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本文研究InGaN作为AlGaN/GaN插入层引起的电子输运性质的变化, 考虑了AlGaN和InGaN势垒层的自发极化与压电极化对AlxGa1–xN/InyGa1–yN/GaN双异质结高电子迁移率晶体管中极化电荷面密度、二维电子气(2DEG)浓度的影响, 理论分析了不同In摩尔组分下, InGaN厚度与界面粗糙度散射、随机偶极散射和极性光学声子散射之间的关系. 计算结果表明: 界面粗糙度散射和随机偶极散射对双异质结AlxGa1–xN/InyGa1–yN/GaN的电子输运性质有重要影响, 极性光学声子散射对其影响最弱; 2DEG浓度、界面粗糙度散射、随机偶极散射和极性光学声子散射的强弱由InGaN势垒层厚度和In摩尔组分共同决定.This paper studies the changes in electronic transport properties caused by InGaN as an AlGaN/GaN insertion layer, and considers the effects of the spontaneous polarization and piezoelectric polarization of AlGaN and InGaN barrier layers on the surface density of polarized charge, and the concentration of two-dimensional electron gas (2DEG) in AlxGa1–xN/InyGa1–yN/GaN double heterojunction high-electron-mobility transistor. The InGaN thickness and interface roughness scattering, random dipole scattering and polar optical phonons under different In molar compositions are analyzed. The calculation results show that the interface roughness scattering and random dipole scattering have an important influence on the electron transport properties of the double heterojunction AlxGa1–xN/InyGa1–yN/GaN, and the polar optical phonon scattering has the weakest influence; 2DEG concentration, the strength of interface roughness scattering, random dipole scattering and polar optical phonon scattering are determined by the thickness of the InGaN barrier layer and the molar composition of In. This paper takes 2DEG in the AlxGa1–xN/InyGa1–yN/GaN double heterojunction as the research object, considering the barrier layer of finite thickness, taking into account the spontaneous polarization effect and piezoelectric polarization effect of each layer, and giving AlxGa1–xN/GaN 2DEG characteristics in the InyGa1–yN/GaN double heterostructure, discussing the scattering of 2DEG concentration and interface roughness by changing the In molar composition and the thickness of the InGaN barrier layer under the same Al molar composition and the thickness of the AlGaN barrier layer, Random dipole scattering and polar optical phonon scattering. The results of the present study are of great significance in controlling the 2DEG concentration in the AlxGa1–xN/InyGa1–yN/GaN double heterojunction structure and improving the electron mobility. This paper presents the analytical expression of 2DEG concentration ns in AlxGa1–xN/InyGa1–yN/ GaN double heterostructure. The effects of the thickness of the InGaN insertion layer and the molar composition of indium on the 2DEG concentration, interface roughness scattering, random dipole scattering and total mobility are studied. According to the theoretical calculation results, on condition that the physical properties of the AlGaN barrier layer remain unchanged, choosing the appropriate InGaN barrier layer thickness and In molar composition concentration can better control the 2DEG concentration and carrier mobility. These results are beneficial to widely using the double heterojunction AlxGa1–xN/InyGa1–yN/GaN in actual nitride based semiconductor devices.
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Keywords:
- two-dimensional electron gases density /
- interface roughness scattering /
- random dipole scattering /
- polar optical phonon scattering
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图 1 AlxGa1–xN/InyGa1–yN/GaN异质结结构图
Fig. 1. The structure of AlxGa1–xN/InyGa1–yN/GaN heterojunction.
图 2 AlxGa1–xN/InyGa1–yN/GaN异质结导带剖面示意图
Fig. 2. Schematic diagram of conduction band profile of AlxGa1–xN/InyGa1–yN/GaN structure.
图 3 在不同In摩尔组分下, InGaN势垒层厚度和二维电子气浓度的关系
Fig. 3. The relationship between the thickness of InGaN and 2 DEG sheet density under different In mole fraction.
图 4 在不同In摩尔组分下, InGaN势垒层厚度与界面粗糙度散射迁移率之间的关系
Fig. 4. The relationship between the thickness of InGaN and mobility limited by interface roughness scattering under different In mole fraction.
图 5 在不同In摩尔组分下, InGaN势垒层厚度与随机偶极散射的迁移率之间的关系
Fig. 5. The relationship between the thickness of InGaN and mobility limited by random dipole scattering under different In mole fraction.
图 6 极性光学声子散射迁移率和InGaN势垒层厚度的关系
Fig. 6. The relationship between the thickness of InGaN and polar optical phonon scattering.
图 7 在不同In摩尔组分下, 总迁移率和InGaN势垒层厚度的关系
Fig. 7. The relationship between the thickness of InGaN and total mobility under different In mole fraction.
表 1 AlN, InN, GaN, AlxGa1–xN和InyGa1–yN的各项物理参数(300 K)[17]
Table 1. Physical parameters of AlN, InN, GaN, AlxGa1–xN and InyGa1–yN[17].
参数 AlN InN GaN AlxGa1–xN InyGa1–yN a/(10–10 m) 3.112 3.545 3.189 xPAlN + (1 – x)PGaN yPInN + (1 – y)PGaN c/(10–10 m) 4.982 5.703 5.186 ε/(10–11 F·m–1) 7.53 13.50 7.88 C13/GPa 108 92 103 C33/GPa 373 224 405 e31/(C·m–2) –0.6 –0.57 –0.49 e33/(C·m–2) 1.46 0.97 0.73 PSP/(C·m–2) –0.081 –0.032 –0.029 
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[1] Chu R M, Zhou Y G, Zheng Y D, Gu S L, Shen B, Zhang R, Jiang R L, Han P, Shi Y 2003 Appl. Phys. A 77 669
Google Scholar
[2] Chu R M, Zhou Y G, Zheng Y D, Han P, Shen B, Gu S L 2001 Appl. Phys. Lett. 79 2270
Google Scholar
[3] Arulkumaran S, Ng G I, Ranjan K, Kumar C M M, Foo S C, Ang K S, Vicknesh S, Dolmanan S B, Bhat T, Tripathy S 2015 Jpn. J. Appl. Phys. 54 04DF12
Google Scholar
[4] Ambacher O, Smart G, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F 1999 J. Appl. Phys. 85 3222
Google Scholar
[5] Yan J D, Wang X L, Wang Q, Qu S, Xiao H L, Peng E C, Kang H, Wang C M, Feng C, Yin H B, Jiang L J, Li B Q, Wang Z G, Hou X 2014 J. Appl. Phys. 116 195
Google Scholar
[6] Li H, Liu G, Wei H, Jiao C 2013 Appl. Phys. Lett. 103 232109
Google Scholar
[7] Iucolano F, Roccaforte F, Giannazzo F, Raineri V 2007 J. Appl. Phys. 102 113701
Google Scholar
[8] Peng J, Liu X, Ji D, Lu Y 2017 Thin Solid Films 623 98
Google Scholar
[9] Wang C X, Tsubaki K, Kobayashi N, Makimoto T 2004 Appl. Phys. Lett. 84 2313
Google Scholar
[10] Ghosh J, Ganguly S 2018 Jpn. J. Appl. Phys. 57 080305
Google Scholar
[11] Chakraborty A, Ghosh S, Mukhopadhyay P, Jana S K, Dinara S M, Bag A, Mahata M K, Kumar R, Das S, Das P 2016 Electron. Mater. Lett. 12 232
Google Scholar
[12] Bag A, Majumdar S, Das S, Biswas D 2017 Mater. Design. 133 176
Google Scholar
[13] Simin G, Hu X, Tarakji A, Zhang J, Koudymov A, Saygi S, Yang J, Khan A, Shur M, Gaska R 2001 Jpn. J. Appl. Phys. 40 L1142
Google Scholar
[14] Maeda N, Saitoh T, Tsubaki K, Nishida T, Kobayashi N 1999 Jpn. J. Appl. Phys. 38 L799
Google Scholar
[15] Luan C B, Lin Z J, Lü Y J, Zhao J T, Wang Y, Chen H, Wang Z G 2014 J. Appl. Phys. 116 044507
Google Scholar
[16] Liou B T, Lin C Y, Yen S H, Kuo Y K 2005 Opt. Commun. 249 217
Google Scholar
[17] NSM archive. http://www.ioffe.ru/SVA/NSM/Semicond. [2021– 04–25]
[18] Tung R T 1991 Appl. Phys. Lett. 58 2821
Google Scholar
[19] Goyal N, Fjeldly T 2016 IEEE T. Electron. Dev. 63 881
Google Scholar
[20] Shur M 1987 GaAs Devices and Circuits (New York: Plenum) pp520–535.
[21] Liu W F, Luo Y L, Sang Y C, Bian J M, Zhao Y, Liu Y H, Qin F W 2013 Mater. Lett. 95 135
Google Scholar
[22] Chen N C, Chang P H, Wang Y N, Peng H C, Lien W C, Shih C F, Chang C A, Wu G M 2005 Appl. Phys. Lett. 87 212111
Google Scholar
[23] Zhong H, Liu Z, Lin S, Xu G, Fan Y, Huang Z, Wang J, Ren G, Ke X 2014 Appl. Phys. Lett. 104 202101
Google Scholar
[24] Gökden S, Tülek R, Teke A, Leach J H, Fan Q, Xie J, Özgür Ü, Morkoc H, Lisesivdin S B, Özbay E 2010 Semicond. Sci. Tech. 25 045024
Google Scholar
[25] Jena D, Gossard A C, Mishra U K 2000 J. Appl. Phys. 88 4734
Google Scholar
[26] Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan M A 2003 Solid. State. Phys. 47 1099
Google Scholar
[27] Gaska R, Yang J W, Osinsky A, Chen Q, Han K, Asif M 1998 Appl. Phys. Lett. 72 707
Google Scholar
[28] Lanford W, Kumar V, Schwindt R, Kuliev A, Adesida I, Dabiran A M, Wowchak A M, Chow P P, Lee J W 2004 Electron. Lett. 40 771
Google Scholar
[29] Liu J, Zhou Y, Zhu J, Lau K M, Chen K J 2006 IEEE Electr. Device. L. 35 671
Google Scholar
[30] Khan M, Alim M A, C Gaquière 2021 Microelectron. Eng. 238 111508
Google Scholar
[31] Miah M I, Gray E M 2012 J. Phys. Chem. Solids. 73 444
Google Scholar
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