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GaN外延生长中的高位错密度与界面缺陷会加速器件可靠性退化。尤其在高温条件下，深能级缺陷被激活、载流子散射增强，使电学与射频特性进一步恶化，成为制约GaN HEMT性能提升的关键瓶颈。为此，本研究在AlGaN/GaN异质结与衬底之间引入由范德华外延的BN缓冲层，并与传统外延结构进行了全面对比。在动态偏压条件下，该结构展现出显著的陷阱抑制能力，电流崩塌仅约9.2%，阈值电压漂移低至0.09 V，导通电阻与跨导基本保持稳定。在125℃高温测试中，器件仍表现出良好可靠性，电流崩塌约31%，阈值仅负漂约0.5 V，跨导衰减和导通电阻升幅均明显低于对照器件。在室温静态特性方面，该结构使导通电阻降低约40%，最大输出电流与跨导峰值显著提升。射频性能同样增强： fT由48GHz提升至90 GHz，fmax由114 GHz提升至133 GHz。结果表明，该界面优化策略可同时改善载流子输运、抑制陷阱效应并提升射频性能，为实现高频、高功率、高可靠性的GaN HEMT提供了有效路径。Traditional GaN materials inevitably exhibit lattice mismatch and differing thermal expansion coefficients during epitaxial growth, which often leads to a sharp increase in dislocation density and interface defects. This results in severe current collapse, degraded high-frequency performance, and reliability degradation in GaN HEMT devices, representing one of the key bottlenecks facing GaN-based HEMT RF devices. Van der Waals epitaxial bonding between BN and GaN effectively suppresses dislocations and relieves material stress, playing a crucial role in enhancing the high-frequency performance and reliability of GaN HEMT devices. This paper fabricates AlGaN/GaN HEMT devices grown on BN buffer layers using van der Waals epitaxy. Test results indicate that compared to conventional devices without a BN buffer layer, not only has the on-resistance been reduced by 40% and the peak transconductance increased by 54%, but the maximum output current has also been boosted by 67%. Under strong negative gate voltage stress conditions, its performance significantly outperforms conventional devices, with a current collapse ratio of only 9.2%. During the pulse width reduction from 200 ms to 100 μs, only a minimal drift of approximately 0.09 V occurs. Under high-temperature conditions (125°C), the current collapse ratio is only 31%, with smaller reductions in transconductance and negative drift of Vth. The overall degradation is significantly lower than that of conventional AlGaN/GaN HEMT devices based on epitaxial systems, demonstrating excellent high-temperature dynamic stability. Additionally, RF performance improved, with fT increasing from 48 GHz to 90 GHz and fmax rising from 114 GHz to 133 GHz. This work fully demonstrates this interface optimization strategy simultaneously enhances carrier transport, suppresses trap effects, and improves RF performance, providing an effective pathway for realizing high-frequency, high-power, and highly reliable GaN HEMTs.
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Keywords:
- current collapse /
- high temperature /
- GaN HEMT /
- van der Waals epitaxy
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