一种考虑IGBT基区载流子注入条件的物理模型

杜明星; 魏克新

doi:10.7498/aps.60.108401

摘要

提出了一种考虑绝缘栅极双极晶体管(insulated gate bipolar transistor,IGBT) 基区载流子不同注入条件的物理模型. 在小注入和大注入情况下,分别建立描述IGBT基区载流子运动的输运方程(ambipolar transport equation,ATE),并确定边界条件. 采用傅里叶级数法求解载流子输运方程,并将计算结果分别与IGBT手册提供的实验数据和Hefner模型计算结果相比较,验证了本文提出物理模型的正确性.

关键词:

Abstract

A physics-based model of insulated gate bipolar transistor (IGBT) with all free-carrier injection conditions in a base region is presented, from which the ambipolar transport equations (ATEs) in high-level injection and low-level injection are deduced separately. Moreover, the boundary conditions of ATE are determined. In a more compact solution a Fourier-series solution for the ATE is used in this paper. Simulation and experimental results given by manufacturers are presented and compared with each other to validate the modeling approach. Physics-based IGBT model is used which is proved accurate.

Keywords:

作者及机构信息

1.
天津大学电气与自动化工程学院,天津 300072;天津理工大学天津市复杂系统控制理论及应用重点实验室,天津 300384

基金项目: 国家自然科学基金(批准号:50977063)、国家高技术研究发展计划(批准号:2008AA11A145)和天津市科技支撑计划重点项目(批准号:09ZCKFGX01800)资助的课题.

Authors and contacts

1.
School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072,China;Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China

参考文献

[1]	Fang J, Lin W, Zhou X D, Li Z J 2006 Acta Phys. Sin. 55 3360 (in Chinese)[方健、林薇、周贤达、李肇基 2006 物理学报 55 3360]
[2]	Hefner A R, Daniel M D 1994 IEEE Transactions on Power Electronics 9 532
[3]	Yue Y, Liou J J, Batarseh I 1996 Solid-State Electronics 39 1277
[4]	Leturcq P 1997 28th Annual IEEE Power Electronics Specialists Conference St Louis, MO, USA, 22—27 Jun, 1997 p1
[5]	Lu L, Pytel S G, Santi E, Bryant A T, Hudgins J L, Palmer P R IEEE 40th Annual Conference on Industry Application (Hong Kong, China), 2—6 October, 2005 p2635
[6]	Lu L Q, Chen Z Y, Bryant A T, Hudgins J L, Palmer P R, Santi E 2010 IEEE Transactions on Industry Applications 46 875
[7]	Cotorogea Maria 2009 IEEE Transactions on Power Electronics 24 2821
[8]	Deng Y, Zhao Z M, Yuan L Q, Hu S D, Wang X S 2010 Proceedings of the CSEE 30 1 (in Chinese)[邓夷、赵争鸣、袁立强、胡斯登、王雪松 2010 中国电机工程学报 30 1]
[9]	Mao P, Xie S J, Xu Z G 2010 Proceedings of the CSEE 30 40 (in Chinese)[毛鹏、谢少军、许泽刚 2010中国电机工程学报 30 40]
[10]	Gao J X, Zhang Y M, Tang X Y, Zhang Y M 2006 Acta Phys. Sin. 55 2992 (in Chinese)[郜锦侠、张义门、汤晓燕、张玉明 2006 物理学报 55 2992]
[11]	Leturcq P, Berraies M O, Massol J L 1996 27th Annual IEEE Power Electronics Specialists Conference Baveno, Italy, 23—27 Jun, 1996 p35
[12]	Ammous A, Ammous K, Morel H, Allard B, Bergogne D, Sellami F, Chante J P 2000 IEEE Transactions on Power Electronics 15 778
[13]	Wang L, Steve Yang 2010 Acta Phys. Sin. 59 572 (in Chinese)[王磊、杨华岳 2010 物理学报 59 572]
[14]	Palmer P R, Santi E, Hudgins J L, Xiaosong Kang, Joyce J C, Poh Yoon Eng 2003 IEEE Transactions on Power Electronics 18 1220
[15]	Igic P M, Mawby P A, Towers M S, Jamal W, Batcup S 2002 Microelectronics Reliability 42 1045
[16]	Du Bin, Hudgins J L, Santi E, Bryant A T, Palmer P R, Mantooth H A 2010 IEEE Transactions on Power Electronics 25 237

施引文献

[1]	Fang J, Lin W, Zhou X D, Li Z J 2006 Acta Phys. Sin. 55 3360 (in Chinese)[方健、林薇、周贤达、李肇基 2006 物理学报 55 3360]
[2]	Hefner A R, Daniel M D 1994 IEEE Transactions on Power Electronics 9 532
[3]	Yue Y, Liou J J, Batarseh I 1996 Solid-State Electronics 39 1277
[4]	Leturcq P 1997 28th Annual IEEE Power Electronics Specialists Conference St Louis, MO, USA, 22—27 Jun, 1997 p1
[5]	Lu L, Pytel S G, Santi E, Bryant A T, Hudgins J L, Palmer P R IEEE 40th Annual Conference on Industry Application (Hong Kong, China), 2—6 October, 2005 p2635
[6]	Lu L Q, Chen Z Y, Bryant A T, Hudgins J L, Palmer P R, Santi E 2010 IEEE Transactions on Industry Applications 46 875
[7]	Cotorogea Maria 2009 IEEE Transactions on Power Electronics 24 2821
[8]	Deng Y, Zhao Z M, Yuan L Q, Hu S D, Wang X S 2010 Proceedings of the CSEE 30 1 (in Chinese)[邓夷、赵争鸣、袁立强、胡斯登、王雪松 2010 中国电机工程学报 30 1]
[9]	Mao P, Xie S J, Xu Z G 2010 Proceedings of the CSEE 30 40 (in Chinese)[毛鹏、谢少军、许泽刚 2010中国电机工程学报 30 40]
[10]	Gao J X, Zhang Y M, Tang X Y, Zhang Y M 2006 Acta Phys. Sin. 55 2992 (in Chinese)[郜锦侠、张义门、汤晓燕、张玉明 2006 物理学报 55 2992]
[11]	Leturcq P, Berraies M O, Massol J L 1996 27th Annual IEEE Power Electronics Specialists Conference Baveno, Italy, 23—27 Jun, 1996 p35
[12]	Ammous A, Ammous K, Morel H, Allard B, Bergogne D, Sellami F, Chante J P 2000 IEEE Transactions on Power Electronics 15 778
[13]	Wang L, Steve Yang 2010 Acta Phys. Sin. 59 572 (in Chinese)[王磊、杨华岳 2010 物理学报 59 572]
[14]	Palmer P R, Santi E, Hudgins J L, Xiaosong Kang, Joyce J C, Poh Yoon Eng 2003 IEEE Transactions on Power Electronics 18 1220
[15]	Igic P M, Mawby P A, Towers M S, Jamal W, Batcup S 2002 Microelectronics Reliability 42 1045
[16]	Du Bin, Hudgins J L, Santi E, Bryant A T, Palmer P R, Mantooth H A 2010 IEEE Transactions on Power Electronics 25 237

计量

文章访问数: 8306
PDF下载量: 785
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板