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本文系统研究了AlGaN/GaN基高速电子迁移率晶体管器件界面热阻和工作温度对器件在高功率下的电流坍塌效应的影响规律.研究发现低漏极电压下热电子是导致负微分输出电导的重要因素,器件工作温度变高会使负微分输出电导减小.高漏极电压下自加热效应是导致电流坍塌的一个重要因素.随着界面热阻的增加,器件跨导降低,阈值电压增大.同时,由于工作环境温度的增高,器件随之温度增高,载流子迁移率会显著降低. 最终这两种因素会引起AlGaN/GaN基高速电子迁移率晶体管器件显著的电流坍塌效应,从而降低了器件整体性能.
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关键词:
- AlGaN/GaN HEMT 器件 /
- 热电子效应 /
- 自加热效应 /
- 电流坍塌效应
The effects of operating temperature and the interfacial thermal resistance on device are researched by using a two-dimensional numerical simulator. A comparison between the simulated results and the experiment data demonstrates that hot electrons make a significant contribution to the negative differential output conductance which will increase with the increase of the work temperature under low drain voltage, and under upper drain voltage, the self-heating effect is an important factor to the current collapse which will become more serious with the work temperature and interfacial thermal resistance inereasing.-
Keywords:
- AlGaN/GaN HEMT devices /
- hot electron effect /
- self-heating effect /
- current collapse effect
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[16] Hao L C, Duan J L, 2010 Acta. Phys. Sin. 59 2746(in Chinese)[郝立超、段俊丽 2010 物理学报 59 2746]
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[19] Bykhovski A D, Gaska R, Shur M S 1998 Appl. Phys. Lett. 73 24
[20] Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D, Hao Y 2009 Acta. Phys. Sin. 58 536 (in Chinese) [刘林杰、岳远征、张进城、马晓华、董作典、郝 跃 2009 物理学报 58 536]
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[22] Valentin O Turina, Alexander A 2006 J. Appl. Phys. 100 054501
[23] Vitusevich S A, Danylyuk S V, Klein N, Petrychuk M V, Avksentyev A Yu, Sokolov V N, Kochelap V A, Belyaev A E, Tilak V, Smart J, Vertiatchikh A, Eastman L F 2003 Appl. Phys. Lett. 82 748
[24] Gaska R, Osinsky A, Yang J W, Shur M S 1998 IEEE Elect. Dev. Lett. 19 89
[25] Feng Q, Tian Y, Bi Z W, Yue Y Z, Ni J Y, Zhang J C, Hao Y, Yang L A 2009 Chin. Phys. B 18 3014
[26] Fan L, Hao Y, Zhao Y F, Zhang J C, Gao Z Y, Li P X 2009 Chin. Phys. B 18 2912
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[1] Gu W P, Hao Y, Zhang J C, Wang C, Feng Q, Ma X H 2009 Acta. Phys. Sin. 58 0511 (in Chinese) [谷文萍、郝 跃、张进城、王 冲、冯 倩、马晓华 2009 物理学报 58 511]
[2] Hu W D, Chen X S, Quan Z J, Zhang M X, Huang Y, Xia C S, Lu W, Ye D P 2007 J. Appl. Phys. 102 034502
[3] Ding G J, Guo L W, Xing Z G, Chen Y, Xu P Q, Jia H Q, Zhou J M, Chen H 2010 Acta Phys. Sin. 59 5724 (in Chinese) [丁国建、郭丽伟、邢志刚、陈 耀、徐培强、贾海强、周均铭、陈 弘 2010 物理学报 59 5724]
[4] Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Yuan H J 2006 Appl. Phys. Lett. 89 243501
[5] Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Ye P D 2006 J. Appl. Phys. 100 074501
[6] Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W, Han Y J, Luo Y 2008 Acta Phys. Sin. 57 7238 (in Chinese) [席光义、任 凡、郝智彪、汪 莱、李洪涛、江 洋、赵维韩、彦 军、罗 毅 2008 物理学报 57 7238]
[7] Simin G, Yang J Z, Koudymov A, Adivarahan V, Yang J, Khan M A 2006 Appl. Phys. Lett. 89 033510
[8] Wang L, Hu W D, Chen X S, Lu W 2010 J. Appl. Phys. 108 054501
[9] Wang C, Quan S, Zhang J F, Hao Y, Feng Q, Chen J F 2009 Acta. Phys. Sin. 58 1966 (in Chinese) [王 冲、全 思、张金凤、郝 跃、冯 倩、陈军峰 2009 物理学报 58 1966]
[10] Hu W D, Chen X S, Zhou X C, Quan Z J, Lu W 2006 Microelectronics Journal 37 613
[11] Braga N, Mickevicius R, Gaska R, Hu X, Shur M S, Asif K M, Simin G, Yang J 2004 J. Appl. Phys. 95 6409
[12] Wang L, Hu W D, Chen X S, Lu W 2010 Acta. Phys. Sin. 59 5730 (in Chinese)[王 林、胡伟达、陈效双、陆 卫 2010 物理学报 59 5730]
[13] Brag N, Mickevicius R, Gaska R, Shur M S, Asif K M, Simin G 2004 Appl. Phys. Lett. 85 4780
[14] Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys. 105 084502
[15] Wei W, Lin R B, Feng Q, HaoY 2008 Acta Phys. Sin. 57 467(in Chinese)[魏 巍、林若兵、冯 倩、郝 跃 2008 物理学报 57 467]
[16] Hao L C, Duan J L, 2010 Acta. Phys. Sin. 59 2746(in Chinese)[郝立超、段俊丽 2010 物理学报 59 2746]
[17] Vetury R, Naiqain Zhang Q, Stacia Keller, Mishra K U 2001 IEEE Trans.Electron Devices 48 560
[18] Kong Y C, Zheng Y D, Zhou C H, Deng Y Z , Gu S L, Shen B, Zhang R, Han P, Jiang R L, Shi Y 2004 Acta. Phys. Sin. 53 2320(in Chinese)[孔月婵、郑有窦、周春红、邓永桢、顾书林、沈 波、张 荣、韩 平、江若琏、施 毅 2004 物理学报 53 2320]
[19] Bykhovski A D, Gaska R, Shur M S 1998 Appl. Phys. Lett. 73 24
[20] Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D, Hao Y 2009 Acta. Phys. Sin. 58 536 (in Chinese) [刘林杰、岳远征、张进城、马晓华、董作典、郝 跃 2009 物理学报 58 536]
[21] Yu L S, Ying Q J, Qiao D, Lau S S, Boutros K S, Redwing J M 1998 Appl. Phys. Lett. 73 26
[22] Valentin O Turina, Alexander A 2006 J. Appl. Phys. 100 054501
[23] Vitusevich S A, Danylyuk S V, Klein N, Petrychuk M V, Avksentyev A Yu, Sokolov V N, Kochelap V A, Belyaev A E, Tilak V, Smart J, Vertiatchikh A, Eastman L F 2003 Appl. Phys. Lett. 82 748
[24] Gaska R, Osinsky A, Yang J W, Shur M S 1998 IEEE Elect. Dev. Lett. 19 89
[25] Feng Q, Tian Y, Bi Z W, Yue Y Z, Ni J Y, Zhang J C, Hao Y, Yang L A 2009 Chin. Phys. B 18 3014
[26] Fan L, Hao Y, Zhao Y F, Zhang J C, Gao Z Y, Li P X 2009 Chin. Phys. B 18 2912
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