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具有快响应速度和低暗电流的垂直MSM型CsPbBr3薄膜光电探测器

程学明 崔文宇 祝鲁平 王霞 刘宗明 曹丙强

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具有快响应速度和低暗电流的垂直MSM型CsPbBr3薄膜光电探测器

程学明, 崔文宇, 祝鲁平, 王霞, 刘宗明, 曹丙强

Vertical MSM-Type CsPbBr3 Thin Film Photodetectors with Fast Response Speed and Low Dark Current

Xueming Cheng, Wenyu Cui, Luping Zhu, Xia Wang, Zongming Liu, Bingqiang Cao
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  • 卤化物钙钛矿具有优异的电学和光学性能, 是光电子器件中理想的有源层候选材料, 特别是在高性能光探测方面显示出更具竞争力的发展前景, 其中全无机钙钛矿CsPbBr3因其良好的环境稳定性而被广泛关注. 本文报道了一种具有快响应速度和低暗电流的垂直MSM型CsPbBr3薄膜光电探测器. 由于采用垂直结构缩短了光生载流子的渡越距离, 器件具有超快的响应速度63 μs, 比传统平面MSM型光电探测器提高了两个数量级. 然后, 通过在p型CsPbBr3与Ag电极之间旋涂一层TiO2薄膜, 提升了界面光生载流子的分离效率, 实现了钙钛矿薄膜与金属电极间的物理钝化, 从而大大降低了器件的暗电流, 在-1 V的偏压下暗电流只有-4.81×10-12A. 此外, 该种垂直MSM型CsPbBr3薄膜光电探测器还具线性动态范围大(122 dB), 探测率高(1.16×1012 Jones)和光稳定性好等诸多优点. 通过Sentaurus TCAD模拟发现, 电荷传输层可以选择性的阻挡载流子传输, 从而起到降低暗电流的作用, Sentaurus TCAD模拟结果与实验数据吻合, 揭示了电荷传输层降低器件暗电流的内在物理机制.
    Halide perovskites exhibit excellent electrical and optical properties, which are ideal active layer candidates for optoelectronic devices, particularly in high-performance photodetection where they demonstrate a competitive edge in development prospects. Among these, the all-inorganic perovskite CsPbBr3 has garnered widespread attention due to its better environmental stability. This paper demonstrated a vertical MSM-type CsPbBr3 thin-film photodetector characterized by fast response times and ultra-low dark current. The use of a vertical structure reduces the transit distance of photo carriers, enabling the device to achieve a fast response time of 63 μs, which is an improvement by two orders of magnitude compared to the traditional planar MSM-type photodetectors with response times of 10 ms. Then, by spinning a charge transport layer between the p-type CsPbBr3 and Ag electrodes, photocarriers effective separation at interface is realized and physical passivation between the perovskite and metal electrodes is also achieved. Due to the superior surface quality of the spun TiO2 film compared to the NiOX film, and through Sentaurus TCAD simulations and bandgap analyses, with TiO2 serving as the electron transport layer, it effectively inhibits the transmission of excess holes in p-type CsPbBr3. Consequently, the electron transport layer TiO2 is more effective at reducing dark current than the hole transport layer NiOX, with a dark current magnitude of only -4.81×10-12 A at a -1 V bias. Furthermore, this vertical MSM-type CsPbBr3 thin-film photodetector also boasts a large linear dynamic range (122 dB), high detectivity (1.16×1012 Jones), and good photo-stability. Through Sentaurus TCAD simulation, it was found that the charge transport layer selectively blocks carrier transmission, thereby reducing dark current. The simulation results are in good agreement with experimental data, providing theoretical guidance for a deeper understanding of the intrinsic physical mechanisms.
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