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随着CMOS工艺的日益成熟和SiGe外延技术水平的不断提高, SiGe BiCMOS低噪声放大器(LNA)广泛应用于空间射频收发系统的第一级模块. SiGe HBT作为SiGe BiCMOS LNA的核心器件, 天然具有优异的低温特性、抗总剂量效应和抗位移损伤效应的能力, 然而, 其瞬态电荷收集引起的空间单粒子效应是制约其空间应用的瓶颈问题. 本文基于SiGe BiCMOS工艺低噪声放大器开展了单粒子效应激光微束实验, 并定位了激光单粒子效应敏感区域. 实验结果表明, SiGe HBT瞬态电荷收集是引起 SiGe BiCMOS LNA单粒子效应的主要原因. TCAD模拟表明, 离子在CMOS区域入射时, 电离径迹会越过深沟槽隔离结构, 进入SiGe HBT区域产生电子空穴对并引起瞬态电荷收集. ADS电路模拟分析表明, 单粒子脉冲瞬态电压在越过第1级与第2级之间的电容时, 瞬态电压峰值骤降, 这表明电容在传递单粒子效应产生的瞬态脉冲过程中起着重要作用. 本文实验和模拟工作为SiGe BiCMOS LNA单粒子效应抗辐射设计加固提供了技术支持.With the further development of the complementary metal-oxide-semiconductor (CMOS) technology and the silicon-germanium (SiGe) epitaxy technology, SiGe bipolar CMOS (BiCMOS) low noise amplifiers (LNAs) are widely used in the first level of radio frequency (RF) transceiver system in space. The core part of SiGe BiCMOS LNA is SiGe heterojunction bipolar transistor (SiGe HBT) which naturally possesses excellent temperature characteristic and favorable build-in total ionizing dose and displacement damage resistance without any radiation hardening. However, the single event effect caused by the transient charge collection is the bottleneck problem, restricting its application in space. In this work, laser microbeam experiments were carried out on a SiGe BiCMOS LNA in which the sensitive region of single event effect was located. The experimental results indicate that the transient charge collection of SiGe HBT is the main reason of the single event effect of SiGe BiCMOS LNA. TCAD simulations show that the ionization track caused by ion incident in CMOS region will cross the deep trench isolation (DTI) structure, generate electron-hole pairs in SiGe HBT region and cause transient charge collection. The circuit simulations by ADS show that the peak value of the transient voltage will drop sharply when the SEE pulse transient voltage crosses the capacitor between the first stage and the second stage, which indicates that the capacitor plays an important role in transmitting the transient pulses caused by single event effect. The experimental and simulation results in this work provide technical support for radiation hardening by design (RHBD) of the single event effect of SiGe BiCMOS LNA.
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Keywords:
- SiGe BiCMOS /
- low noise amplifiers /
- single event effect /
- laser-simulated experiment /
- TCAD numerical simulations /
- ADS circuit simulations
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Liu S 2019 M. S. Thesis (Xi’an: Xidian University
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图 2 SiGe HBT集电极瞬态电流 (a) 垂直与45°; (b) 5°—85°
Fig. 2. SiGe HBT transient collector currents: (a) Vertical and 45°; (b) 5°–85°.
图 4 S参数与噪声系数仿真结果 (a) S参数 ; (b)输出端噪声系数
Fig. 4. Simulated results of S-parameters and noise figure: (a) S-parameters; (b) noise figure of output.
图 5 XND1108IE (a)概貌图; (b) S参数测试结果
Fig. 5. XND1108IE: (a) Micrograph; (b) measured S-parameters.
图 6 评估板与原理图 (a) XND1108IE评估板; (b)评估板原理图
Fig. 6. Evaluation board and schematic: (a) Evaluation board of XND1108IE; (b) schematic of the evaluation board
图 7 不同能量激光入射时RF_OUT端时域瞬态电流(a) DC条件; (b) AC条件
Fig. 7. RF_OUT time-domain transient currents with different laser energy: (a) DC conditions; (b) AC conditions.
图 8 密集入射区域以及该区域瞬态电流峰值分布图
Fig. 8. Area of dense incidence and the distribution of transient current peaks in the dense incident area.
图 9 激光能量相同时两种工作条件下峰值的比较
Fig. 9. Comparison of peak transient current under two operating conditions with the same laser energy.
图 10 AC条件下激光能量较高时的瞬态电压随时间的变化
Fig. 10. Transient voltage with time at high laser energies under AC conditions.
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[1] Chevalier P, Avenier G, Canderle E, Montagné A, Ribes G, Vu V T 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Boston, MA, October 26–28, 2015 p80
[2] Chevalier P, Liebl W, Rücker H, Gauthier A, Manger D, Heinemann B, Avenier G, Böck J 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium San Diego, CA, October 15–17, 2018 p64
[3] Rücker H, Heinemann B 2012 International SoC Design Conference Jeju Island, November 4–7, 2012 p266
[4] Mai A, Kaynak M 2016 21st International Conference on Microwave, Radar and Wireless Communications Krakow, Poland, May 9–11, 2016 p1
[5] Lie D Y C, Tsay J, Hall T, Nukala T, Lopez J, Li Y 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications Austin, TX, January 24–27, 2016 p15
[6] Pekarik J J, Adkisson J, Gray P, Liu Q, Camillo-Castillo R, Khater M, Jain V, Zetterlund B, Divergilio A, Tian X, Vallett A, Ellis-Monaghan J, Gross B J, Cheng P, Kaushal V, He Z, Lukaitis J, Newton K, Kerbaugh M, Cahoon N, Vera L, Zhao Y, Long J R, Valdes-Garcia A, Reynolds S, Lee W, Sadhu B, Harame D 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Coronado, CA, September 28– October 1, 2014 p92
[7] Dunn J S, Ahlgren D C, Coolbaugh D D, Feilchenfeld N B, Freeman G, Greenberg D R, Groves R A, Guarin F J, Hammad Y, Joseph A J, Lanzerotti L D, St. Onge S A, Orner B A, Rieh J S, Stein K J, Voldman S H, Wang P C, Zierak M J, Subbanna S, Harame D L, Herman D A, Meyerson B S 2003 IBM J. Res. Dev. 47 101
Google Scholar
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[9] England T D 2011 M. S. Thesis (Atlanta: Georgia Institute of Technology
[10] Sissons B, Mantooth A, Di J, Holmes J A, Francis A M 2015 IEEE Aerospace Conference Big Sky, MT, March 7–14, 2015 p1
[11] Cressler J D 2006 Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems San Diego, CA, January 18–20, 2006 p5
[12] Weinreb S, Bardin J C, Mani H 2007 IEEE Trans. Microwave Theory Tech. 55 2306
Google Scholar
[13] Krithivasan R, Lu Y, Najafizadeh L, Zh C D, Cressler J D, Chen S, Ulaganathan C, Blalock B J 2006 Bipolar/BiCMOS Circuits and Technology Meeting Maastricht, Netherlands, October 8–10, 2006 p1
[14] Pruvost S, Delcourt S, Telliez I, Laurens M, Bourzgui N E, Danneville F, Monroy A, Dambrine G 2005 IEEE Electr. Device Lett. 26 105
Google Scholar
[15] Chen D, Pellish J, Phan A, Kim H, Burns S, Albarian R, Holcombe B, Little B, Salzman J, Marshall P, LaBel K 2010 IEEE Radiation Effects Data Workshop Las Vegas, NV, July 20–23, 2010 p5
[16] Cressler J D 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Phoenix AZ, April 15–19, 2007 p141
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Google Scholar
[18] Hegde V N, Pradeep T M, Pushpa N, Praveen K C, Bhushan K G, Cressler J D, Prakash A P G 2018 IEEE T. Device Mat. Re. 18 592
Google Scholar
[19] Najafizadeh L, Vo T, Phillips S D, Cheng P, Wilcox E P, Cressler J D, Mojarradi M, Marshall P W 2008 IEEE Trans. Nucl. Sci. 55 3253
Google Scholar
[20] Metcalfe J, Dorfan D E, Grillo A A, Jones A, Martinez-McKinney F, Mekhedjian P, Mendoza M, Sadrozinski H F W, Saffier-Ewing G, Seiden A, Spencer E, Wilder M, Hackenburg R, Kierstead J, Rescia S, Cressler J D, Prakash G, Sutton A 2007 Nucl. Instrum. Methods Phys. Res. 579 833
Google Scholar
[21] Inanlou F, Lourenco N E, Fleetwood Z E, Song I, Howard D C, Cardoso A, Zeinolabedinzadeh S, Zhang E, Zhang C X, Paki-Amouzou P, Cressler J D 2014 IEEE Trans. Nucl. Sci. 61 3050
Google Scholar
[22] Cressler J D 2013 IEEE Trans. Nucl. Sci. 60 1992
Google Scholar
[23] Van Vonno N W, Lucas R, Thornberry D 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 Fontevraud, France, September 13–17, 1999 p414
[24] Song I, Cho M K, Oakley M A, Ildefonso A, Ju I, Buchner S P, McMorrow D, Paki P, Cressler J D 2017 IEEE Trans. Nucl. Sci. 64 1142
Google Scholar
[25] Lourenco N E, Phillips S D, England T D, Cardoso A S, Fleetwood Z E, Moen K A, McMorrow D, Warner J H, Buchner S P, Paki-Amouzou P, Pekarik J, Harame D, Raman A, Turowski M, Cressler J D 2013 IEEE Trans. Nucl. Sci. 60 4175
Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
[29] Gan D, Hu C, Parker G E, Pao H H, Jolly G 2012 IEEE Trans. Electron Devices 59 590
Google Scholar
[30] 钟怡 2014 硕士学位论文 (成都: 电子科技大学)
Zhong Y 2014 M. S. Thesis (Chengdu: University of Electronic Science and Technology of China
[31] Wei J N, He C H, Li P, Li Y H, Guo H X 2019 Chin. Phy. B 28 076106
Google Scholar
[32] Sun Y B, Fu J, Wang Y D, Zhou W, Liu Z H, Li X J, Shi Y L 2016 Microelectron. Reliab. 65 41
Google Scholar
[33] Krithivasan R, Niu G F, Cressler J D, Currie S M, Fritz K E, Reed R A, Marshall P W, Riggs P A, Randall B A, Gilbert B 2003 IEEE Trans. Nucl. Sci. 50 2126
Google Scholar
[34] 张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 物理学报 62 048501
Google Scholar
Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501
Google Scholar
[35] Zhang J X, Guo H X, Wen L, Guo Q, Cui J W, Wang X, Deng W, Zheng Q W, Fan X, Xiao R 2014 J. Semicond. 35 60
Google Scholar
[36] 李培, 贺朝会, 郭红霞, 张晋新, 魏佳男, 刘默寒 2022 太赫兹科学与电子信息学报 20 523
Google Scholar
Li P, He C H, Guo H X, Zhang J X, Wei J N, Liu M H 2022 J. Terahertz Sci. Electron. Inf. Technol. 20 523
Google Scholar
[37] Wang Q H, Liu H X, Wang S L, Chen S P 2018 IEEE Trans. Nucl. Sci. 65 2250
Google Scholar
[38] 张晋新, 贺朝会, 郭红霞, 唐杜, 熊涔, 李培, 王信 2014 物理学报 63 248503
Google Scholar
Zhang J X, He C H, Guo H X, Tang D, Xiong C, Li P, Wang X 2014 Acta Phys. Sin. 63 248503
Google Scholar
[39] Ball D R, Sheets C B, Xu L, Cao J, Wen S J, Fung R, Cazzaniga C, Kauppila J S, Massengill L W, Bhuva B L 2021 IEEE Trans. Nucl. Sci. 68 830
Google Scholar
[40] Guagliardo S, Wrobel F, Aguiar Y Q, Autran J L, Leroux P, Saigne F, Pouget V, Touboul A D 2019 19th European Conference on Radiation and Its Effects on Components and Systems Montpellier, France, September 16–20, 2019 p1
[41] 刘爽 2019 硕士学位论文 (西安: 西安电子科技大学)
Liu S 2019 M. S. Thesis (Xi’an: Xidian University
[42] Chongqing Acoustic-Optic-Electric Corp. 2022 XND1108IE Datasheet (Rev 0.3 Ed.) http://www.sisc.com.cn [2023-11-13
[43] 魏佳男 2017 硕士学位论文 (武汉: 湘潭大学)
Wei J N 2017 M. S. Thesis (Wuhan: Xiangtan University
[44] Appaswamy A, Phillips S, Cressler J D 2009 IEEE Electron. Device Lett. 30 511
Google Scholar
[45] 赖凡, 胡刚毅 2013 微电子学 43 94
Lai F, Hu G Y 2013 Microelectronics 43 94
[46] 王健安, 谢家志, 赖凡 2014 微电子学 44 225
Wang J A, Xie J Z, Lai F 2014 Microelectronics 44 225
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