Ti, N共掺杂4H-SiC复合增强缓冲层生长及其对PiN二极管正向性能稳定性的改善

李传纲; 鞠涛; 张立国; 李杨; 张璇; 秦娟; 张宝顺; 张泽洪

doi:10.7498/aps.70.20200921

摘要

“双极型退化”现象严重阻碍了4H-SiC双极型器件如PiN二极管等的产品化, 其微观机理是电子-空穴复合条件下层错由基面位错处的扩展. 为遏制“双极型退化”现象, 不仅要消除漂移层中的基面位错, 还需要通过生长复合增强缓冲层的方法阻止少子空穴到达含高密度基面位错片段的外延层/衬底界面. 本文采用钛、氮共掺杂的方式进行缓冲层的生长, 通过钛掺杂进一步降低缓冲层中的少子寿命. 首先确定了钛掺杂浓度和钛源摩尔流量之间的定量关系, 在此基础上制备了含钛、氮共掺杂缓冲层结构的4H-SiC PiN二极管, 并在正向电流密度100 A/cm²的条件下保持10 min, 测量其正向压降随时间的变化. 与无缓冲层结构、仅含高浓度氮掺杂缓冲层结构的4H-SiC PiN二极管相比, 含钛、氮共掺杂缓冲层的二极管的正向压降稳定性得到了明显改善.

关键词:

Abstract

“Bipolar degradation” phenomenon has severely impeded the development of 4H-SiC bipolar devices. Their defect mechanism is the expansion of Shockley-type stacking faults from basal plane dislocations under the condition of electron-hole recombination. To suppress the “bipolar degradation” phenomenon, not only do the basal plane dislocations in the 4H-SiC drift layer need eliminating, but also a recombination-enhancing buffer layer is required to prevent the minority carriers of holes from reaching the epilayer/substrate interface where high-density basal plane dislocation segments exist. In this paper, Ti and N co-doped 4H-SiC buffer layers are grown to further shorten the minority carrier lifetime. Firstly, the dependence of Ti doping concentration on TiCl₄ flow rate in 4H-SiC epilayers is determined by using single-dilution gas line and double-dilution gas line. Then the p⁺ layer and p⁺⁺ layer in PiN diode are obtained by aluminum ion implantation at room temperature and 500 ℃ followed by high temperature activation annealing. Finally, 4H-SiC PiN diodes with a Ti, N co-doped buffer layer are fabricated and tested with a forward current density of 100 A/cm² for 10 min. Comparing with the PiN diodes without a buffer layer and with a buffer layer only doped with high concentration of nitrogen, the forward voltage drop stability of those diodes with a 2 μm-thick Ti, N co-doped buffer layer (Ti: 3.70 × 10¹⁵ cm^–3 and N: 1.01 × 10¹⁹ cm^–3) is greatly improved.

Keywords:

作者及机构信息

1.
上海大学材料科学与工程学院, 上海　200444

2.
中国科学院苏州纳米技术与纳米仿生研究所, 苏州　215123

通信作者: 秦娟, juan_qin@staff.shu.edu.cn ; 张宝顺, bszhang2006@sinano.ac.cn ;

基金项目: 国家自然科学基金青年科学基金(批准号: 61804166)资助的课题

Authors and contacts

1.
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China

2.
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Corresponding author: Qin Juan, juan_qin@staff.shu.edu.cn ; Zhang Bao-Shun, bszhang2006@sinano.ac.cn ;

Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61804166)

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参考文献

[1]	Lendenmann H, Dahlquist F, Johansson N, Soderholm R, Nilsson P A, Bergman J P, Skytt P 2001 Mater. Sci. Forum. 353–356 727 Google Scholar
[2]	Skowronski M, Liu J Q, Vetter W M, Dudley M, Hallin C, Lendenmann H 2002 J. Appl. Phys. 92 4699 Google Scholar
[3]	Caldwell J D, Stahlbush R E, Ancona M G, Glembocki O J, Hobart K D 2010 J. Appl. Phys. 108 044503 Google Scholar
[4]	Maeda K, Hirano R, Sato Y, Tajima M 2012 Mater. Sci. Forum. 725 35 Google Scholar
[5]	Ha S, Mieszkowski P, Skowronski M, Rowland L B 2002 J. Cryst. Growth 244 257 Google Scholar
[6]	Tsuchida H, Kamata I, Miyazawa T, Ito M, Zhang X, Nagano M 2018 Mater. Sci. Semicond. Process. 78 2 Google Scholar
[7]	Tanaka A, Matsuhata H, Kawabata N, Mori D, Inoue K, Ryo M, Fujimoto T, Tawara T, Miyazato M, Miyajima M, Fukuda K, Ohtsuki A, Tomohisa T, Tsuchida H, Yonezawa Y, Kimoto T 2016 J. Appl. Phys. 119 095711 Google Scholar
[8]	Sumakeris J J, Bergman P, Das M K, Hallin C, Hull B A, Janzen E, Lendenmann H, O’Loughlin M J, Paisley M J, Ha S Y, Skowronski M, Palmour J W, Carter Jr C H 2006 Mater. Sci. Forum. 527-529 141 Google Scholar
[9]	Hori T, Danno K, Kimoto T 2007 J. Cryst. Growth. 306 297 Google Scholar
[10]	Stahlbush R E, VanMil B L, Myers Ward R L, Lew K K, Gaskill D K, Eddy Jr C R 2009 Appl. Phys. Lett. 94 041916 Google Scholar
[11]	Mahadik N A, Stahlbush R E, Ancona M G, Lmhoff E A, Hobart K D, Myers-Ward R L, Eddy Jr C R, Gaskill D K, Kub F J 2012 Appl. Phys. Lett. 100 042102 Google Scholar
[12]	Tawara T, Miyazawa T, Ryo M, Miyazato M, Fujimoto T, Takenaka K, Matsunaga S, Miyajima M, Otsuki A, Yonezawa Y, Kato T, Okumura H, Kimoto T, Tsuchida H 2016 J. Appl. Phys. 120 115101 Google Scholar
[13]	Miyazawa T, Tawara T, Tsuchida H 2017 Mater. Sci. Forum. 897 67 Google Scholar
[14]	Miyazawa T, Tawara T, Takanashi R, Tsuchida H 2016 Appl. Phys. Express 9 111301 Google Scholar
[15]	Murata K, Tawara T, Yang A, Takanashi R, Miyazawa T, Tsuchida H 2019 J. Appl. Phys. 126 045711 Google Scholar
[16]	Tawara T, Miyazawa T, Ryo M, Miyazato M, Fujimoto T, Takenaka K, Matsunaga S, Miyajima M, Otsuki A, Yonezawa Y, Kato T, Okumura H, Kimoto T, Tsuchida H 2017 Mater. Sci. Forum. 897 419 Google Scholar
[17]	Dalibor T, Pensl G, Matsunami H, Kimoto T, Choyke W J, Schoner A, Nordell N 1997 Phys. Status Solidi A 162 199 Google Scholar
[18]	Hobgood H M, Glass R C, Augustine G, Hopkins R H, Jenny J, Skowronski M, Mitchel W C, Roth M 1995 Appl. Phys. Lett. 66 1364 Google Scholar
[19]	Dalibor T, Pensl G, Nordell N, Schoner A 1997 Phys. Rev. B 55 13618 Google Scholar
[20]	Maier K, Muller H D, Schneider J 1992 Mater. Sci. Forum. 83–87 1183 Google Scholar

施引文献

图 1 (a) 4H-SiC CVD外延设备示意图; Ti掺杂(b)单稀释和(c)双稀释管路示意图

Fig. 1. Schematics of (a) the CVD reactor for 4H-SiC epitaxial growth, (b) single-dilution pipe and (c) double-dilution pipe of TiCl₄ gas delivery.

下载: 全尺寸图片幻灯片

图 2 (a) 含Ti, N共掺杂缓冲层结构的SiC PiN二极管结构示意图; (b) TRIM模拟的Al注入浓度箱型分布

Fig. 2. (a) Schematic of the cross-sectional structure of a 4H-SiC PiN diode with Ti and N co-doped buffer layer; (b) box-profile of Al concentration by TRIM simulation.

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图 3 Ti掺杂浓度随TiCl₄摩尔流量的变化

Fig. 3. Relationship between Ti doping concentration and TiCl₄ mole flow rate.

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图 4 Ti, N共掺杂4H-SiC缓冲层表面形貌(N_d = 1.01 × 10¹⁹ cm^–3)　(a) Ti掺杂浓度为3.70 × 10¹⁵ cm^–3; (b) Ti掺杂浓度为3.71 × 10¹⁶ cm^–3

Fig. 4. Optical microscope images of the Ti and N co-doped 4H-SiC buffer layer surface with Ti doping concentrations of (a) 3.70 × 10¹⁵ cm^–3 and (b) 3.71 × 10¹⁶ cm^–3. Both with N_d = 1.01 × 10¹⁹ cm^–3.

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图 5 无缓冲层、仅含高浓度N掺杂缓冲层、含Ti和N共掺杂缓冲层的4H-SiC PiN二极管的正向特性　(a), (c), (e)在100 A/cm²电流密度下10 min, 正向压降随时间的变化; (b), (d), (f)正向偏置前后正向电流-电压曲线的对比

Fig. 5. (a), (c), (e) Change of forward voltage drop vs. time and (b), (d), (f) comparison between the forward I-V characteristics before and after being biased for 10 min at a current density of 100 A/cm² for 4H-SiC PiN diodes without a buffer layer, with a highly N-doped buffer layer, and with a Ti and N co-doped buffer layer.

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表 1 Ti掺杂实验参数

Table 1. Experimental parameters of Ti doping.

稀释管路	MFC1	MFC2	MFC3	TiCl₄掺杂摩尔流量
稀释管路	/sccm	/slm	/sccm	/(mol·min^–1)
单稀释	1.25	9.800	—	7.25 × 10^–7
	5	9.800	—	2.90 × 10^–6
	50	9.800	—	2.90 × 10^–5
双稀释	50	0.100	5	8.95 × 10^–7
	50	0.075	5	1.14 × 10^–6
	50	0.040	5	1.62 × 10^–6

下载: 导出CSV

[1]	Lendenmann H, Dahlquist F, Johansson N, Soderholm R, Nilsson P A, Bergman J P, Skytt P 2001 Mater. Sci. Forum. 353–356 727 Google Scholar
[2]	Skowronski M, Liu J Q, Vetter W M, Dudley M, Hallin C, Lendenmann H 2002 J. Appl. Phys. 92 4699 Google Scholar
[3]	Caldwell J D, Stahlbush R E, Ancona M G, Glembocki O J, Hobart K D 2010 J. Appl. Phys. 108 044503 Google Scholar
[4]	Maeda K, Hirano R, Sato Y, Tajima M 2012 Mater. Sci. Forum. 725 35 Google Scholar
[5]	Ha S, Mieszkowski P, Skowronski M, Rowland L B 2002 J. Cryst. Growth 244 257 Google Scholar
[6]	Tsuchida H, Kamata I, Miyazawa T, Ito M, Zhang X, Nagano M 2018 Mater. Sci. Semicond. Process. 78 2 Google Scholar
[7]	Tanaka A, Matsuhata H, Kawabata N, Mori D, Inoue K, Ryo M, Fujimoto T, Tawara T, Miyazato M, Miyajima M, Fukuda K, Ohtsuki A, Tomohisa T, Tsuchida H, Yonezawa Y, Kimoto T 2016 J. Appl. Phys. 119 095711 Google Scholar
[8]	Sumakeris J J, Bergman P, Das M K, Hallin C, Hull B A, Janzen E, Lendenmann H, O’Loughlin M J, Paisley M J, Ha S Y, Skowronski M, Palmour J W, Carter Jr C H 2006 Mater. Sci. Forum. 527-529 141 Google Scholar
[9]	Hori T, Danno K, Kimoto T 2007 J. Cryst. Growth. 306 297 Google Scholar
[10]	Stahlbush R E, VanMil B L, Myers Ward R L, Lew K K, Gaskill D K, Eddy Jr C R 2009 Appl. Phys. Lett. 94 041916 Google Scholar
[11]	Mahadik N A, Stahlbush R E, Ancona M G, Lmhoff E A, Hobart K D, Myers-Ward R L, Eddy Jr C R, Gaskill D K, Kub F J 2012 Appl. Phys. Lett. 100 042102 Google Scholar
[12]	Tawara T, Miyazawa T, Ryo M, Miyazato M, Fujimoto T, Takenaka K, Matsunaga S, Miyajima M, Otsuki A, Yonezawa Y, Kato T, Okumura H, Kimoto T, Tsuchida H 2016 J. Appl. Phys. 120 115101 Google Scholar
[13]	Miyazawa T, Tawara T, Tsuchida H 2017 Mater. Sci. Forum. 897 67 Google Scholar
[14]	Miyazawa T, Tawara T, Takanashi R, Tsuchida H 2016 Appl. Phys. Express 9 111301 Google Scholar
[15]	Murata K, Tawara T, Yang A, Takanashi R, Miyazawa T, Tsuchida H 2019 J. Appl. Phys. 126 045711 Google Scholar
[16]	Tawara T, Miyazawa T, Ryo M, Miyazato M, Fujimoto T, Takenaka K, Matsunaga S, Miyajima M, Otsuki A, Yonezawa Y, Kato T, Okumura H, Kimoto T, Tsuchida H 2017 Mater. Sci. Forum. 897 419 Google Scholar
[17]	Dalibor T, Pensl G, Matsunami H, Kimoto T, Choyke W J, Schoner A, Nordell N 1997 Phys. Status Solidi A 162 199 Google Scholar
[18]	Hobgood H M, Glass R C, Augustine G, Hopkins R H, Jenny J, Skowronski M, Mitchel W C, Roth M 1995 Appl. Phys. Lett. 66 1364 Google Scholar
[19]	Dalibor T, Pensl G, Nordell N, Schoner A 1997 Phys. Rev. B 55 13618 Google Scholar
[20]	Maier K, Muller H D, Schneider J 1992 Mater. Sci. Forum. 83–87 1183 Google Scholar

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