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本文基于氢等离子体注入技术实现了增强型p-GaN HEMT向耗尽型器件的转变，研究了栅极正向电流的输运、电流退化与击穿行为。通过变温电流-电压（T-I-V）扫描、低频噪声测试与锁相红外成像技术，获得以下结果：1）在双对数坐标系下栅极正向T-I-V曲线呈显著幂律关系，斜率对温度不敏感，对应热激活能仅约52 meV，电流噪声具有典型1/f特性，表明正向电流应主要为缺陷辅助跳跃电流；2）在长时间正向栅压应力作用下，器件I-V特性退化为典型整流特性，表明局部高阻GaN区重新形成p-GaN。半对数坐标系下，电流线性区的理想因子高达2.6，电流噪声谱具有1/f特性，证明缺陷辅助隧穿电流成为主要输运机制；3）通过锁相红外成像技术精准定位击穿“热点”位置，并结合逐像素温度矫正技术测得“热点”处真实温度。For GaN digital circuits, the p-GaN HEMT is widely adopted as an enhancement-mode device. To convert enhancement-mode devices into depletion-mode ones, conventional approaches to achieve depletion-mode operation rely on high-energy ion etching to selectively remove portions of the p-GaN layer. However, this etching process tends to induce surface lattice damage and elevated interface state density, which can form gate-edge leakage paths. These issues contribute to increased dynamic on-resistance and compromised long-term reliability. Instead, hydrogen ion implantation has been introduced as a non-destructive doping modulation technique to mitigate these challenges. In view of this, this study utilized hydrogen ion implanted technology to achieve the transition of enhancement-mode p-GaN HEMTs to depletion-mode HEMTs. By employing temperature-dependent current-voltage (T-I-V) sweeping, low-frequency noise analysis, and lock-in infrared imaging techniques, the forward current transport, degradation and breakdown behaviors were investigated. The results show that: 1) The gate forward T-I-V curves exhibited a significant power-law relationship in double logarithmic coordinates, the current slope is insensitive to temperature, and the activation energy is derived to be ~ 52 meV. Neither of the classic pn junction theory and the space charge limited current model could explain the current behavior, whereas a defect-mediated electron hopping mechanism was identified as the dominant transport mechanism. 2) A long term of gate bias stress led to the degradation into a typical rectifying behavior, indicating the reformation of p-GaN region at certain region. The forward current has an ideality factor of ~2.6 and a typical 1/f noise spectra, indicating the dominant defect-assisted tunneling current. 3) High gate bias induced a current breakdown. The lock-in infrared imaging and pixel-by-pixel correction techniques were used to obtain the breakdown site and the "hot spots" temperature, respectively.
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Keywords:
- Hydrogen ion implanted /
- GaN HEMT /
- Transport Mechanism /
- Degradation /
- Breakdown
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