室温磁性斯格明子材料及其应用研究进展

刘益; 钱正洪; 朱建国

doi:10.7498/aps.69.20200984

摘要

磁性斯格明子是一种具有涡旋状非共线自旋结构的准粒子, 具有独特的拓扑保护特性, 可在极低电流驱动下运动, 有望在信息技术领域获得广泛应用. 从2015年开始, 科学家已经发现了多种室温磁性斯格明子材料, 例如斯格明子多层膜、人工斯格明子材料、β-Mn型单晶材料、中心对称材料(铁氧体、六方Ni₂In型)等. 其中多层膜材料由于其制备工艺简单、可通过调节各膜层厚度优化性能、器件集成度高等优点而备受关注. 这些室温磁性斯格明子材料具有涌生电动势、拓扑霍尔效应、斯格明子霍尔效应等特性, 有望用来制备多种新型自旋电子器件, 例如赛道存储器、微波探测器、纳米振荡器等, 其中赛道存储器有望成为下一代非易失性、低能耗和高密度的存储器. 本文首先介绍了磁性斯格明子的基本特性, 然后综述了近年来室温磁性斯格明子材料的研究进展、制备技术及表征方法, 最后简单介绍了用室温磁性斯格明子材料研制赛道存储器、微波探测器等原型器件的研究进展, 展望了室温磁性斯格明子材料的未来发展趋势.

关键词:

Abstract

It has been found that many magnetic materials possess the properties arising from skyrmions at room temperature. In addition to the common interaction energy, chiral interaction is also needed to form the skyrmion in magnetic material. There are four chiral magnetic interactions, namely: 1) Dzyaloshinskii-Moriya (DM) interaction; 2) long-ranged magnetic dipolar interaction; 3) four-spin exchange interaction; 4) frustrated exchanged interaction. Through the competition between exchange interaction and chiral interaction, magnetic skyrmion can be realized in magnetic material subject to a certain magnetic field and temperature. The skyrmion generated by the DM interaction features small size (5–100 nm), which is easy to adjust. The skyrmion can be driven by magnetic field or ultralow current density. The magnetic materials with skyrmion can exhibit the properties related to the skyrmion Hall effect, the topological Hall effect and the emergent electrodynamics, which are closely related to the skyrmion number. The existence of skyrmion in the magnetic material can be indirectly measured by topological Hall effect. The movement of skyrmion can be driven by spin polarized current in the direction either parallel or perpendicular to the current direction. The movement of the skyrmion driven by spin polarized currents will continue when the current is present, and will disappear when the current disappears. In previous studies, magnetic skyrmions were realized in a variety of materials. However magnetic skyrmions were found only in very limited types of single crystal materials at room temperature or near room temperature. In recent years, scientists have discovered a variety of magnetic skyrmion materials at room temperature, including film materials (such as multilayer materials, artificial skyrmion materials) and crystal materialssuch as β-Mn-type Co_10–x/2Zn_10–x/2Mn_x, Fe₃Sn₂. Among all kinds of room temperature magnetic skyrmion materials, the most valuable one is the multilayer film material. The Skyrmion multilayer film has the advantages of small size, adjustable material type, simple preparation, good temperature stability, good device integration,etc. At the same time, skyrmion multilayer film is very easy to optimize by adjusting and constructing a special structure that has the wanted types of materials each with a certain thickness. Artificial skyrmion material obtains artificial skyrmion by constructing a micro-nano structure, therefore the artificial skyrmion with high-temperature stability can be realized by choosing high Curie temperature materials. There are a variety of materials which can realize the skyrmion above room temperature, such as Co₉Zn₉Mn₂ (300–390 K) and Fe₃Sn₂ (100–400 K). These room temperature materials further widen the temperature application range of skyrmion. The room temperature materials can be prepared or characterized by a variety of techniquesincluding sputtering for fabrication and X-ray magnetic circular dichroism-photoemission electron microscopy (XMCD-PEEM) for characterization. The discovery of the magnetic skyrmion materials at room temperature not only enriches the research content of materials science, but also makes the skyrmion widely applicable in novel electronic devices (such as racetrack memory, microwave detector, oscillators). Because the skyrmion has the advantages of small size, ultra-low driving current density, and topological stability, it is expected to produce racetrack memory based on the skyrmion with low energy consumption, non-volatile and high density. The MTJ microwave detector based on skyrmion can be achieved with no external magnetic field nor bias current but with low power input (< 1.0 μW); the sensitivity of the microwave detector can reach 2000 V·W^–1. The frequency of the oscillator based on skyrmion can be tuned by magnetic field or current, and moreover, the oscillato is very easy to integrate with IC. In this paper, first, the basic characteristic of magnetic skyrmion is introduced; and then room temperature magnetic skyrmion is reviewed; finally the advances of the racetrack memory, microwave detectors and oscillators are introduced, highlighting the development trend of room temperature magnetic skyrmion.

Keywords:

作者及机构信息

1.
四川大学材料科学与工程学院, 成都　610064

2.
杭州师范大学信息科学与工程学院, 杭州　311121

通信作者: 钱正洪, zqian@hdu.edu.cn ; 朱建国, nic0400@scu.edu.cn

基金项目: 国家重点研发计划(批准号: 2018YFF01010701)和中央高校基本科研业务费专项资金资助的课题

Authors and contacts

1.
College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China

2.
School of Information Science and Engineering, Hangzhou Normal University, Hangzhou 311121, China

Corresponding author: Qian Zheng-Hong, zqian@hdu.edu.cn ; Zhu Jian-Guo, nic0400@scu.edu.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFF01010701) and the Fundamental Research Funds for the Central Universities, China

文章全文 : translate this paragraph

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施引文献

图 1 不同自旋结构的斯格明子示意图　(a) 奈尔型斯格明子; (b) 布洛赫型斯格明子; (c) 奈尔型斯格明子; (d)布洛赫型斯格明子; (e)−(h) 反斯格明子; (i)单位磁矩方位示意图

Fig. 1. The spin structure diagram of different skyrmions: (a)Néel type skyrmion; (b) Bloch type skyrmion; (c) Néel type skyrmion; (d) Bloch type skyrmion; (e)−(h) anti-skyrmion; (i) the altitude and azimuth diagram of unit magnetic moment.

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图 2 (a)斯格明子在电流作用下的运动及电子在涌生磁场作用生成的洛伦兹力作用下的偏转^[1]; (b) 斯格明子振荡示意图^[1]

Fig. 2. (a) Skyrmion move under the flow of electrons. Electrons are deflected by the Lorentz force due to the emergent magnetic field^[1]; (b) oscillation diagram of magnetic skyrmion^[1].

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图 4 (a)实空间中四方和三方斯格明子晶格示意图^[24]; (b) Co₉Zn₉Mn₂单晶的温度-磁场相图(T-H)^[24]

Fig. 4. (a) Schematic figures of a triangular-lattice skyrmion crystal (SkX) and a square like-lattice SkX in real space^[24]; (b) temperature(T)- magnetic field(H) state diagram of bulk Co₉Zn₉Mn₂^[24].

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图 3 (a) Ta/CoFeB/TaO_x三层膜桥式结构中斯格明子的形成^[14]; (b) 在Pt/Co/MgO三层膜正方型结构中的斯格明子^[21]; (c)在Pt和Ir层中Co层中DM作用的的叠加^[18]; (d)在脉冲10 V电场下, 迷宫磁畴转化为斯格明子^[19]; (e) 通过磁光克尔显微镜在薄膜Ta/CoFeB/TaO_x直接观察到斯格明子霍尔效应^[17]; (f)斯格明子霍尔角与电流密度的函数关系^[17]

Fig. 3. (a) Skyrmion bubbles realized at the exit of a constriction of Ta/CoFeB/TaO_x trilayer^[14]; (b) skyrmion realized in a square of Pt/Co/MgO trilayer^[21]; (c) additive DM for Co between Pt and Ir^[18];(d) with the electric field pulse, the labyrinth domain is transformed into the skyrmion^[19] (e) skyrmion Hall effect is clearly observed in successive Kerr microscopy images of a Ta/CoFeB/TaO_x trilayer^[17]; (f) phase diagram of the skyrmion Hall angle as a function of current density^[17].

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图 5 (a) 垂直赛道存储器示意图; (b) 水平赛道示意图; (c) 信息读出; (d) 信息写入; (e)赛道存储器的排列示意图^[53]

Fig. 5. (a) Schematic diagram of vertical racetrack; (b) schematic diagram of horizontal racetrack; (c) reading of information; (d) writing of information; (e) schematic diagram of racetrack storage array^[53].

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图 6 (a) 微波探测器及其电路原理图; (b) 斯格明子螺旋示意图^[64]

Fig. 6. (a) Microwave detector devices and circuit schematics; (b) skyrmion rotates around the nano-contact^[64].

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表 1 手性相互作用的类型^[1]

Table 1. Types of chiral interactions^[1].

作用机制	磁偶极相互作用	DM作用	阻挫交换作用	四自旋交换相互作用
斯格明子尺寸/nm	100—1000	5—100	~1	~1
典型材料	MnNiGa^[16]	MnSi^[10]	Fe₃Sn₂^[26]	Fe/Ir(111)^[11]

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表 2 低温磁性斯格明子材料

Table 2. Magnetic skyrmions materials at low temperature

材料	材料种类	斯格明子种类	制备方法	斯格明子温度/K
MnSi^[10]	单晶	布洛赫	布里奇曼法	29
Fe_0.5Co_0.5Si^[35]	单晶	布洛赫	布里奇曼法	25
FeGe^[13]	单晶	布洛赫	布里奇曼法	60—260
FeGe^[33]	单晶	布洛赫	布里奇曼法	250—270
Fe_1–_xCo_xSi (x = 0.5)^[39]	单晶	布洛赫	布里奇曼法	10
Fe/Ir^[11]	金属超薄层	奈尔型	分子束外延法	11
PdFe/Ir(1 1 1)^[38]	金属超薄层	奈尔型	分子束外延法	4.2
Cu₂OSeO₃^[36]	单晶	布洛赫	布里奇曼法	60
FeGe_1–_xSi_x (x ~ 0.25)^[39]	单晶	布洛赫	布里奇曼法	95

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表 3 室温斯格明子材料

Table 3. Magnetic skyrmions materials at room temperature.

	材料类型		典型材料	制备方法	斯格明子温度范围/K	斯格明子的尺寸/nm
薄膜材料	多层膜材料		Ta/CoFeB/TaOx^[17] (Ir/Co/Pt)₁₀^[18] Pt/Co/Ta, Pt/CoFeB/MgO^[19]	直流溅射	室温	1000 30—90 100
	反铁磁/铁磁材料薄膜		[Pt/Gd₂₅Fe_65.6Co_9.4/MgO]_n^[23]	直流溅射	室温	180
	人工斯格明子材料		Co/Ni/Cu(001)^[15] Co/[Co/Pd]_n, Co/Pd^[40]	直流溅射	室温	1000
单晶材料	手性对称材料		Co₈Zn₈Mn₄^[41] Co₈Zn₉Mn₃^[25] (β-Mn结构)	布里奇曼法	284—300 311—320	> 125
	中心对称材料	铁氧体	Ba(Fe_1–xSc_xMg_0.05)₁₂O₁₉^[42]	布里奇曼法	室温	200
	中心对称材料	金属间化合物	MnNiGa^[16]、	布里奇曼法	100—340	90
	阻挫型		Fe₃Sn₂^[26]	聚焦离子束技术(FIB)	100—340	300

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表 4 室温薄膜材料中斯格明子在电流驱动下运动

Table 4. The motion of skyrmion in room temperature films driven by current.

材料	驱动电流/10⁷A·cm^–2	移动速度/m·s^–1	霍尔角/(°)	温度	磁场/mT
Ta/CoFeB/TaOx^[17]	0.62	0.75	32	室温	0.52
(Pt/Co/Ta)₁₅^[19]	3.50	50	19.4	室温	有
(Pt/CoFeB/MgO)₁₅^[19]	5.00	100	4.01	室温	有
[Pt/Gd₂₅Fe_65.6Co_9.4)/MgO]₂₀^[23]	3.55	50	20	室温	145.00
[Pt/CoFeB/MgO]₁₅^[29]	4.20	100	30	室温	30.00

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表 5 斯格明子材料常见制备方式

Table 5. Common preparation method of skyrmion materials.

方式	材料类型	制备时间	优点
直流溅射	薄膜材料	3 h	成本低, 适合工业量产
分子束外延	薄膜材料	> 1 d	薄膜平整度高
布里奇曼法	单晶材料	1 m	制作大尺寸器件

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表 6 室温斯格明子的表征技术一览表^[4]

Table 6. List of room temperature skyrmion characterization technologies^[4].

方式	分辨率 /nm	优点	适用场景
XMCD- PEEM	~25	平面内高自旋分辨率	外层磁性斯格明子
STXM	~25	可探测磁场及电场敏感材料实时监控	多层膜内部的斯格明子结构
SPLEEM	~10	平面高分辨率高的测试敏感度	原位沉积表面的斯格明子
X射线全息术	~10	无误差探测实时监控(~70 ps)	纳米尺寸的多层膜内部的斯格明子结构
MOKEM	1000	操作简单易行	尺寸大于1 μm 的斯格明子

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