基于铝纳米颗粒修饰的非晶氧化镓薄膜日盲紫外探测器

况丹; 徐爽; 史大为; 郭建; 喻志农

doi:10.7498/aps.72.20221476

摘要

近年来, 宽带隙半导体材料氧化镓在日盲紫外探测领域的应用引起了广泛关注. 本文基于溶液法制备了非晶氧化镓薄膜, 采用紫外光退火的方式降低了薄膜的制备温度, 并且通过铝颗粒修饰氧化镓薄膜表面, 提升了氧化镓紫外探测器的性能. 紫外退火的方式可将氧化镓薄膜的制备温度降至300 ℃, 有望实现柔性器件的制备. 当沉积铝膜厚度在3—5 nm时, 可获得分布均匀、直径为2—3 nm的铝颗粒, 经修饰的氧化镓薄膜表现出优秀的光电响应性能和日盲探测特性. 在254 nm光照下, 最大光暗电流比可达2.55×10⁴, 在紫外波段的抑制比I_{254 nm}/I_{365 nm}为2.2×10⁴. 最佳的探测器响应度和探测率分别为0.771 A/W和1.13×10¹¹ Jones, 相比于未做修饰的氧化镓紫外探测器提升了约34倍和36倍. 然而, 铝纳米颗粒的修饰也会引入部分缺陷态, 导致氧化镓光电探测器响应下降时间的增大.

关键词:

Abstract

Gallium oxide (Ga₂O₃) as a wide bandgap semiconductor material has attracted much attention in the field of solar blind ultraviolet photodetection recently. Localized surface plasmon resonance is considered an effective way to improve the performance of optoelectronic devices by decorating the materials with metal particles. Al nanoparticle is a potential candidate for ultraviolet photodetectors because its suitable resonance wavelength is located in the ultraviolet wavelength range. In this work, the preparation temperature of the Ga₂O₃ thin film is reduced by ultraviolet photo-annealing, and the amorphous Ga₂O₃ thin film is prepared by using the solution method. In addition, aluminum (Al) nanoparticles are used to decorate the surface of Ga₂O₃ thin film through thermal evaporation of aluminum film and then annealing, which improves the optoelectrical performance in the solar-blind wavelength spectrum. The X-ray diffraction (XRD) is employed to demonstrate the amorphous Ga₂O₃ thin film. The surface roughness and the diameters of Al nanoparticles are analyzed by atomic force microscope (AFM). When the thickness of the deposited Al layer is about 3–5 nm, Al particles with the diameters in a range of 2–3 nm can be obtained. When the thickness of the deposited Al layer is more than 7 nm, Al nanoparticles turn into the particles with non-identical diameters and distribute in the form of agglomeration. Transmittance spectrum and absorption spectrum are employed to characterize the optical properties. The bandgaps of different samples are obtained, and the results are consistent with the theoretical ones. The Ga₂O₃ thin film shows excellent optoelectrical performance and solar blind rejection ratio. Under 254 nm illumination, the maximum photo-to-dark current ratio is 2.55×10⁴, and the rejection ratio of I_{254 nm}/I_{365 nm} is 2.2×10⁴. The best responsivity and detectivity of prepared samples are 0.771 A/W and 1.13×10¹¹ Jones, which are about 34 times and 36 times higher than those without Al decoration. The improvement is attributed to the scattering effect of surface Al nanoparticles for illumination, which enhances the Ga₂O₃ thin film absorption of solar blind ultraviolet light. Meanwhile, owing to the localized surface plasma resonance, the local electromagnetic fields generated near the Al nanoparticles promote the transfer of carriers in the film. Furthermore, the point about how the Al nanoparticles decorated on the surface of Ga₂O₃ thin film influence the time response is also discussed in this work. As a result, the introduction of defect states will lead to an increase of fall time due to the Al deposition. In this work, the effect of Al nanoparticles decoration on the optoelectrical performance of amorphous Ga₂O₃ thin film solar blind ultraviolet photodetectors is studied based on a simple preparation, which provides a possible pathway for developing the flexible solar blind electronic devices in the future.

Keywords:

作者及机构信息

1.
北京理工大学光电学院, 北京市混合现实与先进显示技术工程研究中心, 薄膜与显示实验室, 北京　100081

2.
重庆京东方显示技术有限公司, 重庆　400714

通信作者: 喻志农, znyu@bit.edu.cn

基金项目: 国家自然科学基金(批准号: 61874009)资助的课题.

Authors and contacts

1.
Thin Film and Display Laboratory, Beijing Engineering Research Center for Mixed Reality and Advanced Display Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China

2.
Chongqing BOE Display Technology Co., Ltd., Chongqing 400714, China

Corresponding author: Yu Zhi-Nong, znyu@bit.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61874009).

文章全文 : translate this paragraph

参考文献

[1]	Chen H, Liu K, Hu L, Al-Ghamdi A A, Fang X 2015 Mater. Today 18 493 Google Scholar
[2]	Razeghi M 2002 Proc. IEEE 90 1006 Google Scholar
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施引文献

图 1 铝纳米颗粒修饰非晶Ga₂O₃探测器结构示意图

Fig. 1. Schematic device structure of the Al nanoparticles decorated amorphous Ga₂O₃ thin film photodetector.

下载: 全尺寸图片幻灯片

图 2 (a) Ga₂O₃薄膜XRD图谱; (b) Ga₂O₃薄膜XPS能谱

Fig. 2. (a) XRD patterns of Ga₂O₃ thin film; (b) XPS spectrum of Ga₂O₃ thin film.

下载: 全尺寸图片幻灯片

图 3 Ga₂O₃薄膜表面AFM图　(a) 未沉积铝颗粒; (b) 沉积3 nm铝; (c) 沉积5 nm铝; (d) 沉积7 nm铝

Fig. 3. The AFM images of Ga₂O₃: (a) Without Al Nanoparticles; (b) with 3 nm Al layer; (c) with 5 nm Al layer; (d) with 7 nm Al layer.

下载: 全尺寸图片幻灯片

图 4 (a) 不同铝厚度下Ga₂O₃薄膜透过率曲线以及(b) (αhv)²-hv 曲线

Fig. 4. (a) Transmittance spectra and (b) curves of (αhv)²-hv of Ga₂O₃ thin film with different Al thickness.

下载: 全尺寸图片幻灯片

图 5 未沉积铝和沉积不同厚度铝Ga₂O₃紫外探测器的I-V特性曲线　(a) 暗电流; (b) 254 nm光照下的光电流; (c) 365 nm光照下的光电流

Fig. 5. Electrical performance of Ga₂O₃ photodetectors with/without Al decoration: (a) Dark current; (b) photocurrent under 254 nm illumination; (c) photocurrent under 365 nm illumination.

下载: 全尺寸图片幻灯片

图 6 铝纳米颗粒/Ga₂O₃薄膜界面处的能带与电子转移机制

Fig. 6. Schematic illustration of the energy band and electron transfer mechanisms at Al nanoparticles/Ga₂O₃ interface.

下载: 全尺寸图片幻灯片

图 7 Ga₂O₃紫外探测器的时间响应曲线　(a) 未沉积铝; (b) 沉积3 nm铝; (c) 沉积5 nm铝; (d) 沉积7 nm铝

Fig. 7. Time response curves of Ga₂O₃ photodetectors: (a) Without Al; (b) with 3 nm Al layer; (c) with 5 nm Al layer; (d) with 7 nm Al layer.

下载: 全尺寸图片幻灯片

表 1 20 V偏压下沉积3 nm /5 nm /7 nm以及未沉积样品的电学参数

Table 1. Electrical parameters of samples with 3 nm /5 nm /7 nm Al and without Al under 20 V bias.

铝层厚度/nm	I_dark/A	I_{254 nm}/A	I_{365 nm}/A	I_{254 nm}/I_dark	I_{254 nm}/I_{365 nm}	R_{254 nm}/ (A·W^–1)	R_{365 nm}/ (A·W^–1)	R_{254 nm}/R_{365 nm}	$D_{\rm 254\;nm}^*$/Jones
未沉积	1.51×10^–10	1.15×10^–7	1.74×10^–10	7.62×10²	6.61×10²	0.0228	4.56×10^–6	4993	3.13×10⁹
3	1.52×10^–10	3.88×10^–6	1.79×10^–10	2.55×10⁴	2.17×10⁴	0.771	5.36×10^–6	1.44×10⁵	1.13×10¹¹
5	1.34×10^–10	3.32×10^–6	1.51×10^–10	2.48×10⁴	2.20×10⁴	0.659	3.37×10^–6	1.95×10⁵	1.03×10¹¹
7	3.33×10^–10	6.88×10^–5	4.46×10^–7	2.07×10⁵	1.54×10²	13.647	0.0884	154	1.35×10¹²

下载: 导出CSV

[1]	Chen H, Liu K, Hu L, Al-Ghamdi A A, Fang X 2015 Mater. Today 18 493 Google Scholar
[2]	Razeghi M 2002 Proc. IEEE 90 1006 Google Scholar
[3]	Sang L, Liao M, Sumiya M 2013 Sensors (Basel) 13 10482 Google Scholar
[4]	Liao M, Wang X, Teraji T, Koizumi S, Koide Y 2010 Phys. Rev. B 81 033304 Google Scholar
[5]	Cicek E, McClintock R, Cho C Y, Rahnema B, Razeghi M 2013 Appl. Phys. Lett. 103 051102 Google Scholar
[6]	Suzuki R, Nakagomi S, Kokubun Y, Arai N, Ohira S 2009 Appl. Phys. Lett. 94 222102 Google Scholar
[7]	Yang J L, Liu K W, Shen D Z 2017 Chin. Phys. B 26 047308 Google Scholar
[8]	Wu Z H, Qian L X, Sheng T, Zhang Y Y, Liu X Z 2019 IEEE International Conference on Electron Devices & Solid-state Circuits Xi'an China, June 12–14, 2019 p82
[9]	Chang K W, Wu J J 2005 Adv. Mater. 17 241 Google Scholar
[10]	Guo D Y, Wu Z P, Li P G, An Y H, Liu H, Guo X C, Yan H, Wang G F, Sun C L, Li L H, Tang W H 2014 Opt. Mater. Express 4 1067 Google Scholar
[11]	Yu F P, Ou S L, Wuu D S 2015 Opt. Mater. Express 5 1240 Google Scholar
[12]	He H Y, Orlando R, Blanco M A, Pandey R, Amzallag E, Baraille I, Rérat M 2006 Phys. Rev. B 74 195123 Google Scholar
[13]	Gottschalch V, Merker S, Blaurock S, Kneiß M, Teschner U, Grundmann M, Krautscheid H 2019 J. Cryst. Growth 510 76 Google Scholar
[14]	Pearton S J, Yang J C, Cary P H, Ren F, Kim J, Tadjer M J, Mastro M A 2018 Appl. Phys. Rev. 5 011301 Google Scholar
[15]	Dong L P, Yu J G, Jia R X, Hu J C, Zhang Y M, Sun J W 2019 Opt. Mater. Express 9 1191 Google Scholar
[16]	Qian L X, Wang Y, Wu Z H, Sheng T, Liu X Z 2017 Vacuum 140 106 Google Scholar
[17]	Liu X Z, Guo P, Sheng T, Qian L X, Zhang W L, Li Y R 2016 Opt. Mater. 51 203 Google Scholar
[18]	Alema F, Hertog B, Ledyaev O, Volovik D, Thoma G, Miller R, Osinsky A, Mukhopadhyay P, Bakhshi S, Ali H, Schoenfeld W V 2017 Phys. Status Solidi A 214 1600688 Google Scholar
[19]	Wang H, Chen H, Li L, Wang Y, Su L, Bian W, Li B, Fang X 2019 J. Phys. Chem. Lett. 10 6850 Google Scholar
[20]	Mayer K M, Hafner J H 2011 Chem. Rev. 111 3828 Google Scholar
[21]	Zhang Y, Lin N, Li Y, Wang X, Wang H, Kang J, Wilks R, Bar M, Mu R 2016 Sci. Rep. 6 23106 Google Scholar
[22]	刘伦涛 2020 博士学位论文 (济南: 山东大学) Liu L T 2020 Ph. D. Dissertation (Jinan: Shandong University) (in Chinese)
[23]	An Y, Chu X, Huang Y, Zhi Y, Guo D, Li P, Wu Z, Tang W 2016 Prog. Nat. Sci. 26 65 Google Scholar
[24]	Shi X, Yang Z, Yin S, Zeng H 2016 Mater. Technol. 31 544 Google Scholar
[25]	Chang Y T, Chuang T H, Tsai M W, Chen L C, Lee S C 2007 J. Appl. Phys. 101 054305 Google Scholar
[26]	Rafique S, Han L, Zhao H 2016 Phys. Status Solidi A 213 1002 Google Scholar
[27]	Cui S, Mei Z, Hou Y, Sun M, Chen Q, Liang H, Zhang Y, Bai X, Du X 2018 Sci Chin.-Phys. Mech. Astron. 61 107021 Google Scholar
[28]	Zhao B, Wang F, Chen H Y, Zheng L X, Su L X, Zhao D X, Fang X S 2017 Adv. Funct. Mater. 27 1700264 Google Scholar
[29]	Guo D Y, Su Y L, Shi H Z, Li P G, Zhao N, Ye J H, Wang S L, Liu A P, Chen Z W, Li C R, Tang W H 2018 ACS Nano 12 12827 Google Scholar
[30]	Zhang D, Zheng W, Lin R C, Li T T, Zhang Z J, Huang F 2018 J. Alloys Compd. 735 150 Google Scholar

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