准一维纳米线电子输运的梯度无序效应

段玲; 胡飞; 丁建文

doi:10.7498/aps.60.117201

摘要

考虑实际体系的梯度无序和结散射,发展格林函数矩阵分解消元方法,研究了准一维纳米线的电子输运性质. 结果表明,由于结散射,电导随能量呈现振荡行为,无序的引入破坏了电子相干性,在低无序度区平均电导呈现异常增加,呈现一个新的电导峰. 当表面存在无序但无梯度衰减时,体系的平均电导随无序度增强先减后增,出现类局域退局域性转变. 当表面无序线性衰减时,平均电导在强无序区稍有增加,而当表面无序高斯型衰减时,平均电导指数衰减,类局域退局域性转变消失,不同于以前的理论预言. 研究结果对准一维纳米线电子器件的结构设计和应用有指导作用.

关键词:

Abstract

Considering both the gradient decay of the real disorder and the contact scattering, we investigate the electronic transport in quasi-one-dimensional nanowires by developing a decomposition elimination method for Green's function matrix. In the presence the contact scattering, the conductance oscillates with energy. For some energies of incident electrons, an abnormal enhancement is obtained in the average conductance due to the destroyed coherence by the introduction of much low disorder, showing that there appears a new conductance peak. In the absence of disorder gradient, the average conductance firstly decreases then increases with disorder strength, indicating that there exists a localization-delocalization transition. In the presence of linearly decaying disorder, the average conductance increases slightly in a strong disorder region. In the case of the Gaussian-type decaying disorder, the average conductance decreases exponentially and the localization-delocalization transition disappears, which is different from previous thereotical result. The results are helpful for the design and the application of quasi-one-dimensional nanowires device.

Keywords:

作者及机构信息

1.
湘潭大学物理系,纳米物理与稀土发光研究所,湘潭 411105;

2.
湘潭大学低维材料及其应用技术教育部重点实验室,湘潭 411105

基金项目: 国家自然科学基金(批准号:10674113,11074212)和全国优秀博士学位论文作者专项基金(批准号:200726)资助的课题.

Authors and contacts

1.
Department of Physics, Institute of Nanophysics and Rare-earth Luminescence, Xiangtan 411105, China;

2.
Key Laboratory of Low Dimensional Materials and Application Technology, Xiangtan University, Xiangtan 411105, China

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施引文献

[1]	Aharonov Y, Bohm D 1959 Phys. Rev. 115 485
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[17]	Xia Y, Yang P, Sun Y, Wu Y, Mayers B, Gates B, Yin Y, Kim F, Yan H 2003 Adv. Mater. 15 353
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[19]	Cui Y,Wang Q Q, Park H K, Lieber C 2001 Science 293 1289
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[23]
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[27]	Duan X, Huang Y, Cui Y, Wang J, Lieber C 2001 Nature 409 66
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[30]
[31]	Lee P A, Ramakrishnan T V 1985 Rev. Mod. Phys. 57 287
[32]
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[47]	Zhong J X, Stocks G M 2006 Nano Lett. 6 128
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[50]	Cuevas E, Louis E, Vergs J 1996 Phys. Rev. Lett. 77 1970
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