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氧化镓(Ga2O3)作为超宽禁带半导体在深紫外探测领域有极其重要的应用价值. 它能与GaSe形成典型的Ⅱ型异质结构, 促进载流子分离与传输, 进而实现高性能的自供电探测. 本文利用等离子体增强化学气相沉积(PECVD)技术在蓝宝石衬底上生长了Ga2O3薄膜, 并采用布里奇曼技术在氧化镓薄膜上生长了GaSe薄膜, 构建了GaSe/β-Ga2O3异质结光电探测器, 分析其中涉及的光物理与界面物理问题. 该探测器对深紫外光有很好的响应性能, 在8 V的电压下器件的暗电流仅为1.83 pA, 254 nm光照下的光电流达到了6.5 nA, 且UV-C/可见光(254 nm/600 nm)的抑制比约为354, 即使在很小的光照强度下, 响应度和探测度也达到了1.49 mA/W 和 6.65× 1011 Jones. 同时由于结界面上的空间电荷区形成的光伏效应, 该探测器在零偏压下表现出自供电性能, 开路电压为0.2 V. 此外, 探测器有很好的灵敏度, 无论是在电压恒定的条件下用不同光强的光照射探测器, 还是在光强恒定条件下改变电压, 器件都能快速响应.UV photodetectors have the advantages of high sensitivity and fast response speed. As an ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) plays an extremely important role in the field of deep ultraviolet detection. It can form a typical type II heterostructure with GaSe, which promotes carrier separation and transport. In this paper, Ga2O3 epitaxial films were grown on sapphire substrates by plasma-assisted chemical vapor deposition (PECVD). GaSe films and GaSe/β-Ga2O3 heterojunction photodetectors were grown on gallium oxide films by Bridgeman technology. The detector has a good response to deep ultraviolet light, the dark current of the device is only 1.83 pA at 8 V, and the photocurrent reaches 6.5 nA at 254 nm. the UVC/Visible (254 nm/600 nm) has a high rejection ratio of about 354. Although at very small light intensities, the responsivity and detection reach 1.49 mA/W and 6.65× 1011 Jones. At the same time, due to the photovoltaic effect formed by the space charge region at the junction interface, the detector exhibits self-power supply performance at zero bias voltage, and the open-circuit voltage is 0.2 V. In addition, the detector has a very good sensitivity, whether it is irradiated with different light intensities under the condition of constant voltage, or changing the voltage under the condition of constant light intensity, the device can respond quickly. It can respond within milliseconds under a bias voltage of 10V. This paper demonstrates the enormous potential of heterojunctions in photoelectric detection by analyzing the photophysical and interface physical issues involved in heterojunction photodectectors, and provides a possibility for the deep ultraviolet detection of gallium oxide.
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Keywords:
- photoelectric detector /
- Ga2O3 /
- GaSe /
- Self-power
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