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通过考虑体散射、界面电荷的库仑散射以及 Al2O3/InxGa1-xAs 界面粗糙散射等主要散射机理, 建立了以 Al2O3为栅介质InxGa1-xAs n 沟金属-氧化物-半导体场效应晶体管 (nMOSFETs) 反型沟道电子迁移率模型, 模拟结果与实验数据有好的符合. 利用该模型分析表明, 在低至中等有效电场下, 电子迁移率主要受界面电荷库仑散射的影响; 而在强场下, 电子迁移率则取决于界面粗糙度散射. 降低界面态密度, 减小 Al2O3/InxGa1-xAs 界面粗糙度, 适当提高In含量并控制沟道掺杂在合适值是提高 InGaAs nMOSFETs 反型沟道电子迁移率的主要途径.An inversion-channel electron mobility model for InxGa1-xAs n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with Al2O3 as gate dielectric is established by considering main scattering mechanisms of bulk scattering, Coulomb scattering of interface charges and interface- roughness scattering of the Al2O3/InxGa1-xAs interface. The simulated results are in good agreement with the experimental data. Analyses by using the model indicate that the total electron mobility is mainly limited by the Coulomb scattering of interface charges under weak and medium effective fields and by the interface-roughness scattering under strong effective fields. Therefore, the effective approaches of enhancing the inversion-channel electron mobility are to reduce the interface-state density and roughness of the Al2O3/InxGa1-xAs interface, to properly increase the in content and control the doping concentration of the InxGa1-xAs channel to a suitable value.
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Keywords:
- InGaAs /
- MOSFET /
- inversion-channel electron mobility /
- scattering mechanisms
[1] Zhang Z F, Zhang H M, Hu H Y, Xuan R Y, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 物理学报 58 4948]
[2] Zou X 2007 Ph.D. Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese) [邹晓 2007 博士学位论文 (武汉: 华中科技大学)]
[3] Khairurrijal, Mizubayashi W, Miyazaki S, Hirose M 2000 J. Appl. Phys. 87 3000
[4] Larcher L, Paccagnella A, Ghidini G 2001 IEEE Transactions on Electron Device 48 271
[5] Hansen K, Brandbyge M 2004 J. Appl. Phys. 95 3582
[6] Zhang X F, Qiu Y Z, Zhang Z J, Chen Y, Huang J, Wang Z L, Xu J P 2010 Research & Progress of Solid State Electronics 30 180 (in Chinese) [张雪峰, 邱云珍, 张振娟, 陈云, 黄静, 王志亮, 徐静平 2010 固体电子学研究与进展 30 180]
[7] Hill R J W, Droopad R, Moran D A J, Li X, Zhou H, Macint Y D, Thoms S, Ignatova O, Asenov A, Rajagopalan K, Fejes P, Thayne I G, Passlack M 2008 Electronics Letters 44 498
[8] Xuan Y, Wu Y Q, Lin H C, Shen T, Ye P D 2007 IEEE Electron Device Letters 28 935
[9] Rim K, Koester S, Hargrove M, Chu J, Mooney P M, Ott J, Kanarsky T, Ronsheim P, Ieong M, Grill A, Wong H S P 2001 Tech. Dig. VLSI Symp. 4-89114-012-7 59
[10] Lee C H, Nishimura T, Saido N, Nagashio K, Kita K, Toriumi A 2009 Tech. Dig. in. Electron Devices Meet Baltimore, MD, USA, Dec. 7-9 2009 p1(Piscataway, NJ, USA: IEEE)
[11] O’Regan T P, Fischetti M V, Sorée B, Jin S, Magnus W, Meuris M 2010 Journal of Applied Physics 108 103705
[12] Wang W K, Hwang J C M, Xuan Y, Ye P D 2011 IEEE Transactions on Electro Devices 58 1972
[13] Sotoodeh M, Khalid A H, Rezazadeh A A 2000 J. Appl. Phys. 87 2890
[14] Zou X, Xu J P, Chen W B, Wu H P 2005 Micro Electronics 35 465 (in Chinese) [邹晓, 徐静平, 陈卫兵, 吴海平 2005 微电子学 35 465]
[15] Li B, Liu H X, Yuan B, Li J, Lu F M 2011 Acta Phys. Sin. 60 017202-1 (in Chinese) [李斌, 刘红侠, 袁博, 李劲, 卢凤铭 2011 物理学报 60 017202-1]
[16] Stephen K P, Neil G, James M M, Bernstein J, Scozzie C J, Lelis A 2002 J. Appl. Phys. 92 4053
[17] Zhang X F, Xu J P, Zou X, Zhang L J 2006 Chinese Journal of Semiconductors 27 2000 (in Chinese) [张雪峰, 徐静平, 邹晓, 张兰君 2006 半导体学报 27 2000]
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[1] Zhang Z F, Zhang H M, Hu H Y, Xuan R Y, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 物理学报 58 4948]
[2] Zou X 2007 Ph.D. Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese) [邹晓 2007 博士学位论文 (武汉: 华中科技大学)]
[3] Khairurrijal, Mizubayashi W, Miyazaki S, Hirose M 2000 J. Appl. Phys. 87 3000
[4] Larcher L, Paccagnella A, Ghidini G 2001 IEEE Transactions on Electron Device 48 271
[5] Hansen K, Brandbyge M 2004 J. Appl. Phys. 95 3582
[6] Zhang X F, Qiu Y Z, Zhang Z J, Chen Y, Huang J, Wang Z L, Xu J P 2010 Research & Progress of Solid State Electronics 30 180 (in Chinese) [张雪峰, 邱云珍, 张振娟, 陈云, 黄静, 王志亮, 徐静平 2010 固体电子学研究与进展 30 180]
[7] Hill R J W, Droopad R, Moran D A J, Li X, Zhou H, Macint Y D, Thoms S, Ignatova O, Asenov A, Rajagopalan K, Fejes P, Thayne I G, Passlack M 2008 Electronics Letters 44 498
[8] Xuan Y, Wu Y Q, Lin H C, Shen T, Ye P D 2007 IEEE Electron Device Letters 28 935
[9] Rim K, Koester S, Hargrove M, Chu J, Mooney P M, Ott J, Kanarsky T, Ronsheim P, Ieong M, Grill A, Wong H S P 2001 Tech. Dig. VLSI Symp. 4-89114-012-7 59
[10] Lee C H, Nishimura T, Saido N, Nagashio K, Kita K, Toriumi A 2009 Tech. Dig. in. Electron Devices Meet Baltimore, MD, USA, Dec. 7-9 2009 p1(Piscataway, NJ, USA: IEEE)
[11] O’Regan T P, Fischetti M V, Sorée B, Jin S, Magnus W, Meuris M 2010 Journal of Applied Physics 108 103705
[12] Wang W K, Hwang J C M, Xuan Y, Ye P D 2011 IEEE Transactions on Electro Devices 58 1972
[13] Sotoodeh M, Khalid A H, Rezazadeh A A 2000 J. Appl. Phys. 87 2890
[14] Zou X, Xu J P, Chen W B, Wu H P 2005 Micro Electronics 35 465 (in Chinese) [邹晓, 徐静平, 陈卫兵, 吴海平 2005 微电子学 35 465]
[15] Li B, Liu H X, Yuan B, Li J, Lu F M 2011 Acta Phys. Sin. 60 017202-1 (in Chinese) [李斌, 刘红侠, 袁博, 李劲, 卢凤铭 2011 物理学报 60 017202-1]
[16] Stephen K P, Neil G, James M M, Bernstein J, Scozzie C J, Lelis A 2002 J. Appl. Phys. 92 4053
[17] Zhang X F, Xu J P, Zou X, Zhang L J 2006 Chinese Journal of Semiconductors 27 2000 (in Chinese) [张雪峰, 徐静平, 邹晓, 张兰君 2006 半导体学报 27 2000]
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