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The Changes of resistivity with temperature of bulk nanocrystalline metal dysprosium samples with different grain sizes were studied in this paper. The value of the resistivity is a sum of the residual rsistivity ρres=ρ (0), magnetic scatter resistivity ρmag(T) and phonon scatter resistivity ρpho(T). The mean grain sizes are 10 nm, 30 nm, 100 nm and 1000 nm. It was experimentally found that the magnetic scatter resistivity ρmag(T) and phonon scatter resistivity ρpho(T) increase as temperature increases. The measured values of the resistivities of the four samples are in the range of (0.8—252)×10-8Ω ·m, representing metalloid features. Experiments also showed that the residual rsistivity ρ (0) of the sample with 10nm mean grain size is about 98.6×10-8Ω ·m, which is about one order of magnitude greater than those of the other three samples. This is an experimental example of the energy band narrowing and the appearance of electron localization with the increase of disorder degree.
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Keywords:
- electrical property of dysprosium /
- localization /
- energy band theory /
- disorder
[1] Jensen J, Mackintosh A R 1991 Rare Earth Magnetism: Structure and Excitations (Oxford: Clarendon Press) p403
[2] Chernyshov A S, Tsokol A O, Tishin A M, Gschneidner K A, Jr., Pecharsky V K 2005 Phys. Rev. B 71 184410
[3] Darnell F J 1963 Phys. Rev. 130 1825
[4] Hertz R, Kronmüller H 1978 J. Magn. Magn. Mater. 9 273
[5] Vorob'ev V V, Krupotkin M Ya, Finkel V A 1985 Sov. Phys. JETP 61 1056
[6] Izawa T, Tajima K, Yamamoto Y, Fujii M, Fujimaru O, Shinoda Y 1996 J. Phys. Soc. Jpn. 65 2640
[7] Darnell F J, Moore E P 1963 J. Appl. Phys. 34 1337
[8] Chernyshov A S, Mudryk Y, Pecharsky V K, Gschneidner K A Jr 2008 Phys. Rev. B 77 094132
[9] Rhyne J J 1968 Phys. Rev. 172 523
[10] Colvin R V, Legvold Sam, Spedding F H 1960 Phys. Rev. 120 741
[11] Hall P M, Legvold S, Spedding F H 1960 Phys. Rev. 117 971
[12] Boys D W and Legvold S 1968 Phys. Rev. 174 377
[13] Behrendt DR, Legvold S, Spedding F H 1958 Phys. Rev. 109 1544
[14] Yue M, Wang K J, Liu W Q, Zhang D T, Zhang J X 2008 Appl. Phys. Lett. 93 202501
[15] Kittel C, 1986 Introduction to Solid State Physics 8th edition (NewYork: John Wiley & Sons) p146, 539,208
[16] Rerbal K, Chazalviel J N, Ozanam F, Solomon I 2002 Journal of Non-Crystalline Solids 299-302 585
[17] Ma S S, Xu H, Liu X L, Wang H Y 2007 Acta Phys. Sin. 56 2852(in Chinese) [马松山、 徐 惠、 刘小良、 王焕友 2007 物理学报 56 2852]
[18] Zhao Y 2010 Acta Phys. Sin. 59 532(in Chinese) [赵 义 2010 物理学报 59 532]
[19] Mooij J H 1973 Phys. Stat. Sol. A17 521
[20] Ioffe A F, Regel A R 1960 Non-Crystalline, Amorphous and Liquid Electronic Semiconductors, in Progress in Semiconductors (London: Pergamon) 4 p237
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[1] Jensen J, Mackintosh A R 1991 Rare Earth Magnetism: Structure and Excitations (Oxford: Clarendon Press) p403
[2] Chernyshov A S, Tsokol A O, Tishin A M, Gschneidner K A, Jr., Pecharsky V K 2005 Phys. Rev. B 71 184410
[3] Darnell F J 1963 Phys. Rev. 130 1825
[4] Hertz R, Kronmüller H 1978 J. Magn. Magn. Mater. 9 273
[5] Vorob'ev V V, Krupotkin M Ya, Finkel V A 1985 Sov. Phys. JETP 61 1056
[6] Izawa T, Tajima K, Yamamoto Y, Fujii M, Fujimaru O, Shinoda Y 1996 J. Phys. Soc. Jpn. 65 2640
[7] Darnell F J, Moore E P 1963 J. Appl. Phys. 34 1337
[8] Chernyshov A S, Mudryk Y, Pecharsky V K, Gschneidner K A Jr 2008 Phys. Rev. B 77 094132
[9] Rhyne J J 1968 Phys. Rev. 172 523
[10] Colvin R V, Legvold Sam, Spedding F H 1960 Phys. Rev. 120 741
[11] Hall P M, Legvold S, Spedding F H 1960 Phys. Rev. 117 971
[12] Boys D W and Legvold S 1968 Phys. Rev. 174 377
[13] Behrendt DR, Legvold S, Spedding F H 1958 Phys. Rev. 109 1544
[14] Yue M, Wang K J, Liu W Q, Zhang D T, Zhang J X 2008 Appl. Phys. Lett. 93 202501
[15] Kittel C, 1986 Introduction to Solid State Physics 8th edition (NewYork: John Wiley & Sons) p146, 539,208
[16] Rerbal K, Chazalviel J N, Ozanam F, Solomon I 2002 Journal of Non-Crystalline Solids 299-302 585
[17] Ma S S, Xu H, Liu X L, Wang H Y 2007 Acta Phys. Sin. 56 2852(in Chinese) [马松山、 徐 惠、 刘小良、 王焕友 2007 物理学报 56 2852]
[18] Zhao Y 2010 Acta Phys. Sin. 59 532(in Chinese) [赵 义 2010 物理学报 59 532]
[19] Mooij J H 1973 Phys. Stat. Sol. A17 521
[20] Ioffe A F, Regel A R 1960 Non-Crystalline, Amorphous and Liquid Electronic Semiconductors, in Progress in Semiconductors (London: Pergamon) 4 p237
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