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利用化学镀方法对多壁碳纳米管(multi-walled carbon nanotubes,MWNTs)表面金属化镀镍(MWNTs/Ni),采用丝网印刷制备MWNTs/Ni场发射阴极,并在磁场辅助下热处理所得阴极,研究磁场辅助热处理对MWNTs/Ni阴极的场发射性能的影响. 经300 mT磁场辅助热处理的MWNTs/Ni的场发射阴极开启场强约为0.80 V-1,场增强因子 约为16068. 对单根MWNTs/Ni在磁场中的受力情况进行建模分析,实验结果表明:磁场辅助热处理有助于提高MWNTs/Ni在阴极表面的直立分布,提高了MWNTs/Ni的场发射性能.The effect of magnetic field assisted heat-treatment on the field emission properties of metalized multi-walled carbon nanotubes (MWNTs) is investigated. The metalized MWNTs are prepared via an electroless plating method, and then the MWNTs/Ni cathodes are fabricated by screen printing. The morphology and composition of MWNTs/Ni were studied by transmission electron microscopy and energy dispersive X-ray detector, and the difference between MWNTs/Ni cathodes heat-treated with or without magnetic field was observed by scanning electron microscopy. The force of a single MWNT coated with Ni was simulated, and the results demonstrate that the magnetic field force could induce the rotation of MWNTs/Ni during magnetic field assisted heat-treatment. The field emission characteristics show that the MWNTs/Ni cathodes heat-treated with magnetic field has a low turn-on field of 0.80 Vm-1 and high field enhancement factor of 16068, which are attributed to the embossment of MWNTs/Ni from substrates under the magnetic field.
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Keywords:
- field emission /
- metalized multi-walled carbon nanotubes /
- magnetic field /
- electroless plating
[1] Iijima S 1991 Nature 354 56
[2] Hu X Y, Wang S M, Pei Y H, Tian H W, Zhu P W 2013 Acta Phys. Sin. 62 038101 (in Chinese) [胡小颖, 王淑敏, 裴艳慧, 田宏伟, 朱品文 2013 物理学报 62 038101]
[3] [4] [5] Gu G R, Ito T 2009 Chin. Phys. B 18 4547
[6] Shrestha S, Choi W C, Song W, Kwon Y T, Shrestha S P, Park C Y 2010 Carbon 48 54
[7] [8] [9] Rakhi R B, Lim X, Gao X, Wang Y, Wee A T S, Sethupathi K, Ramaprabhu S, Sow C H 2010 Appl. Phys. A 98 195
[10] [11] Kyung S J, Park J B, Voronko M, Lee J H, Yeom G Y 2007 Carbon 45 649
[12] Yu J, Chen J, Deng S Z, Xu N S 2011 Appl. Surf. Sci. 258 738
[13] [14] Kim Y C, Sohn K H, Cho Y M, Yoo E H 2004 Appl. Phys. Lett. 84 5350
[15] [16] Tasi I S, Huang C W, Huang H K, Jehng J M, Pan T C 2008 Journal of SID Shanghai China, March 12-15, 2007 p639
[17] [18] Ajiki H, Ando T 1993 J. Phy. Soc. Jpn. 62 2470
[19] [20] Anshu S, Balram T, Vijay Y K 2010 J. Mem. Sci. 361 89
[21] [22] Fujiwara M, Oki E, Hamada M, Tonimoto Y 2001 J. Phys. Chem. A 105 4383
[23] [24] Jang B K, Sakka Y 2009 Mater. Lett. 63 2545
[25] [26] [27] Lee S H, Ma C C M, Yuen S M, Teng C C, Liao S H, Huang Y L, Tsai M C, Su A, Wang I 2011 Thin Solid Films 519 4166
[28] [29] Lee S H, Ma C C M, Yuen S M, Teng C C, Yen M Y, Huang Y L, Yu K C 2012 Diamon Related Mater. 25 111
[30] Zheng L W, Hu L Q, Xiao X J, Yang F, Lin H, Guo T L 2011 Chin. Phys. B 20 128502
[31] [32] [33] Zhou Z Y, Wang Z L, Lin L W 2007 MEMS and Na-notechnology (Vol. 3) (Beijing: Science Press) p486 (in Chinese) [周兆英, 王中林, 林立伟 2007 微系统和纳米技术 (第3卷) (北京: 科学出版社) 第486页]
[34] Sano N, Naito M, Kikuchi T 2007 Carbon 45 78
[35] [36] Liu G L, Yang Z H, Fang G L 2009 Acta Phys. Sin. 58 3364 (in Chinese) [刘贵立, 杨忠华, 方戈亮 2009 物理学报 58 3364]
[37] [38] [39] Yang C J, Park J I, Cho Y R 2007 Adv. Eng. Mater. 9 88
[40] [41] Vink T J, Gillies M, Kriege J C, Laar H W J J 2003 Appl. Phys. Lett. 83 3552
[42] Ding H, Feng T, Zhang Z J, Wang K, Qian M, Chen Y W, Sun Z 2010 Appl. Surf. Sci. 256 6595
[43] [44] Lee H J, Lee Y D, Cho W S, Ju B K 2006 Appl. Phys. Lett. 88 093115
[45] [46] [47] L W H, Zhang S 2012 Acta Phys. Sin. 61 018801 (in Chinese) [吕文辉, 张帅 2012 物理学报 61 018801]
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[1] Iijima S 1991 Nature 354 56
[2] Hu X Y, Wang S M, Pei Y H, Tian H W, Zhu P W 2013 Acta Phys. Sin. 62 038101 (in Chinese) [胡小颖, 王淑敏, 裴艳慧, 田宏伟, 朱品文 2013 物理学报 62 038101]
[3] [4] [5] Gu G R, Ito T 2009 Chin. Phys. B 18 4547
[6] Shrestha S, Choi W C, Song W, Kwon Y T, Shrestha S P, Park C Y 2010 Carbon 48 54
[7] [8] [9] Rakhi R B, Lim X, Gao X, Wang Y, Wee A T S, Sethupathi K, Ramaprabhu S, Sow C H 2010 Appl. Phys. A 98 195
[10] [11] Kyung S J, Park J B, Voronko M, Lee J H, Yeom G Y 2007 Carbon 45 649
[12] Yu J, Chen J, Deng S Z, Xu N S 2011 Appl. Surf. Sci. 258 738
[13] [14] Kim Y C, Sohn K H, Cho Y M, Yoo E H 2004 Appl. Phys. Lett. 84 5350
[15] [16] Tasi I S, Huang C W, Huang H K, Jehng J M, Pan T C 2008 Journal of SID Shanghai China, March 12-15, 2007 p639
[17] [18] Ajiki H, Ando T 1993 J. Phy. Soc. Jpn. 62 2470
[19] [20] Anshu S, Balram T, Vijay Y K 2010 J. Mem. Sci. 361 89
[21] [22] Fujiwara M, Oki E, Hamada M, Tonimoto Y 2001 J. Phys. Chem. A 105 4383
[23] [24] Jang B K, Sakka Y 2009 Mater. Lett. 63 2545
[25] [26] [27] Lee S H, Ma C C M, Yuen S M, Teng C C, Liao S H, Huang Y L, Tsai M C, Su A, Wang I 2011 Thin Solid Films 519 4166
[28] [29] Lee S H, Ma C C M, Yuen S M, Teng C C, Yen M Y, Huang Y L, Yu K C 2012 Diamon Related Mater. 25 111
[30] Zheng L W, Hu L Q, Xiao X J, Yang F, Lin H, Guo T L 2011 Chin. Phys. B 20 128502
[31] [32] [33] Zhou Z Y, Wang Z L, Lin L W 2007 MEMS and Na-notechnology (Vol. 3) (Beijing: Science Press) p486 (in Chinese) [周兆英, 王中林, 林立伟 2007 微系统和纳米技术 (第3卷) (北京: 科学出版社) 第486页]
[34] Sano N, Naito M, Kikuchi T 2007 Carbon 45 78
[35] [36] Liu G L, Yang Z H, Fang G L 2009 Acta Phys. Sin. 58 3364 (in Chinese) [刘贵立, 杨忠华, 方戈亮 2009 物理学报 58 3364]
[37] [38] [39] Yang C J, Park J I, Cho Y R 2007 Adv. Eng. Mater. 9 88
[40] [41] Vink T J, Gillies M, Kriege J C, Laar H W J J 2003 Appl. Phys. Lett. 83 3552
[42] Ding H, Feng T, Zhang Z J, Wang K, Qian M, Chen Y W, Sun Z 2010 Appl. Surf. Sci. 256 6595
[43] [44] Lee H J, Lee Y D, Cho W S, Ju B K 2006 Appl. Phys. Lett. 88 093115
[45] [46] [47] L W H, Zhang S 2012 Acta Phys. Sin. 61 018801 (in Chinese) [吕文辉, 张帅 2012 物理学报 61 018801]
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