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在流体静压力(0—2GPa)下,对Hg1-xCdxTe n+-p光电二极管(x=0.5)室温电学特性进行了实验和理论研究。通过考虑深能级压力效应及其对深能级辅助隧道电流的影响,较好地解释了实验上观察到的p-n结伏安特性在小偏压范围下呈现的“反常”压力关系。由对实验数据的理论拟合得到两个深能级:D1(=Ev+0.75Eg)和D2(=EvTheoretical and experimental studies have been made about the electrical characteristics of Hg1-xCdxTe n+-p photodiodes with x=0.5 at room temperature and at hydrostatic pressures up to 2GPa. The observed "anomalous" pressure dependence of the current-voltage characteristics of p-n junctions, which exhibits in the small bias region, has been satisfactorily explained using a theory which takes into account the pressure dependence of deep levels and its effect on deep level-assisted tunneling current. By fitting the dark current to this theory, two deep levels, D1(=Ev + 0.75Eg) and D2( = Ev+0.5Eg), as well as their respective electron and hole lifetimes, were obtained. The pressure coefficients of deep levels in undoped Hg1-x Cdx Te were also obtained.
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物理学报. 1990, 39(3): 464-471.
doi: 10.7498/aps.39.464.
Hg1-xCdxTe n+-p光电二极管中的深能级及其电流机构的流体静压力研究
- 收稿日期: 1989-04-24
- 刊出日期: 2005-06-22
摘要: 在流体静压力(0—2GPa)下,对Hg1-xCdxTe n+-p光电二极管(x=0.5)室温电学特性进行了实验和理论研究。通过考虑深能级压力效应及其对深能级辅助隧道电流的影响,较好地解释了实验上观察到的p-n结伏安特性在小偏压范围下呈现的“反常”压力关系。由对实验数据的理论拟合得到两个深能级:D1(=Ev+0.75Eg)和D2(=Ev
English Abstract
HYDROSTATIC PRESSURE STUDIES OF DEEP LEVELS AND RELATED CURRENT MECHANISMS IN Hg1-xCdxTe n+-P PHOTODIODES
- Received Date:
24 April 1989
- Published Online:
22 June 2005
Abstract: Theoretical and experimental studies have been made about the electrical characteristics of Hg1-xCdxTe n+-p photodiodes with x=0.5 at room temperature and at hydrostatic pressures up to 2GPa. The observed "anomalous" pressure dependence of the current-voltage characteristics of p-n junctions, which exhibits in the small bias region, has been satisfactorily explained using a theory which takes into account the pressure dependence of deep levels and its effect on deep level-assisted tunneling current. By fitting the dark current to this theory, two deep levels, D1(=Ev + 0.75Eg) and D2( = Ev+0.5Eg), as well as their respective electron and hole lifetimes, were obtained. The pressure coefficients of deep levels in undoped Hg1-x Cdx Te were also obtained.
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