面向单晶SiC原子级表面制造的等离子体辅助抛光技术

吉建伟; 山村和也; 邓辉

doi:10.7498/aps.70.20202014

摘要

目前Si基半导体由于其自身材料特性的限制, 已经越来越难以满足高速发展的现代电力电子技术对半导体器件的性能要求. SiC作为新一代半导体材料具有显著的性能优势, 但由于其属于典型的难加工材料, 实现SiC晶圆的高质量与高效率加工成为了推动其产业化应用进程的关键. 本综述在回顾近年来SiC超精密加工技术研究进展的基础上, 重点介绍了一种基于等离子体氧化改性的SiC高效超精密抛光技术, 分析了该技术的材料去除机理、典型装置、改性过程及抛光效果. 分析结果表明, 该技术具有较高的去除效率, 能够获得原子级平坦表面, 并且不会产生亚表面损伤. 同时针对表面改性辅助抛光技术加工SiC表面过程中出现的台阶现象, 探讨了该台阶结构的产生机理及调控策略. 最后对等离子体辅助抛光技术的发展与挑战进行了展望.

关键词:

Abstract

At present, owing to the inherent limitations of the material characteristics of Si based semiconductor materials, Si based semiconductors are facing more and more challenges in meeting the performance requirements of the rapidly developing modern power electronic technologies used in semiconductor devices. As a new generation of semiconductor material, SiC has significant performance advantages, but it is difficult to process the SiC wafers with high-quality and high-efficiency in their industrial application. Reviewing the research progress of ultra-precision machining technology of SiC in recent years, we introduce plasma oxidation modification based highly efficient polishing technology of SiC in this paper. The material removal mechanism, typical device, modification process, and polishing result of this technology are analyzed. The analysis shows that the plasma oxidation modification possesses high removal efficiency and atomically flat surfaces without surface or subsurface damages. Furthermore, aiming at step-terrace structures produced during SiC surface processing with different polishing technologies, the generation mechanism and control strategy of periodic atomic layer step-terrace structures are discussed. Finally, the development and challenge of plasma-assisted polishing technology are prospected.

Keywords:

single crystal SiC /
atomic and close-to-atomic scale manufacturing /
plasma /
surface modification

作者及机构信息

1.
南方科技大学前沿与交叉科学研究院, 深圳　518055

2.
南方科技大学机械与能源工程系, 深圳　518055

3.
日本大阪大学工学院精密科学与技术系, 大阪　5650871

通信作者: 邓辉, dengh@sustech.edu.cn

基金项目: 国家自然科学基金(批准号: 52035009, 52005243)和深圳市科技创新委员会国际合作项目(批准号: GJHZ20180928155412525)资助的课题

Authors and contacts

1.
Institute of Frontier and Interdisciplinary Sciences, Southern University of Science and Technology, Shenzhen 518055, China

2.
Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen 518055, China

3.
Department of Precision Science and Technology, Osaka University, Osaka 5650871, Japan

Corresponding author: Deng Hui, dengh@sustech.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 52035009, 52005243) and the International Cooperation from the Science and Technology Innovation Committee of Shenzhen Municipality, Shenzhen, China (Grant No. GJHZ20180928155412525)

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施引文献

图 1 PAP技术原理图^[45]

Fig. 1. Schematic diagram of PAP^[45].

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图 2 PAP加工装置　(a)装置示意图^[40]; (b)装置实物图^[45]; (c)抛光垫截面图及SEM图^[45]

Fig. 2. PAP machine: (a) The schematic view^[40]; (b) photograph of the apparatus^[45]; (c) cross-sectional structure and SEM image of the polishing film^[45].

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图 3 等离子体OES谱^[45]　(a)反应气体为水蒸气; (b)反应气体为O₂

Fig. 3. OES spectra^[45] of plasma: (a) Water vapor contained plasma; (b) oxygen contained plasma.

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图 4 球盘式摩擦磨损实验^[45]　(a)实验装置示意图; (b)实验结果

Fig. 4. Ball-on-disc wear test^[45]: (a) Schematic view of the experimental apparatus; (b) the experimental results.

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图 5 以水蒸气为反应气体的等离子体改性后表面XTEM图^[48]

Fig. 5. XTEM image of surface irradiated by water vapor contained plasma^[48].

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图 6 改性前后4H-SiC(0001)纳米压痕实验^[49]　(a)载荷位移曲线; (b)计算获得的硬度值

Fig. 6. Nano-indentation tests of 4H-SiC(0001) before and after surface modification^[49]: (a) Load-displacement curve; (b) hardness calculated from measured data.

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图 7 CMP加工SiC的AFM图(PV表示最高和最低处的差值; RMS是均方根)^[45]　(a) 金刚石抛光液(PV, 2.46 nm; RMS, 0.30 nm); (b) Al₂O₃抛光液(PV, 30.63 nm; RMS, 1.28 nm); (c) SiO₂抛光液(PV, 2.01 nm; RMS, 0.15 nm); (d) CeO₂抛光液(PV, 0.68 nm; RMS, 0.08 nm)

Fig. 7. AFM images of CMP-processed SiC (PV, peak to valley; RMS, root mean square)^[45]: (a) Diamond slurry (PV, 2.46 nm; RMS, 0.30 nm); (b) Al₂O₃ slurry (PV, 30.63 nm; RMS, 1.28 nm); (c) SiO₂ slurry (PV, 2.01 nm; RMS, 0.15 nm); (d) CeO₂ slurry (PV, 0.68 nm; RMS, 0.08 nm).

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图 8 加工后4H-SiC的WLI测量结果^[40]　(a)不使用等离子体改性, 而仅以CeO₂抛光后表面(PV, 5.49 nm; RMS, 0.57 nm); (b) PAP技术加工后表面(PV, 1.89 nm; RMS, 0.28 nm)

Fig. 8. WLI images of processed 4H-SiC wafer^[40]: (a) The surface polished by ceria abrasive without plasma irradiation (PV, 5.49 nm; RMS, 0.57 nm); (b) the surface processed by PAP (PV, 1.89 nm; RMS, 0.28 nm).

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图 9 不同加工阶段的SiC样品AFM图^[45]　(a)加工前SiC表面; (b) PAP技术加工过程中SiC表面; (c) PAP技术最终加工结果

Fig. 9. AFM images of the surface of SiC substrate during different polishing stages^[45]: (a) The unprocessed SiC surface; (b) SiC surface at the in-process stage of PAP; (c) SiC surface at the final stage of PAP.

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图 10 PAP技术加工后4H-SiC样品XTEM图^[49]　(a) 低分辨率图像; (b) 高分辨率图像

Fig. 10. (a) Low and (b) high resolution XTEM image of 4H-SiC surface processed by PAP^[49].

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图 11 RHEED测量结果^[40]　(a) PAP加工后样品的RHEED图; (b)加工前后两样品的晶格常数

Fig. 11. Measurement results of RHEED^[40]: (a) RHEED pattern of the SiC wafer processed by PAP; (b) lattice constants calculated from the RHEED pattern.

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图 12 多次进行等离子体辐照和HF浸泡后的4H-SiC表面WLI图^[48]　(a)金刚石磨料抛光获得的初始表面(PV, 11.14 nm; RMS, 1.80 nm); (b)第一次处理后的结果(PV, 6.65 nm; RMS, 1.02 nm); (c)第二次处理后的结果(PV, 8.39 nm; RMS, 2.83 nm); (d)第三次处理后的结果(PV, 2.45 nm; RMS, 0.45 nm)

Fig. 12. WLI images of processed 4H-SiC surfaces^[48]: (a) Diamond lapped surface (PV, 11.14 nm; RMS, 1.80 nm); (b) after the first cycle of plasma oxidation and HF dipping (PV, 6.65 nm; RMS, 1.02 nm); (c) after the second cycle (PV, 8.39 nm; RMS, 2.83 nm); (d) after the third cycle (PV, 2.45 nm; RMS, 0.45 nm).

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图 13 等离子体辐照和HF刻蚀处理之后的SiC表面AFM图^[48] (PV, 0.95 nm; RMS, 0.11 nm)

Fig. 13. AFM image of the SiC sueface processed by plasma oxidation followed by HF dipping^[48] (PV, 0.95 nm; RMS, 0.11 nm).

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图 14 等离子体辐照后4H-SiC样品表面的XTEM图^[45]

Fig. 14. XTEM images of water vapor contained plasma irradiated 4H-SiC surface^[45].

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图 15 4H-SiC(0001)表面台阶结构的键结构(观察方向[1120])^[64]

Fig. 15. Bond configuration of step-terrace structure on a 4H-SiC(0001) surface viewed from the [1120] direction^[64].

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图 16 4H-SiC台阶状结构形成机制^[65]　(a)化学改性占主导机制, 产生a-b-a*-b*型结构; (b)化学改性作用与磨粒物理去除作用相当, 产生a-b型结构; (c)磨粒物理去除作用占主导机制, 形成a-a型结构

Fig. 16. Probable formation mechanism of step-terrace structure of 4H-SiC^[65]: (a) Surface modification was dominant, resulting in the formation of the a-b-a*-b* type step-terrace structure; (b) physical removal was comparable with surface modification, resulting in the formation of the a-b type step-terrace structure; (c) physical removal was dominant, resulting in the formation of the a-a type step-terrace structure.

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图 17 在抛光盘转速不同情况下, 抛光后的SiC表面的不同台阶状结构的AFM图^[65]　(a) 500 r/min; (b) 1500 r/min; (c) 2500 r/min

Fig. 17. AFM images of different step structures on SiC surface after polishing with different polishing speed of (a) 500, (b) 1500, (c) 2500 r/min.

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[1]	Bencherif H, Pezzimenti F, Dehimi L, Della C 2020 Appl. Phys. A 126 854 Google Scholar
[2]	Haddud A, Desouza A, Khare A, Lee H 2017 J. Manuf. Technol. Mana. 28 1055 Google Scholar
[3]	He Y, Clark G, Schaibley J, He Y, Chen M, Wei Y, Ding X, Zhang Q, Yao W, Xu X, Lu C, Pan J 2015 Nat. Nanotechnol. 10 497 Google Scholar
[4]	Mohammed M 2020 Plasmonics 15 1989 Google Scholar
[5]	Kim S, Ahn H, Lim J, Lee K 2019 J. Korean Phys. Soc. 74 196 Google Scholar
[6]	Kimura M, Koga Y, Nakanishi H, Matsuda T, Kameda T, Nakashima Y 2017 IEEE J. Electron Devi. 6 100 Google Scholar
[7]	Zhang Q, Cheng L, Boutaba R 2010 J. Internet. Serv. Appl. 1 7 Google Scholar
[8]	Umezawa H, Nagase M, Kato Y, Shikata S 2012 Diam. Relat. Mater. 24 201 Google Scholar
[9]	Sharofidinov S, Kukushkin S, Redkov A, Grashchenko A, Osipov A 2019 Tech. Phys. Lett. 45 711 Google Scholar
[10]	Domnich V, Aratyn Y, Kriven W, Gogotsi Y 2008 Rev. Adv. Mater. Sci. 17 33
[11]	Qian J, Voronin G, Zerda T, He D, Zhao Y 2002 J. Mater. Res. 17 2153 Google Scholar
[12]	Casady J, Johnson R 1996 Solid State Electron. 39 1409 Google Scholar
[13]	Luo Q, Lu J, Xu X 2016 Wear 350/351 99 Google Scholar
[14]	Li N, Ding J, Xuan Z, Huang J, Lin Z 2018 Strength Mater. 50 419 Google Scholar
[15]	Dai S, Lei H, Fu J 2020 J. Electron. Mater. 49 1301 Google Scholar
[16]	Heydemann V, Everson W, Gamble R, Snyder D, Skowronski M 2004 Mater. Sci. Forum 457/460 805 Google Scholar
[17]	Zhou L, Audurier V, Pirouz P, Powell J 1997 J. Electrochem. Soc. 144 161 Google Scholar
[18]	Pan G, Zhou Y, Luo G, Shi X, Zou C, Gong H 2013 J. Mater. Sci. Mater. Electron. 24 5040 Google Scholar
[19]	Kato T, Wada K, Hozomi E, Taniguchi H, Miura T, Nishizawa S, Arai K 2007 Mater. Sci. Forum 556/557 753 Google Scholar
[20]	Neslen C, Mitchel W, Hengehold R 2001 J. Electron. Mater. 30 1271 Google Scholar
[21]	Lee H, Kim M, Jeong H 2015 Int. J. Precis. Eng. Manuf. 16 2611 Google Scholar
[22]	Lee H, Kim D, An J, Lee H, Kim K, Jeong H 2010 CIRP Ann. Manuf. Techn. 59 333
[23]	Kurokawa S, Doi T, Wang C, Sano Y, Aida H, Oyama K, Takahashi K 2014 ECS Trans. 60 641 Google Scholar
[24]	Zhou Y, Pan G S, Shi X L, Gong H, Luo G H, Gu Z H 2014 Surf. Coat. Tech. 251 48 Google Scholar
[25]	Shi X L, Pan G S, Zhou Y, Gu Z H, Gong H, Zou C L 2014 Appl. Surf. Sci. 307 414 Google Scholar
[26]	Liang H, Yan Q, Lu J, Luo B, Xiao X 2019 Int. J. Adv. Manuf. Tech. 103 1337 Google Scholar
[27]	Zhai W J, Gao B, Chang J, Wang H 2019 Nanomanuf. Metrol. 2 36 Google Scholar
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