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采用wx-AMPS模拟软件对硒化锑（Sb2Se3）薄膜太阳电池进行建模仿真，将CdS，ZnO和SnO2的模型应用到Sb2Se3太阳电池的电子传输层中.结果显示，应用CdS和ZnO都能实现较高的器件性能，并发现电子传输层电子亲和势（χe-ETL）的变化能够调节Sb2Se3太阳电池内部的电场分布，是影响器件性能的关键参数之一.过高或者过低的χe-ETL都会使电池的填充因子降低，导致电池性能劣化.当χe-ETL为4.2 eV时，厚度为0.6 μm的Sb2Se3太阳电池取得了最优的7.87%的转换效率.应用优化好的器件模型，在不考虑Sb2Se3层缺陷态的理想情况下，厚度为3 μm的Sb2Se3太阳电池的转换效率可以达到16.55%（短路电流密度Jsc=34.88 mA/cm2、开路电压Voc=0.59 V、填充因子FF=80.40%）.以上模拟结果表明，Sb2Se3薄膜太阳电池在简单的器件结构下就能够获得优异的光电性能，具有较高的应用潜力.In this paper, the wx-AMPS simulation software is used to model and simulate the antimony selenide (Sb2Se3) thin film solar cells. Three different electron transport layer models (CdS, ZnO and SnO2) are applied to the Sb2Se3 solar cells, and the conversion efficiencies of which are obtained to be 7.35%, 7.48% and 6.62% respectively. It can be seen that the application of CdS and ZnO can achieve a better device performance. Then, the electric affinity of the electron transport layer (χe-ETL) is adjusted from 3.8 eV to 4.8 eV to study the effect of the energy band structure change on the solar cell performance. The results show that the conversion efficiency of the Sb2Se3 solar cell first increases and then decreases with the increase of the χe-ETL. The lower χe-ETL creates a barrier at the interface between the electron transport layer and the Sb2Se3 layer, which can be considered as a high resistance layer, resulting in the increase of series resistance. On the other hand, when the χe-ETL is higher than 4.6 eV, the electric field of the electron transport layer can be reversed, leading to the accumulation of the photon-generated carriers at the interface between the transparent conductive film and the electron transport layer, which could also hinder the carrier transport and increase the series resistance. At the same time, the electric field of Sb2Se3 layer becomes weak with the value of χe-ETL increasing according to the band structure of the Sb2Se3 solar cell, leading to the increase of the carriers' recombination and the reduction of the cell parallel resistance. As a result, too high or too low χe-ETL can lower the FF value and cause the device performance to degrade. Thus, to maintain high device performance, from 4.0 eV to 4.4 eV is a suitable range for the χe-ETL of the Sb2Se3 solar cell. Moreover, based on the optimization of the χe-ETL, the enhancement of the Sb2Se3 layer material quality can further improve the solar cell performance. In the case of removing the defect states of the Sb2Se3 layer, the conversion efficiency of the Sb2Se3 solar cell with a thickness of 0.6 μm is significantly increased from 7.87% to 12.15%. Further increasing the thickness of the solar cell to 3 μm, the conversion efficiency can be as high as 16.55% (Jsc=34.88 mA/cm2, Voc=0.59 V, FF=80.40%). The simulation results show that the Sb2Se3 thin film solar cells can obtain excellent performance with simple device structure and have many potential applications.
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Keywords:
- antimony selenide /
- electron transport layer /
- thin film solar cell /
- wx-AMPS
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[1] Lee T D, Ebong A U 2017 Renew. Sustain. Energy Rev. 70 1286
[2] Bosio A, Rosa G, Romeo N 2018 Sol. Energy DOI: 10.1016/j.solener.2018.01.018
[3] Bermudez V 2017 Sol. Energy 146 85
[4] Yang W S, Noh J H, Jeon N J, Kim Y C, Ryu S, Seo J, Seok S 2015 Science 348 1234
[5] Chen C, Li W, Zhou Y, Chen C, Luo M, Liu X, Zeng K, Yang B, Zhang C, Han J, Tang J 2015 Appl. Phys. Lett. 107 043905
[6] Zhou Y, Leng M, Xia Z, Zhong J, Song H, Liu X, Yang B, Zhang J, Chen J, Zhou K, Han J, Cheng Y, Tang J 2014 Adv. Energy Mater. 4 1301846
[7] Choi Y C, Mandal T N, Yang W S, Lee Y H, Im S H, Noh J H, Seok S 2014 Angew. Chem. 126 1353
[8] Yuan C, Zhang L, Liu W, Zhu C 2016 Sol. Energy 137 256
[9] Liang G X, Zheng Z H, Fan P, Luo J T, Hu J G, Zhang X H, Ma H L, Fan B, Luo Z K, Zhang D P 2018 Sol. Energy Mater. Sol. Cells 174 263
[10] Zhao B, Wan Z, Luo J, Han F, Malik H A, Jia C, Liu X, Wang R 2018 Appl. Surf. Sci. 450 228
[11] Liu X, Xiao X, Yang Y, Xue D J, Li D B, Chen C, Lu S, Gao L, He Y, Beard M C, Chen S, Tang J 2017 Prog. Photovolt.: Res. Appl. 25 861
[12] Zhou Y, Wang L, Chen S, Qin S, Liu X, Chen J, Xue D J, Luo M, Cao Y, Cheng Y, Sargent E H, Tang J 2015 Nat. Photon. 9 409
[13] Shen K, Ou C, Hang T, Zhu H, Li J, Li Z, Mai Y 2018 Sol. Energy Mater. Sol. Cells 186 58
[14] Wang L, Li D B, Li K, Chen C, Deng H X, Gao L, Zhao Y, Jiang F, Li L, Huang F, He Y, Song H, Niu G, Tang J 2017 Nat. Energy 2 17046
[15] Chen C, Zhao Y, Lu S, Li K, Li Y, Yang B, Chen W, Wang L, Li D, Deng H, Yi F, Tang J 2017 Adv. Energy Mater. 7 1700866
[16] Lu S, Zhao Y, Chen C, Zhou Y, Li D, Li K, Chen W, Wen X, Wang C, Kondrotas R, Lowe N, Tang J 2018 Adv. Electron. Mater. 4 1700329
[17] Patrick C E, Giustino F 2011 Adv. Funct. Mater. 21 4663
[18] Wen X, Chen C, Lu S, Li K, Kondrotas R, Zhao Y, Chen W, Gao L, Wang C, Zhang J, Niu G, Tang J 2018 Nat. Commun. 9 2179
[19] Liu Y, Sun Y, Rockett A 2012 Sol. Energy Mater. Sol. Cells 98 124
[20] Yaşar S, Kahraman S, Çetinkaya S, Apaydin S, Bilican I, Uluer I 2016 Optik 127 8827
[21] Gloeckler M, Fahrenbruch A L, Sites J R 2003 Proceedings of 3rd World Conference on Photovoltaic Energy Conversion Osaka, Japan, May 11-18, 2003 p491
[22] Chen C, Bobela D C, Yang Y, Lu S, Zeng K, Ge C, Yang B, Gao L, Zhao Y, Beard M C, Tang J 2017 Front. Optoelectron. 10 18
[23] Zhang L, Li Y, Li C, Chen Q, Zhen Z, Jiang X, Zhong M, Zhang F, Zhu H 2017 ACS Nano 11 12753
[24] Lin L, Jiang L, Qiu Y, Fan B 2018 J. Phys. Chem. Solids 122 19
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