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GaAs均匀点状结构的分子束外延图形生长

牛智川 周增圻 吴荣汉 封松林 R.NOETZEL U.JAHN K.H.PLOOG

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GaAs均匀点状结构的分子束外延图形生长

牛智川, 周增圻, 吴荣汉, 封松林, R.NOETZEL, U.JAHN, K.H.PLOOG

FORMATION OF GaAs UNIFORM DOT STRUCTURES GROWN BY MBE ON PATTERNED SUBSTRATES

NIU ZHI-CHUAN, ZHOU ZENG-QI, WU RONG-HAN, FENG SONG-LIN, R.NOETZEL, U.JAHN, K.H.PLOOG
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  • 报道了在(311)A腐蚀图形衬底上,用分子束外延(MBE)生长高度规则的三种点状结构的实验研究.样品表面的原子力显微镜和剖面的扫描电子显微镜测试结果表明,在不同尺寸的方形凹面腐蚀图形区域,原凹面之间形成了沿[233]晶向不完全和完全收缩的尖角形点状外延结构;而在方形台面腐蚀图形区域,台顶面之间形成了沿[233]方向收缩的脊形点状结构.分析认为这些均匀有序的三角形点状结构的形成是由非平面(311)A衬底上生长各向异性导致的必然结果,而构成这些点结构的晶面取向与原图形的取向相关.低温阴极荧光谱测试结果清晰地表
    Uniform triangular dots (TDs) and ridge dots (RDs) structures are grown by moleculat beam epitaxy (MBE) on square mesa and hole patterned (311)A substrates. The surface morphology and cross-sectional characterization of the dot structures investigated by atomic force microscopy(AFM) and scanning electron microscopy(SEM) show that the TDs and RDs structures are formed on the hole and mesa patterned areas during the growth. TDs are one-side pinch-off structure evaluated between the holes with highly uniform tips along [233] direction, and the RDs two-side pinch-off structure accomplished on the mesa with ordered two opposite tips, respectively. The AFM line-scan height profiles of the dots structures indicate that the TDs and RDs structures are dominated by the Ga adatoms preferential migration from symmetric (331)A side walls of the mesa and holes to the bottom region to develop the triangular shaped tips structure, while the facet orientation of the tips is determined by the original side walls orientation of the mesa and hole to lead to form uniform pinch-off arrays. The cathode luminescense measurements reveal that the line,dot,ring-like lateral variations of quantum well confinement energies are formed in the regions of the TDs and RDs structures. These unique growth phenomenon provides a good possibility to realize three-dimensional quantum confinement structures by using MBE growth on (311)A substrates with much smaller length scale of patterning.
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出版历程
  • 收稿日期:  1997-07-18
  • 修回日期:  1998-02-06
  • 刊出日期:  1998-04-05

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