-
测量了晶格匹配InAlN/GaN异质结肖特基接触的反向变温电流-电压特性曲线, 研究了反向漏电流的偏压与温度依赖关系. 结果表明: 1)电流是电压和温度的强函数, 饱和电流远大于理论值, 无法采用经典热发射模型解释; 2)在低偏压区, 数据满足
$\ln(I/E)\text{-}E^{1/2}$ 线性依赖关系, 电流斜率和激活能与Frenkel-Poole模型的理论值接近, 表明电流应该为FP机制占主导; 3)在高偏压区, 数据满足$ \ln(I/E^2)\text{-}E^{-1} $ 线性依赖关系, 电流斜率不随温度改变, 表明Fowler-Nordheim隧穿机制占主导; 4)反向电流势垒高度约为0.60 eV, 远低于热发射势垒高度2.91 eV, 表明可导位错应是反向漏电流的主要输运通道, 局域势垒由于潜能级施主态电离而被极大降低.In this paper, the temperature-dependent current-voltage (T-I-V) characteristics of lattice-matched InAlN/GaN heterostructure Schottky contact in a reverse direction are measured, and the voltage dependence and temperature dependence of the leakage current are studied. The obtained results are as follows.1) The reverse current is a strong function of voltage and temperature, and the saturation current is much larger than the theoretical value, which cannot be explained by the classical thermionic emission (TE) model. 2) In the low-bias region, the$ \ln(I/E)\text{-}E^{1/2} $ data points obey a good linear relationship, whose current slope and corresponding activation energy are close to the values predicted by the Frenkel-Poole (FP) model, indicating the dominant role of the FP emission mechanism. 3) In the high-bias region, the$ \ln(I/E^2)\text{-}E^{-1} $ data points also follow a linear dependence, but the current slope is a weak function of temperature, indicating that the Fowler-Nordheim tunneling mechanism should be mainly responsible for the leakage current. 4) The current barrier height is extracted to be about 0.60 eV, which is much lower than the value of 2.91 eV obtained from the TE model, confirming the primary leakage path of the conductive dislocations, where the localized barrier is significantly reduced due to the ionization of shallow donor-like traps.-
Keywords:
- reverse leakage current /
- bias and temperature /
- conductive dislocations /
- shallow donor state
[1] Gadanecz A, Bläsing J, Dadgar A, Hums C, Krost A 2007 Appl. Phys. Lett. 90 084505
[2] Kuzmik J, Kostopoulos A, Konstantinidis G, et al. 2006 IEEE Trans. Electron Devices 53 422
Google Scholar
[3] Filippov I A, Shakhnov V A, Velikovskii L E, Brudnyi P A, Demchenko O I 2020 Russ. Phys. J. 63 94
Google Scholar
[4] Hums C, Bläsing J, Dadgar A, et al. 2007 Appl. Phys. Lett. 90 022105
Google Scholar
[5] Jeganathan K, Shimizu M 2014 AIP Adv. 4 097113
Google Scholar
[6] Wang R H, Saunier P, Tang Y, et al. 2011 IEEE Electron. Device Lett. 32 309
Google Scholar
[7] Hsu J W P, Manfra M J, Lang D V, et al. 2001 Appl. Phys. Lett. 78 1685
Google Scholar
[8] Kaun S W, Wong M H, Dasgupta S, Choi S, Chung R, Umesh K M, James S S 2011 Appl. Phys. Express 4 417
Google Scholar
[9] Zhang H, Miller E J, Yu E T 2006 J. Appl. Phys. 99 247
[10] Miller E J, Schaadt D M, Yu E T, Poblenz C, Elsass C, Speck J S 2002 J. Appl. Phys. 91 9821
Google Scholar
[11] Xu J X, Wang R, Zhang L, Zhang S Y, Zheng P H, Zhang Y, Song Y, Tong X D 2020 Appl. Phys. Lett. 117 023501
Google Scholar
[12] Miller E J, Yu E T, Waltereit P, Speck J S 2004 Appl. Phys. Lett. 84 535
Google Scholar
[13] Arslan E, Bütün S, Ozbay E 2009 Appl. Phys. Lett. 94 142106
Google Scholar
[14] Chen L L, Schrimpf R D, Fleetwood D M, et al. 2020 IEEE Trans. Electron Devices 67 841
Google Scholar
[15] Zhou Y, Xu Z, Li J T 2019 Appl. Phys. A 125 881
Google Scholar
[16] Kuzmik J 2001 IEEE Electron. Device Lett. 22 510
Google Scholar
[17] Ren J, Yan D, Yang G, Wang F X, Xiao S Q, Gu X F 2015 J. Appl. Phys. 117 123502
Google Scholar
[18] Yan D W, Lu H, Cao D S, Chen D J, Zhang R, Zheng Y D 2010 Appl. Phys. Lett. 97 023703
Google Scholar
[19] Arslan E, Altındal Ş, Özçelik S, Ozbay E 2009 J. Appl. Phys. 105 23705
Google Scholar
[20] 王翔, 陈雷雷, 曹艳荣, 羊群思, 朱培敏, 杨国锋, 王福学, 闫大为, 顾晓峰 2018 物理学报 67 177202
Google Scholar
Wang X, Chen L L, Cao Y R, Yang Q S, Zhu P M, Yang G F, Wang F X, Yan D W, Gu X F 2018 Acta Phys. Sin. 67 177202
Google Scholar
[21] Saadaoui S, Fathallah O, Maaref H 2020 Mater. Sci. Semicond. Process. 115 105100
Google Scholar
-
图 1 (a) InAlN/GaN肖特基势垒二极管横截面结构示意图; (b)俯视图
Fig. 1. (a) Schematic cross-section diagram of InAlN / GaN Schottky barrier diodes; (b) top view image of the devices.
图 2 (a) 不同温度下InAlN/GaN肖特基势垒二极管的I-V特性和常温下典型的C-V特性曲线; (b)电场与电压的函数关系图和n2 DEG对电压的依赖关系
Fig. 2. (a) The reverse I-V characteristics of InAlN / GaN Schottky diode measured at various temperatures and typical C-V curve at room temperature; (b)electric field and n2 DEG as a function of gate voltage.
图 3 不同温度下InAlN/GaN肖特基势垒二极管的反向饱和电流的理论值和实验值
Fig. 3. Theoretical and experimental reverse saturation current of InAlN/GaN Schottky diodes for different temperatures.
图 4 (a)不同温度下lnI和E1/2关系图; (b)电流斜率βSC
Fig. 4. (a) The relationship between lnI and E1/2 at different temperatures; (b) the corresponding current slope βSC.
图 5 (a)在不同温度下ln(I/E)和E1/2的关系; (b)相应的斜率βFP
Fig. 5. (a) The relationship between ln(I/E) and E1/2 at different temperatures; (b) the corresponding current slope βFP.
图 6 (a) GaN中可导位错模型示意图; (b) FP 发射电流输运过程示意图
Fig. 6. (a) Schematic band diagram of the conductive dislocations in GaN; (b) schematic transport process of the FP emission current
图 8 (a)在不同温度下的C-V曲线; (b)不同夹断电压所对应的电场关系
Fig. 8. (a) The C-V curves measured at different tempratures; (b) the corresponding electric field with different pinch-off voltages.
图 9 (a)不同温度下ln(I/E2)和E–1关系图; (b) FN隧穿有效势垒高度随温度的变化
Fig. 9. (a) The relationship between ln(I/E2) and E–1 at different temperatures; (b) the effective barrier height extracted based on FN tunneling model.
-
[1] Gadanecz A, Bläsing J, Dadgar A, Hums C, Krost A 2007 Appl. Phys. Lett. 90 084505
[2] Kuzmik J, Kostopoulos A, Konstantinidis G, et al. 2006 IEEE Trans. Electron Devices 53 422
Google Scholar
[3] Filippov I A, Shakhnov V A, Velikovskii L E, Brudnyi P A, Demchenko O I 2020 Russ. Phys. J. 63 94
Google Scholar
[4] Hums C, Bläsing J, Dadgar A, et al. 2007 Appl. Phys. Lett. 90 022105
Google Scholar
[5] Jeganathan K, Shimizu M 2014 AIP Adv. 4 097113
Google Scholar
[6] Wang R H, Saunier P, Tang Y, et al. 2011 IEEE Electron. Device Lett. 32 309
Google Scholar
[7] Hsu J W P, Manfra M J, Lang D V, et al. 2001 Appl. Phys. Lett. 78 1685
Google Scholar
[8] Kaun S W, Wong M H, Dasgupta S, Choi S, Chung R, Umesh K M, James S S 2011 Appl. Phys. Express 4 417
Google Scholar
[9] Zhang H, Miller E J, Yu E T 2006 J. Appl. Phys. 99 247
[10] Miller E J, Schaadt D M, Yu E T, Poblenz C, Elsass C, Speck J S 2002 J. Appl. Phys. 91 9821
Google Scholar
[11] Xu J X, Wang R, Zhang L, Zhang S Y, Zheng P H, Zhang Y, Song Y, Tong X D 2020 Appl. Phys. Lett. 117 023501
Google Scholar
[12] Miller E J, Yu E T, Waltereit P, Speck J S 2004 Appl. Phys. Lett. 84 535
Google Scholar
[13] Arslan E, Bütün S, Ozbay E 2009 Appl. Phys. Lett. 94 142106
Google Scholar
[14] Chen L L, Schrimpf R D, Fleetwood D M, et al. 2020 IEEE Trans. Electron Devices 67 841
Google Scholar
[15] Zhou Y, Xu Z, Li J T 2019 Appl. Phys. A 125 881
Google Scholar
[16] Kuzmik J 2001 IEEE Electron. Device Lett. 22 510
Google Scholar
[17] Ren J, Yan D, Yang G, Wang F X, Xiao S Q, Gu X F 2015 J. Appl. Phys. 117 123502
Google Scholar
[18] Yan D W, Lu H, Cao D S, Chen D J, Zhang R, Zheng Y D 2010 Appl. Phys. Lett. 97 023703
Google Scholar
[19] Arslan E, Altındal Ş, Özçelik S, Ozbay E 2009 J. Appl. Phys. 105 23705
Google Scholar
[20] 王翔, 陈雷雷, 曹艳荣, 羊群思, 朱培敏, 杨国锋, 王福学, 闫大为, 顾晓峰 2018 物理学报 67 177202
Google Scholar
Wang X, Chen L L, Cao Y R, Yang Q S, Zhu P M, Yang G F, Wang F X, Yan D W, Gu X F 2018 Acta Phys. Sin. 67 177202
Google Scholar
[21] Saadaoui S, Fathallah O, Maaref H 2020 Mater. Sci. Semicond. Process. 115 105100
Google Scholar
-
[1] 武鹏, 张涛, 张进成, 郝跃. 低反向漏电自支撑衬底AlGaN/GaN肖特基二极管. 物理学报, 2022, 71(15): 158503. doi: 10.7498/aps.71.20220161 [2] 王胜, 陈晶晶, 翁盛槟. 纳米孪晶界对可动位错演化特性与金属Al强化机理探究. 物理学报, 2022, 71(2): 029601. doi: 10.7498/aps.71.20211305 [3] 王瑾, 贺新福, 曹晗, 贾丽霞, 豆艳坤, 杨文. 不同温度下bcc-Fe中螺位错滑移及其与½[ ${{11}}\bar {{1}}$ ]位错环相互作用行为. 物理学报, 2021, 70(6): 068701. doi: 10.7498/aps.70.20201659[4] 陈晶晶. 纳米孪晶界对可动位错演化特性与金属Al强化机理探究. 物理学报, 2021, (): . doi: 10.7498/aps.70.20211305 [5] 白旭芳, 陈磊, 额尔敦朝鲁. 电磁场中施主中心量子点内磁极化子态寿命与qubit退相干. 物理学报, 2020, 69(14): 147802. doi: 10.7498/aps.69.20200242 [6] 祁科武, 赵宇宏, 郭慧俊, 田晓林, 侯华. 温度对小角度对称倾斜晶界位错运动影响的晶体相场模拟. 物理学报, 2019, 68(17): 170504. doi: 10.7498/aps.68.20190051 [7] 王翔, 陈雷雷, 曹艳荣, 羊群思, 朱培敏, 杨国锋, 王福学, 闫大为, 顾晓峰. Ni/Au/n-GaN肖特基二极管可导位错的电学模型. 物理学报, 2018, 67(17): 177202. doi: 10.7498/aps.67.20180762 [8] 周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 吕懿, 王斌, 李妤晨. 应变Si NMOSFET漏电流解析模型. 物理学报, 2013, 62(23): 237103. doi: 10.7498/aps.62.237103 [9] 陈海峰. 反向衬底偏压下纳米N沟道金属氧化物半导体场效应晶体管中栅调制界面产生电流特性研究. 物理学报, 2013, 62(18): 188503. doi: 10.7498/aps.62.188503 [10] 高国荣, 刘艳萍, 潘琼. 基于小波域可导阈值函数与自适应阈值的脉冲星信号消噪. 物理学报, 2012, 61(13): 139701. doi: 10.7498/aps.61.139701 [11] 高原, 柳占立, 赵雪川, 张朝晖, 庄茁, 由小川. 基于点缺陷扩散理论与离散位错动力学耦合的位错攀移模型研究. 物理学报, 2011, 60(9): 096103. doi: 10.7498/aps.60.096103 [12] 屈光辉, 施 卫. 光导开关中的感生电流与传导电流. 物理学报, 2006, 55(11): 6068-6072. doi: 10.7498/aps.55.6068 [13] 王洪梅, 张亚非. Airy传递矩阵法与偏压下多势垒结构的准束缚能级. 物理学报, 2005, 54(5): 2226-2232. doi: 10.7498/aps.54.2226 [14] 陈张海, 陈忠辉, 刘普霖, 石晓红, 史国良, 沈学础. GaAs中与施主高激发态有关的共振极化子效应. 物理学报, 1997, 46(3): 556-562. doi: 10.7498/aps.46.556 [15] 陈曦, 朱嘉麟. 量子点中浅施主的能谱结构. 物理学报, 1994, 43(6): 1008-1016. doi: 10.7498/aps.43.1008 [16] 王德宁, 沈彭年, 王渭源. 深能级陷阱对FET的光瞬态特性、等效噪声电流和漏电流升高的影响. 物理学报, 1987, 36(10): 1264-1272. doi: 10.7498/aps.36.1264 [17] 郭可信, 林保军. 镍铬合金中的位错运动与位错反应. 物理学报, 1978, 27(6): 729-745. doi: 10.7498/aps.27.729 [18] 郭可信, 张修睦. 铝镁合金中位错的运动与交滑移. 物理学报, 1966, 22(3): 257-269. doi: 10.7498/aps.22.257 [19] 张修睦, 林保军, 郭可信. 铝镁合金中位错网络与位错子反应的电显微镜透射观察. 物理学报, 1965, 21(2): 476-480. doi: 10.7498/aps.21.476 [20] 洪晶, 王贵华, 刘振茂, 叶以正. 硅中位错与蚀斑的对应关系. 物理学报, 1964, 20(12): 1254-1267. doi: 10.7498/aps.20.1254
下载:
计量
- 文章访问数: 5400
- PDF下载量: 86
- 被引次数: 0
