搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Mg2Si的电子结构和热电输运性质的理论研究

彭华 王春雷 李吉超 王洪超 王美晓

引用本文:
Citation:

Mg2Si的电子结构和热电输运性质的理论研究

彭华, 王春雷, 李吉超, 王洪超, 王美晓

Theoretical investigation of the electronic structure and thermoelectric transport property of Mg2Si

Peng Hua, Wang Chun-Lei, Li Ji-Chao, Wang Hong-Chao, Wang Mei-Xiao
PDF
导出引用
  • 利用全势线性缀加平面波法,对Mg2Si的几何结构和电子结构进行了计算,得到了稳定的晶格参数以及能带和电子态密度.能带结构表明,Mg2Si为间接带隙半导体,禁带宽度为020 eV.在此基础上利用玻尔兹曼输运理论和刚性带近似计算了材料的电导率、Seebeck系数和功率因子.结果表明,在温度为700 K时p型和n型掺杂的Mg2Si功率因子达到最大时的最佳载流子浓度分别为7749×1019 cm-3和
    Full-potential linearized augmented plane wave method and Boltzmann transport properties have been used to investigate the crystal structure and electronic structure of Mg2Si. Electronic conductivity, Seebeck coefficient and power factor are calculated. Energy band structure shows that Mg2Si is an indirect semiconductor with energy band gap of about 020 eV. Transport properties versus the doping level have been calculated for the n type and p type doped materials at 700 K. The optimal carrier concentration corresponding to the maxima of power factor are obtained, which are 7749×1019 cm-3 and 1346×1020 cm-3 for the p-doping and n-doping respectively. Maximum ZT value of 093 has been estimated in combination with experimental data of thermal conductivity. From the transport properties at different temperatures, we found that the ratio of power factor to relaxation time is enhanced when the temperature increases. Optimum doping level of materials used in middle and high temperature range is higher than that of materials used in low temperature.
    • 基金项目: 国家重点基础研究发展计划(批准号:2007CB607504)资助的课题.
    [1]

    [1] Liu W S, Zhang B P, Li J F, Zhang H L, Zhao L D 2008 Acta Phys. Sin. 57 3791 (in Chinese)[刘玮书、 张波萍、李敬锋、张海龙、赵立东 2008 物理学报 57 3791]

    [2]

    [2] Hochbaum A I, Chen P K, Delgado R D, Liang W J, Garnett E C, Najarian M, Majumdar A, Yang P D 2008 Nature 451 163

    [3]

    [3] Tang X F, Chen L D, Goto T, Hiraial T, Yuan R Z 2002 Acta Phys. Sin. 51 2823 (in Chinese)[唐新峰、 陈立东、後藤孝、平井敏雄、袁润章 2002 物理学报 51 2823]

    [4]

    [4] Cai K F, Yan C, He Z M, Cui J L, Stiewe C, Müller E, Li H 2009 J. Alloys Compd. 469 499

    [5]

    [5] Goldsmid H J 1964 Thermoelectric Refrigeration (New York: Plenum) p37

    [6]

    [6] Jang J, Xu G J, Cui P, Chen L D 2006 Acta Phys. Sin. 55 4849 (in Chinese)[蒋俊、许高杰、崔平、陈立东 2006 物理学报 55 4849]

    [7]

    [7] Tung Y W, Cohen M L 1969 Phys. Rev. 180 823

    [8]

    [8] Heller M W, Nasby R D, Johnson R T 1976 J. Appl. Phys. 47 4113

    [9]

    [9] Kajikawa T, Shida K, Shiraishi K, Ito K, Omori T, Hirai M, Shonan T 1998 Proceedings of the 17th International Conference on Thermoelectrics (Nagoya: IEEE) p362

    [10]

    ] Tani J I, Kido H 2007 Intermetallics 15 1202

    [11]

    ] Zhang Q, Yin H, Zhao X B, He J, Ji X H, Zhu T J, Tritt T M 2008 Phys. Stat. Sol. (a) 205 1657

    [12]

    ] Zhang Q, He J, Zhao X B, Zhang S N, Zhu T J, Yin H, Tritt T M 2008 J. Phys. D 41 185103

    [13]

    ] Corkill J L, Cohen M L 1993 Phys. Rev. B 48 17138

    [14]

    ] Tani J I, Kido H 2008 Comput. Mater. Sci. 42 531

    [15]

    ] Tani J I, Kido H 2008 Intermetallics 16 418

    [16]

    ] Liu N N, Song R B, Sun H Y, Du D W 2008 Acta Phys. Sin. 57 7145 (in Chinese)[刘娜娜、宋仁伯、孙翰英、杜大伟 2008 物理学报 57 7145]

    [17]

    ]Akasaka M, Iida T, Matsumoto A, Yamanaka K, Takanashi Y, Imai T, Hamada N 2008 J. Appl. Phys. 104 013703

    [18]

    ] Blaha P, Schwarz K, Madsen G K H, Kvasnicka D, Luitz J 2001 WIEN2K, An Augmented Plane Wave Plus Local Orbitals Program for Calculating Crystal Properties (Vienna: Technische Universitt Wien )

    [19]

    ] Perdew J P, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865

    [20]

    ] Madsen G K H, Singh D J 2006 Comput. Phys. Commun. 175 67

    [21]

    ] Lykke L, Iversen B B, Madsen G K H 2006 Phys. Rev. B 73 195121

    [22]

    ] Yang J, Li H M, Wu T, Zhang W Q, Chen L D, Yang J H 2008 Adv. Funct. Mater. 18 2880

    [23]

    ] Singh D J 2008 Phys. Rev. B 76 085110

    [24]

    ] Wang W, Wang Z Y, Wang L L, Liu H J, Shi J, Li H, Tang X F 2009 J. Appl. Phys. 105 013709

    [25]

    ] Li J C, Wang C L, Wang M X, Peng H, Zhang R Z, Zhao M L, Liu J, Zhang J L , Mei L M 2009 J. Appl. Phys. 105 043503

    [26]

    ]Akasaka M, Iida T, Matsumoto A, Yamanaka K, Takanashi Y, Imai T, Noriaki H 2008 J. Appl. Phys. 104 013703

    [27]

    ] Feng D, Jin G J 2003 Condensed Matter Physics (Vol.1) (Beijing: Higher Education Press) p227 (in Chinese) [冯端、金国钧 2003 凝聚态物理学(上卷)(北京:高等教育出版社) 第227页]

    [28]

    ] Scheidemantel T J, Ambrosch-Draxl C, Thonhauser T, Badding J V, Sofo J O 2003 Phys. Rev. B 68 125210

    [29]

    ] Anastassakis E, Hawranek J P 1972 Phys. Rev. B 5 4003

    [30]

    ] Kalarasse F, Bennecer B 2008 J. Phys. Chem. Solids 9 1775

    [31]

    ] Morris R G, Redin R D, Danielson G C 1958 Phys. Rev. 109 1909

    [32]

    ] Akasaka M, Iida T, Nemoto T, Soga J, Sato J,Makino K, Fukano M, Takanashi Y 2007 J. Cryst. Growth 304 196

  • [1]

    [1] Liu W S, Zhang B P, Li J F, Zhang H L, Zhao L D 2008 Acta Phys. Sin. 57 3791 (in Chinese)[刘玮书、 张波萍、李敬锋、张海龙、赵立东 2008 物理学报 57 3791]

    [2]

    [2] Hochbaum A I, Chen P K, Delgado R D, Liang W J, Garnett E C, Najarian M, Majumdar A, Yang P D 2008 Nature 451 163

    [3]

    [3] Tang X F, Chen L D, Goto T, Hiraial T, Yuan R Z 2002 Acta Phys. Sin. 51 2823 (in Chinese)[唐新峰、 陈立东、後藤孝、平井敏雄、袁润章 2002 物理学报 51 2823]

    [4]

    [4] Cai K F, Yan C, He Z M, Cui J L, Stiewe C, Müller E, Li H 2009 J. Alloys Compd. 469 499

    [5]

    [5] Goldsmid H J 1964 Thermoelectric Refrigeration (New York: Plenum) p37

    [6]

    [6] Jang J, Xu G J, Cui P, Chen L D 2006 Acta Phys. Sin. 55 4849 (in Chinese)[蒋俊、许高杰、崔平、陈立东 2006 物理学报 55 4849]

    [7]

    [7] Tung Y W, Cohen M L 1969 Phys. Rev. 180 823

    [8]

    [8] Heller M W, Nasby R D, Johnson R T 1976 J. Appl. Phys. 47 4113

    [9]

    [9] Kajikawa T, Shida K, Shiraishi K, Ito K, Omori T, Hirai M, Shonan T 1998 Proceedings of the 17th International Conference on Thermoelectrics (Nagoya: IEEE) p362

    [10]

    ] Tani J I, Kido H 2007 Intermetallics 15 1202

    [11]

    ] Zhang Q, Yin H, Zhao X B, He J, Ji X H, Zhu T J, Tritt T M 2008 Phys. Stat. Sol. (a) 205 1657

    [12]

    ] Zhang Q, He J, Zhao X B, Zhang S N, Zhu T J, Yin H, Tritt T M 2008 J. Phys. D 41 185103

    [13]

    ] Corkill J L, Cohen M L 1993 Phys. Rev. B 48 17138

    [14]

    ] Tani J I, Kido H 2008 Comput. Mater. Sci. 42 531

    [15]

    ] Tani J I, Kido H 2008 Intermetallics 16 418

    [16]

    ] Liu N N, Song R B, Sun H Y, Du D W 2008 Acta Phys. Sin. 57 7145 (in Chinese)[刘娜娜、宋仁伯、孙翰英、杜大伟 2008 物理学报 57 7145]

    [17]

    ]Akasaka M, Iida T, Matsumoto A, Yamanaka K, Takanashi Y, Imai T, Hamada N 2008 J. Appl. Phys. 104 013703

    [18]

    ] Blaha P, Schwarz K, Madsen G K H, Kvasnicka D, Luitz J 2001 WIEN2K, An Augmented Plane Wave Plus Local Orbitals Program for Calculating Crystal Properties (Vienna: Technische Universitt Wien )

    [19]

    ] Perdew J P, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865

    [20]

    ] Madsen G K H, Singh D J 2006 Comput. Phys. Commun. 175 67

    [21]

    ] Lykke L, Iversen B B, Madsen G K H 2006 Phys. Rev. B 73 195121

    [22]

    ] Yang J, Li H M, Wu T, Zhang W Q, Chen L D, Yang J H 2008 Adv. Funct. Mater. 18 2880

    [23]

    ] Singh D J 2008 Phys. Rev. B 76 085110

    [24]

    ] Wang W, Wang Z Y, Wang L L, Liu H J, Shi J, Li H, Tang X F 2009 J. Appl. Phys. 105 013709

    [25]

    ] Li J C, Wang C L, Wang M X, Peng H, Zhang R Z, Zhao M L, Liu J, Zhang J L , Mei L M 2009 J. Appl. Phys. 105 043503

    [26]

    ]Akasaka M, Iida T, Matsumoto A, Yamanaka K, Takanashi Y, Imai T, Noriaki H 2008 J. Appl. Phys. 104 013703

    [27]

    ] Feng D, Jin G J 2003 Condensed Matter Physics (Vol.1) (Beijing: Higher Education Press) p227 (in Chinese) [冯端、金国钧 2003 凝聚态物理学(上卷)(北京:高等教育出版社) 第227页]

    [28]

    ] Scheidemantel T J, Ambrosch-Draxl C, Thonhauser T, Badding J V, Sofo J O 2003 Phys. Rev. B 68 125210

    [29]

    ] Anastassakis E, Hawranek J P 1972 Phys. Rev. B 5 4003

    [30]

    ] Kalarasse F, Bennecer B 2008 J. Phys. Chem. Solids 9 1775

    [31]

    ] Morris R G, Redin R D, Danielson G C 1958 Phys. Rev. 109 1909

    [32]

    ] Akasaka M, Iida T, Nemoto T, Soga J, Sato J,Makino K, Fukano M, Takanashi Y 2007 J. Cryst. Growth 304 196

  • [1] 高君玲, 赵怀周, 许艳丽. 纳米SiO2复合对Mg3Sb2基材料热电性能的影响. 物理学报, 2023, 72(11): 117102. doi: 10.7498/aps.72.20230176
    [2] 郑建军, 张丽萍. 单层Cu2X的热电性质. 物理学报, 2023, 72(8): 086301. doi: 10.7498/aps.72.20222015
    [3] 黄露露, 张建, 孔源, 李地, 辛红星, 秦晓英. 黄铜矿Cu1–xNixGaTe2热电输运性质的优化. 物理学报, 2021, 70(20): 207101. doi: 10.7498/aps.70.20211165
    [4] 王傲霜, 肖清泉, 陈豪, 何安娜, 秦铭哲, 谢泉. Mg2Si/Si雪崩光电二极管的设计与模拟. 物理学报, 2021, 70(10): 108501. doi: 10.7498/aps.70.20201923
    [5] 郑丽仙, 胡剑峰, 骆军. 铜掺杂Cu2SnSe4的热电输运性能. 物理学报, 2020, 69(24): 247102. doi: 10.7498/aps.69.20200861
    [6] 袁国才, 陈曦, 黄雨阳, 毛俊西, 禹劲秋, 雷晓波, 张勤勇. Mg2Si0.3Sn0.7掺杂Ag和Li的热电性能对比. 物理学报, 2019, 68(11): 117201. doi: 10.7498/aps.68.20190247
    [7] 付正鸿, 李婷, 单美乐, 郭糠, 苟国庆. H对Mg2Si力学性能影响的第一性原理研究. 物理学报, 2019, 68(17): 177102. doi: 10.7498/aps.68.20190368
    [8] 刘海云, 刘湘涟, 田定琪, 杜正良, 崔教林. 含硫宽禁带Ga2Te3基热电半导体的声电输运特性. 物理学报, 2015, 64(19): 197201. doi: 10.7498/aps.64.197201
    [9] 张华, 陈少平, 龙洋, 樊文浩, 王文先, 孟庆森. 微波低温制备Mg2Si0.4Sn0.6-yBiy热电材料的传输机理. 物理学报, 2015, 64(24): 247302. doi: 10.7498/aps.64.247302
    [10] 朱岩, 张新宇, 张素红, 马明臻, 刘日平, 田宏燕. Mg2Si化合物在静水压下的电子输运性能研究. 物理学报, 2015, 64(7): 077103. doi: 10.7498/aps.64.077103
    [11] 柳福提, 程艳, 羊富彬, 程晓洪, 陈向荣. Si4团簇电子输运性质的第一性原理计算. 物理学报, 2013, 62(14): 140504. doi: 10.7498/aps.62.140504
    [12] 柳福提, 程艳, 羊富彬, 程晓洪, 陈向荣. Au-Si-Au结点电子输运性质的第一性原理计算. 物理学报, 2013, 62(10): 107401. doi: 10.7498/aps.62.107401
    [13] 张建新, 高爱华, 郭学锋, 任磊. Mg-Sn-Si合金中Mg2(Si,Sn)复合相的结构与性能研究. 物理学报, 2013, 62(17): 178101. doi: 10.7498/aps.62.178101
    [14] 余本海, 刘墨林, 陈东. 第一性原理研究Mg2 Si同质异相体的结构、电子结构和弹性性质. 物理学报, 2011, 60(8): 087105. doi: 10.7498/aps.60.087105
    [15] 邓恒, 杨昌平, 黄昌, 徐玲芳. 双层钙钛矿La1.8Ca1.2Mn2O7磁性相关I-V非线性与电输运性质. 物理学报, 2010, 59(10): 7390-7395. doi: 10.7498/aps.59.7390
    [16] 余志强, 谢泉, 肖清泉, 赵珂杰. Mg2Si晶体结构及消光特性的研究. 物理学报, 2009, 58(10): 6889-6893. doi: 10.7498/aps.58.6889
    [17] 陈晓阳, 徐象繁, 胡荣星, 任 之, 许祝安, 曹光旱. LixNayCoO2的制备和热电性质. 物理学报, 2007, 56(3): 1627-1631. doi: 10.7498/aps.56.1627
    [18] 聂 颖, 隋 郁, 宋秀丹, 王先杰, 程金光, 千正男, 苏文辉. 成型压力对CrO2低温输运性质的影响. 物理学报, 2006, 55(6): 3038-3042. doi: 10.7498/aps.55.3038
    [19] 彭英才, 徐刚毅, 何宇亮, 刘 明, 李月霞. (n)nc-Si:H/(p)c-Si异质结中载流子输运性质的研究. 物理学报, 2000, 49(12): 2466-2471. doi: 10.7498/aps.49.2466
    [20] 金庆华, 王平基, 丁大同, 王鼎盛. 金属铝中层错能的缀加球面波法第一性原理计算. 物理学报, 1992, 41(10): 1632-1637. doi: 10.7498/aps.41.1632
计量
  • 文章访问数:  8882
  • PDF下载量:  1353
  • 被引次数: 0
出版历程
  • 收稿日期:  2009-08-17
  • 修回日期:  2010-01-05
  • 刊出日期:  2010-03-05

/

返回文章
返回