 1-200 Gy, the OSL responses of all samples each show an excellent linear characteristic, the sample annealed at 600 ℃ has the greatest OSL sensitivity. Compared with TL response, OSL response of Al2O3:C film shows a wider range of linear dose response. In this paper we have made a beneficial exploration for Al2O3:C films as OSL dosimerer.
      通信作者: 王倩, wq@xju.edu.cn
    • 基金项目: 国家自然科学基金(批准号: 11065009)资助的课题.
      Corresponding author: Wang Qian, wq@xju.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11065009).
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    Li G D, Wang Q, Deng B X, Zhang Y J 2014 Acta Phys. Sin. 63 247802 (in Chinese) [李国栋, 王倩, 邓保霞, 张雅晶 2014 物理学报 63 247802]

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    Guo J Y, Tang Q, Jia Y X, Liu X W, Liu Y B 2014 Nucl. Tech. 37 050203 (in Chinese) [郭竞渊, 唐强, 贾育新, 刘小伟, 刘彦兵 2014 核技术 37 050203]

    [15]

    Yang X B, Xu J, Li H J, Bi Q Y, Cheng Y, Su L B, Tang Q 2010 Chin Phys. B 19 047803

    [16]

    Xu W L, Zheng M J, Wu S, Shen W Z 2004 Appl. Phys. Lett. 85 4364

    [17]

    Sun X Y, Xu F Q, Li Z M, Zhang W H 2006 J. Lumin. 121 588

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    Yang P X, An M Z, Tian Z Q 2007 Mater. Sci. Technol. 15 87 (in Chinese) [杨培霞, 安茂忠, 田兆清 2007 材料科学与工艺 15 87]

    [19]

    Hu K Y, Li H J, Xu J, Yang Q H, Su L B, Tang Q 2012 Acta Phys. Sin. 61 157802 (in Chinese) [胡克艳, 李红军, 徐军, 杨秋红, 苏良碧, 唐强 2012 物理学报 61 157802]

    [20]

    Li Z W, Jiang J L, Wang Q 2009 Nucl. Electron. Detect. Technol. 29 1334 (in Chinese) [李子威, 姜家亮, 王倩 2009 核电子学与探测技术 29 1334]

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    Li Z J, Huang K L 2007 Lumin. escence 22 355

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    Khan G G, Singh A K, Mandal K 2013 J. Lumin. 134 772

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    Markey B G, Colyott L E, Mckeever S W S 1995 Radiat. Meas. 24 457

  • [1]

    Mckeever S W S (translated by Cai G G, Wu F, Wang S T) 1993 Thermoluminescence of Solids (Beijing:Atomic Press ) pp1-139 (in Chinese) [Mckeever S W S 著(蔡干钢吴芳, 王所亭译) 1993 固体热释光(北京: 原子能出版社)第 1-139 页]

    [2]

    Rieke J K, Daniels F 1957 J. Phys. Chem. 61 629

    [3]

    Akselrod M S, Kortov V S, Kravetsky D J, Gotlib V I 1990 Radiat. Prot. Dosim. 32 15

    [4]

    Yang X B, Li H J, Xu J, Cheng Y, Su L B, Tang Q 2008 Acta Phys. Sin. 57 7900 (in Chinese) [杨新波, 李红军, 徐军, 程艳, 苏良碧, 唐强 2008 物理学报 57 7900]

    [5]

    McKeever S W S 2001 Nucl. Instr. Meth. B 184 29

    [6]

    Tang K Y, Fan H J, Zhu H Y, Cui H, Liu Z 2011 Nucl. Electron. Detect. Technol. 31 1152 (in Chinese) [唐开勇, 樊海军, 朱红英, 崔辉, 刘正 2011 核电子学与探测技术 31 1152]

    [7]

    Kortov V S Ermakov A E Zatsepin A F Nikiforov S V 2008 Radiat Meas 43 341

    [8]

    Zhang B, Lu S Z, Zhang H J, Yang Q H 2010 Chin Phys. B 19 077805

    [9]

    de Azevedo W M, de Oliveira G B, da Silva E F, Khoury H J, de Jesus E F O 2006 Radiat Prot. Dosim. 119 201

    [10]

    de Barros V S M, Khoury H J, Azevedo W M, da Silva E F 2007 Nucl. Instr. Meth. A 580 180

    [11]

    Yang P X, Zhang X M, An M Z, Wang F P 2008 Electroplat. Pollut. Control 28 28 (in Chinese) [杨培霞, 张新梅, 安茂忠, 王福平2008 电镀与环保 28 28]

    [12]

    Ma C L 2004 Acta Phys. Sin. 53 1952 (in Chinese) [马春兰 2004 物理学报 53 1952]

    [13]

    Li G D, Wang Q, Deng B X, Zhang Y J 2014 Acta Phys. Sin. 63 247802 (in Chinese) [李国栋, 王倩, 邓保霞, 张雅晶 2014 物理学报 63 247802]

    [14]

    Guo J Y, Tang Q, Jia Y X, Liu X W, Liu Y B 2014 Nucl. Tech. 37 050203 (in Chinese) [郭竞渊, 唐强, 贾育新, 刘小伟, 刘彦兵 2014 核技术 37 050203]

    [15]

    Yang X B, Xu J, Li H J, Bi Q Y, Cheng Y, Su L B, Tang Q 2010 Chin Phys. B 19 047803

    [16]

    Xu W L, Zheng M J, Wu S, Shen W Z 2004 Appl. Phys. Lett. 85 4364

    [17]

    Sun X Y, Xu F Q, Li Z M, Zhang W H 2006 J. Lumin. 121 588

    [18]

    Yang P X, An M Z, Tian Z Q 2007 Mater. Sci. Technol. 15 87 (in Chinese) [杨培霞, 安茂忠, 田兆清 2007 材料科学与工艺 15 87]

    [19]

    Hu K Y, Li H J, Xu J, Yang Q H, Su L B, Tang Q 2012 Acta Phys. Sin. 61 157802 (in Chinese) [胡克艳, 李红军, 徐军, 杨秋红, 苏良碧, 唐强 2012 物理学报 61 157802]

    [20]

    Li Z W, Jiang J L, Wang Q 2009 Nucl. Electron. Detect. Technol. 29 1334 (in Chinese) [李子威, 姜家亮, 王倩 2009 核电子学与探测技术 29 1334]

    [21]

    Li Z J, Huang K L 2007 Lumin. escence 22 355

    [22]

    Khan G G, Singh A K, Mandal K 2013 J. Lumin. 134 772

    [23]

    Markey B G, Colyott L E, Mckeever S W S 1995 Radiat. Meas. 24 457

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出版历程
  • 收稿日期:  2015-09-22
  • 修回日期:  2015-11-16
  • 刊出日期:  2016-02-05

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