搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

F原子与SiC(100)表面相互作用的分子动力学模拟

贺平逆 吕晓丹 赵成利 宁建平 秦尤敏 苟富均

引用本文:
Citation:

F原子与SiC(100)表面相互作用的分子动力学模拟

贺平逆, 吕晓丹, 赵成利, 宁建平, 秦尤敏, 苟富均

Molecular dynamics simulations of energy effectson atorn F interaction with SiC(100)

Zhao Cheng-Li, Lü Xiao-Dan, Ning Jian-Ping, Qing You-Min, He Ping-Ni, Gou Fu-Jun
PDF
导出引用
  • 本文采用分子动力学模拟方法研究了F原子(能量在0.5—15 eV之间)与表面温度为300 K的SiC(100)表面的相互作用过程. 考察了不同能量下稳定含F反应层的形成过程和沉积、刻蚀过程的关系以及稳定含F反应层对刻蚀的影响. 揭示了低能F原子刻蚀SiC的微观动力学过程. 模拟结果表明伴随着入射F原子在表面的沉积量达到饱和,SiC表面将形成一个稳定的含F反应层. 在入射能量小于6 eV时,反应层主要成分为SiF3,最表层为Si-F层. 入射能量大于6 eV时,反应层主要成分为SiF.
    In this study, molecular dynamics simulations are used to investigate atom F interacting with SiC at 300 K. Simulation results show that with the saturation of the deposition of F atoms on the surface, the compositions (SiFx and CFx groups (x4 is dominant. And the main etching mechanism of Si atoms is chemical etching.
    • 基金项目: 贵州省优秀青年科技人才培养计划(批准号:700968101)和国际热核聚变实验堆(ITER)计划专项(批准号:2009GB104006)资助的课题.
    [1]

    Chung G S, Ohn C M 2007 Electron. Lett. 43 1116

    [2]

    Huang Q Z, Yu J Z, Chen S W, Xu X J, Han W H, Fan Z C 2008 Chin. Phys. B 17 2562

    [3]

    McLane G F, Flemish J R 1996 Appl. Phys. Lett. 68 3755

    [4]

    Kim B, Kong S M, Lee B T 2002 J. Vac. Sci. Technol. A 20 146

    [5]

    Lee H Y, Kim D W, Sung Y J, Yeom G Y 2005 Jpn. J. Appl. Phys. 44 1445

    [6]

    Lee H Y, Kim D W, Sung Y J, Yeom G Y 2005 Thin Solid Films 475 318

    [7]

    Leerungnawarat P, Lee K P, Pearton S J, Ren F, Chu S N G 2001 J. Electron. Mater. 30 202

    [8]

    Cai C C, Yang Y T, Li Y J, Jia H J, Ji H L 2006 Acta Phys. Sin. 55 1351 (in Chinese) [柴常春、杨银堂、李跃进、贾护军、姬慧莲 1999 物理学报 48 550]

    [9]

    Wu J, Parsons J D, Evans D R 1995 J. Electrochem. Soc. 142 669

    [10]

    Abrams C F, Graves D B 1999 J. Appl. Phys. 86 5938

    [11]

    Abrams C F, Graves D B 2000 Thin Solid Films 374 150

    [12]

    Humbird D, Graves D B 2004 J. Appl. Phys. 96 791

    [13]

    Gou F, Liang M C, Chen Z, Qian Q 2007 Appl. Surf. Sci. 253 8743

    [14]

    Gou F, Zen L T, Meng C L 2008 Thin Solid Films 516 1832

    [15]

    Winters H F, Coburn J W 1992 Surf. Sci. Rep. 14 162

    [16]

    Kota G P, Coburn J W, Graves D B 1999 J. Appl. Phys. 85 74

    [17]

    Alder B J, Walnwright T E 1957 Chem.Phys. 27 1208

    [18]

    Berendsen H J C, Postma J P M, Gunsteren W F, Dinola A, Haak J R 1984 Chem. Phys. 81 3684

    [19]

    Gou F, Kleyn A W, Gleeson M A 2008 Int. Rev. Phys. Chem. 27 229

    [20]

    Vegh J J, Humbird D, Graves D B 2005 J. Vac. Sci. Technol. A 23 1598

    [21]

    Tu Y Y, Chuang T J, Winters H F 1981 Phys. Rev. B 23 823

  • [1]

    Chung G S, Ohn C M 2007 Electron. Lett. 43 1116

    [2]

    Huang Q Z, Yu J Z, Chen S W, Xu X J, Han W H, Fan Z C 2008 Chin. Phys. B 17 2562

    [3]

    McLane G F, Flemish J R 1996 Appl. Phys. Lett. 68 3755

    [4]

    Kim B, Kong S M, Lee B T 2002 J. Vac. Sci. Technol. A 20 146

    [5]

    Lee H Y, Kim D W, Sung Y J, Yeom G Y 2005 Jpn. J. Appl. Phys. 44 1445

    [6]

    Lee H Y, Kim D W, Sung Y J, Yeom G Y 2005 Thin Solid Films 475 318

    [7]

    Leerungnawarat P, Lee K P, Pearton S J, Ren F, Chu S N G 2001 J. Electron. Mater. 30 202

    [8]

    Cai C C, Yang Y T, Li Y J, Jia H J, Ji H L 2006 Acta Phys. Sin. 55 1351 (in Chinese) [柴常春、杨银堂、李跃进、贾护军、姬慧莲 1999 物理学报 48 550]

    [9]

    Wu J, Parsons J D, Evans D R 1995 J. Electrochem. Soc. 142 669

    [10]

    Abrams C F, Graves D B 1999 J. Appl. Phys. 86 5938

    [11]

    Abrams C F, Graves D B 2000 Thin Solid Films 374 150

    [12]

    Humbird D, Graves D B 2004 J. Appl. Phys. 96 791

    [13]

    Gou F, Liang M C, Chen Z, Qian Q 2007 Appl. Surf. Sci. 253 8743

    [14]

    Gou F, Zen L T, Meng C L 2008 Thin Solid Films 516 1832

    [15]

    Winters H F, Coburn J W 1992 Surf. Sci. Rep. 14 162

    [16]

    Kota G P, Coburn J W, Graves D B 1999 J. Appl. Phys. 85 74

    [17]

    Alder B J, Walnwright T E 1957 Chem.Phys. 27 1208

    [18]

    Berendsen H J C, Postma J P M, Gunsteren W F, Dinola A, Haak J R 1984 Chem. Phys. 81 3684

    [19]

    Gou F, Kleyn A W, Gleeson M A 2008 Int. Rev. Phys. Chem. 27 229

    [20]

    Vegh J J, Humbird D, Graves D B 2005 J. Vac. Sci. Technol. A 23 1598

    [21]

    Tu Y Y, Chuang T J, Winters H F 1981 Phys. Rev. B 23 823

计量
  • 文章访问数:  8235
  • PDF下载量:  603
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-08-17
  • 修回日期:  2010-12-26
  • 刊出日期:  2011-09-15

/

返回文章
返回