搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

纤锌矿AlGaN/AlN/GaN异质结构中光学声子散射影响的电子迁移率

杨福军 班士良

引用本文:
Citation:

纤锌矿AlGaN/AlN/GaN异质结构中光学声子散射影响的电子迁移率

杨福军, 班士良

Influence of optical-phonon scattering on electron mobility in wurtzite AlGaN/AlN/GaN heterostructures

Yang Fu-Jun, Ban Shi-Liang
PDF
导出引用
  • 对含有AlN插入层纤锌矿AlxGa1-xN/AlN/GaN异质结构,考虑有限厚势垒和导带弯曲的实际 异质结势,同时计入自发极化和压电极化效应产生的内建电场作用,采用数值自洽求解薛定谔方程和泊松方程, 获得二维电子气(2DEG)中电子的本征态和本征能级.依据介电连续模型和Loudon单轴晶体模型, 用转移矩阵法分析该体系中可能存在的光学声子模及三元混晶效应.进一步, 在室温下计及各种可能存在的光学声子散射,推广雷-丁平衡方程方法,讨论2DEG分布及二维电子迁移率的 尺寸效应和三元混晶效应.结果显示: AlN插入层厚度和AlxGa1-xN势垒层中Al组分的增加均会 增强GaN层中的内建电场强度,致使2DEG的分布更靠近异质结界面,使界面光学声子强于其他类型的 光学声子对电子的散射作用而成为影响电子迁移率的主导因素.适当调整AlN插入层的厚度和Al组分, 可获得较高的电子迁移率.
    Adopting a numerical method of solving self-consistently the Schrdinger equation and Poisson equation through taking into account the realistic heterostructure potential, which includes the influences of energy band bending and the finite thickness of barriers, and through considering the built-in electric field induced by spontaneous and piezoelectric polarization, the eigenstates and eigenenergies of electrons in two-dimensional electron gas (2DEG) are obtained for wurtzite AlxGa1-xN/AlN/GaN heterostructures with an inserted AlN layer. Based on the continuous dielectric model and the Loudon's uniaxial crystal model, optical-phonon modes and their ternary mixed crystals effect are discussed using the transfer matrix method. Furthermore, the Lei-Ting balance equation is extended in order to investigate the distribution of 2DEG and its size effect as well as ternary mixed crystals effect on electron mobility, which under the influence of each branch of optical-phonon modes are analyzed at room temperature. The results show that the increases of the thickness of inserted AlN layer and the Al component of AlxGa1-xN in the barrier enhance the built-in electric field in the GaN layer, leading 2DEG to be much closer to the interface of a heterostructure. In addition, it can also be found that the scattering from the interface phonons is stronger than from other optical-phonons, the interface phonons play a dominant role in the total mobility. A higher electron mobility can be obtained by adjusting appropriately the thickness of inserted AlN layer and Al component.
    • 基金项目: 国家自然科学基金(批准号: 60966001)、内蒙古自治区自然科学基金重点项目(批准号: 20080404Zd02) 和高等学校博士学科点专项科研基金(批准号: 20070126001)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60966001), the Key Program of Natural Science Foundation of Inner Mongolia Autonomous Region, China (Grant No. 20080404Zd02), and the Specialized Research Foundation for the Doctoral Program of Higher Education of China (Grant No. 20070126001).
    [1]
    [2]

    Gaska R, Shur M S, Bykhovski A D, Orlov A O, Snider G L 1999 Appl. Phys. Lett. 74 287

    [3]

    Smorchkova I P, Elsass C R, Ibbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S, Mishra U K 1999 J. Appl. Phys. 86 4520

    [4]
    [5]
    [6]

    Tao Y Q, Chen D J, Kong Y C, Shen B, Xie Z L, Han P, Zhang R, Zheng Y D 2006 J. Electron. Mater. 35 722

    [7]
    [8]

    Hsu L, Walukiewicz W 1997 Phys. Rev. B 56 1520

    [9]

    Gaska R, Yang J W, Osingsky A, Chen Q, Khan M A, Orlov A O, Snider G L, Shur M S 1998 Appl. Phys. Lett. 72 707

    [10]
    [11]

    Gurusinghe M N, Davidsson S K, Andersson T G 2005 Phys. Rev. B 72 045316

    [12]
    [13]
    [14]

    Shen L, Heikman S, Moran B, Coffie, Zhang N D, Buttari D, Smorchkova I P, Keller S, DenBaars S P, Mishra U K 2001 IEEE Electron Dev. Lett. 22 457

    [15]

    Hsu L, Walukiewicz W 2001 J. Appl. Phys. 89 1783

    [16]
    [17]

    Smorchkova I P, Chen L, Mates T, Shen L, Heikman S, Moran B, Keller S, DenBaars S P, Speck J S, Mishra U K 2001 J. Appl. Phys. 90 5196

    [18]
    [19]
    [20]

    Miyoshi M, Ishikawa H, Egawa T, Asai K, Mouri M, Shibata T, Tanaka M, Oda O 2004 Appl. Phys. Lett. 85 1710

    [21]

    Tlek R, Ilgaz A, Gkden S, Teke A, ztrk M K, Kasap M, z\c{celik S, Arslan E, zbay E 2009 J. Appl. Phys. 105 013707

    [22]
    [23]

    Miyoshi M, Egawa T, Ishikkawa H 2005 J. Appl. Phys. 98 63713

    [24]
    [25]

    Lee B C, Kim K W, Stroscio M A, Dutta M 1998 Phys. Rev. B 58 4860

    [26]
    [27]

    Komirenko S M, Kim K W, Stroscio M A, Dutta M 2000 Phys. Rev. B 61 2034

    [28]
    [29]
    [30]

    Qu Y, Ban S L 2009 Eur. Phys. J. B 69 321

    [31]

    Qu Y, Ban S L 2010 Acta Phys. Sin. 59 4863 (in Chinese) [屈媛, 班士良 2010 物理学报 59 4863]

    [32]
    [33]

    Qu Y, Ban S L 2011 J. Appl. Phys. 110 013722

    [34]
    [35]

    Chu R M, Zhou Y G, Zheng Y D, Han P, Shen B, Gu S L 2001 Appl. Phys. Lett. 79 2270

    [36]
    [37]
    [38]

    Li J M, L Y W, Li D B, Han X X, Zhu Q S, Liu X L, Wang Z G 2004 J. Vac. Sci. Technol. B 22 2568

    [39]

    L J T, Cao J C 2005 J. Appl. Phys. 97 033502

    [40]
    [41]

    Hayers W, Loudon R 1964 Scattering of Light by Crystals (New York: Wiley) p169

    [42]
    [43]
    [44]

    Yu S G, Kim K W, Bergman L, Dutta M, Stroscio M A, Zavada J M 1998 Phys. Rev. B 58 15283

    [45]

    Holtz M, Prokofyeva T, Seon M, Copeland K, Vanbuskirk J, Williams S, Nikishin S A, Tretyakov V, Temkin H 2001 J. Appl. Phys. 89 7977

    [46]
    [47]
    [48]

    Wang X F, da Cunha Lima I C, Lei X L 1998 Phys. Rev. B 58 12609

    [49]

    Bungaro C, Rapcewicz K, Bernholc J 2000 Phys. Rev. B 61 6720

    [50]
    [51]

    Demangeot F, Groenen J, Frandon J, Renucci M A, Briot O, Clur S, Aulombard R L 1998 Appl. Phys. Lett. 72 2674

    [52]
    [53]
    [54]

    Wu J 2009 J. Appl. Phys. 106 011101

    [55]
    [56]

    Zoroddu A, Bernardini F, Ruggerone P, Fiorentini V 2001 Phys. Rev. B 64 045208

    [57]

    Vurgaftman I, Meyer J R 2003 J. Appl. Phys. 94 3675

    [58]
    [59]
    [60]

    Yu S G, Kim K W, Stroscio M A, Iafrate G J, Sun J P, Hsddad G I 1997 J. Appl. Phys. 82 3363

    [61]
    [62]

    Lepkowski S P, Teisseyre H, Suski T, Perlin P, Grandjean N, Massies J 2001 Appl. Phys. Lett. 79 1483

    [63]

    Wagner J M, Bechstedt F 2002 Phys. Rev. B 66 115202

  • [1]
    [2]

    Gaska R, Shur M S, Bykhovski A D, Orlov A O, Snider G L 1999 Appl. Phys. Lett. 74 287

    [3]

    Smorchkova I P, Elsass C R, Ibbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S, Mishra U K 1999 J. Appl. Phys. 86 4520

    [4]
    [5]
    [6]

    Tao Y Q, Chen D J, Kong Y C, Shen B, Xie Z L, Han P, Zhang R, Zheng Y D 2006 J. Electron. Mater. 35 722

    [7]
    [8]

    Hsu L, Walukiewicz W 1997 Phys. Rev. B 56 1520

    [9]

    Gaska R, Yang J W, Osingsky A, Chen Q, Khan M A, Orlov A O, Snider G L, Shur M S 1998 Appl. Phys. Lett. 72 707

    [10]
    [11]

    Gurusinghe M N, Davidsson S K, Andersson T G 2005 Phys. Rev. B 72 045316

    [12]
    [13]
    [14]

    Shen L, Heikman S, Moran B, Coffie, Zhang N D, Buttari D, Smorchkova I P, Keller S, DenBaars S P, Mishra U K 2001 IEEE Electron Dev. Lett. 22 457

    [15]

    Hsu L, Walukiewicz W 2001 J. Appl. Phys. 89 1783

    [16]
    [17]

    Smorchkova I P, Chen L, Mates T, Shen L, Heikman S, Moran B, Keller S, DenBaars S P, Speck J S, Mishra U K 2001 J. Appl. Phys. 90 5196

    [18]
    [19]
    [20]

    Miyoshi M, Ishikawa H, Egawa T, Asai K, Mouri M, Shibata T, Tanaka M, Oda O 2004 Appl. Phys. Lett. 85 1710

    [21]

    Tlek R, Ilgaz A, Gkden S, Teke A, ztrk M K, Kasap M, z\c{celik S, Arslan E, zbay E 2009 J. Appl. Phys. 105 013707

    [22]
    [23]

    Miyoshi M, Egawa T, Ishikkawa H 2005 J. Appl. Phys. 98 63713

    [24]
    [25]

    Lee B C, Kim K W, Stroscio M A, Dutta M 1998 Phys. Rev. B 58 4860

    [26]
    [27]

    Komirenko S M, Kim K W, Stroscio M A, Dutta M 2000 Phys. Rev. B 61 2034

    [28]
    [29]
    [30]

    Qu Y, Ban S L 2009 Eur. Phys. J. B 69 321

    [31]

    Qu Y, Ban S L 2010 Acta Phys. Sin. 59 4863 (in Chinese) [屈媛, 班士良 2010 物理学报 59 4863]

    [32]
    [33]

    Qu Y, Ban S L 2011 J. Appl. Phys. 110 013722

    [34]
    [35]

    Chu R M, Zhou Y G, Zheng Y D, Han P, Shen B, Gu S L 2001 Appl. Phys. Lett. 79 2270

    [36]
    [37]
    [38]

    Li J M, L Y W, Li D B, Han X X, Zhu Q S, Liu X L, Wang Z G 2004 J. Vac. Sci. Technol. B 22 2568

    [39]

    L J T, Cao J C 2005 J. Appl. Phys. 97 033502

    [40]
    [41]

    Hayers W, Loudon R 1964 Scattering of Light by Crystals (New York: Wiley) p169

    [42]
    [43]
    [44]

    Yu S G, Kim K W, Bergman L, Dutta M, Stroscio M A, Zavada J M 1998 Phys. Rev. B 58 15283

    [45]

    Holtz M, Prokofyeva T, Seon M, Copeland K, Vanbuskirk J, Williams S, Nikishin S A, Tretyakov V, Temkin H 2001 J. Appl. Phys. 89 7977

    [46]
    [47]
    [48]

    Wang X F, da Cunha Lima I C, Lei X L 1998 Phys. Rev. B 58 12609

    [49]

    Bungaro C, Rapcewicz K, Bernholc J 2000 Phys. Rev. B 61 6720

    [50]
    [51]

    Demangeot F, Groenen J, Frandon J, Renucci M A, Briot O, Clur S, Aulombard R L 1998 Appl. Phys. Lett. 72 2674

    [52]
    [53]
    [54]

    Wu J 2009 J. Appl. Phys. 106 011101

    [55]
    [56]

    Zoroddu A, Bernardini F, Ruggerone P, Fiorentini V 2001 Phys. Rev. B 64 045208

    [57]

    Vurgaftman I, Meyer J R 2003 J. Appl. Phys. 94 3675

    [58]
    [59]
    [60]

    Yu S G, Kim K W, Stroscio M A, Iafrate G J, Sun J P, Hsddad G I 1997 J. Appl. Phys. 82 3363

    [61]
    [62]

    Lepkowski S P, Teisseyre H, Suski T, Perlin P, Grandjean N, Massies J 2001 Appl. Phys. Lett. 79 1483

    [63]

    Wagner J M, Bechstedt F 2002 Phys. Rev. B 66 115202

  • [1] 郝蕊静, 郭红霞, 潘霄宇, 吕玲, 雷志锋, 李波, 钟向丽, 欧阳晓平, 董世剑. AlGaN/GaN高电子迁移率晶体管器件中子位移损伤效应及机理. 物理学报, 2020, 69(20): 207301. doi: 10.7498/aps.69.20200714
    [2] 张雪冰, 刘乃漳, 姚若河. AlGaN/GaN高电子迁移率晶体管中二维电子气的极化光学声子散射. 物理学报, 2020, 69(15): 157303. doi: 10.7498/aps.69.20200250
    [3] 刘静, 王琳倩, 黄忠孝. 基于凹槽结构抑制AlGaN/GaN高电子迁移率晶体管电流崩塌效应. 物理学报, 2019, 68(24): 248501. doi: 10.7498/aps.68.20191311
    [4] 周幸叶, 吕元杰, 谭鑫, 王元刚, 宋旭波, 何泽召, 张志荣, 刘庆彬, 韩婷婷, 房玉龙, 冯志红. 基于脉冲方法的超短栅长GaN基高电子迁移率晶体管陷阱效应机理. 物理学报, 2018, 67(17): 178501. doi: 10.7498/aps.67.20180474
    [5] 王冲, 赵梦荻, 裴九清, 何云龙, 李祥东, 郑雪峰, 毛维, 马晓华, 张进成, 郝跃. AlGaN/GaN双异质结F注入增强型高电子迁移率晶体管. 物理学报, 2016, 65(3): 038501. doi: 10.7498/aps.65.038501
    [6] 刘阳, 柴常春, 于新海, 樊庆扬, 杨银堂, 席晓文, 刘胜北. GaN高电子迁移率晶体管强电磁脉冲损伤效应与机理. 物理学报, 2016, 65(3): 038402. doi: 10.7498/aps.65.038402
    [7] 谷卓, 班士良. 纤锌矿结构ZnO/MgxZn1-xO量子阱中带间光吸收的尺寸效应和三元混晶效应. 物理学报, 2014, 63(10): 107301. doi: 10.7498/aps.63.107301
    [8] 于遥, 张晶思, 陈黛黛, 郭睿倩, 谷至华. PECVD分层结构对提高氢化非晶硅TFT迁移率的影响. 物理学报, 2013, 62(13): 138501. doi: 10.7498/aps.62.138501
    [9] 吕玲, 张进成, 李亮, 马晓华, 曹艳荣, 郝跃. 3 MeV质子辐照对AlGaN/GaN高电子迁移率晶体管的影响. 物理学报, 2012, 61(5): 057202. doi: 10.7498/aps.61.057202
    [10] 余晨辉, 罗向东, 周文政, 罗庆洲, 刘培生. 新型双异质结高电子迁移率晶体管的电流崩塌效应研究. 物理学报, 2012, 61(20): 207301. doi: 10.7498/aps.61.207301
    [11] 马骥刚, 马晓华, 张会龙, 曹梦逸, 张凯, 李文雯, 郭星, 廖雪阳, 陈伟伟, 郝跃. AlGaN/GaN高电子迁移率晶体管中kink效应的半经验模型. 物理学报, 2012, 61(4): 047301. doi: 10.7498/aps.61.047301
    [12] 顾江, 王强, 鲁宏. AlGaN/GaN 高速电子迁移率晶体管器件电流坍塌效应与界面热阻和温度的研究. 物理学报, 2011, 60(7): 077107. doi: 10.7498/aps.60.077107
    [13] 王鑫华, 赵妙, 刘新宇, 蒲颜, 郑英奎, 魏珂. AlGaN/AlN/GaN高电子迁移率器件的电容电压特性的经验拟合. 物理学报, 2011, 60(4): 047101. doi: 10.7498/aps.60.047101
    [14] 王晓艳, 张鹤鸣, 宋建军, 马建立, 王冠宇, 安久华. 应变Si/(001)Si1-xGex电子迁移率. 物理学报, 2011, 60(7): 077205. doi: 10.7498/aps.60.077205
    [15] 李斌, 刘红侠, 袁博, 李劲, 卢凤铭. 应变Si/Si1-xGex n型金属氧化物半导体场效应晶体管反型层中的电子迁移率模型. 物理学报, 2011, 60(1): 017202. doi: 10.7498/aps.60.017202
    [16] 王冲, 全思, 马晓华, 郝跃, 张进城, 毛维. 增强型AlGaN/GaN高电子迁移率晶体管高温退火研究. 物理学报, 2010, 59(10): 7333-7337. doi: 10.7498/aps.59.7333
    [17] 屈媛, 班士良. 纤锌矿氮化物量子阱中光学声子模的三元混晶效应. 物理学报, 2010, 59(7): 4863-4873. doi: 10.7498/aps.59.4863
    [18] 林若兵, 王欣娟, 冯 倩, 王 冲, 张进城, 郝 跃. AlGaN/GaN高电子迁移率晶体管肖特基高温退火机理研究. 物理学报, 2008, 57(7): 4487-4491. doi: 10.7498/aps.57.4487
    [19] 魏 巍, 郝 跃, 冯 倩, 张进城, 张金凤. AlGaN/GaN场板结构高电子迁移率晶体管的场板尺寸优化分析. 物理学报, 2008, 57(4): 2456-2461. doi: 10.7498/aps.57.2456
    [20] 郑中山, 刘忠立, 张国强, 李 宁, 范 楷, 张恩霞, 易万兵, 陈 猛, 王 曦. 埋氧层注氮工艺对部分耗尽SOI nMOSFET特性的影响. 物理学报, 2005, 54(1): 348-353. doi: 10.7498/aps.54.348
计量
  • 文章访问数:  7218
  • PDF下载量:  762
  • 被引次数: 0
出版历程
  • 收稿日期:  2011-04-20
  • 修回日期:  2012-04-28
  • 刊出日期:  2012-04-20

/

返回文章
返回