有机电致发光器件的稳定性

张新稳; 胡琦

doi:10.7498/aps.61.207802

摘要

有机电致发光器件(organic light-emitting device, OLED)具有结构简单、驱动电压低、柔性好、可实现大面积显示等特点,在光通信、信息显示与固态照明等领域均显现出巨大的商业应用前景, 备受学术界和产业界的关注.自1987年以来, OLED器件迅速发展,其亮度和效率已达到实用化的要求, 但是目前产业化面临的主要难题之一就是器件的稳定性问题.本文主要介绍了OLED器件的非本质老化机理和本质老化机理,对黑点形成、薄膜形貌不稳定、金属原子扩散、[Alq3]+阳离子和正电荷积累等多种OLED老化机理进行了总结和讨论,并针对这些老化机理重点阐述改善OLED器件工作稳定性的方法. 最后,对OLED器件稳定性研究的发展趋势做了展望.

关键词:

Abstract

Organic light-emitting device (OLED) has well-recognized advantages in simple structure, low-driving voltage, flexibility, large area and availablity. It shows tremendous commercial applications in optical communication, information display and solid-state lighting, and has been one of the most attractive projects in optoelectronic information field over the last decade. Since 1987, OLED has rapidly developed, its brightness and efficiency has reached the practical demands. However, one of the main challenges to the industrialization is the stability of the device. In this paper, some of the extrinsic and intrinsic degradation mechanisms in OLEDs are summarized and discussed, such as the dark-spot formation, morphological instability of organic thin film, metal-atom diffusion, Alq3 cationic and positive charge accumulation. After that, we summarize the approaches to obtaining the long lifetime OLED. Finally, some perspectives on the stability of OLED are proposed.

Keywords:

作者及机构信息

张新稳,
胡琦

1.
南京邮电大学信息材料与纳米技术研究院, 有机电子与信息显示国家重点实验室培育基地, 南京 210046

基金项目: 国家重点基础研究发展计划(批准号: 2009CB930600, 2012CB723402, 2012CB933301); 国家自然科学基金(批准号: 61204048);江苏省高校自然科学研究项目(批准号: 12KJB510013); 南京邮电大学科研启动基金(批准号: NY211025)和江苏高校优势学科建设工程资助的课题.

Authors and contacts

1.
Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210046, China

Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930600, 2012CB723402, 2012CB933301), the National Natural Science Foundation of China (Grant No. 61204048), the Natural Science Foundation of the Education Committee of Jiangsu Province, China (Grant No. 12KJB510013), the Scientific Research Foundation of Nanjing University of Posts and Telecommunications, China (Grant No. NY211025), and the Project of the Priority Academic Program Development of Jiangsu Higher Education Institutions.

参考文献

[1]	Tang C W, Vanslyke S A 1987 Appl. Phys. Lett. 51 913
[2]	Shen Z L, Burrows P E, Bulovic V, Forrest S R, Thompson M E 1997 Science 276 2009
[3]	McCarthy M A, Liu B, Donoghue E P, Kravchenko I, Kim D Y, So F, Rinzler A G 2011 Science 332 570
[4]	Helander M G, Wang Z B, Qiu J, Greiner M T, Puzzo D P, Liu Z W, Lu Z H 2011 Science 332 947
[5]	Sun Y R, Giebink N C, Kanno H, Ma B W, Thompson M E, Forrest S R 2006 Nature 440 908
[6]	Reineke S, Lindner F, Schwartz G, Seidler N, Walzer K, Lussem B, Leo K 2009 Nature 459 234
[7]	Muller C D, Falcou A, Reckefuss N, Rojahn M, Wiederhirn V, Rudati P, Frohne H, Nuyken O, Becker H, Meerholz K 2003 Nature 421 829
[8]	Han T H, Lee Y, Choi M R, Woo S H, Bae S H, Hong B H, Ahn J H, Lee T W 2012 Nat. Photonics 6 105
[9]	Krieg T, Petr A, Barkleit G, Dunsch L 1999 Appl. Phys. Lett. 74 3639
[10]	Mori T, Mitsuoka T, Ishii M, Fujikawa H, Taga Y 2002 Appl. Phys. Lett. 80 3895
[11]	Grozea D, Turak A, Yuan Y, Han S, Lu Z H, Kim W Y 2007 J. Appl. Phys. 101 033522
[12]	Aziz H, Xu G 1997 J. Phys. Chem. B 101 4009
[13]	Aziz H, Popovic Z, Tripp C P, Hu N X, Hor A M, Xu G 1998 Appl. Phys. Lett. 72 2642
[14]	Kim J S, Ho P K H, Murphy C E, Seeley A, Grizzi I, Burroughes J H, Friend R H 2004 Chem. Phys. Lett. 386 2
[15]	Ikeda T, Murata H, Kinoshita Y, Shike J, Ikeda Y, Kitano M 2006 Chem. Phys. Lett. 426 111
[16]	Lee J Y 2004 Chem. Phys. Lett. 393 260
[17]	Melpignano P, Baron-Toaldo A, Biondo V, Priante S, Zamboni R, Murgia M, Caria S, Gregoratti L, Barinov A, Kiskinova M 2005 Appl. Phys. Lett. 86 041105
[18]	Matsushima T, Murata H 2008 J. Appl. Phys. 104 034507
[19]	Wang Q, Luo Y C, Aziz H 2010 Appl. Phys. Lett. 97 063309
[20]	Wang Q, Aziz H 2011 Org. Electron. 12 1571
[21]	Li J, Sano T, Hirayama Y, Tomita T, Fujii H, Wakisaka K 2006 J. Appl. Phys. 100 034506
[22]	Aziz H, Luo Y C, Xu G, Popovic Z D 2006 Appl. Phys. Lett. 89 103515
[23]	Luo Y C, Aziz H, Xu G, Popovic Z D 2007 J. Appl. Phys. 101 054512
[24]	Choi S H, Lee T I, Baik H K, Roh H H, Kwon O, Suh D H 2008 Appl. Phys. Lett. 93 183301
[25]	Nenna G, Barra M, Cassinese A, Miscioscia R, Fasolino T, Tassini P, Minarini C, Della Sala D 2009 J. Appl. Phys. 105 123511
[26]	Tsai Y S, Wang S H, Chen C H, Cheng C L, Liao T C 2009 Appl. Phys. Lett. 95 233306
[27]	Chung S, Lee J H, Jeong J, Kim J J, Hong Y 2009 Appl. Phys. Lett. 94 253302
[28]	Aziz H, Popovic Z D 2004 Chem. Mater. 16 4522
[29]	Tak Y H, Kim K B, Park H G, Lee K H, Lee J R 2002 Thin Solid Films 411 12
[30]	Zhang X W, Wu Z X, Wang D D, Wang D W, Hou X 2009 Appl. Surf. Sci. 255 7970
[31]	Burrows P E, Bulovic V, Forrest S R, Sapochak L S, McCarty D M, Thompson M E 1994 Appl. Phys. Lett. 65 2922
[32]	Akande W O, Soboyejo W 2009 Appl. Phys. Lett. 95 113304
[33]	Schaer M, Nuesch F, Berner D, Leo W, Zuppiroli L 2001 Adv. Funct. Mater. 11 116
[34]	Jonda C, Mayer A B R, Stolz U, Elschner A, Karbach A 2000 J. Mater. Sci. 35 5645
[35]	McElvain J, Antoniadis H, Hueschen M R, Miller J N, Roitman D M, Sheats J R, Moon R L 1996 J. Appl. Phys. 80 6002
[36]	Savvateev V N, Yakimov A V, Davidov D, Pogreb R M, Neumann R, Avny Y 1997 Appl. Phys. Lett. 71 3344
[37]	Park J S, Chae H, Chung H K, Lee S I 2011 Semicond. Sci. Technol. 26 034001
[38]	Ishii M, Taga Y 2002 Appl. Phys. Lett. 80 3430
[39]	So F, Kondakov D 2010 Adv. Mater. 22 3762
[40]	Xu M S, Xu J B, Chen H Z, Wang M 2004 J. Phys. D: Appl. Phys. 37 2618
[41]	Vestweber H, Riess W 1997 Synth. Met. 91 181
[42]	Lee S T, Gao Z Q, Hung L S 1999 Appl. Phys. Lett. 75 1404
[43]	Suh M C, Chung H K, Kim S Y, Kwon J H, Chin B D 2005 Chem. Phys. Lett. 413 205
[44]	Luo Y C, Aziz H, Popovic Z D, Xu G 2007 J. Appl. Phys. 101 034510
[45]	Aziz H, Popovic Z D, Hu N X, Hor A M, Xu G 1999 Science 283 1900
[46]	Kondakov D Y, Sandifer J R, Tang C W, Young R H 2003 J. Appl. Phys. 93 1108
[47]	Han E M, Do L M, Yamamoto N, Fujihira M 1996 Thin Solid Films 273 202
[48]	Lee Y J, Lee H, Byun Y, Song S, Kim J E, Eom D, Cha W, Park S S, Kim J, Kim H 2007 Thin Solid Films 515 5674
[49]	Aziz H, Popovic Z, Xie S, Hor A M, Hu N X, Tripp C, Xu G 1998 Appl. Phys. Lett. 72 756
[50]	Adachi C, Nagai K, Tamoto N 1995 Appl. Phys. Lett. 66 2679
[51]	Cui J, Huang Q L, Veinot J C G, Yan H, Wang Q W, Hutchison G R, Richter A G, Evmenenko G, Dutta P, Marks T J 2002 Langmuir 18 9958
[52]	Lee J, Sohn S, Yun H J, Shin H J 2008 Appl. Phys. Lett. 93 133310
[53]	Cumpston B H, Jensen K F 1996 Appl. Phys. Lett. 69 3941
[54]	Probst M, Haight R 1997 Appl. Phys. Lett. 70 1420
[55]	Anjos P N, Aziz H, Hu N X, Popovic Z D 2002 Org. Electron. 3 9
[56]	Luo Y C, Aziz H, Popovic Z D, Xu G 2006 J. Appl. Phys. 99 054508
[57]	Luo Y C, Aziz H, Xu G, Popovic Z D 2007 Chem. Mater. 19 2079
[58]	Popovic Z D, Aziz H, Hu N X, Ioannidis A, Anjos P N 2001 J. Appl. Phys. 89 4673
[59]	Shen J, Wang D, Langlois E, Barrow W A, Green P J, Tang C W, Shi J 2000 Synth. Met. 111 233
[60]	Matsumura M, Ito A, Miyamae Y 1999 Appl. Phys. Lett. 75 1042
[61]	Meerheim R, Walzer K, Pfeiffer M, Leo K 2006 Appl. Phys. Lett. 89 061111
[62]	van Slyke S A, Chen C H, Tang C W 1996 Appl. Phys. Lett. 69 2160
[63]	Hamada Y, Sano T, Shibata K, Kuroki K 1995 Jpn. J. Appl. Phys. 34 L824
[64]	Wang D D, Wu Z X, Zhang X W, Jiao B, Liang S X, Wang D W, He R L, Hou X 2010 Org. Electron. 11 641
[65]	Zhang X W, Wu Z X, Jiao B, Wang D D, Wang D W, Hou X, Huang W 2012 J. Lumin 132 697
[66]	Wang D D, Wu Z X, Zhang X W, Wang D W, Hou X 2010 J. Lumin 130 321
[67]	Kim J S, Granstrom M, Friend R H, Johansson N, Salaneck W R, Daik R, Feast W J, Cacialli F 1998 J. Appl. Phys. 84 6859
[68]	Wu C C, Wu C I, Sturm J C, Kahn A 1997 Appl. Phys. Lett. 70 1348
[69]	Lu H T, Yokoyama M 2004 J. Cryst. Growth 260 186
[70]	Ho J J 2003 Electron. Lett. 39 458
[71]	Yu H Y, Feng X D, Grozea D, Lu Z H, Sodhi R N S, Hor A M, Aziz H 2001 Appl. Phys. Lett. 78 2595
[72]	Chan I M, Cheng W C, Hong F C 2002 Appl. Phys. Lett. 80 13
[73]	Choi B, Yoon H, Lee H H 2000 Appl. Phys. Lett. 76 412
[74]	Mason M G, Hung L S, Tang C W, Lee S T, Wong K W, Wang M 1999 J. Appl. Phys. 86 1688
[75]	Qiu Y, Zhang D Q, Wang L D, Wu G S 2001 Synth. Met. 125 415
[76]	Nuesch F, Rothberg L J, Forsythe E W, Le Q T, Gao Y L 1999 Appl. Phys. Lett. 74 880
[77]	Wang J, Lu L, Jiang W L, Zhang Y F, Zhao Y, Hou J Y, Liu S Y 2005 Chin. Phys. Lett. 22 727
[78]	Sharma A, Kippelen B, Hotchkiss P J, Marder S R 2008 Appl. Phys. Lett. 93 163308
[79]	Shirota Y, Kuwabara Y, Inada H, Wakimoto T, Nakada H, Yonemoto Y, Kawami S, Imai K 1994 Appl. Phys. Lett. 65 807
[80]	Park Y, Kim B, Lee C, Hyun A, Jang S, Lee J H, Gal Y S, Kim T H, Kim K S, Park J 2011 J. Phys. Chem. C 115 4843
[81]	Carter S A, Angelopoulos M, Karg S, Brock P J, Scott J C 1997 Appl. Phys. Lett. 70 2067
[82]	Choudhury K R, Lee J W, Chopra N, Gupta A, Jiang X Z, Amy F, So F 2009 Adv. Funct. Mater. 19 491
[83]	Hung L S, Zheng L R, Mason M G 2001 Appl. Phys. Lett. 78 673
[84]	Zhang X W, Wu Z X, Wang D W, Wang D D, He R L, Hou X 2010 Appl. Surf. Sci. 256 4468
[85]	Qiu C F, Chen H Y, Xie Z L, Wong M, Kwok H S 2002 Appl. Phys. Lett. 80 3485
[86]	Xie J, Zhang D Q, Wang L D, Duan L, Qiao J, Qiu Y 2006 Chin. Phys. Lett. 23 928
[87]	You H, Dai Y F, Zhang Z Q, Ma D G 2007 J. Appl. Phys. 101 026105
[88]	Jiang X Y, Zhang Z L, Cao J, Zhu W Q 2008 Solid State Electron. 52 952
[89]	Matsushima T, Jin G H, Murata H 2008 J. Appl. Phys. 104 054501
[90]	Kim Y H, Lee S H, Noh J, Han S H 2006 Thin Solid Films 510 305
[91]	Koller G, Winter B, Oehzelt M, Ivanco J, Netzer F P, Ramsey M G 2007 Org. Electron. 8 63
[92]	Tatsuo M, Shunsuke N, Takao N, Satoshi O 2008 Jpn. J. Appl. Phys. 47 455
[93]	Mori T, Imanishi M, Nishikawa T 2011 Appl. Phys. Express 4 071601
[94]	Tang C W, Vanslyke S A, Chen C H 1989 J. Appl. Phys. 65 3610
[95]	Shi J M, Tang C W 1997 Appl. Phys. Lett. 70 1665
[96]	Chu T Y, Chen J F, Chen S Y, Chen C J, Chen C H 2006 Appl. Phys. Lett. 89 053503
[97]	Jarikov V V, Kondakov D Y, Brown C T 2007 J. Appl. Phys. 102 104908
[98]	Bai Y, Khan M A, Zhu W Q, Jiang X Y, Zhang Z L 2008 Displays 29 365
[99]	Baldo M A, O'Brien D F, You Y, Shoustikov A, Sibley S, Thompson M E, Forrest S R 1998 Nature 395 151
[100]	D'Andrade B W, Forrest S R, Chwang A B 2003 Appl. Phys. Lett. 83 3858
[101]	Wellmann P, Hofmann M, Zeika O, Werner A, Birnstock J, Meerheim R, He G F, Walzer K, Pfeiffer M, Leo K 2005 J. Soc. Inf. Display 13 393
[102]	Kang J W, Lee D S, Park H D, Kim J W, Jeong W I, Park Y S, Lee S H, Go K, Lee J S, Kim J J 2008 Org. Electron. 9 452
[103]	Popovic Z D, Xie S, Hu N, Hor A, Fork D, Anderson G, Tripp C 2000 Thin Solid Films 363 6
[104]	Tsai C H, Liao C H, Lee M T, Chen C H 2005 Appl. Phys. Lett. 87 243505
[105]	Kim Y, Oh E, Lim H, Ha C S 2006 Appl. Phys. Lett. 88 043504
[106]	Hung L S, Tang C W, Mason M G 1997 Appl. Phys. Lett. 70 152
[107]	Zhang D Q, Li Y, Zhang G H, Gao Y D, Duan L, Wang L D, Qiu Y 2008 Appl. Phys. Lett. 92 073301
[108]	Kwon J H, Lee J Y 2009 Synth. Met. 159 1292
[109]	Lee J H, Ho Y H, Lin T C, Wu C F 2007 J. Electrochem. Soc. 154 J226
[110]	Birnstock J, Canzler T, Hofmann M, Lux A, Murano S, Wellmann P, Werner A 2008 J. Soc. Inf. Display 16 221
[111]	Wang D D, Wu Z X, Zhang X W, Jiao B, Wang D W, Hou X 2010 Chin. Sci. Bull. 55 986
[112]	Liu S W, Huang C A, Lee J H, Yang K H, Chen C C, Chang Y 2004 Thin Solid Films 453 312
[113]	Lee J H, Wu C I, Liu S W, Huang C A, Chang Y 2005 Appl. Phys. Lett. 86 103506
[114]	Tsai Y C, Jou J H 2006 Appl. Phys. Lett. 89 243521
[115]	Jarikov V V, Young R H, Vargas J R, Brown C T, Klubek K P, Liao L S 2006 J. Appl. Phys. 100 094907

施引文献

[1]	Tang C W, Vanslyke S A 1987 Appl. Phys. Lett. 51 913
[2]	Shen Z L, Burrows P E, Bulovic V, Forrest S R, Thompson M E 1997 Science 276 2009
[3]	McCarthy M A, Liu B, Donoghue E P, Kravchenko I, Kim D Y, So F, Rinzler A G 2011 Science 332 570
[4]	Helander M G, Wang Z B, Qiu J, Greiner M T, Puzzo D P, Liu Z W, Lu Z H 2011 Science 332 947
[5]	Sun Y R, Giebink N C, Kanno H, Ma B W, Thompson M E, Forrest S R 2006 Nature 440 908
[6]	Reineke S, Lindner F, Schwartz G, Seidler N, Walzer K, Lussem B, Leo K 2009 Nature 459 234
[7]	Muller C D, Falcou A, Reckefuss N, Rojahn M, Wiederhirn V, Rudati P, Frohne H, Nuyken O, Becker H, Meerholz K 2003 Nature 421 829
[8]	Han T H, Lee Y, Choi M R, Woo S H, Bae S H, Hong B H, Ahn J H, Lee T W 2012 Nat. Photonics 6 105
[9]	Krieg T, Petr A, Barkleit G, Dunsch L 1999 Appl. Phys. Lett. 74 3639
[10]	Mori T, Mitsuoka T, Ishii M, Fujikawa H, Taga Y 2002 Appl. Phys. Lett. 80 3895
[11]	Grozea D, Turak A, Yuan Y, Han S, Lu Z H, Kim W Y 2007 J. Appl. Phys. 101 033522
[12]	Aziz H, Xu G 1997 J. Phys. Chem. B 101 4009
[13]	Aziz H, Popovic Z, Tripp C P, Hu N X, Hor A M, Xu G 1998 Appl. Phys. Lett. 72 2642
[14]	Kim J S, Ho P K H, Murphy C E, Seeley A, Grizzi I, Burroughes J H, Friend R H 2004 Chem. Phys. Lett. 386 2
[15]	Ikeda T, Murata H, Kinoshita Y, Shike J, Ikeda Y, Kitano M 2006 Chem. Phys. Lett. 426 111
[16]	Lee J Y 2004 Chem. Phys. Lett. 393 260
[17]	Melpignano P, Baron-Toaldo A, Biondo V, Priante S, Zamboni R, Murgia M, Caria S, Gregoratti L, Barinov A, Kiskinova M 2005 Appl. Phys. Lett. 86 041105
[18]	Matsushima T, Murata H 2008 J. Appl. Phys. 104 034507
[19]	Wang Q, Luo Y C, Aziz H 2010 Appl. Phys. Lett. 97 063309
[20]	Wang Q, Aziz H 2011 Org. Electron. 12 1571
[21]	Li J, Sano T, Hirayama Y, Tomita T, Fujii H, Wakisaka K 2006 J. Appl. Phys. 100 034506
[22]	Aziz H, Luo Y C, Xu G, Popovic Z D 2006 Appl. Phys. Lett. 89 103515
[23]	Luo Y C, Aziz H, Xu G, Popovic Z D 2007 J. Appl. Phys. 101 054512
[24]	Choi S H, Lee T I, Baik H K, Roh H H, Kwon O, Suh D H 2008 Appl. Phys. Lett. 93 183301
[25]	Nenna G, Barra M, Cassinese A, Miscioscia R, Fasolino T, Tassini P, Minarini C, Della Sala D 2009 J. Appl. Phys. 105 123511
[26]	Tsai Y S, Wang S H, Chen C H, Cheng C L, Liao T C 2009 Appl. Phys. Lett. 95 233306
[27]	Chung S, Lee J H, Jeong J, Kim J J, Hong Y 2009 Appl. Phys. Lett. 94 253302
[28]	Aziz H, Popovic Z D 2004 Chem. Mater. 16 4522
[29]	Tak Y H, Kim K B, Park H G, Lee K H, Lee J R 2002 Thin Solid Films 411 12
[30]	Zhang X W, Wu Z X, Wang D D, Wang D W, Hou X 2009 Appl. Surf. Sci. 255 7970
[31]	Burrows P E, Bulovic V, Forrest S R, Sapochak L S, McCarty D M, Thompson M E 1994 Appl. Phys. Lett. 65 2922
[32]	Akande W O, Soboyejo W 2009 Appl. Phys. Lett. 95 113304
[33]	Schaer M, Nuesch F, Berner D, Leo W, Zuppiroli L 2001 Adv. Funct. Mater. 11 116
[34]	Jonda C, Mayer A B R, Stolz U, Elschner A, Karbach A 2000 J. Mater. Sci. 35 5645
[35]	McElvain J, Antoniadis H, Hueschen M R, Miller J N, Roitman D M, Sheats J R, Moon R L 1996 J. Appl. Phys. 80 6002
[36]	Savvateev V N, Yakimov A V, Davidov D, Pogreb R M, Neumann R, Avny Y 1997 Appl. Phys. Lett. 71 3344
[37]	Park J S, Chae H, Chung H K, Lee S I 2011 Semicond. Sci. Technol. 26 034001
[38]	Ishii M, Taga Y 2002 Appl. Phys. Lett. 80 3430
[39]	So F, Kondakov D 2010 Adv. Mater. 22 3762
[40]	Xu M S, Xu J B, Chen H Z, Wang M 2004 J. Phys. D: Appl. Phys. 37 2618
[41]	Vestweber H, Riess W 1997 Synth. Met. 91 181
[42]	Lee S T, Gao Z Q, Hung L S 1999 Appl. Phys. Lett. 75 1404
[43]	Suh M C, Chung H K, Kim S Y, Kwon J H, Chin B D 2005 Chem. Phys. Lett. 413 205
[44]	Luo Y C, Aziz H, Popovic Z D, Xu G 2007 J. Appl. Phys. 101 034510
[45]	Aziz H, Popovic Z D, Hu N X, Hor A M, Xu G 1999 Science 283 1900
[46]	Kondakov D Y, Sandifer J R, Tang C W, Young R H 2003 J. Appl. Phys. 93 1108
[47]	Han E M, Do L M, Yamamoto N, Fujihira M 1996 Thin Solid Films 273 202
[48]	Lee Y J, Lee H, Byun Y, Song S, Kim J E, Eom D, Cha W, Park S S, Kim J, Kim H 2007 Thin Solid Films 515 5674
[49]	Aziz H, Popovic Z, Xie S, Hor A M, Hu N X, Tripp C, Xu G 1998 Appl. Phys. Lett. 72 756
[50]	Adachi C, Nagai K, Tamoto N 1995 Appl. Phys. Lett. 66 2679
[51]	Cui J, Huang Q L, Veinot J C G, Yan H, Wang Q W, Hutchison G R, Richter A G, Evmenenko G, Dutta P, Marks T J 2002 Langmuir 18 9958
[52]	Lee J, Sohn S, Yun H J, Shin H J 2008 Appl. Phys. Lett. 93 133310
[53]	Cumpston B H, Jensen K F 1996 Appl. Phys. Lett. 69 3941
[54]	Probst M, Haight R 1997 Appl. Phys. Lett. 70 1420
[55]	Anjos P N, Aziz H, Hu N X, Popovic Z D 2002 Org. Electron. 3 9
[56]	Luo Y C, Aziz H, Popovic Z D, Xu G 2006 J. Appl. Phys. 99 054508
[57]	Luo Y C, Aziz H, Xu G, Popovic Z D 2007 Chem. Mater. 19 2079
[58]	Popovic Z D, Aziz H, Hu N X, Ioannidis A, Anjos P N 2001 J. Appl. Phys. 89 4673
[59]	Shen J, Wang D, Langlois E, Barrow W A, Green P J, Tang C W, Shi J 2000 Synth. Met. 111 233
[60]	Matsumura M, Ito A, Miyamae Y 1999 Appl. Phys. Lett. 75 1042
[61]	Meerheim R, Walzer K, Pfeiffer M, Leo K 2006 Appl. Phys. Lett. 89 061111
[62]	van Slyke S A, Chen C H, Tang C W 1996 Appl. Phys. Lett. 69 2160
[63]	Hamada Y, Sano T, Shibata K, Kuroki K 1995 Jpn. J. Appl. Phys. 34 L824
[64]	Wang D D, Wu Z X, Zhang X W, Jiao B, Liang S X, Wang D W, He R L, Hou X 2010 Org. Electron. 11 641
[65]	Zhang X W, Wu Z X, Jiao B, Wang D D, Wang D W, Hou X, Huang W 2012 J. Lumin 132 697
[66]	Wang D D, Wu Z X, Zhang X W, Wang D W, Hou X 2010 J. Lumin 130 321
[67]	Kim J S, Granstrom M, Friend R H, Johansson N, Salaneck W R, Daik R, Feast W J, Cacialli F 1998 J. Appl. Phys. 84 6859
[68]	Wu C C, Wu C I, Sturm J C, Kahn A 1997 Appl. Phys. Lett. 70 1348
[69]	Lu H T, Yokoyama M 2004 J. Cryst. Growth 260 186
[70]	Ho J J 2003 Electron. Lett. 39 458
[71]	Yu H Y, Feng X D, Grozea D, Lu Z H, Sodhi R N S, Hor A M, Aziz H 2001 Appl. Phys. Lett. 78 2595
[72]	Chan I M, Cheng W C, Hong F C 2002 Appl. Phys. Lett. 80 13
[73]	Choi B, Yoon H, Lee H H 2000 Appl. Phys. Lett. 76 412
[74]	Mason M G, Hung L S, Tang C W, Lee S T, Wong K W, Wang M 1999 J. Appl. Phys. 86 1688
[75]	Qiu Y, Zhang D Q, Wang L D, Wu G S 2001 Synth. Met. 125 415
[76]	Nuesch F, Rothberg L J, Forsythe E W, Le Q T, Gao Y L 1999 Appl. Phys. Lett. 74 880
[77]	Wang J, Lu L, Jiang W L, Zhang Y F, Zhao Y, Hou J Y, Liu S Y 2005 Chin. Phys. Lett. 22 727
[78]	Sharma A, Kippelen B, Hotchkiss P J, Marder S R 2008 Appl. Phys. Lett. 93 163308
[79]	Shirota Y, Kuwabara Y, Inada H, Wakimoto T, Nakada H, Yonemoto Y, Kawami S, Imai K 1994 Appl. Phys. Lett. 65 807
[80]	Park Y, Kim B, Lee C, Hyun A, Jang S, Lee J H, Gal Y S, Kim T H, Kim K S, Park J 2011 J. Phys. Chem. C 115 4843
[81]	Carter S A, Angelopoulos M, Karg S, Brock P J, Scott J C 1997 Appl. Phys. Lett. 70 2067
[82]	Choudhury K R, Lee J W, Chopra N, Gupta A, Jiang X Z, Amy F, So F 2009 Adv. Funct. Mater. 19 491
[83]	Hung L S, Zheng L R, Mason M G 2001 Appl. Phys. Lett. 78 673
[84]	Zhang X W, Wu Z X, Wang D W, Wang D D, He R L, Hou X 2010 Appl. Surf. Sci. 256 4468
[85]	Qiu C F, Chen H Y, Xie Z L, Wong M, Kwok H S 2002 Appl. Phys. Lett. 80 3485
[86]	Xie J, Zhang D Q, Wang L D, Duan L, Qiao J, Qiu Y 2006 Chin. Phys. Lett. 23 928
[87]	You H, Dai Y F, Zhang Z Q, Ma D G 2007 J. Appl. Phys. 101 026105
[88]	Jiang X Y, Zhang Z L, Cao J, Zhu W Q 2008 Solid State Electron. 52 952
[89]	Matsushima T, Jin G H, Murata H 2008 J. Appl. Phys. 104 054501
[90]	Kim Y H, Lee S H, Noh J, Han S H 2006 Thin Solid Films 510 305
[91]	Koller G, Winter B, Oehzelt M, Ivanco J, Netzer F P, Ramsey M G 2007 Org. Electron. 8 63
[92]	Tatsuo M, Shunsuke N, Takao N, Satoshi O 2008 Jpn. J. Appl. Phys. 47 455
[93]	Mori T, Imanishi M, Nishikawa T 2011 Appl. Phys. Express 4 071601
[94]	Tang C W, Vanslyke S A, Chen C H 1989 J. Appl. Phys. 65 3610
[95]	Shi J M, Tang C W 1997 Appl. Phys. Lett. 70 1665
[96]	Chu T Y, Chen J F, Chen S Y, Chen C J, Chen C H 2006 Appl. Phys. Lett. 89 053503
[97]	Jarikov V V, Kondakov D Y, Brown C T 2007 J. Appl. Phys. 102 104908
[98]	Bai Y, Khan M A, Zhu W Q, Jiang X Y, Zhang Z L 2008 Displays 29 365
[99]	Baldo M A, O'Brien D F, You Y, Shoustikov A, Sibley S, Thompson M E, Forrest S R 1998 Nature 395 151
[100]	D'Andrade B W, Forrest S R, Chwang A B 2003 Appl. Phys. Lett. 83 3858
[101]	Wellmann P, Hofmann M, Zeika O, Werner A, Birnstock J, Meerheim R, He G F, Walzer K, Pfeiffer M, Leo K 2005 J. Soc. Inf. Display 13 393
[102]	Kang J W, Lee D S, Park H D, Kim J W, Jeong W I, Park Y S, Lee S H, Go K, Lee J S, Kim J J 2008 Org. Electron. 9 452
[103]	Popovic Z D, Xie S, Hu N, Hor A, Fork D, Anderson G, Tripp C 2000 Thin Solid Films 363 6
[104]	Tsai C H, Liao C H, Lee M T, Chen C H 2005 Appl. Phys. Lett. 87 243505
[105]	Kim Y, Oh E, Lim H, Ha C S 2006 Appl. Phys. Lett. 88 043504
[106]	Hung L S, Tang C W, Mason M G 1997 Appl. Phys. Lett. 70 152
[107]	Zhang D Q, Li Y, Zhang G H, Gao Y D, Duan L, Wang L D, Qiu Y 2008 Appl. Phys. Lett. 92 073301
[108]	Kwon J H, Lee J Y 2009 Synth. Met. 159 1292
[109]	Lee J H, Ho Y H, Lin T C, Wu C F 2007 J. Electrochem. Soc. 154 J226
[110]	Birnstock J, Canzler T, Hofmann M, Lux A, Murano S, Wellmann P, Werner A 2008 J. Soc. Inf. Display 16 221
[111]	Wang D D, Wu Z X, Zhang X W, Jiao B, Wang D W, Hou X 2010 Chin. Sci. Bull. 55 986
[112]	Liu S W, Huang C A, Lee J H, Yang K H, Chen C C, Chang Y 2004 Thin Solid Films 453 312
[113]	Lee J H, Wu C I, Liu S W, Huang C A, Chang Y 2005 Appl. Phys. Lett. 86 103506
[114]	Tsai Y C, Jou J H 2006 Appl. Phys. Lett. 89 243521
[115]	Jarikov V V, Young R H, Vargas J R, Brown C T, Klubek K P, Liao L S 2006 J. Appl. Phys. 100 094907

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