自旋电子太赫兹源研究进展

许涌; 张帆; 张晓强; 杜寅昌; 赵海慧; 聂天晓; 吴晓君; 赵巍胜

doi:10.7498/aps.69.20200623

摘要

太赫兹频段在电磁波谱上位于红外和微波之间, 兼具宽带性、低能性、高透性、指纹性等诸多优势特性, 在航空航天、无线通信、国防安全、材料科学、生物医疗等领域具有重要的应用前景. 太赫兹科学与技术的发展和应用在很大程度上受限于源的水平, 新型太赫兹辐射源的机理研究和器件研制至关重要. 自旋太赫兹发射不仅从物理上提供了操控飞秒自旋流的可能, 而且有望成为下一代超宽带、低成本、高效率新型太赫兹源的优选. 本文系统地综述了自旋电子太赫兹源的发展历程、实验装置、发射机理、材料选择, 以及前景展望, 重点介绍了飞秒激光诱导的超快自旋流、铁磁和非磁界面的自旋电荷转换以及太赫兹发射等物理机制方面的研究进展. 本文还分别介绍了基于重金属、拓扑绝缘体、Rashba界面和半导体等体系的自旋电子太赫兹源.

关键词:

Abstract

The terahertz frequency band is located between infrared and microwave in the electromagnetic spectrum. The interesting properties such as broadband, low energy, high permeability, fingerprint, etc. make terahertz wave important for applications in the fields of aerospace, wireless communications, security, materials science, biomedicine, etc. The development and application of terahertz science and technology are largely limited by the terahertz sources, therefore it is crucial to develop new terahertz radiation sources. Recently, it was shown that terahertz spintronic not only provides the possibility of physically controlling the femtosecond spin current, but also expects to be the next-generation ultra-wideband, low-cost, high-efficiency terahertz sources. In this paper we systematically review the historical development, experimental devices, emission mechanisms, material selections, and future prospects of the spintronic terahertz sources. We present the research advances in the physical mechanisms of ultrafast spin current induced by femtosecond laser, the spin charge conversion at ferromagnetic and non-magnetic interfaces, and the terahertz emission triggered by ultrafast pulses. This review also introduces spintronic terahertz sources based on heavy metals, topological insulators, Rashba interfaces, and semiconductor systems.

Keywords:

terahertz source /
ferromagnetic/non-magnetic heterostructure /
ultrafast demagnetization /
spin-charge conversion

作者及机构信息

1.
北京航空航天大学微电子学院, 大数据科学与脑机智能高精尖创新中心, 北京　100191

2.
北京航空航天大学合肥创新研究院, 合肥　230012

3.
北京航空航天大学电子信息工程学院, 北京　100191

通信作者: 吴晓君, xiaojunwu@buaa.edu.cn ; 赵巍胜, weisheng.zhao@buaa.edu.cn

基金项目: 国家自然科学基金(批准号: 11904016, 61905007, 61627813)、北航合肥创新研究院项目(批准号: BHKX-19-01, BHKX-19-02)和北京市自然科学基金(批准号: 4194083)资助的课题

Authors and contacts

1.
Beijing Advanced Innovation Certer for Big Data and Brain Computing, School of Microelectronics, Beihang University, Beijing 100191, China

2.
Hefei Innovation Research Institute, Beihang University, Hefei 230012, China

3.
School of Electronic and Information Engineering, Beihang University, Beijing 100191, China

Corresponding author: Wu Xiao-Jun, xiaojunwu@buaa.edu.cn ; Zhao Wei-Sheng, weisheng.zhao@buaa.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11904016, 61905007, 61627813), the Beihang Hefei Innovation Research Institute Project, China (Grant Nos. BHKX-19-01, BHKX-19-02), and the Beijing Natural Science Foundation, China (Grant No. 4194083)

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施引文献

图 1 透射式太赫兹发射谱仪的光路示意图

Fig. 1. Schematic diagram of experimental setup of spintronic terahertz emission spectroscopy in transmission geometry.

下载: 全尺寸图片幻灯片

图 2 铁磁/非磁异质结太赫兹发射　(a)时域波形; (b)频谱

Fig. 2. The time-domain waveform and frequency-domain spectrum of the terahertz wave emitted by FM/NM heterostructures:　(a) The time-domain waveform; (b) frequency-domain spectrum.

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图 3 面内磁化的铁磁薄膜FM被飞秒激光激发, 自旋极化的非平衡热电子注入非磁层. 根据逆自旋霍尔效应, 多数电子和少数电子在不同方向偏转, 从而将纵向自旋流转换为横向的电荷流, 产生了太赫兹发射

Fig. 3. The in-plane magnetized ferromagnetic layer is excited by the femtosecond laser, which induces the injection of non-equilibrium spin-polarized hot electrons into the non-magnetic layer. The spin-majority electrons and the spin-minority electrons are deflected into opposite directions due to inverse spin Hall effect. The longitudinal spin current is converted into a transverse electric current and leads to the terahertz emission.

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图 4 (a)拓扑绝缘体表面的能量色散关系图; (b) Rashba界面的能量色散关系图, Rashba界面态和拓扑绝缘体表面态中形成了强烈的自旋-动量锁定; (c)拓扑绝缘体表面的逆Edelstein效应; (d) Rashba界面的逆Edelstein效应, 注入y极化的自旋流密度诱导出x方向的电荷流^[57]

Fig. 4. (a) Energy dispersion of the Rashba interface; (b) energy dispersion of the topological insulator. Strong spin-momentum locking can be observed in interface states of the Rashba interface and surface states of the topological insulator; (c) the inverse Edelstein effect of Rashba interfaces; (d) the inverse Edelstein effect of topological insulator surface states. The y-polarized spin current induces a charge current in the x direction^[57].

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